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    • 4. 发明申请
    • Nano-liquid crystal on silicon (LCOS) chip having reduced noise
    • 具有降低噪声的硅纳米液晶(LCOS)芯片
    • US20070046885A1
    • 2007-03-01
    • US11504915
    • 2006-08-15
    • Gihong KimTae Chun
    • Gihong KimTae Chun
    • G02F1/1339
    • G02F1/136277G02F1/136204G02F1/136213G02F2001/136218
    • An LCoS chip designed to suppress electrical noise due to cross-talk between electrical components of the chip and stray light entered into the chip. The LCoS chip includes a silicon substrate having an array of memory cells formed thereon. The chip includes the first polycrystalline silicon layer that forms word lines and a metal layer that forms bit lines, wherein the bit lines are directed orthogonal to the word lines. The chip also includes capacitor storages formed of the second and third second polycrystalline silicon layers. The second polycrystalline layer is disposed over the first polycrystalline silicon layer and over regions of the substrate not covered by the word lines. The metal layer includes shields to reduce cross-talk between neighboring bit lines as well as between the bit lines and capacitor storages. The third polycrystalline layer is configured to reduce cross-talk between the bit lines and word lines.
    • LCoS芯片设计用于抑制芯片电气部件之间的串扰与进入芯片的杂散光之间的电噪声。 LCoS芯片包括具有形成在其上的存储单元阵列的硅衬底。 芯片包括形成字线的第一多晶硅层和形成位线的金属层,其中位线与字线正交。 芯片还包括由第二和第三第二多晶硅层形成的电容器存储器。 所述第二多晶层设置在所述第一多晶硅层之上以及所述衬底的未被所述字线覆盖的区域之上。 金属层包括屏蔽,以减少相邻位线之间以及位线和电容器存储之间的串扰。 第三多晶层被配置为减少位线和字线之间的串扰。