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1. 发明授权

US07615459B1 Manufacturing method for variable resistive element 有权
标题翻译：可变电阻元件的制造方法
公开(公告)号：US07615459B1
公开(公告)日：2009-11-10
申请号：US12190398
申请日：2008-08-12
申请人： Yushi Inoue , Tetsuya Ohnishi , Kazuya Ishihara , Takahiro Shibiuya , Yasunari Hosoi , Shinobu Yamazaki , Takashi Nakano
发明人： Yushi Inoue , Tetsuya Ohnishi , Kazuya Ishihara , Takahiro Shibiuya , Yasunari Hosoi , Shinobu Yamazaki , Takashi Nakano
IPC分类号： H01L21/20
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/124 , H01L45/146 , H01L45/1633
摘要： A manufacturing method for a variable resistive element according to which a stable switching operation can be achieved with excellent reproducibility is provided. A conductive thin film is deposited on a semiconductor substrate and patterned to a predetermined form, and after that, a first interlayer insulating film is deposited. An opening is then created in a predetermined location on the first interlayer insulating film in such a manner that the upper surface of the conductive thin film is exposed and the thickness of the conductive thin film formed at the bottom of this opening is reduced through processing, and after that, an oxidation process is carried out on the periphery of the exposed conductive thin film. As a result, a variable resistor film is formed in the peripheral region of the opening, and this variable resistor film divides the conductive thin film into a first electrode and a second electrode.
摘要翻译：提供了一种可变电阻元件的制造方法，其中可以以优异的再现性实现稳定的开关操作。将导电薄膜沉积在半导体衬底上并图案化为预定形式，之后沉积第一层间绝缘膜。然后在第一层间绝缘膜上的预定位置处以导电薄膜的上表面露出并且形成在该开口底部的导电薄膜的厚度通过加工而减小的方式形成开口，之后，在露出的导电性薄膜的周围进行氧化处理。结果，在开口的周边区域中形成可变电阻膜，该可变电阻膜将导电薄膜分成第一电极和第二电极。

2. 发明授权

US08115586B2 Variable resistance element, and its manufacturing method 有权
标题翻译：可变电阻元件及其制造方法
公开(公告)号：US08115586B2
公开(公告)日：2012-02-14
申请号：US12298089
申请日：2007-02-16
申请人： Yasunari Hosoi , Kazuya Ishihara , Takahiro Shibuya , Tetsuya Ohnishi , Takashi Nakano
发明人： Yasunari Hosoi , Kazuya Ishihara , Takahiro Shibuya , Tetsuya Ohnishi , Takashi Nakano
IPC分类号： H01C7/10 , H01C7/13
CPC分类号： H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/124 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1633 , H01L45/1691 , Y10T29/49082
摘要： Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper electrode or a lower electrode, and a method for manufacturing the variable resistive element. The cross section of a current path, in which an electric current flows through between the two electrodes via the variable resistor body at the time of applying the voltage pulse to between the two electrodes, is formed with a line width of narrower than that of any of the two electrodes and of smaller than a minimum work dimension regarding manufacturing processes, so that its area can be made smaller than that of the electrically contributing region in the variable resistive element of the prior art.
摘要翻译：提供了一种可变电阻元件，其具有可变电阻体中的电赋值区域小于由上电极或下电极限定的面积的构造，以及制造可变电阻元件的方法。在将电压脉冲施加到两个电极之间时，通过可变电阻体在两个电极之间流过电流的电流路径的横截面形成为比任何电极的线宽窄的线宽并且小于关于制造工艺的最小工作尺寸，使得其面积可以比现有技术的可变电阻元件中的电赋值区的面积小。

3. 发明授权

US08497492B2 Variable resistive element, and its manufacturing method 有权
公开(公告)号：US08497492B2
公开(公告)日：2013-07-30
申请号：US12298818
申请日：2007-02-23
申请人： Yasunari Hosoi , Kazuya Ishihara , Takahiro Shibuya , Tetsuya Ohnishi , Takashi Nakano
发明人： Yasunari Hosoi , Kazuya Ishihara , Takahiro Shibuya , Tetsuya Ohnishi , Takashi Nakano
IPC分类号： H01L47/00
CPC分类号： H01L45/1253 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/1273 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1633 , H01L45/1691
摘要： A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element.

4. 发明申请

US20090200640A1 VARIABLE RESISTIVE ELEMENT, AND ITS MANUFACTURING METHOD 有权
标题翻译：可变电阻元件及其制造方法
公开(公告)号：US20090200640A1
公开(公告)日：2009-08-13
申请号：US12298818
申请日：2007-02-23
申请人： Yasunari Hosoi , Kazuya Ishihara , Takahiro Shibuya , Tetsuya Ohnishi , Takashi Nakano
发明人： Yasunari Hosoi , Kazuya Ishihara , Takahiro Shibuya , Tetsuya Ohnishi , Takashi Nakano
IPC分类号： H01L29/8605 , H01L21/02 , H01L45/00
CPC分类号： H01L45/1253 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/1273 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1633 , H01L45/1691
摘要： A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element.
摘要翻译：提供一种可变电阻元件，其包括可变电阻体的电赋能区的面积比由上电极或下电极约束的面积更小的构造及其制造方法。凸起电极材料形成在布置在基底基板上的下电极上。突起电极材料在与下电极的接触面不同的表面与可变电阻体接触。可变电阻体与不同于凸块电极材料的接触表面的表面与上电极接触。因此，凸起电极材料（可变电阻体）与上部电极之间的交叉点区域成为可变电阻体的电性区域，与现有的变量区域相比，能够减小面积电阻元件。

5. 发明申请

US20090096568A1 VARIABLE RESISTANCE ELEMENT, AND ITS MANUFACTURING METHOD 有权
标题翻译：可变电阻元件及其制造方法
公开(公告)号：US20090096568A1
公开(公告)日：2009-04-16
申请号：US12298089
申请日：2007-02-16
申请人： Yasunari Hosoi , Kazuya Ishihara , Takahiro Shibuya , Tetsuya Ohnishi , Takashi Nakano
发明人： Yasunari Hosoi , Kazuya Ishihara , Takahiro Shibuya , Tetsuya Ohnishi , Takashi Nakano
IPC分类号： H01C7/10 , H01C13/02
CPC分类号： H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/124 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1633 , H01L45/1691 , Y10T29/49082
摘要： Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper electrode or a lower electrode, and a method for manufacturing the variable resistive element. The cross section of a current path, in which an electric current flows through between the two electrodes via the variable resistor body at the time of applying the voltage pulse to between the two electrodes, is formed with a line width of narrower than that of any of the two electrodes and of smaller than a minimum work dimension regarding manufacturing processes, so that its area can be made smaller than that of the electrically contributing region in the variable resistive element of the prior art.
摘要翻译：提供了一种可变电阻元件，其具有可变电阻体中的电赋值区域小于由上电极或下电极限定的面积的构造，以及制造可变电阻元件的方法。在将电压脉冲施加到两个电极之间时，通过可变电阻体在两个电极之间流过电流的电流路径的横截面形成为比任何电极的线宽窄的线宽并且小于关于制造工艺的最小工作尺寸，使得其面积可以比现有技术的可变电阻元件中的电赋值区的面积小。

6. 发明授权

US07894239B2 Variable resistance element, method for producing the same, and nonvolatile semiconductor storage device 有权
标题翻译：可变电阻元件及其制造方法以及非易失性半导体存储器件
公开(公告)号：US07894239B2
公开(公告)日：2011-02-22
申请号：US12328648
申请日：2008-12-04
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
IPC分类号： G11C7/00
CPC分类号： G11C8/08 , G11C13/0007 , G11C13/0028 , G11C2013/0083 , G11C2213/32 , G11C2213/56 , G11C2213/77 , H01C7/108 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1658 , Y10T29/49082
摘要： The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.
摘要翻译：本发明的可变电阻元件是具有电极，另一个电极和夹在电极之间并具有电阻的金属氧化物材料的可变电阻元件，在电极之间，响应于施加在电极之间的电压而可逆地改变电极。可变电阻元件还包括在金属氧化物材料内部的具有比金属氧化物材料低的电阻并且与至少任一个电极不接触的低电阻材料。这使得可以降低用于在金属氧化物材料内部提供导电部分的形成电压，而不会导致泄漏电流增加。

7. 发明申请

US20090147558A1 VARIABLE RESISTANCE ELEMENT, METHOD FOR PRODUCING THE SAME, AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：可变电阻元件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20090147558A1
公开(公告)日：2009-06-11
申请号：US12328648
申请日：2008-12-04
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
IPC分类号： G11C11/21 , H01C7/10 , H01C17/00
CPC分类号： G11C8/08 , G11C13/0007 , G11C13/0028 , G11C2013/0083 , G11C2213/32 , G11C2213/56 , G11C2213/77 , H01C7/108 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1658 , Y10T29/49082
摘要： The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.
摘要翻译：本发明的可变电阻元件是具有电极，另一个电极和夹在电极之间并具有电阻的金属氧化物材料的可变电阻元件，在电极之间，响应于施加在电极之间的电压而可逆地改变电极。可变电阻元件还包括在金属氧化物材料内部的具有比金属氧化物材料低的电阻并且与至少任一个电极不接触的低电阻材料。这使得可以降低用于在金属氧化物材料内部提供导电部分的形成电压，而不会导致泄漏电流增加。

8. 发明授权

US08023312B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08023312B2
公开(公告)日：2011-09-20
申请号：US12515286
申请日：2007-11-05
申请人： Shinobu Yamazaki , Yasunari Hosoi , Nobuyoshi Awaya , Shinichi Sato , Kenichi Tanaka
发明人： Shinobu Yamazaki , Yasunari Hosoi , Nobuyoshi Awaya , Shinichi Sato , Kenichi Tanaka
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/72 , G11C2213/76 , G11C2213/77 , G11C2213/79 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1633
摘要： A nonvolatile semiconductor memory device include: a two terminal structured variable resistive element, wherein resistive characteristics defined by current-voltage characteristics at both ends transit between low and high resistance states stably by applying a voltage satisfying predetermined conditions to the both ends. A transition from the low resistance state to the high resistance state occurs by applying a voltage of a first polarity whose absolute value is at or higher than first threshold voltage, and the reverse transition occurs by applying a voltage of a second polarity whose absolute value is at or higher than a second threshold voltage. A load circuit is connected to the variable resistive element in series having an adjustable load resistance. A voltage generation circuit applies a voltage to both ends of a serial circuit. The variable resistive element can transit between the states by adjusting a resistance of the load circuit.
摘要翻译：非易失性半导体存储器件包括：二端结构可变电阻元件，其中由两端的电流 - 电压特性限定的电阻特性通过向两端施加满足预定条件的电压来稳定地传递低电阻状态和高电阻状态。通过施加绝对值等于或高于第一阈值电压的第一极性的电压而发生从低电阻状态向高电阻状态的转变，并且通过施加绝对值为绝对值的第二极性的电压，等于或高于第二阈值电压。负载电路与可变负载电阻串联连接到可变电阻元件。电压产生电路向串联电路的两端施加电压。可变电阻元件可以通过调整负载电路的电阻在状态之间转换。

9. 发明授权

US07796416B2 Variable resistance element, its manufacturing method and semiconductor memory device comprising the same 有权
标题翻译：可变电阻元件，其制造方法和包括该可变电阻元件的半导体存储器件
公开(公告)号：US07796416B2
公开(公告)日：2010-09-14
申请号：US12092766
申请日：2006-12-13
申请人： Kazuya Ishihara , Yasunari Hosoi , Shinji Kobayashi
发明人： Kazuya Ishihara , Yasunari Hosoi , Shinji Kobayashi
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1633 , Y10T29/49082
摘要： Provided is a variable resistance element capable of performing a stable resistance switching operation and having a favorable resistance value retention characteristics, comprising a variable resistor 2 sandwiched between a upper electrode 1 and lower electrode 3 and formed of titanium oxide or titanium oxynitride having a crystal grain diameter of 30 nm or less. When the variable resistance 2 is formed under the substrate temperature of 150° C. to 500° C., an anatase-type crystal having a crystal grain diameter of 30 nm or less is formed. Since the crystalline state of the variable resistor changes by applying a voltage pulse and the resistance value changes, no forming process is required. Moreover, it is possible to perform a stable resistance switching operation and obtain an excellent effect that the resistance fluctuation is small even if the switching is repeated, or the variable resistance element is stored for a long time under a high temperature.
摘要翻译：提供一种能够进行稳定的电阻切换操作并具有良好的电阻值保持特性的可变电阻元件，包括夹在上电极1和下电极3之间并由具有晶粒的氧化钛或氮氧化钛形成的可变电阻器2 直径30nm以下。当在150℃至500℃的衬底温度下形成可变电阻2时，形成晶粒直径为30nm以下的锐钛矿型晶体。由于可变电阻器的结晶状态通过施加电压脉冲而变化，并且电阻值改变，因此不需要形成工艺。此外，即使重复切换，或者可变电阻元件在高温下长时间存储，也可以进行稳定的电阻切换操作，并获得优异的电阻波动小的效果。

10. 发明申请

US20100172170A1 VARIABLE RESISTIVE ELEMENT, MANUFACTURING METHOD FOR SAME, AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：可变电阻元件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20100172170A1
公开(公告)日：2010-07-08
申请号：US12598642
申请日：2008-04-07
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
IPC分类号： G11C11/56 , H01L29/22 , H01L21/44
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.
摘要翻译：提供一种执行高速和低功耗操作的可变电阻元件。可变电阻元件包括在第一和第二电极之间的金属氧化物层，其中第一和第二电极之间的电阻根据跨越第一和第二电极的电应力的应用而可逆地改变。金属氧化物层具有灯丝，其是在第一和第二电极之间流动的电流的密度局部增加的电流路径。在特定电极和金属氧化物层之间的界面上至少包括作为第一和第二电极中的一个或两个的特定电极和灯丝之间的界面附近的部分设置有界面氧化物，其界面氧化物是包含在该特定电极中并且与金属氧化物层的氧化物不同的至少一种元素的氧化物。

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