专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06824653B2 Magnetron with controlled DC power 有权
公开(公告)号：US06824653B2
公开(公告)日：2004-11-30
申请号：US10371463
申请日：2003-02-21
申请人： Yury Oshmyansky , Sergey Mishin , Richard C. Ruby , John D. Larson, III
发明人： Yury Oshmyansky , Sergey Mishin , Richard C. Ruby , John D. Larson, III
IPC分类号： C23C1434
CPC分类号： H01J37/3444 , C23C14/352 , H01J37/3408
摘要： A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with target aging. A magnetron according to the present teachings includes a set of concentric targets for sputtering a film onto a wafer in response to an AC power and a DC power applied to the targets and a power controller that adjusts the DC power. The adjustments to the DC power enable the magnetron to maintain uniformity in the thicknesses of films formed with the magnetron throughout the life of its targets.

2. 发明授权

US06472954B1 Controlled effective coupling coefficients for film bulk acoustic resonators 有权
标题翻译：薄膜体声共振器的受控有效耦合系数
公开(公告)号：US06472954B1
公开(公告)日：2002-10-29
申请号：US09841234
申请日：2001-04-23
申请人： Richard C. Ruby , Paul Bradley , Domingo Figueredo , John D. Larson, III , Yury Oshmyansky
发明人： Richard C. Ruby , Paul Bradley , Domingo Figueredo , John D. Larson, III , Yury Oshmyansky
IPC分类号： H03H9205
CPC分类号： H03H9/706 , H03H3/04 , H03H9/0571 , H03H9/587 , H03H2003/0471 , Y10T29/42
摘要： In an array of acoustic resonators, the effective coupling coefficient of first and second filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. In one embodiment, the tailoring of the coefficients is achieved by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers. For example, the total thickness of the electrode layers of the transmit filter may be in the range of 1.2 to 2.8 times the total thickness of the electrode layers of the receive filter. In another embodiment, the coefficient tailoring is achieved by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Preferably, the capacitor is formed of the same materials used to fabricate a film bulk acoustic resonator (FBAR). The capacitor may be mass loaded to change its frequency by depositing a metal layer on the capacitor. Alternatively, the mass loading may be provided by forming the capacitor directly on a substrate.
摘要翻译：在声谐振器阵列中，分别对第一和第二滤波器的有效耦合系数进行定制，以实现期望的频率响应。在双工器实施例中，发射带通滤波器的有效耦合系数低于同一双工器的接收带通滤波器的有效耦合系数。在一个实施例中，通过改变压电层的厚度与电极层的总厚度之比来实现系数的调整。例如，发射滤波器的电极层的总厚度可以在接收滤波器的电极层的总厚度的1.2至2.8倍的范围内。在另一个实施例中，通过与滤波器内的声谐振器并联形成电容器来实现系数调整，有效耦合系数将被降低。优选地，电容器由用于制造膜体声波谐振器（FBAR）的相同材料形成。可以通过在电容器上沉积金属层来对电容器进行质量负载以改变其频率。或者，可以通过将电容器直接形成在基板上来提供质量负载。

3. 发明授权

US06927651B2 Acoustic resonator devices having multiple resonant frequencies and methods of making the same 有权
标题翻译：具有多个谐振频率的声谐振器装置及其制造方法
公开(公告)号：US06927651B2
公开(公告)日：2005-08-09
申请号：US10436404
申请日：2003-05-12
申请人： John D. Larson, III , Yury Oshmyansky
发明人： John D. Larson, III , Yury Oshmyansky
IPC分类号： H03H3/04 , H03H9/17 , H03H9/58
CPC分类号： H03H9/176 , H03H3/04 , H03H9/172
摘要： Acoustic resonator devices having multiple resonant frequencies and methods of making the same are described. In one aspect, an acoustic resonator device includes an acoustic resonant structure that includes first and second electrodes and first and second piezoelectric layers. The first and second electrodes abut opposite sides of a resonant volume free of any interposing electrodes. The first and second piezoelectric layers are disposed for acoustic vibrations in the resonant volume and have different respective acoustical resonance characteristics and respective piezoelectric axes oriented in different directions. The acoustic resonant structure has resonant electric responses at first and second resonant frequencies respectively determined at least in part by the acoustical resonance characteristics of the first and second piezoelectric layers.
摘要翻译：描述具有多个谐振频率的声谐振器装置及其制造方法。一方面，声谐振器装置包括包括第一和第二电极以及第一和第二压电层的声学谐振结构。第一和第二电极邻接没有任何插入电极的谐振体的相对侧。第一和第二压电层设置在共振体积中的声振动，并且具有不同的各自的声学共振特性和沿不同方向定向的各个压电轴。声学谐振结构在第一和第二谐振频率处具有至少部分地由第一和第二压电层的声共振特性确定的谐振电响应。

4. 发明授权

US06954121B2 Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method 失效
标题翻译：用于控制膜体声波谐振器中的压电耦合系数的方法和体现该方法的装置
公开(公告)号：US06954121B2
公开(公告)日：2005-10-11
申请号：US10457737
申请日：2003-06-09
申请人： Paul D. Bradley , Yury Oshmyansky , Benjamin Yu , John D. Larson, III
发明人： Paul D. Bradley , Yury Oshmyansky , Benjamin Yu , John D. Larson, III
IPC分类号： H01L41/09 , H01L41/187 , H01L41/22 , H03H3/04 , H03H9/02 , H03H9/17 , H03H9/00
CPC分类号： H03H9/173 , H03H3/04 , H03H9/02149
摘要： An apparatus such as a thin film resonator has a bottom electrode, a top electrode, and a composite layer between the two electrodes. The composite layer includes a piezoelectric (PZ) layer having a first coupling coefficient and a coupling coefficient control (CCC) layer having a second coupling coefficient. By varying the relative thicknesses of the PZ layer and the CCC layer during the manufacturing process, the coupling coefficient of the resonator can be established (to any value between the first coupling coefficient and the second coupling coefficient) with minimal impact on resonant frequency. Further, it is relatively less difficult to fabricate the PZ layer and the CCC layer having the desired coupling coefficient (as a combination of the first coupling coefficient and the second coupling coefficient) compared to the difficulties of fabrication of a uniform PZ layer having the desired coupling coefficient.
摘要翻译：诸如薄膜谐振器的装置在两个电极之间具有底电极，顶电极和复合层。复合层包括具有第一耦合系数的压电（PZ）层和具有第二耦合系数的耦合系数控制（CCC）层。通过在制造过程中改变PZ层和CCC层的相对厚度，可以以对谐振频率的最小影响来建立谐振器的耦合系数（在第一耦合系数和第二耦合系数之间的任何值）。此外，制造具有期望的耦合系数（作为第一耦合系数和第二耦合系数的组合）的PZ层和CCC层相对于制造具有期望的均匀PZ层的困难相对较难，耦合系数。

5. 发明授权

US07332985B2 Cavity-less film bulk acoustic resonator (FBAR) devices 有权
标题翻译：无腔膜体声共振器（FBAR）器件
公开(公告)号：US07332985B2
公开(公告)日：2008-02-19
申请号：US10969744
申请日：2004-10-19
申请人： John D Larson, III , Stephen Ellis , Paul A. Bradley , Yury Oshmyansky
发明人： John D Larson, III , Stephen Ellis , Paul A. Bradley , Yury Oshmyansky
IPC分类号： H03H9/54 , H03H9/60
CPC分类号： H03H9/589 , H03H9/02102 , H03H9/132 , H03H9/175 , H03H9/584 , H03H9/587 , H03H9/605
摘要： The film bulk acoustic resonator (FBAR) device comprises a substrate, an acoustic Bragg reflector over the substrate, a piezoelectric element over the acoustic Bragg reflector, and a remote-side electrode over the piezoelectric element. The acoustic Bragg reflector comprises a metal Bragg layer juxtaposed with a plastic Bragg layer. The large ratio between the acoustic impedances of the plastic material of the plastic Bragg layer and the metal of the metal Bragg layer provides sufficient acoustic isolation between the FBAR and the substrate for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the substrate.
摘要翻译：膜体声波谐振器（FBAR）器件包括衬底，衬底上的声布拉格反射器，声布拉格反射器上方的压电元件和压电元件上方的远端侧电极。声布拉格反射器包括与塑料布拉格层并置的金属布拉格层。塑料布拉格层的塑料材料和金属布拉格层的金属之间的声阻抗之间的较大比率在FBAR和衬底之间提供足够的声学隔离，以使FBAR器件的频率响应显示较小的（如果有的话）杂散的 FBAR和基片之间的不良声耦合产生的伪影。

6. 发明授权

US06987433B2 Film acoustically-coupled transformer with reverse C-axis piezoelectric material 有权
标题翻译：具有反向C轴压电材料的薄膜声耦合变压器
公开(公告)号：US06987433B2
公开(公告)日：2006-01-17
申请号：US10836653
申请日：2004-04-29
申请人： John D. Larson, III , Yury Oshmyansky
发明人： John D. Larson, III , Yury Oshmyansky
IPC分类号： H03H9/205 , H03H9/54 , H03H9/60
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： An embodiment of the acoustically-coupled transformer has first and second stacked bulk acoustic resonators (SBARs) each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes with piezoelectric material between the electrodes. A first electrical circuit connects one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connects the other FBAR of the first SBAR to the other FBAR of the second SBAR. The c-axis of the piezoelectric material of one of the FBARs is opposite in direction to the c-axes of the piezoelectric materials of the other three FBARs. This arrangement substantially reduces the amplitude of signal-frequency voltages across the acoustic decouplers and significantly improves the common mode rejection of the transformer. This arrangement also allows conductive acoustic decouplers to be used, increasing the available choice of acoustic decoupler materials.
摘要翻译：声耦合变压器的一个实施例具有第一和第二堆叠的体声波谐振器（SBAR），每个具有堆叠的一对薄膜体声波谐振器（FBAR），在FBAR之间具有声耦合器。每个FBAR在电极之间具有与压电材料相对的平面电极。第一电路将第一SBAR的一个FBAR连接到第二SBAR的一个FBAR，并且第二电路将第一SBAR的另一FBAR连接到第二SBAR的另一FBAR。 FBAR中的一个的压电材料的c轴与其他三个FBAR的压电材料的c轴方向相反。这种布置大大降低了声耦合器上的信号频率电压的振幅，并显着地改善了变压器的共模抑制。这种布置还允许使用导电声分离器，从而增加声分离器材料的可用选择。

7. 发明授权

US07367095B2 Method of making an acoustically coupled transformer 有权
标题翻译：制造声耦合变压器的方法
公开(公告)号：US07367095B2
公开(公告)日：2008-05-06
申请号：US11404403
申请日：2006-04-14
申请人： John D. Larson, III , Yury Oshmyansky
发明人： John D. Larson, III , Yury Oshmyansky
IPC分类号： H04R17/00 , H01L41/00 , H03H9/02
CPC分类号： H03H9/605 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , Y10T29/4902 , Y10T29/49128 , Y10T29/49155
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
摘要翻译：声耦合变压器的实施例具有第一层叠体声波谐振器（SBAR）和第二SBAR。每个SBAR具有较低的膜体声波谐振器（FBAR）和上部FBAR，以及FBAR之间的声学解耦器。上部FBAR堆叠在较低FBAR的顶部。每个FBAR具有相对的平面电极和电极之间的压电元件。压电元件的特征在于c轴。下FBAR的压电元件的c轴方向相反，上FBAR的压电元件的c轴方向相反。变压器还具有将第一SBAR的下FBAR连接到第二SBAR的下FBAR的第一电路和将第一SBAR的上FBAR连接到第二SBAR的上FBAR的第二电路。

8. 发明授权

US07358831B2 Film bulk acoustic resonator (FBAR) devices with simplified packaging 有权
标题翻译：薄膜体声波谐振器（FBAR）器件具有简化的封装
公开(公告)号：US07358831B2
公开(公告)日：2008-04-15
申请号：US10969636
申请日：2004-10-19
申请人： John D Larson, III , Stephen Ellis , Yury Oshmyansky
发明人： John D Larson, III , Stephen Ellis , Yury Oshmyansky
IPC分类号： H03H9/54 , H03H9/60
CPC分类号： H03H9/589 , H03H9/02102 , H03H9/132 , H03H9/175 , H03H9/584 , H03H9/587 , H03H9/605
摘要： The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.
摘要翻译：封装膜体声波谐振器（FBAR）器件包括衬底，衬底上的FBAR堆叠，用于将FBAR堆叠与衬底声学隔离的元件，覆盖FBAR堆叠的密封剂以及覆盖FBAR堆叠的声学布拉格反射器 FBAR堆叠和密封剂。 FBAR堆叠包括FBAR并且具有远离衬底的顶表面。 FBAR包括相对的平面电极和电极之间的压电元件。声布拉格反射器包括与金属布拉格层并列的金属布拉格层和塑性布拉格层。金属布拉格层的金属和塑料布拉格层的塑性材料的声阻抗之间的较大比率使得布拉格反射镜能够在FBAR和密封剂之间提供足够的声学隔离，用于FBAR装置的频率响应展现轻微的，如果有的话，由FBAR和密封剂之间的不良声耦合产生的伪像。

9. 发明授权

US07091649B2 Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements 有权
标题翻译：具有两个反向c轴压电元件的薄膜声耦合变压器
公开(公告)号：US07091649B2
公开(公告)日：2006-08-15
申请号：US10836663
申请日：2004-04-29
申请人： John D. Larson, III , Yury Oshmyansky
发明人： John D. Larson, III , Yury Oshmyansky
IPC分类号： H01L41/08
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
摘要翻译：声耦合变压器的实施例具有第一层叠体声波谐振器（SBAR）和第二SBAR。每个SBAR具有较低的膜体声波谐振器（FBAR）和上部FBAR，以及FBAR之间的声学解耦器。上部FBAR堆叠在较低FBAR的顶部。每个FBAR具有相对的平面电极和电极之间的压电元件。压电元件的特征在于c轴。下FBAR的压电元件的c轴方向相反，上FBAR的压电元件的c轴方向相反。变压器还具有将第一SBAR的下FBAR连接到第二SBAR的下FBAR的第一电路和将第一SBAR的上FBAR连接到第二SBAR的上FBAR的第二电路。

10. 发明授权

US06714102B2 Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method 有权
标题翻译：制造薄膜体声共振器（FBAR）的方法和体现该方法的FBAR结构
公开(公告)号：US06714102B2
公开(公告)日：2004-03-30
申请号：US09798496
申请日：2001-03-01
申请人： Richard C. Ruby , Paul Bradley , Yury Oshmyansky , Domingo A. Figueredo
发明人： Richard C. Ruby , Paul Bradley , Yury Oshmyansky , Domingo A. Figueredo
IPC分类号： H03H900
CPC分类号： H03H3/02
摘要： A method for fabricating an acoustic resonator, for example a Thin Film Bulk Acoustic Resonators (FBAR), on a substrate. A depression is etched and filled with sacrificial material. The FBAR is fabricated on the substrate spanning the depression, the FBAR having an etch hole. The depression may include etch channels in which case the FBAR may include etch holes aligned with the etch channels. A resonator resulting from the application of the technique is suspended in air and includes at least one etch hole and may include etch channels.
摘要翻译：一种用于在衬底上制造声共振器的方法，例如薄膜体声波谐振器（FBAR）。蚀刻凹陷并填充牺牲材料。 FBAR制造在跨越凹陷的衬底上，FBAR具有蚀刻孔。凹陷可以包括蚀刻通道，在这种情况下，FBAR可以包括与蚀刻通道对准的蚀刻孔。由施加该技术产生的共振器悬浮在空气中并且包括至少一个蚀刻孔，并且可以包括蚀刻通道。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式