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1. 发明申请

US20120171792A1 METHOD OF FABRICATING A PIXEL ARRAY 有权
标题翻译：制作像素阵列的方法
公开(公告)号：US20120171792A1
公开(公告)日：2012-07-05
申请号：US13050956
申请日：2011-03-18
申请人： Yung-Hui Yeh , Chih-Ming Lai , Chun-Cheng Cheng
发明人： Yung-Hui Yeh , Chih-Ming Lai , Chun-Cheng Cheng
IPC分类号： H01L33/02
CPC分类号： H01L27/1225 , H01L27/3262 , H01L2251/5338
摘要： A method of fabricating a pixel array is provided. A first metal layer is formed over a substrate. The metal layer is patterned to form a plurality of data lines and a plurality of drain patterns adjacent to each data line. The data lines and the drain patterns are separated from each other. An oxide semiconductor layer and a first insulation layer covering the oxide semiconductor layer are formed over the substrate. A second metal layer is formed on the first insulation layer and patterned to form a plurality of scan lines intersected with the data lines and the drain patterns. By using the scan lines as a mask, the oxide semiconductor layer and the first insulation layer are patterned to form a plurality of oxide semiconductor channels located under each scan line. Each oxide semiconductor channel is located between one data line and one drain pattern.
摘要翻译：提供了一种制造像素阵列的方法。第一金属层形成在衬底上。图案化金属层以形成与每条数据线相邻的多条数据线和多条漏极图案。数据线和漏极图案彼此分离。在基板上形成氧化物半导体层和覆盖氧化物半导体层的第一绝缘层。第二金属层形成在第一绝缘层上并被图案化以形成与数据线和漏极图案相交的多条扫描线。通过使用扫描线作为掩模，对氧化物半导体层和第一绝缘层进行图案化以形成位于每条扫描线下方的多个氧化物半导体通道。每个氧化物半导体沟道位于一个数据线和一个漏极图案之间。

2. 发明申请

US20100148168A1 INTEGRATED CIRCUIT STRUCTURE 审中-公开
标题翻译：集成电路结构
公开(公告)号：US20100148168A1
公开(公告)日：2010-06-17
申请号：US12494304
申请日：2009-06-30
申请人： Chih-Ming Lai , Chun-Cheng Cheng , Yung-Hui Yeh
发明人： Chih-Ming Lai , Chun-Cheng Cheng , Yung-Hui Yeh
IPC分类号： H01L29/24
CPC分类号： H01L29/45 , H01L27/1225 , H01L27/1233 , H01L27/1251
摘要： An integrated circuit structure including a substrate, an insulating layer, a first transistor and a second transistor is provided. The insulating layer, the first transistor and the second transistor are disposed on the substrate. The first transistor includes a first gate, a first oxide semiconductor layer, a first source and a first drain. A portion of the first source and the first drain directly contacting the first oxide semiconductor layer is composed of a Ti-containing metal. The second transistor includes a second gate, a second oxide semiconductor layer, a second source and a second drain. A portion of the second source and the second drain directly contacting the second oxide semiconductor layer is composed of a none-Ti-containing metal. In addition, the first oxide semiconductor layer and the second oxide semiconductor layer may have different thickness or different carrier concentrations.
摘要翻译：提供了包括基板，绝缘层，第一晶体管和第二晶体管的集成电路结构。绝缘层，第一晶体管和第二晶体管设置在基板上。第一晶体管包括第一栅极，第一氧化物半导体层，第一源极和第一漏极。与第一氧化物半导体层直接接触的第一源极和第一漏极的一部分由含钛金属构成。第二晶体管包括第二栅极，第二氧化物半导体层，第二源极和第二漏极。与第二氧化物半导体层直接接触的第二源极和第二漏极的一部分由不含Ti的金属构成。此外，第一氧化物半导体层和第二氧化物半导体层可以具有不同的厚度或不同的载流子浓度。

3. 发明授权

US08263433B2 Method of fabricating an active device array and fabricating an organic light emitting diode array 有权
标题翻译：制造有源器件阵列并制造有机发光二极管阵列的方法
公开(公告)号：US08263433B2
公开(公告)日：2012-09-11
申请号：US13050951
申请日：2011-03-18
申请人： Yung-Hui Yeh , Chih-Ming Lai , Chun-Cheng Cheng
发明人： Yung-Hui Yeh , Chih-Ming Lai , Chun-Cheng Cheng
IPC分类号： H01L21/00
CPC分类号： H01L27/1225 , H01L27/1251 , H01L27/3258
摘要： Methods of fabricating active device array and organic light emitting diode array are provided. A first pattern metal layer is formed over a substrate. An oxide semiconductor layer is formed entirely over the substrate. A first insulation layer covering the first patterned metal layer and the oxide semiconductor layer is formed entirely on the substrate. A second patterned metal layer is formed on the first insulation layer. The oxide semiconductor layer and the first insulation layer is patterned by using the second patterned metal layer as a mask to form a first patterned oxide semiconductor layer and a first patterned insulation layer. A second insulation layer is entirely formed on the substrate. A second patterned oxide semiconductor layer is formed over the second insulation layer. A third patterned metal layer is formed over the second insulation layer.
摘要翻译：提供制造有源器件阵列和有机发光二极管阵列的方法。第一图案金属层形成在衬底上。整个衬底上形成氧化物半导体层。覆盖第一图案化金属层和氧化物半导体层的第一绝缘层整体形成在基板上。在第一绝缘层上形成第二图案化金属层。通过使用第二图案化金属层作为掩模来将氧化物半导体层和第一绝缘层图案化，以形成第一图案化氧化物半导体层和第一图案化绝缘层。在基板上完全形成第二绝缘层。第二图案化氧化物半导体层形成在第二绝缘层上。第三图案化金属层形成在第二绝缘层上。

4. 发明授权

US08257992B2 Method of fabricating a pixel array 有权
标题翻译：制造像素阵列的方法
公开(公告)号：US08257992B2
公开(公告)日：2012-09-04
申请号：US13050956
申请日：2011-03-18
申请人： Yung-Hui Yeh , Chih-Ming Lai , Chun-Cheng Cheng
发明人： Yung-Hui Yeh , Chih-Ming Lai , Chun-Cheng Cheng
IPC分类号： H01L21/00
CPC分类号： H01L27/1225 , H01L27/3262 , H01L2251/5338
摘要： A method of fabricating a pixel array is provided. A first metal layer is formed over a substrate. The metal layer is patterned to form a plurality of data lines and a plurality of drain patterns adjacent to each data line. The data lines and the drain patterns are separated from each other. An oxide semiconductor layer and a first insulation layer covering the oxide semiconductor layer are formed over the substrate. A second metal layer is formed on the first insulation layer and patterned to form a plurality of scan lines intersected with the data lines and the drain patterns. By using the scan lines as a mask, the oxide semiconductor layer and the first insulation layer are patterned to form a plurality of oxide semiconductor channels located under each scan line. Each oxide semiconductor channel is located between one data line and one drain pattern.
摘要翻译：提供了一种制造像素阵列的方法。第一金属层形成在衬底上。图案化金属层以形成与每条数据线相邻的多条数据线和多条漏极图案。数据线和漏极图案彼此分离。在基板上形成氧化物半导体层和覆盖氧化物半导体层的第一绝缘层。第二金属层形成在第一绝缘层上并被图案化以形成与数据线和漏极图案相交的多条扫描线。通过使用扫描线作为掩模，对氧化物半导体层和第一绝缘层进行图案化以形成位于每条扫描线下方的多个氧化物半导体通道。每个氧化物半导体沟道位于一个数据线和一个漏极图案之间。

5. 发明申请

US20120164766A1 METHOD OF FABRICATING AN ACTIVE DEVICE ARRAY AND FABRICATING AN ORGANIC LIGHT EMITTING DIODE ARRAY 有权
标题翻译：制造有源器件阵列和制造有机发光二极管阵列的方法
公开(公告)号：US20120164766A1
公开(公告)日：2012-06-28
申请号：US13050951
申请日：2011-03-18
申请人： Yung-Hui Yeh , Chih-Ming Lai , Chun-Cheng Cheng
发明人： Yung-Hui Yeh , Chih-Ming Lai , Chun-Cheng Cheng
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/1251 , H01L27/3258
摘要： Methods of fabricating active device array and organic light emitting diode array are provided. A first pattern metal layer is formed over a substrate. An oxide semiconductor layer is formed entirely over the substrate. A first insulation layer covering the first patterned metal layer and the oxide semiconductor layer is formed entirely on the substrate. A second patterned metal layer is formed on the first insulation layer. The oxide semiconductor layer and the first insulation layer is patterned by using the second patterned metal layer as a mask to form a first patterned oxide semiconductor layer and a first patterned insulation layer. A second insulation layer is entirely formed on the substrate. A second patterned oxide semiconductor layer is formed over the second insulation layer. A third patterned metal layer is formed over the second insulation layer.
摘要翻译：提供制造有源器件阵列和有机发光二极管阵列的方法。第一图案金属层形成在衬底上。整个衬底上形成氧化物半导体层。覆盖第一图案化金属层和氧化物半导体层的第一绝缘层整体形成在基板上。第二图案化金属层形成在第一绝缘层上。通过使用第二图案化金属层作为掩模来将氧化物半导体层和第一绝缘层图案化，以形成第一图案化氧化物半导体层和第一图案化绝缘层。在基板上完全形成第二绝缘层。第二图案化氧化物半导体层形成在第二绝缘层上。第三图案化金属层形成在第二绝缘层上。

6. 发明申请

US20070188062A1 Structures and methods for improving image quality of organic light emitting diodes integrated with color filters 审中-公开
标题翻译：与彩色滤光片集成的有机发光二极管的图像质量的结构和方法
公开(公告)号：US20070188062A1
公开(公告)日：2007-08-16
申请号：US11511463
申请日：2006-08-29
申请人： Chun-Cheng Cheng , Yu-Jung Liu , Yung-Hui Yeh
发明人： Chun-Cheng Cheng , Yu-Jung Liu , Yung-Hui Yeh
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L27/322 , H01L27/3244
摘要： Structures and methods for improving image quality of organic light emitting diode integrated with color filters, the structures and methods mainly utilize a planarization layer to be coated on the color filter or to substitute for a passivation layer, or utilize a planarization layer to be coated on the color filter and utilize another planarization layer to substitute for a passivation layer to effectively reduce surface roughness of pixel electrode, therefore manufacturing yield and image quality of the organic light emitting diode are improved.
摘要翻译：与彩色滤光片集成的有机发光二极管的图像质量改善的结构和方法主要是利用平坦化层涂覆在滤色器上或代替钝化层，或者利用平坦化层涂覆彩色滤光片并利用另一平面化层代替钝化层，有效降低像素电极的表面粗糙度，从而提高了有机发光二极管的制造成品率和图像质量。

7. 发明申请

US20130059118A1 FLEXIBLE SUBSTRATE STRUCTURE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：柔性基板结构及其制造方法
公开(公告)号：US20130059118A1
公开(公告)日：2013-03-07
申请号：US13306949
申请日：2011-11-29
申请人： Yung-Hui Yeh , Chun-Cheng Cheng , Chyi-Ming Leu , Yung-Lung Tseng
发明人： Yung-Hui Yeh , Chun-Cheng Cheng , Chyi-Ming Leu , Yung-Lung Tseng
IPC分类号： B32B3/00 , B32B37/12 , B32B38/10 , B32B37/14
CPC分类号： H01L29/78603 , H01L27/1218 , Y10T156/10 , Y10T156/1052 , Y10T428/24355
摘要： A flexible substrate structure including a flexible metal carrier, a surface-modified layer and a flexible plastic substrate is provided. The flexible metal carrier includes a first region and a second region. The surface-modified layer is located on and contacts with the first region of the flexible metal carrier. The flexible plastic substrate is located over the first region and the second region. The flexible plastic substrate over the first region contacts with the surface-modified layer. The flexible plastic substrate over the second region contacts with the flexible metal carrier.
摘要翻译：提供了包括柔性金属载体，表面改性层和柔性塑料基底的柔性基底结构。柔性金属载体包括第一区域和第二区域。表面改性层位于柔性金属载体的第一区域上并与其接触。柔性塑料基板位于第一区域和第二区域之上。第一区域上的柔性塑料基板与表面改性层接触。第二区域上的柔性塑料基板与柔性金属载体接触。

8. 发明申请

US20130059081A1 METHOD OF FABRICATING FLEXIBLE SUBSTRATE STRUCTURE 审中-公开
标题翻译：制造柔性基板结构的方法
公开(公告)号：US20130059081A1
公开(公告)日：2013-03-07
申请号：US13600220
申请日：2012-08-31
申请人： Yung-Hui Yeh , Chun-Cheng Cheng , Chyi-Ming Leu , Yung-Lung Tseng
发明人： Yung-Hui Yeh , Chun-Cheng Cheng , Chyi-Ming Leu , Yung-Lung Tseng
IPC分类号： B05D5/00 , B05D3/12
CPC分类号： H01L29/78603 , H01L27/1218 , Y10T156/10 , Y10T156/1052 , Y10T428/24355
摘要： A method of fabricating a flexible substrate structure is provided. A flexible metal carrier including at least one first region and at least one second region is provided. A surface-modified layer is formed on the first region of the flexible metal carrier. A flexible plastic substrate is formed over the first region and the second region of the flexible metal carrier. The flexible plastic substrate over the first region contacts with the surface-modified layer. The flexible plastic substrate over the second region contacts with the flexible metal carrier.
摘要翻译：提供一种制造柔性基板结构的方法。提供了包括至少一个第一区域和至少一个第二区域的柔性金属载体。在柔性金属载体的第一区域上形成表面改性层。在柔性金属载体的第一区域和第二区域上形成柔性塑料基板。第一区域上的柔性塑料基板与表面改性层接触。第二区域上的柔性塑料基板与柔性金属载体接触。

9. 发明授权

US08053836B2 Oxide semiconductor thin-film transistor 有权
标题翻译：氧化物半导体薄膜晶体管
公开(公告)号：US08053836B2
公开(公告)日：2011-11-08
申请号：US12475711
申请日：2009-06-01
申请人： Yung-Hui Yeh , Chun-Cheng Cheng , Jian-Jang Huang , Shih-Hua Hsiao , Kuang-Chung Liu
发明人： Yung-Hui Yeh , Chun-Cheng Cheng , Jian-Jang Huang , Shih-Hua Hsiao , Kuang-Chung Liu
IPC分类号： H04L29/02
CPC分类号： H01L29/7869 , H01L29/78609 , H01L29/78696
摘要： An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer.
摘要翻译：一种氧化物半导体薄膜晶体管，包括：在基板上形成的源电极和漏电极; 形成在所述源电极和所述漏电极之间的复合半导体有源层; 形成在源电极上的栅介电层，复合半导体有源层和漏电极; 以及形成在所述栅极电介质层上并对应于所述复合半导体有源层的栅电极; 其中所述复合半导体有源层包括低载流子浓度第一氧化物半导体层和高载流子浓度第二氧化物半导体层。

10. 外观设计

USD551329S1 Air purifier 有权
公开(公告)号：USD551329S1
公开(公告)日：2007-09-18
申请号：US29266969
申请日：2006-10-03
申请人： Chun-Cheng Cheng
设计人： Chun-Cheng Cheng

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