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1. 发明授权

US08945730B2 Storage element and memory device 有权
标题翻译：存储元件和存储器件
公开(公告)号：US08945730B2
公开(公告)日：2015-02-03
申请号：US13310846
申请日：2011-12-05
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： H01L43/10 , H01L27/22 , G01R33/09 , H01L43/08
CPC分类号： H01L27/228 , G01R33/091 , G01R33/093 , G01R33/098 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1129 , Y10T428/1143 , Y10T428/115
摘要： A storage element including: a storage layer; a magnetization fixed layer; and an insulating layer, wherein by injecting spin-polarized electrons in a laminating direction of a layered structure that includes the storage layer, the insulating layer, and the magnetization fixed layer, the orientation of magnetization of the storage layer changes and recording of information is performed on the storage layer, and an Fe film and a film that includes Ni are formed in order from an interface side that is in contact with the insulating layer, and a graded composition distribution of Ni and Fe is formed after heating on at least one of the storage layer and the magnetization fixed layer.
摘要翻译：一种存储元件，包括：存储层; 磁化固定层; 和绝缘层，其中通过在包括存储层，绝缘层和磁化固定层的层状结构的层叠方向上注入自旋极化电子，存储层的磁化方向改变并且信息的记录是在与绝缘层接触的界面侧依次形成Fe膜和包含Ni的膜，并且在至少一个加热后形成Ni和Fe的分级组成分布的存储层和磁化固定层。

2. 发明授权

US08879315B2 Storage element and storage device 有权
标题翻译：存储元件和存储设备
公开(公告)号：US08879315B2
公开(公告)日：2014-11-04
申请号：US13560708
申请日：2012-07-27
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC分类号： G11C11/14 , H01L43/10 , G11C11/16 , H01F10/32 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01F10/3286 , H01F10/329 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/10
摘要： Provided is a storage element including a storage layer that holds information according to a magnetization state of a magnetic body, a magnetization fixing layer that has magnetization serving as a reference of the information stored in the storage layer, and an insulation layer that is formed of a non-magnetic body disposed between the storage layer and the magnetization fixing layer. The information is stored by reversing the magnetization of the storage layer using spin torque magnetization reversal occurring with a current flowing in a lamination direction of a layer configuration of the storage layer, the insulation layer, and the magnetization fixing layer, and a size of the storage layer is less than a size in which a direction of the magnetization is simultaneously changed.
摘要翻译：提供一种存储元件，其包括存储层，其根据磁体的磁化状态保存信息;磁化固定层，其具有作为存储在存储层中的信息的参考的磁化;以及绝缘层，其由设置在所述存储层和所述磁化固定层之间的非磁性体。通过使用在存储层，绝缘层和磁化固定层的层构造的层叠方向上流动的电流发生的自旋转矩磁化反转来反转存储层的磁化来存储信息，以及存储层小于磁化方向同时变化的尺寸。

3. 发明授权

US08611139B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08611139B2
公开(公告)日：2013-12-17
申请号：US13226983
申请日：2011-09-07
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/32 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08
摘要： There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.
摘要翻译：公开了一种包括层叠结构的存储元件，该结构包括具有垂直于膜面的磁化的存储层; 磁化固定层; 以及设置在存储层之间的绝缘层。自旋极化的电子沿着分层结构的层叠方向注入，存储层接收的有效抗磁场的大小相对于存储层的饱和磁化量小于相对于绝缘层的饱和磁化量与存储层接触，并且存储层在与绝缘层相对的一侧接触的另一侧层，至少与存储层接触的界面由氧化物膜形成，并且除了Co-Fe-B磁性层之外，存储层还包括非磁性金属和氧化物中的至少一种。

4. 发明授权

US08598671B2 Storage element, method for manufacturing storage element, and memory 有权
标题翻译：存储元件，存储元件的制造方法和存储器
公开(公告)号：US08598671B2
公开(公告)日：2013-12-03
申请号：US13163215
申请日：2011-06-17
申请人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
IPC分类号： H01L29/78
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F41/307 , H01L43/08
摘要： Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a thickness not less than or equal to 0.1 nm to not more than or equal to 0.6 nm and interface roughness less than 0.5 nm, and information is stored in the storage layer through change in direction of magnetization of the storage layer by applying a current in a stacking direction and injecting a spin-polarized electron.
摘要翻译：这里公开了一种存储元件，包括：存储层，被配置为基于磁性材料的磁化状态来保持信息; 以及被配置为提供具有隧道势垒层的介质的存储层的磁化固定层，其中所述隧道势垒层具有不小于或等于0.1nm至不大于或等于0.6nm的厚度，并且界面粗糙度减去通过在层叠方向施加电流并注入自旋极化电子，通过存储层的磁化方向的变化来将信息存储在存储层中。

5. 发明授权

US08445980B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08445980B2
公开(公告)日：2013-05-21
申请号：US13216453
申请日：2011-08-24
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675
摘要： There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.
摘要翻译：公开了一种包含分层结构的存储元件。层状结构包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 设置在所述存储层和所述磁化固定层之间的绝缘层; 以及在层叠结构的层叠方向上注入自旋极化的电子的存储层的与绝缘层侧面相反的面侧的盖层，由此磁化存储层的方向变化，进行信息记录，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，至少与盖层的记忆层由Ta膜形成。

6. 发明授权

US08436438B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08436438B2
公开(公告)日：2013-05-07
申请号：US13216464
申请日：2011-08-24
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/16 , G11C11/161
摘要： There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, the insulating layer is formed of an oxide film, and the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer.
摘要翻译：提供了包括具有垂直于膜面的磁化的存储层的存储元件; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录的信息，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，绝缘层由氧化膜形成，并且存储层由Co-Fe- B，与绝缘层的界面附近B的浓度低，B的浓度随着从绝缘层后退而增加。

7. 发明申请

US20120294079A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120294079A1
公开(公告)日：2012-11-22
申请号：US13465755
申请日：2012-05-07
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： G11C11/15
CPC分类号： H01L43/10 , G11C11/161 , H01L43/02 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要： A memory element including a memory layer to hold the information by the magnetization state of a magnetic substance, a magnetization pinned layer having magnetization serving as a reference of the information stored in the memory layer, an intermediate layer formed from a nonmagnetic substance disposed between the memory layer and the magnetization pinned layer, a magnetic coupling layer disposed adjoining the magnetization pinned layer and opposing to the intermediate layer, and a high coercive force layer disposed adjoining the magnetic coupling layer, wherein the information is stored by reversing magnetization of the memory layer, making use of spin torque magnetization reversal generated along with a current passing in the lamination direction of the layered structure including the memory layer, the intermediate layer, and the magnetization pinned layer, and the magnetic coupling layer has a two-layer laminate structure.
摘要翻译：一种存储元件，包括通过磁性物质的磁化状态保持信息的存储层，具有作为存储在存储层中的信息的参考的磁化的磁化固定层，由设置在存储层中的非磁性物质形成的中间层存储层和磁化固定层，邻近所述磁化被钉扎层并与所述中间层相对设置的磁耦合层和邻近所述磁耦合层设置的高矫顽力层，其中所述信息通过反转存储层的磁化而被存储利用随着在包括存储层，中间层和磁化被钉扎层的层叠方向的层叠方向上流过的电流产生的自旋转矩磁化反转，并且磁耦合层具有两层层叠结构。

8. 发明申请

US20120281462A1 STORAGE ELEMENT AND STORAGE DEVICE 失效
标题翻译：存储元件和存储设备
公开(公告)号：US20120281462A1
公开(公告)日：2012-11-08
申请号：US13434478
申请日：2012-03-29
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Tetsuya Asayama , Hiroyuki Uchida
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Tetsuya Asayama , Hiroyuki Uchida
IPC分类号： G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/10
摘要： A storage element includes a storage layer that stores information on the basis of a magnetization state of a magnetic material; a fixed magnetization layer that has a magnetization serving as a reference of the information stored in the storage layer; an interlayer that is formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a cap layer that is provided to be adjacent to the storage layer and opposite to the interlayer; and a metal cap layer that is provided to be adjacent to the cap layer and opposite to the storage layer.
摘要翻译：存储元件包括：存储层，其基于磁性材料的磁化状态存储信息; 具有作为存储在存储层中的信息的参考的磁化的固定磁化层; 由非磁性材料形成并介于所述存储层和所述固定磁化层之间的中间层; 盖层，其设置成与所述存储层相邻并与所述中间层相对; 以及设置成与盖层相邻并与存储层相对的金属盖层。

9. 发明申请

US20120056284A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120056284A1
公开(公告)日：2012-03-08
申请号：US13216453
申请日：2011-08-24
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675
摘要： There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.
摘要翻译：公开了一种包含分层结构的存储元件。层状结构包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 设置在所述存储层和所述磁化固定层之间的绝缘层; 以及在层叠结构的层叠方向上注入自旋极化的电子的存储层的与绝缘层侧面相反的面侧的盖层，由此磁化存储层的方向变化，进行信息记录，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，至少与盖层的记忆层由Ta膜形成。

10. 发明申请

US20110316102A1 STORAGE ELEMENT AND STORAGE DEVICE 有权
标题翻译：存储元件和存储设备
公开(公告)号：US20110316102A1
公开(公告)日：2011-12-29
申请号：US13116755
申请日：2011-05-26
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161
摘要： A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer.
摘要翻译：存储元件包括：存储层，其被配置为基于磁性材料的磁化状态保持信息，并且包括其磁化方向在垂直于膜平面，非磁性层和铁磁层的方向上的垂直磁化层其沿着膜平面的方向具有容易磁化的轴，并且具有相对于垂直于膜平面的方向倾斜角度在15度至45度范围内的磁化方向，所述存储层通过垂直磁化层和铁磁层，介于非磁性层和垂直磁化层与铁磁层之间的磁耦合; 磁化钉扎层; 和非磁性中间层。

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