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1. 发明授权

US07964427B2 Silicon-based RF system and method of manufacturing the same 有权
标题翻译：硅基RF系统及其制造方法
公开(公告)号：US07964427B2
公开(公告)日：2011-06-21
申请号：US12759648
申请日：2010-04-13
申请人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
发明人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
IPC分类号： H01L21/00
CPC分类号： H01L25/165 , H01L2924/0002 , H01L2924/09701 , H03H9/1057 , H01L2924/00
摘要： A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
摘要翻译：一种RF系统，包括形成有填充有导电材料的至少一个通孔的硅衬底，使得硅衬底的两侧彼此电连接; 形成在所述硅衬底的一侧上的至少一个平面器件; 以及形成在硅衬底的另一侧上的至少一个RF MEMS器件。

2. 发明授权

US07723809B2 Silicon-based RF system and method of manufacturing the same 有权
标题翻译：硅基RF系统及其制造方法
公开(公告)号：US07723809B2
公开(公告)日：2010-05-25
申请号：US11342564
申请日：2006-01-31
申请人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
发明人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
IPC分类号： H01L29/78
CPC分类号： H01L25/165 , H01L2924/0002 , H01L2924/09701 , H03H9/1057 , H01L2924/00
摘要： A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
摘要翻译：一种RF系统，包括形成有填充有导电材料的至少一个通孔的硅衬底，使得硅衬底的两侧彼此电连接; 形成在所述硅衬底的一侧上的至少一个平面器件; 以及形成在硅衬底的另一侧上的至少一个RF MEMS器件。

3. 发明申请

US20060180897A1 Silicon-based RF system and method of manufacturing the same 有权
标题翻译：硅基RF系统及其制造方法
公开(公告)号：US20060180897A1
公开(公告)日：2006-08-17
申请号：US11342564
申请日：2006-01-31
申请人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
发明人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
IPC分类号： H01L29/06 , H01L21/30
CPC分类号： H01L25/165 , H01L2924/0002 , H01L2924/09701 , H03H9/1057 , H01L2924/00
摘要： A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
摘要翻译：一种RF系统，包括形成有填充有导电材料的至少一个通孔的硅衬底，使得硅衬底的两侧彼此电连接; 形成在所述硅衬底的一侧上的至少一个平面器件; 以及形成在硅衬底的另一侧上的至少一个RF MEMS器件。

4. 发明授权

US07619289B2 MEMS switch and method for manufacturing the same 失效
标题翻译： MEMS开关及其制造方法
公开(公告)号：US07619289B2
公开(公告)日：2009-11-17
申请号：US11472312
申请日：2006-06-22
申请人： Jong-seok Kim , In-sang Song , Sang-hun Lee , Sang-wook Kwon , Duck-hwan Kim , Yun-kwon Park , Hee-moon Jeong , Young-tack Hong , Che-heung Kim , Seok-chul Yun , Kuang-woo Nam
发明人： Jong-seok Kim , In-sang Song , Sang-hun Lee , Sang-wook Kwon , Duck-hwan Kim , Yun-kwon Park , Hee-moon Jeong , Young-tack Hong , Che-heung Kim , Seok-chul Yun , Kuang-woo Nam
IPC分类号： H01L29/78
CPC分类号： H01H61/02 , H01H61/063 , H01H2061/006
摘要： A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.
摘要翻译： MEMS开关包括在下基板的上表面上具有信号线的下基板; 在其上具有空腔的上基板，与下基板的上表面隔开一段距离，并且在上基板的下表面上具有膜层; 形成在膜层上的上基板的空腔中的双金属层; 形成在所述膜层的下表面上的加热层; 以及形成在所述加热层的下表面上的接触构件。接触构件可以与信号线接触或分离。制造MEMS开关的方法包括制备上基板和下基板并将其组合，使得具有信号线的表面面向具有接触构件的表面，并且上下基板分开一定距离。

5. 发明授权

US07439825B2 Integrated filter including FBAR and saw resonator and fabrication method therefor 有权
标题翻译：集成滤波器，包括FBAR和锯片谐振器及其制造方法
公开(公告)号：US07439825B2
公开(公告)日：2008-10-21
申请号：US11448707
申请日：2006-06-08
申请人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-chul Yun
发明人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-chul Yun
IPC分类号： H03H9/56 , H03H9/54
CPC分类号： H03H9/588 , H03H3/02 , H03H9/02228 , H03H2003/0071
摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.
摘要翻译：一种包括膜体声波谐振器（FBAR）和表面声波（SAW）谐振器的集成滤波器以及一体化滤波器的制造方法。集成滤波器包括：基板; 位于所述基板的上表面上的预定第一区域中的第一电极; 位于所述第一电极上的第一压电层; 位于所述第一压电层上的第二电极; 位于所述基板的上表面上的预定的第二区域中的第二压电层; 和位于第二压电层上的至少一个数字间换能器（IDT）电极。 IDT电极包括：在第二压电层上形成为梳状结构的第一IDT电极; 以及在第二压电层上形成为梳状结构的第二IDT电极，以便与第一IDT电极啮合。第一和第二压电层由相同的材料形成。因此，可以使在各种频带中工作的集成滤波器紧凑。

6. 发明申请

US20070024396A1 Integrated filter including FBAR and saw resonator and fabrication method therefor 有权
标题翻译：集成滤波器，包括FBAR和锯片谐振器及其制造方法
公开(公告)号：US20070024396A1
公开(公告)日：2007-02-01
申请号：US11448707
申请日：2006-06-08
申请人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-Chul Yun
发明人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-Chul Yun
IPC分类号： H03H9/56
CPC分类号： H03H9/588 , H03H3/02 , H03H9/02228 , H03H2003/0071
摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.
摘要翻译：一种包括膜体声波谐振器（FBAR）和表面声波（SAW）谐振器的集成滤波器以及一体化滤波器的制造方法。集成滤波器包括：基板; 位于所述基板的上表面上的预定第一区域中的第一电极; 位于所述第一电极上的第一压电层; 位于所述第一压电层上的第二电极; 位于所述基板的上表面上的预定的第二区域中的第二压电层; 和位于第二压电层上的至少一个数字间换能器（IDT）电极。 IDT电极包括：在第二压电层上形成为梳状结构的第一IDT电极; 以及在第二压电层上形成为梳状结构的第二IDT电极，以便与第一IDT电极啮合。第一和第二压电层由相同的材料形成。因此，可以使在各种频带中工作的集成滤波器紧凑。

7. 发明申请

US20070012654A1 MEMS switch and method for manufacturing the same 失效
标题翻译： MEMS开关及其制造方法
公开(公告)号：US20070012654A1
公开(公告)日：2007-01-18
申请号：US11472312
申请日：2006-06-22
申请人： Jong-seok Kim , In-sang Song , Sang-hun Lee , Sang-wook Kwon , Duck-hwan Kim , Yun-kwon Park , Hee-moon Jeong , Young-tack Hong , Che-heung Kim , Seok-chul Yun , Kuang-woo Nam
发明人： Jong-seok Kim , In-sang Song , Sang-hun Lee , Sang-wook Kwon , Duck-hwan Kim , Yun-kwon Park , Hee-moon Jeong , Young-tack Hong , Che-heung Kim , Seok-chul Yun , Kuang-woo Nam
IPC分类号： C23F1/00 , H01B13/00
CPC分类号： H01H61/02 , H01H61/063 , H01H2061/006
摘要： A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.
摘要翻译： MEMS开关包括在下基板的上表面上具有信号线的下基板; 在其上具有空腔的上基板，与下基板的上表面隔开一段距离，并且在上基板的下表面上具有膜层; 形成在膜层上的上基板的空腔中的双金属层; 形成在所述膜层的下表面上的加热层; 以及形成在所述加热层的下表面上的接触构件。接触构件可以与信号线接触或分离。制造MEMS开关的方法包括制备上基板和下基板并将其组合，使得具有信号线的表面面向具有接触构件的表面，并且上下基板分开一定距离。

8. 发明申请

US20070188049A1 Monolithic RF circuit and method of fabricating the same 审中-公开
标题翻译：单片RF电路及其制造方法
公开(公告)号：US20070188049A1
公开(公告)日：2007-08-16
申请号：US11649824
申请日：2007-01-05
申请人： In-sang Song , Sang-wook Kwon , Chul-soo Kim , Yun-kwon Park
发明人： In-sang Song , Sang-wook Kwon , Chul-soo Kim , Yun-kwon Park
IPC分类号： H01L41/00
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/173
摘要： A monolithic radio frequency (RF) circuit and a method of fabricating the monolithic RF circuit are provided. The monolithic RF circuit includes: a base substrate; a filter part including first and second support layers formed on the base substrate, a first air gap formed between the first and second support layers, a first electrode formed on the second support layer and the first air gap, a first piezoelectric layer formed on the first support layer and the first electrode, and a second electrode formed on the first piezoelectric layer; and a switch part including a third support layer adjacent to the second support layer, a second air gap formed between the second and third support layers, a first switch electrode formed on the second air gap and the third support layer, and a second piezoelectric layer formed on the first switch electrode.
摘要翻译：提供单片射频（RF）电路和制造单片RF电路的方法。单片RF电路包括：基底; 过滤器部分，包括形成在基底基板上的第一和第二支撑层，形成在第一和第二支撑层之间的第一气隙，形成在第二支撑层和第一气隙上的第一电极，形成在第一和第二支撑层上的第一压电层第一支撑层和第一电极，以及形成在第一压电层上的第二电极; 以及开关部分，包括与第二支撑层相邻的第三支撑层，形成在第二和第三支撑层之间的第二气隙，形成在第二气隙和第三支撑层上的第一开关电极和第二压电层形成在第一开关电极上。

9. 发明授权

US07728703B2 RF MEMS switch and method for fabricating the same 失效
标题翻译： RF MEMS开关及其制造方法
公开(公告)号：US07728703B2
公开(公告)日：2010-06-01
申请号：US11396573
申请日：2006-04-04
申请人： Jong-seok Kim , Sang-wook Kwon , Dong-kyun Kim , Che-heung Kim , Sang-hun Lee , Young-tack Houng , Chang-seung Lee , In-sang Song
发明人： Jong-seok Kim , Sang-wook Kwon , Dong-kyun Kim , Che-heung Kim , Sang-hun Lee , Young-tack Houng , Chang-seung Lee , In-sang Song
IPC分类号： H01P1/10 , H01H11/04 , H01H9/00 , H01H57/00
CPC分类号： H01P1/127 , H01H59/0009 , H01H2057/006 , Y10T29/49002 , Y10T29/49016 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155
摘要： An RF MEMS switch and a method for fabricating the same are disclosed, in which the RF MEMS device is down driven at a low voltage using a piezoelectric effect. The RF MEMS switch includes a substrate provided with RF signal lines and a cavity, a cantilever positioned on the cavity, having one end fixed to the substrate, and a contact pad connecting the RF signal lines with the cantilever in contact with the RF signal lines when the cantilever is down driven.
摘要翻译：公开了一种RF MEMS开关及其制造方法，其中使用压电效应将RF MEMS器件以低电压下降驱动。 RF MEMS开关包括设置有RF信号线和空腔的基板，位于空腔上的悬臂，其一端固定到基板，以及将RF信号线与与RF信号线接触的悬臂连接的接触垫当悬臂下降驱动时。

10. 发明授权

US07649672B2 MEMS structure and method of fabricating the same 有权
标题翻译： MEMS结构及其制造方法
公开(公告)号：US07649672B2
公开(公告)日：2010-01-19
申请号：US11582964
申请日：2006-10-19
申请人： Young-tack Hong , Jong-seok Kim , In-sang Song , Sang-wook Kwon , Seung-jin Oh , Eun-sung Lee , Seung-tae Choi
发明人： Young-tack Hong , Jong-seok Kim , In-sang Song , Sang-wook Kwon , Seung-jin Oh , Eun-sung Lee , Seung-tae Choi
IPC分类号： G02B26/00
CPC分类号： G02B26/0841 , B81B2201/016 , B81C1/00571 , H01H1/0036 , H01H1/58 , H01H59/0009 , H01H2001/0052
摘要： A MEMS structure includes an element substrate, an electrode pad formed on the element substrate, a MEMS activated element formed on the element substrate, and having an electrode-connecting layer, and a connecting line to electrically connect the electrode pad and the electrode-connecting layer.
摘要翻译： MEMS结构包括元件基板，形成在元件基板上的电极焊盘，形成在元件基板上的MEMS激活元件，并具有电极连接层，以及连接线，用于将电极焊盘和电极连接层。

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