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1. 发明授权

US5768184A Performance non-volatile semiconductor memory device 失效
标题翻译：性能非易失性半导体存储器件
公开(公告)号：US5768184A
公开(公告)日：1998-06-16
申请号：US594437
申请日：1996-01-31
申请人： Yutaka Hayashi , Machio Yamagishi
发明人： Yutaka Hayashi , Machio Yamagishi
IPC分类号： H01L21/8247 , G11C11/56 , H01L27/115 , H01L29/788 , H01L29/792 , G11C11/34
CPC分类号： G11C11/5621 , G11C11/5642 , G11C2211/5631 , G11C2211/5634
摘要： A non-volatile semiconductor memory device including a plurality of non-volatile memory cells and a plurality of reference cells provided for corresponding to storage states in the non-volatile memory cell, generating a reference current which is a current between two output currents of at least two reference cells or a current proportional to the current when data reading from the non-volatile memory cell, and comparing the reference current and a current from the non-volatile memory cell to read out a data stored in the non-volatile memory cell.
摘要翻译：一种非易失性半导体存储器件，包括多个非易失性存储器单元和与非易失性存储单元中的存储状态对应地设置的多个参考单元，产生参考电流，该参考电流是两个输出电流之间的电流至少两个参考单元或与来自非易失性存储单元的数据读取时的电流成比例的电流，以及比较来自非易失性存储单元的参考电流和电流以读出存储在非易失性存储单元中的数据。

2. 发明授权

US5737281A Data writing method and device of semiconductor device 失效
标题翻译：半导体器件的数据写入方法和器件
公开(公告)号：US5737281A
公开(公告)日：1998-04-07
申请号：US611083
申请日：1996-03-05
申请人： Minoru Takeda , Yutaka Hayashi , Machio Yamagishi
发明人： Minoru Takeda , Yutaka Hayashi , Machio Yamagishi
IPC分类号： G03F7/20 , G11C7/00 , G11C17/08 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , G11B13/00 , G11C11/34
CPC分类号： H01L29/792 , G11C17/08 , G11C7/005 , H01L29/7881
摘要： An ultraviolet laser beam emitted from a laser beam source 1 is subjected to on/off control at an AOM 3, is linearly scanned at an equal speed by a polygon mirror 5 and an f.THETA. lens 6, is collected by an object lens 7, and is selectively spot-irradiated to a memory cell array of a semiconductor chip 8 on an XY stage 9 two-dimensionally moved by a control device 10 so as to write a pattern corresponding to desired data, whereby a custom ROM can be supplied in flexible production on a timely basis meeting market trends.
摘要翻译：从激光束源1发射的紫外激光束在AOM 3处进行开/关控制，通过多面镜5和f THETA透镜6以等速线性扫描由物镜7收集，并且被选择性地点照射到由控制装置10二维移动的XY平台9上的半导体芯片8的存储单元阵列，以便写入对应于期望数据的图案，从而可以灵活地提供定制ROM 及时生产符合市场趋势。

3. 发明授权

US5627781A Nonvolatile semiconductor memory 失效
标题翻译：非易失性半导体存储器
公开(公告)号：US5627781A
公开(公告)日：1997-05-06
申请号：US555144
申请日：1995-11-08
申请人： Yutaka Hayashi , Machio Yamagishi
发明人： Yutaka Hayashi , Machio Yamagishi
IPC分类号： G11C17/00 , G11C7/06 , G11C16/04 , G11C16/06 , G11C16/28 , G11C7/00 , G11C8/00
CPC分类号： G11C16/28 , G11C7/062
摘要： A rewritable nonvolatile semiconductor memory device having a plurality of memory cells which are electrically and reversably variable in threshold values and one pair of reference cells, provided for each predetermined number of memory cells, having the same cross-sectional structure as the memory cells, the pair of reference cells having written in them data of opposite phases, and, at the time of reading, the currents of the pair of reference cells being combined to produce a reference current and the data being determined by comparing this with the signal current of the memory cell.
摘要翻译：一种可重写的非易失性半导体存储器件，其具有多个存储单元，所述多个存储单元电流可逆地以阈值变化，并且为每个预定数量的存储单元提供一对参考单元，具有与存储单元相同的横截面结构，在其中写入了相反相位数据的参考单元对，并且在读取时，组合的一对参考单元的电流产生参考电流，并且通过将数据与该参考单元的信号电流进行比较来确定数据记忆单元

4. 发明授权

US5808339A Two-layered gate structure for a semiconductor device and method for producing the same 失效
公开(公告)号：US5808339A
公开(公告)日：1998-09-15
申请号：US872804
申请日：1997-06-10
申请人： Machio Yamagishi , Takashi Shimada
发明人： Machio Yamagishi , Takashi Shimada
IPC分类号： H01L21/28 , H01L29/423 , H01L29/72
CPC分类号： H01L29/42324 , H01L21/28123
摘要： In order to avoid any concentration of an electric field to gate edges of a two-layered structure and to improve an accumulation performance of charge, a semiconductor device includes a semiconductor substrate; an element isolation region formed to define an element formation region in the semiconductor substrate; a first gate insulating layer formed in a part of a surface of the element formation region; a first gate electrode formed on the first gate insulating layer; an insulating layer for surrounding the first gate electrode with a top surface of the insulating layer being substantially in the same plane as that of a top surface of the first electrode; a second gate insulating layer formed on the first gate electrode; and a second gate electrode formed on the second gate insulating layer. Also, a method therefor is provided.

5. 发明授权

US07304696B2 Image display 失效
标题翻译：图像显示
公开(公告)号：US07304696B2
公开(公告)日：2007-12-04
申请号：US10204733
申请日：2001-12-25
申请人： Machio Yamagishi
发明人： Machio Yamagishi
IPC分类号： G02F1/1335
CPC分类号： G02F1/133603 , G02F1/133555
摘要： The present invention is an image display apparatus having pixels PXLs arranged in a matrix form, and comprises a display panel displaying images by reflecting external light from the front side or by having illumination light from the back side transmit therethrough, and a flat-type back light arranged at the back of the display panel and radiating the illumination light. Each pixel PXL is divided on a flat surface into a reflection area R for reflecting the external light incident from the front side of the display panel to display an image and a transmission area T for transmitting the illumination light incident from the back side of the display panel to display an image. The back light is a flat type, with layers consisting of electrodes (204), (202) and a luminescent layer (203) sandwiched inbetween being formed on a substrate (201), and radiates the illumination light generated from the luminescent layer (203) toward the transmission area T of each pixel PXL when voltage is applied between the electrodes (204), (202).
摘要翻译：本发明是具有以矩阵形式布置的像素PXL的图像显示装置，并且包括通过反射来自前侧的外部光或通过使来自背面的照明光透过的显示图像的平板型背面布置在显示面板背面的光并照射照明光。每个像素PXL在平坦表面上被划分为反射区域R，用于反射从显示面板的前侧入射的外部光以显示图像;以及透射区域T，用于透射从显示器的背面入射的照明光面板显示图像。背光是扁平型的，其中夹在其间的由电极（204），（202）和发光层（203）构成的层形成在基板（201）上，并且辐射由发光层（203）产生的照明光）朝着各像素PXL的透射区域T施加电压（204），（202）之间的电压。

6. 发明授权

US06969291B2 Display apparatus using organic electroluminescent element and manufacturing method thereof 有权
标题翻译：使用有机电致发光元件的显示装置及其制造方法
公开(公告)号：US06969291B2
公开(公告)日：2005-11-29
申请号：US10608197
申请日：2003-06-30
申请人： Tetsuo Urabe , Tatsuya Sasaoka , Mitsunobu Sekiya , Machio Yamagishi
发明人： Tetsuo Urabe , Tatsuya Sasaoka , Mitsunobu Sekiya , Machio Yamagishi
IPC分类号： G09F9/30 , G09F9/00 , H01L27/32 , H01L51/50 , H05B33/00 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22 , H05B33/26 , H01J9/00
CPC分类号： H01L27/3246 , H01L51/5036 , H01L51/5218 , H01L2251/5315
摘要： A display apparatus includes a substrate, a plurality of pixels formed on the substrate, and a barrier plate for separating adjoining pixels from each other. Each pixel includes a lower layer portion having wiring formed on the substrate, an upper layer portion having an organic electro-luminescent element, and a middle layer portion for insulating the lower layer portion and the upper layer portion from each other electrically. The organic electro-luminescent element is connected with the windings through a contact hole formed in the middle layer portion. The barrier plate is disposed in the upper layer portion so as to overlap with a region including a contact hole not suitable for forming the organic electro-luminescent element.
摘要翻译：显示装置包括基板，形成在基板上的多个像素以及用于将相邻的像素彼此分开的阻挡板。每个像素包括具有形成在基板上的布线的下层部分，具有有机电致发光元件的上层部分和用于将下层部分和上层部分彼此电绝缘的中间层部分。有机电致发光元件通过形成在中间层部分中的接触孔与绕组连接。阻挡板设置在上层部分中以与包括不适于形成有机电致发光元件的接触孔的区域重叠。

7. 发明授权

US6054366A Two-layered gate structure for a semiconductor device and method for producing the same 失效
标题翻译：用于半导体器件的两层栅极结构及其制造方法
公开(公告)号：US6054366A
公开(公告)日：2000-04-25
申请号：US33468
申请日：1998-03-02
申请人： Machio Yamagishi , Takashi Shimada
发明人： Machio Yamagishi , Takashi Shimada
IPC分类号： H01L21/28 , H01L29/423 , H01L29/78 , H01L21/10
CPC分类号： H01L29/42324 , H01L21/28123
摘要： In order to avoid any concentration of an electric field to gate edges of a two-layered structure and to improve an accumulation performance of charge, a semiconductor device includes a semiconductor substrate; an element isolation region formed to define an element formation region in the semiconductor substrate; a first gate insulating layer formed in a part of a surface of the element formation region; a first gate electrode formed on the first gate insulating layer; an insulating layer for surrounding the first gate electrode with a top surface of the insulating layer being substantially in the same plane as that of a top surface of the first electrode; a second gate insulating layer formed on the first gate electrode; and a second gate electrode formed on the second gate insulating layer. Also, a method therefor is provided.
摘要翻译：为了避免电场对两层结构的栅极边缘的集中，并且为了提高电荷的积累性能，半导体器件包括半导体衬底; 形成为限定半导体衬底中的元件形成区域的元件隔离区域; 形成在所述元件形成区域的表面的一部分中的第一栅极绝缘层; 形成在所述第一栅极绝缘层上的第一栅电极; 用于围绕所述第一栅极的绝缘层，所述绝缘层的顶表面基本上在与所述第一电极的顶表面相同的平面中; 形成在所述第一栅电极上的第二栅极绝缘层; 以及形成在所述第二栅极绝缘层上的第二栅电极。另外，提供了一种方法。

8. 发明授权

US06614174B1 Display apparatus using organic electroluminescent element and manufacturing method thereof 有权
标题翻译：使用有机电致发光元件的显示装置及其制造方法
公开(公告)号：US06614174B1
公开(公告)日：2003-09-02
申请号：US09711880
申请日：2000-11-15
申请人： Tetsuo Urabe , Tatsuya Sasaoka , Mitsunobu Sekiya , Machio Yamagishi
发明人： Tetsuo Urabe , Tatsuya Sasaoka , Mitsunobu Sekiya , Machio Yamagishi
IPC分类号： H01J162
CPC分类号： H01L27/3246 , H01L51/5036 , H01L51/5218 , H01L2251/5315
摘要： A display apparatus includes a substrate, a plurality of pixels formed on the substrate, and a barrier plate for separating adjoining pixels from each other. Each pixel includes a lower layer portion having wiring formed on the substrate, an upper layer portion having an organic electro-luminescent element, and a middle layer portion for insulating the lower layer portion and the upper layer portion from each other electrically. The organic electro-luminescent element is connected with the wiring through a contact hole formed in the middle layer portion. The barrier plate is disposed in the upper layer portion so as to overlap with a region including a contact hole not suitable for forming the organic electro-luminescent element.
摘要翻译：显示装置包括基板，形成在基板上的多个像素以及用于将相邻的像素彼此分开的阻挡板。每个像素包括具有形成在基板上的布线的下层部分，具有有机电致发光元件的上层部分和用于将下层部分和上层部分彼此电绝缘的中间层部分。有机电致发光元件通过形成在中间层部分的接触孔与布线连接。阻挡板设置在上层部分中以与包括不适于形成有机电致发光元件的接触孔的区域重叠。

9. 发明授权

US06501466B1 Active matrix type display apparatus and drive circuit thereof 失效
标题翻译：有源矩阵型显示装置及其驱动电路
公开(公告)号：US06501466B1
公开(公告)日：2002-12-31
申请号：US09709533
申请日：2000-11-13
申请人： Machio Yamagishi , Akira Yumoto
发明人： Machio Yamagishi , Akira Yumoto
IPC分类号： G09G500
CPC分类号： G09G3/3241 , G09G2300/0842 , G09G2310/0262
摘要： Each of picture elements comprises an input transistor for accepting a signal current from a data line when a scanning line is selected, a conversion transistor for converting the signal current into a voltage and for holding thus converted voltage, and a drive transistor for driving a light emitting device with drive current corresponding to the converted voltage. The conversion transistor flows the signal current to its channel to generate the voltage corresponding to the converted voltage and a capacitor to restrain the generated voltage. Further the drive transistor flows the drive current corresponding to the voltage stored in the capacitor. In this case the threshold voltage of the drive transistor is set not to be smaller than the threshold voltage of the conversion transistor, and thereby a leakage current flowing through the light emitting device is suppressed.
摘要翻译：每个像素包括用于在选择扫描线时从数据线接收信号电流的输入晶体管，用于将信号电流转换为电压并用于保持如此转换的电压的转换晶体管，以及用于驱动光的驱动晶体管驱动电流对应于转换的电压。转换晶体管将信号电流流向其通道以产生对应于转换的电压的电压和电容器以抑制所产生的电压。此外，驱动晶体管流过对应于存储在电容器中的电压的驱动电流。在这种情况下，将驱动晶体管的阈值电压设定为不小于转换晶体管的阈值电压，从而抑制流过发光器件的漏电流。

10. 发明授权

US5437762A Method and apparatus for semiconductor memory 失效
标题翻译：半导体存储器的方法和装置
公开(公告)号：US5437762A
公开(公告)日：1995-08-01
申请号：US274587
申请日：1994-07-13
申请人： Akihiko Ochiai , Makoto Hashimoto , Takeshi Matsushita , Machio Yamagishi , Hiroshi Sato , Muneharu Shimanoe
发明人： Akihiko Ochiai , Makoto Hashimoto , Takeshi Matsushita , Machio Yamagishi , Hiroshi Sato , Muneharu Shimanoe
IPC分类号： H01L21/28 , H01L21/762 , H01L21/8247 , H01L21/84 , H01L21/306
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/76264 , H01L21/84 , H01L21/76275 , H01L21/76283 , Y10S148/012 , Y10S148/135
摘要： The invention concerns a method of forming various kinds of SOI structures and semiconductor memory devices using the forming technique. It is useful, for example, in SRAM or EEPROM devices. In EEPROM, it relates, in particular, to a method of manufacturing a non-volatile memory device in which a control gate electrode layer is laminated by way of an insulator film on a floating gate electrode layer. It includes a method of manufacturing a structure via the steps of forming an etching stopping layer on the surface of a silicon substrate, forming an epitaxially grown silicon layer on said etching stopping layer, bonding said silicon substrate formed with said silicon layer with another substrate as the insulator substrate, grinding said silicon substrate from the rear face and etching it until said etching stopping layer is exposed and removing said etching stopper layer, with or without polishing the other surface of said silicon substrate.
摘要翻译：本发明涉及使用成形技术形成各种SOI结构和半导体存储器件的方法。例如，在SRAM或EEPROM设备中是有用的。在EEPROM中，特别涉及一种制造非易失性存储器件的方法，其中控制栅电极层通过绝缘膜层叠在浮栅电极层上。它包括通过在硅衬底的表面上形成蚀刻停止层的步骤制造结构的方法，在所述蚀刻停止层上形成外延生长的硅层，将形成有所述硅层的硅衬底与另一个衬底接合作为绝缘体衬底，从后表面研磨所述硅衬底并对其进行蚀刻，直到所述蚀刻停止层露出，并且在所述硅衬底的另一表面上抛光或不抛光所述蚀刻停止层。

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