专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06196019B1 Accumulator 失效
标题翻译：累加器
公开(公告)号：US06196019B1
公开(公告)日：2001-03-06
申请号：US09347643
申请日：1999-07-06
申请人： Yutaka Higo , Keiji Yamazaki , Takayuki Fujii
发明人： Yutaka Higo , Keiji Yamazaki , Takayuki Fujii
IPC分类号： F25B4300
CPC分类号： F25B43/006 , B60H1/3229 , F25B43/003 , F25B2400/03
摘要： An accumulator includes a tank, a refrigerant inlet port provided at an upper portion of the tank, a refrigerant outlet port provided at the upper portion of the tank, a dryer unit disposed in the tank at an intermediate portion along a direction of height of the tank, and a separating wall extending upwardly from the dryer unit and dividing an upper inner space of the tank above the dryer unit into an inlet side upper space located at the refrigerant inlet part side and an outlet side upper space located at the refrigerant outlet side port. The separating wall has a plurality of apertures formed in a scattered state for communicating the inlet side upper space and the outlet side upper space each other. The accumulator includes an oil returning tube having a lower inlet opening and an upper outlet opening. The oil returning tube is disposed in the tank such that the lower inlet opening and the upper outlet opening are located at a bottom portion of the tank and at the refrigerant outlet port, respectively.
摘要翻译：蓄能器包括一个储罐，一个设在罐的上部的制冷剂入口，一个设在罐上部的制冷剂出口，一个干燥单元，设置在罐的沿着高度方向的中间部分罐和分隔壁，其从干燥器单元向上延伸并将干燥器单元上方的罐的上部内部空间分成位于制冷剂入口部侧的入口侧上部空间和位于制冷剂出口侧的出口侧上部空间港口。分隔壁具有以分散状态形成的多个孔，用于使入口侧上部空间和出口侧上部空间相互连通。蓄能器包括具有下入口和上出口的回油管。回油管设置在罐中，使得下入口和上出口开口分别位于罐的底部和制冷剂出口处。

2. 发明授权

US08867266B2 Method for driving storage element and storage device 有权
标题翻译：驱动存储元件和存储装置的方法
公开(公告)号：US08867266B2
公开(公告)日：2014-10-21
申请号：US13104693
申请日：2011-05-10
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675
摘要： Disclosed herein is a method for driving a storage element that has a plurality of magnetic layers and performs recording by utilizing spin torque magnetization reversal, the method including applying a pulse voltage having reverse polarity of polarity of a recording pulse voltage in application of the recording pulse voltage to the storage element.
摘要翻译：本发明公开了一种驱动具有多个磁性层并通过利用自旋转矩磁化反转进行记录的存储元件的方法，该方法包括在施加记录脉冲时应用具有与记录脉冲电压极性相反的极性的脉冲电压电压到存储元件。

3. 发明授权

US08854876B2 Perpendicular magnetization storage element and storage device 有权
标题翻译：垂直磁化存储元件和存储装置
公开(公告)号：US08854876B2
公开(公告)日：2014-10-07
申请号：US13462538
申请日：2012-05-02
申请人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
IPC分类号： G11C11/14 , H01L43/08 , H01L27/22 , G11C11/16
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/222 , H01L27/226 , H01L43/08
摘要： A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.
摘要翻译：存储元件包括具有垂直于其膜表面的磁化并且通过磁性物质的磁化状态保持信息的存储层，具有垂直于其膜表面的磁化的磁化固定层，其被用作存储在其中的信息的基础所述存储层，设置在所述存储层和所述磁化被钉扎层之间的非磁性物质的中间层，以及在与所述中间层相对的一侧设置在所述存储层附近并且包括至少两个氧化物层的盖层。存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。

4. 发明授权

US08853806B2 Memory element and memory 有权
标题翻译：内存元素和内存
公开(公告)号：US08853806B2
公开(公告)日：2014-10-07
申请号：US13221261
申请日：2011-08-30
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , H01L43/08
摘要： There is provided a memory element including a magnetic layer that includes at least one kind of element selected from a group consisting of Fe, Co, and Ni, and carbon, has a content of carbon that is equal to or greater than 3 atomic % and less than 70 atomic % with respect to a total content of Fe, Co, and Ni, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and that comes into contact with the magnetic layer.
摘要翻译：提供了包括磁性层的记忆元件，该磁性层包括从由Fe，Co和Ni组成的组中选择的至少一种元素，碳具有等于或大于3原子％的碳含量，以及相对于Fe，Co和Ni的总含量小于70原子％，并且在垂直于膜面的方向上具有磁各向异性; 以及由具有氯化钠结构或尖晶石结构并与磁性层接触的氧化物形成的氧化物层。

5. 发明授权

US08565013B2 Storage element and storage device 失效
标题翻译：存储元件和存储设备
公开(公告)号：US08565013B2
公开(公告)日：2013-10-22
申请号：US13434478
申请日：2012-03-29
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Tetsuya Asayama , Hiroyuki Uchida
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Tetsuya Asayama , Hiroyuki Uchida
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/10
摘要： A storage element includes a storage layer that stores information on the basis of a magnetization state of a magnetic material; a fixed magnetization layer that has a magnetization serving as a reference of the information stored in the storage layer; an interlayer that is formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a cap layer that is provided to be adjacent to the storage layer and opposite to the interlayer; and a metal cap layer that is provided to be adjacent to the cap layer and opposite to the storage layer.
摘要翻译：存储元件包括：存储层，其基于磁性材料的磁化状态存储信息; 具有作为存储在存储层中的信息的参考的磁化的固定磁化层; 由非磁性材料形成并介于所述存储层和所述固定磁化层之间的中间层; 盖层，其设置成与所述存储层相邻并与所述中间层相对; 以及设置成与盖层相邻并与存储层相对的金属盖层。

6. 发明授权

US08497139B2 Magnetic memory device and method of manufacturing the same 失效
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US08497139B2
公开(公告)日：2013-07-30
申请号：US13192995
申请日：2011-07-28
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.
摘要翻译：一种磁存储器件，包括在层表面上具有垂直磁化的存储层，其磁化方向根据信息而改变; 以及对存储层提供的参考层，并且是在层表面上具有垂直磁化的信息的基础，其中存储器件通过在电流流动时产生的自旋转矩反转存储层的磁化来存储信息在由记忆层，非磁化层和参考层制成的层之间，存储层在记忆温度下的矫顽力为室温下的矫顽力的0.7倍以下，导热系数为在层表面方向上形成在存储层的一侧的电极低于其周围的导热率。

7. 发明授权

US08455967B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08455967B2
公开(公告)日：2013-06-04
申请号：US13216474
申请日：2011-08-24
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , H01L43/00 , G11C11/00
CPC分类号： G11C11/16 , G11C11/161
摘要： There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy.
摘要翻译：公开了一种存储元件，其包括层叠结构，该分层结构包括具有垂直于膜面的磁化和其信息方向变化的磁化方向的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层之间的绝缘层。自旋极化的电子沿分层结构的层叠方向注入，由此存储层的磁化方向变化，并且相对于存储层执行信息的记录，有效的抗磁场的大小存储层接收小于存储层的饱和磁化量，并且存储层和磁化固定层具有使界面磁各向异性能量变得大于反磁能的方式的膜厚度。

8. 发明授权

US08331136B2 Recording method of nonvolatile memory and nonvolatile memory 失效
标题翻译：非易失性存储器和非易失性存储器的记录方法
公开(公告)号：US08331136B2
公开(公告)日：2012-12-11
申请号：US12821886
申请日：2010-06-23
申请人： Hiroyuki Ohmori , Tetsuya Yamamoto , Masanori Hosomi , Yutaka Higo , Kazutaka Yamane , Kazuhiro Bessho , Hiroshi Kano , Minoru Ikarashi , Yuki Oishi , Shinichiro Kusunoki
发明人： Hiroyuki Ohmori , Tetsuya Yamamoto , Masanori Hosomi , Yutaka Higo , Kazutaka Yamane , Kazuhiro Bessho , Hiroshi Kano , Minoru Ikarashi , Yuki Oishi , Shinichiro Kusunoki
IPC分类号： G11C11/15
CPC分类号： G11C13/0007 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C13/0069 , G11C2013/0073 , G11C2013/0076 , G11C2013/0078 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/79
摘要： A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.
摘要翻译：一种非易失性存储器的记录方法，包括：电气地执行具有连接到用于信息记录的电源的电阻变化的信息存储装置的信息的记录的记录电路，包括以下步骤：以低电阻状态记录信息在信息存储装置的记录电路的输出阻抗大于信息存储装置的低电阻状态下的电阻值的条件下，记录电路; 并且在信息存储装置的记录电路的输出阻抗小于信息存储装置的高电阻状态下的电阻值的条件下，通过记录电路将信息记录在高电阻状态。

9. 发明申请

US20120287696A1 STORAGE ELEMENT AND STORAGE DEVICE 有权
标题翻译：存储元件和存储设备
公开(公告)号：US20120287696A1
公开(公告)日：2012-11-15
申请号：US13451043
申请日：2012-04-19
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： G11C5/08
CPC分类号： H01F10/3286 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/329 , H01F41/303 , H01F41/325 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information
摘要翻译：存储元件包括具有垂直于层表面的磁化的存储层，并且根据磁性材料的磁化状态存储信息; 具有作为存储层的信息并垂直于层表面的参考的磁化的固定磁化层; 由非磁性材料形成并夹在所述存储层和所述固定磁化层之间的夹层; 与所述中间层相对的与所述存储层相邻的矫顽力增强层，由Cr，Ru，W，Si或Mn形成; 以及由与矫顽力增强层相邻并与存储层相对的氧化物形成的自旋势垒层。使用由包括存储层，中间层和固定磁化层的层结构的层叠方向上的电流引起的自旋转矩磁化反转使存储层磁化反转，由此存储信息

10. 发明申请

US20120063220A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120063220A1
公开(公告)日：2012-03-15
申请号：US13219875
申请日：2011-08-29
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , H01L27/228 , H01L43/08 , H01L43/10
摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.
摘要翻译：公开了一种存储元件，其包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录执行信息的存储层接收的有效反磁场的大小小于存储层的饱和磁化量，并且关于存储层与其接触的绝缘层和另一侧层与绝缘层相对的一侧，至少与记忆层接触的界面由氧化膜形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式