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1. 发明申请

US20110138343A1 Pattern Transfer Modeling for Optical Lithographic Processes 审中-公开
标题翻译：光学平版印刷工艺的图案转移建模
公开(公告)号：US20110138343A1
公开(公告)日：2011-06-09
申请号：US12710353
申请日：2010-02-22
申请人： Yuri Granik
发明人： Yuri Granik
IPC分类号： G06F17/50
CPC分类号： G03F7/70625 , G03F7/705
摘要： Various implementations of the invention provide for the optimization of etch induced pattern transfer across a significant portion of a design. In various implementations, an entire design, that is a “full-chip” may be optimized. With some implementations, the invention may be employed to detect etch hotspots. Further implementations may be employed in either or both a mask data preparation process (“MDP”) or to determine the etch effects of including various patterns in a design.
摘要翻译：本发明的各种实施方案提供跨越设计的重要部分的蚀刻诱导图案转移的优化。在各种实现中，可以优化整个设计，即“全芯片”。通过一些实现方式，可以采用本发明来检测蚀刻热点。掩模数据准备过程（“MDP”）中的一个或两者可以采用进一步的实施方式，或者确定在设计中包括各种图案的蚀刻效果。

2. 发明授权

US07623220B2 Source optimization for image fidelity and throughput 有权
标题翻译：源图像保真度和吞吐量优化
公开(公告)号：US07623220B2
公开(公告)日：2009-11-24
申请号：US11824558
申请日：2007-06-28
申请人： Yuri Granik
发明人： Yuri Granik
IPC分类号： G03B27/54 , G03B27/58 , G03B27/72 , G03B27/32
CPC分类号： G03F7/70491 , G03F7/70108 , G03F7/70441 , G03F7/705
摘要： A system and method for optimizing an illumination source to print a desired pattern of features dividing a light source into pixels and determining an optimum intensity for each pixel such that when the pixels are simultaneously illuminated, the error in a printed pattern of features is minimized. In one embodiment, pixel solutions are constrained from solutions that are bright, continuous, and smooth. In another embodiment, the light source optimization and resolution enhancement technique(s) are iteratively performed to minimize errors in a printed pattern of features.
摘要翻译：一种用于优化照明源以打印将光源分成像素并且为每个像素确定最佳强度的特征的特征图案的系统和方法，使得当像素同时被照亮时，特征的印刷图案中的误差被最小化。在一个实施例中，像素解决方案受限于明亮，连续和平滑的解决方案。在另一个实施例中，迭代地执行光源优化和分辨率增强技术以最小化特征的打印图案中的错误。

3. 发明申请

US20070124708A1 CONTRAST BASED RESOLUTION ENHANCEMENT FOR PHOTOLITHOGRAPHIC PROCESSING 有权
标题翻译：基于对比度的分辨率增强图像处理
公开(公告)号：US20070124708A1
公开(公告)日：2007-05-31
申请号：US11669100
申请日：2007-01-30
申请人： Juan Torres Robles , Yuri Granik
发明人： Juan Torres Robles , Yuri Granik
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/36 , G06F2217/12 , Y02P90/265
摘要： A contrast-based resolution enhancing technology (RET) determines a distribution of contrast values for edge fragments in a design layout or portion thereof. Resolution enhancement is applied to the edge fragments in a way that increases the number of edge fragments having a contrast value that exceeds a predetermined threshold.
摘要翻译：基于对比度的分辨率增强技术（RET）确定设计布局或其部分中边缘片段的对比度值的分布。以增加具有超过预定阈值的对比度值的边缘片段的数量的方式对边缘片段应用分辨率增强。

4. 发明申请

US20060200790A1 Model-based SRAF insertion 有权
标题翻译：基于模型的SRAF插入
公开(公告)号：US20060200790A1
公开(公告)日：2006-09-07
申请号：US11241732
申请日：2005-09-30
申请人： Shumay Shang , Lisa Swallow , Yuri Granik
发明人： Shumay Shang , Lisa Swallow , Yuri Granik
IPC分类号： G06F17/50
CPC分类号： G03F1/64 , G03F1/36
摘要： A system for producing mask layout data retrieves target layout data defining a pattern of features, or portion thereof and an optimized mask layout pattern that includes a number of printing and non-printing features. Mask layout data for one or more subresolution assist features (SRAFs) is then defined to approximate one or more non-printing features of the optimized mask layout pattern.
摘要翻译：用于产生掩模布局数据的系统检索定义特征图案或其一部分的图案的目标布局数据以及包括多个打印和非打印特征的优化的掩模布局图案。然后定义一个或多个子分解辅助特征（SRAF）的掩模布局数据以近似优化的掩模布局图案的一个或多个非打印特征。

5. 发明授权

US08464185B2 Electron beam simulation corner correction for optical lithography 有权
标题翻译：用于光学光刻的电子束模拟角修正
公开(公告)号：US08464185B2
公开(公告)日：2013-06-11
申请号：US12625466
申请日：2009-11-24
申请人： Yuri Granik
发明人： Yuri Granik
IPC分类号： G06F17/50
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/36 , G03F1/78
摘要： Methods for approximating simulated contours are provided herein. With some implementations, a function that incorporates a Gaussian proximity kernel to approximate the electron beam exposure effects is used to simulate a printed image. Subsequently, one or more corners of the simulated printed image may be approximated by two or more straight edges. In various implementations, the number of straight edges used to approximate the corner as well as the orientation of the one or more straight edges is determined based upon the characteristics of the corner, such as, the corner having an obtuse angle larger than 135 degrees for example. With various implementations, two straight edges are used to approximate the corner, the orientation of the two straight edges being determined by a first point, a second point, and a shared corner point.
摘要翻译：本文提供了近似模拟轮廓的方法。通过一些实施方式，使用包含高斯邻近内核以近似电子束曝光效果的函数来模拟打印图像。随后，模拟印刷图像的一个或多个角可以由两个或更多个直边近似。在各种实施方式中，用于近似拐角的直边的数量以及一个或多个直边的取向基于拐角的特征来确定，例如，角为大于135度的角为大于135度的角例。通过各种实施方式，使用两个直边来近似拐角，两个直边的方向由第一点，第二点和共同角点确定。

6. 发明申请

US20100269086A1 Electron Beam Simulation Corner Correction For Optical Lithpography 有权
标题翻译：电子束模拟角修正光学Lithpography
公开(公告)号：US20100269086A1
公开(公告)日：2010-10-21
申请号：US12625466
申请日：2009-11-24
申请人： Yuri Granik
发明人： Yuri Granik
IPC分类号： G06F17/50
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/36 , G03F1/78
摘要： Methods for approximating simulated contours are provided herein. With some implementations, a function that incorporates a Gaussian proximity kernel to approximate the electron beam exposure effects is used to simulate a printed image. Subsequently, one or more corners of the simulated printed image may be approximated by two or more straight edges. In various implementations, the number of straight edges used to approximate the corner as well as the orientation of the one or more straight edges is determined based upon the characteristics of the corner, such as, the corner having an obtuse angle larger than 135 degrees for example. With various implementations, two straight edges are used to approximate the corner, the orientation of the two straight edges being determined by a first point, a second point, and a shared corner point.
摘要翻译：本文提供了近似模拟轮廓的方法。通过一些实施方式，使用包含高斯邻近内核以近似电子束曝光效果的函数来模拟打印图像。随后，模拟印刷图像的一个或多个角可以由两个或更多个直边近似。在各种实施方式中，用于近似拐角的直边的数量以及一个或多个直边的取向基于拐角的特征来确定，例如，角为大于135度的角为大于135度的角例。通过各种实施方式，使用两个直边来近似拐角，两个直边的方向由第一点，第二点和共同角点确定。

7. 发明授权

US07805699B2 Shape-based photolithographic model calibration 有权
标题翻译：基于形状的光刻模型校准
公开(公告)号：US07805699B2
公开(公告)日：2010-09-28
申请号：US11974499
申请日：2007-10-11
申请人： Ir Kusnadi , Yuri Granik
发明人： Ir Kusnadi , Yuri Granik
IPC分类号： G06F17/50
CPC分类号： G03F7/70616 , G03F7/705
摘要： A method and apparatus for determining how well a photolithographic model simulates a photolithographic printing process. A test pattern of features is printed on a wafer and the shape of the printed features is compared with the shape of simulated features produced by the model. A cost function is calculated from the comparison that quantifies how well the model simulates the photolithographic printing process.
摘要翻译：一种用于确定光刻模型如何模拟光刻印刷工艺的方法和装置。将特征的测试图案印刷在晶片上，并将印刷特征的形状与由模型产生的模拟特征的形状进行比较。通过比较来计算成本函数，其量化了模拟光刻印刷过程的良好程度。

8. 发明授权

US07562336B2 Contrast based resolution enhancement for photolithographic processing 有权
标题翻译：用于光刻处理的对比度分辨率增强
公开(公告)号：US07562336B2
公开(公告)日：2009-07-14
申请号：US11669100
申请日：2007-01-30
申请人： Juan Andres Torres Robles , Yuri Granik
发明人： Juan Andres Torres Robles , Yuri Granik
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/36 , G06F2217/12 , Y02P90/265
摘要： A contrast-based resolution enhancing technology (RET) determines a distribution of contrast values for edge fragments in a design layout or portion thereof. Resolution enhancement is applied to the edge fragments in a way that increases the number of edge fragments having a contrast value that exceeds a predetermined threshold.
摘要翻译：基于对比度的分辨率增强技术（RET）确定设计布局或其部分中边缘片段的对比度值的分布。以增加具有超过预定阈值的对比度值的边缘片段的数量的方式对边缘片段应用分辨率增强。

9. 发明申请

US20050168498A1 Source optimization for image fidelity and throughput 有权
标题翻译：源图像保真度和吞吐量优化
公开(公告)号：US20050168498A1
公开(公告)日：2005-08-04
申请号：US11041459
申请日：2005-01-21
申请人： Yuri Granik
发明人： Yuri Granik
IPC分类号： G03F7/20 , G09G5/02 , G09G5/00
CPC分类号： G03F7/70491 , G03F7/70108 , G03F7/70441 , G03F7/705
摘要： A system and method for optimizing an illumination source to print a desired pattern of features dividing a light source into pixels and determining an optimum intensity for each pixel such that when the pixels are simultaneously illuminated, the error in a printed pattern of features is minimized. In one embodiment, pixel solutions are constrained from solutions that are bright, continuous, and smooth. In another embodiment, the light source optimization and resolution enhancement technique(s) are iteratively performed to minimize errors in a printed pattern of features.
摘要翻译：一种用于优化照明源以打印将光源分成像素并且为每个像素确定最佳强度的特征的特征图案的系统和方法，使得当像素同时被照亮时，特征的印刷图案中的误差被最小化。在一个实施例中，像素解决方案受限于明亮，连续和平滑的解决方案。在另一个实施例中，迭代地执行光源优化和分辨率增强技术以最小化特征的打印图案中的错误。

10. 发明授权

US06643616B1 Integrated device structure prediction based on model curvature 有权
标题翻译：基于模型曲率的集成器件结构预测
公开(公告)号：US06643616B1
公开(公告)日：2003-11-04
申请号：US09457410
申请日：1999-12-07
申请人： Yuri Granik , Nicolas Bailey Cobb , Franklin Mark Schellenberg
发明人： Yuri Granik , Nicolas Bailey Cobb , Franklin Mark Schellenberg
IPC分类号： G06F1750
CPC分类号： G03F7/70441 , G03F1/36
摘要： Methods and apparatuses for structure prediction based on model curvature are described. A simulation result corresponding to an integrated circuit or other structure is generated. The result includes contour data representing a feature value, for example, height (or intensity) of the structure at various points. Three or more points are used to determine a curvature of the result at a predetermined location. The curvature information can be used to determine boundaries of the structure. For example, when used with an integrated circuit layout, the curvature can be used for optical and process correction (OPC) purposes to modify an integrated circuit layout such that the resulting integrated circuit more closely resembles the designed integrated circuit than would otherwise be possible. In one embodiment, both slope and curvature of the integrated circuit structure are used for OPC purposes.
摘要翻译：描述了基于模型曲率的结构预测方法和装置。产生与集成电路或其他结构对应的模拟结果。结果包括表示特征值的轮廓数据，例如在各个点处的结构的高度（或强度）。使用三个或更多个点来确定在预定位置处的结果的曲率。曲率信息可用于确定结构的边界。例如，当与集成电路布局一起使用时，曲率可以用于光学和过程校正（OPC）目的，以修改集成电路布局，使得所得到的集成电路与设计的集成电路非常类似于否则可能的。在一个实施例中，集成电路结构的斜率和曲率都用于OPC目的。

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