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1. 发明授权

US07219412B2 Methods of forming titanium-containing superconducting compositions 失效
标题翻译：形成含钛超导组合物的方法
公开(公告)号：US07219412B2
公开(公告)日：2007-05-22
申请号：US10860342
申请日：2004-06-02
申请人： Yun Xu , Stephen P. Turner , Mathew S. Cooper , Wei Guo , David B. Love , Edward Cawley
发明人： Yun Xu , Stephen P. Turner , Mathew S. Cooper , Wei Guo , David B. Love , Edward Cawley
IPC分类号： H01L39/24
CPC分类号： H01L39/12 , C22B34/1295 , H01L39/2406 , Y10S420/901 , Y10S505/805 , Y10T29/49014
摘要： The invention includes superconducting titanium-containing compositions having less than 200 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen. The invention also includes methods of forming superconducting titanium-containing superconducting compositions containing less than 100 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen.
摘要翻译：本发明包括超导含钛组合物，其具有小于200ppm重量的选自氮，氧，碳和氢的间隙材料的总和。本发明还包括形成超导含钛超导组合物的方法，所述超导含钛超导组合物含有选自氮，氧，碳和氢的间隙材料的总和小于100ppm重量。

2. 发明授权

US06585866B2 High purity cobalt sputter target and process of manufacturing the same 失效
标题翻译：高纯钴溅射靶及其制造工艺相同
公开(公告)号：US06585866B2
公开(公告)日：2003-07-01
申请号：US10104582
申请日：2002-03-21
申请人： Robert S. Cole , Mathew S. Cooper , Stephen P. Turner , Yinshi Liu , Michael McCarty , Rodney L. Scagline
发明人： Robert S. Cole , Mathew S. Cooper , Stephen P. Turner , Yinshi Liu , Michael McCarty , Rodney L. Scagline
IPC分类号： C22C1907
CPC分类号： C22C19/07 , C22F1/10 , C23C14/3414
摘要： A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 4221C). Annealing the material, at a temperature in the range 300-4221C for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-351 from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.
摘要翻译：公开了一种高纯度钴溅射靶，其包含面心立方（fcc）相和六方密堆积（hcp）相，其中X射线衍射峰强度Ifcc（200）/ Ihcp（10 1）小于通过从熔融的高温将fcc钴冷却至室温而获得的高纯度钴材料的相同比例的值。高纯度钴被定义为氧含量不大于500ppm，Ni含量不超过200ppm，Fe，Al和Cr含量不大于50ppm，Na和K小于0.5 ppm。所公开的溅射靶是通过对材料进行冷加工处理（小于4221℃）来制造的。在300-4221℃的温度范围内将材料退火几个小时，在冷加工处理之间显着增加可以赋予材料的冷加工量。高纯度钴以这样的方式变形，使得（0002）hcp平面从目标法线倾斜10-351。上述相比例和晶体结构显着提高了溅射效率和材料利用率。

3. 发明授权

US06391172B2 High purity cobalt sputter target and process of manufacturing the same 失效
标题翻译：高纯钴溅射靶及其制造工艺相同
公开(公告)号：US06391172B2
公开(公告)日：2002-05-21
申请号：US09139240
申请日：1998-08-25
申请人： Robert S. Cole , Mathew S. Cooper , Stephen P. Turner , Yinshi Liu , Michael McCarty , Rodney L. Scagline
发明人： Robert S. Cole , Mathew S. Cooper , Stephen P. Turner , Yinshi Liu , Michael McCarty , Rodney L. Scagline
IPC分类号： C22C1900
CPC分类号： C22C19/07 , C22F1/10 , C23C14/3414
摘要： A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 422° C.). Annealing the material, at a temperature in the range 300-422° C. for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-35° from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.
摘要翻译：公开了一种高纯度钴溅射靶，其包含面心立方（fcc）相和六方密堆积（hcp）相，其中X射线衍射峰强度Ifcc（200）/ Ihcp（10 {overscore（1）} 1）小于通过从熔融的高温将fcc钴冷却至室温获得的高纯度钴材料的相同比例的值。高纯度钴被定义为氧含量不大于500ppm，Ni含量不超过200ppm，Fe，Al和Cr含量不大于50ppm，Na和K小于0.5 ppm。公开的溅射靶是通过对材料进行冷加工处理（小于422℃）来制造的。在300-422℃的温度范围内将材料退火几个小时，在冷加工处理之间显着地增加可以赋予材料的冷加工量。高纯度钴以这样的方式变形，以使（0002）hcp平面从目标法线倾斜10-35°。上述相比例和晶体结构显着提高了溅射效率和材料利用率。

4. 发明授权

US06833058B1 Titanium-based and zirconium-based mixed materials and sputtering targets 失效
标题翻译：钛基和锆基混合材料和溅射靶
公开(公告)号：US06833058B1
公开(公告)日：2004-12-21
申请号：US09695814
申请日：2000-10-24
申请人： Stephen P. Turner , Joseph E. Green , Rodney L. Scagline , Yun Xu
发明人： Stephen P. Turner , Joseph E. Green , Rodney L. Scagline , Yun Xu
IPC分类号： C23C1434
CPC分类号： C22B34/14 , C22B34/1263 , C23C14/3414
摘要： The invention encompasses methods of forming titanium-based mixed-metal materials and zirconium-based mixed-metal materials utilizing one or more of a reduction process, electrolysis process and iodide process. The invention also encompasses a sputtering target comprising zirconium and one or more elements selected from the group consisting of Al, B, Ba, Be, Ca, Ce, Co, Cs, Dy, Er, Fe, Gd, Hf, Ho, La, Mg, Mn, Mo, Nb, Nd, Ni, Pr, Sc, Sm, Sr, Ta, Ti, V, W, Y, and Yb. The invention also encompasses a sputtering target comprising titanium and boron.
摘要翻译：本发明包括利用还原法，电解法和碘化法中的一种或多种形成钛基混合金属材料和锆基混合金属材料的方法。本发明还包括包含锆和选自Al，B，Ba，Be，Ca，Ce，Co，Cs，Dy，Er，Fe，Gd，Hf，Ho，La中的一种或多种元素的溅射靶， Mg，Mn，Mo，Nb，Nd，Ni，Pr，Sc，Sm，Sr，Ta，Ti，V，W，Y和Yb。本发明还包括包含钛和硼的溅射靶。

5. 发明授权

US07517417B2 Tantalum PVD component producing methods 有权
标题翻译：钽PVD元件生产方法
公开(公告)号：US07517417B2
公开(公告)日：2009-04-14
申请号：US11331875
申请日：2006-01-12
申请人： Stephen P. Turner
发明人： Stephen P. Turner
IPC分类号： C22F1/18
CPC分类号： C22F1/18
摘要： A method for producing a tantalum PVD component includes a minimum of three stages, each of which include a deformation step followed by a high-temperature anneal. The deformation occurs in air and at a component temperature less than or equal to 750° F. in at least one of the minimum of three stages. The anneal occurs at a component temperature of at least 2200° F. in at least the first two of the minimum of three stages. The tantalum component exhibits a uniform texture that is predominately {111} . As an alternative, the deformation may occur at a component temperature of from 200° F. to 750° F. in at least the last stage of the minimum of three stages. The anneal may occur at a component temperature of from 1500° F. to 2800° F. in at least three of the minimum of three stages.
摘要翻译：一种制造钽PVD组件的方法包括至少三个阶段，每个阶段都包括变形步骤之后是高温退火。在最小三级中的至少一个中，变形发生在空气中并且在小于或等于750°F的部件温度下。退火在至少2200°F的分量温度下至少在最低三级的前两个中发生。钽组分表现出主要为{111} 的均匀纹理。作为替代方案，在至少最低三级的最后阶段中，变形可以在200°F至750°F的组件温度下发生。退火可以在至少三个最小三个阶段中的零件温度为1500°F至2800°F的情况下进行。

6. 发明授权

US06331233B1 Tantalum sputtering target with fine grains and uniform texture and method of manufacture 有权
标题翻译：钽溅射靶具有细颗粒和均匀的织构和制造方法
公开(公告)号：US06331233B1
公开(公告)日：2001-12-18
申请号：US09497079
申请日：2000-02-02
申请人： Stephen P. Turner
发明人： Stephen P. Turner
IPC分类号： C23C1434
CPC分类号： B22D19/14 , C04B30/02 , C04B35/111 , C04B35/803 , C22C1/1036 , C22C47/08 , C22C2001/1021 , C23C14/3414 , F16D55/22 , F16D2055/0016 , F16D2200/0004 , F16D2200/003 , F16D2200/0039 , F16D2200/006 , F16D2250/0015 , Y10T428/31678
摘要： A method for producing a tantalum sputtering component includes a minimum of three stages each of which include a deformation step followed by an inert atmosphere high-temperature anneal. Temperatures of each of the anneal steps can be different from one another. A tantalum sputtering component includes a mean grain size of less than about 100 microns and a uniform texture throughout the component thickness. The uniform texture can be predominately {111} .
摘要翻译：一种制造钽溅射元件的方法包括至少三个阶段，每个阶段包括随后是惰性气氛高温退火的变形步骤。每个退火步骤的温度可以彼此不同。钽溅射组件包括小于约100微米的平均粒度和整个组件厚度均匀的质地。统一纹理主要可以是{111} 。

7. 发明申请

US20090053540A1 Physical Vapor Deposition Targets Comprising Ti and Zr and Methods of Use 审中-公开
标题翻译：包含Ti和Zr的物理气相沉积目标和使用方法
公开(公告)号：US20090053540A1
公开(公告)日：2009-02-26
申请号：US12059020
申请日：2008-03-31
申请人： Stephen P. Turner
发明人： Stephen P. Turner
IPC分类号： B32B15/04 , B32B9/04 , C23C14/34
CPC分类号： C23C14/3414 , H01L21/31691
摘要： The invention described herein relates to physical vapor deposition targets comprising both Ti and Zr. The targets can comprise a uniform texture across the target surface and throughout the thickness; and can further have an increased mechanical strength compared to high purity titanium and tantalum. The sputtering targets can be utilized to sputter deposit a thin film; and such thin film can be utilized as a copper barrier layer.
摘要翻译：本文描述的本发明涉及包括Ti和Zr的物理气相沉积靶。目标可以包括穿过目标表面和整个厚度的均匀纹理; 并且与高纯钛和钽相比可以进一步具有增加的机械强度。溅射靶可用于溅射沉积薄膜; 并且这种薄膜可以用作铜阻挡层。

8. 发明授权

US07101447B2 Tantalum sputtering target with fine grains and uniform texture and method of manufacture 有权
公开(公告)号：US07101447B2
公开(公告)日：2006-09-05
申请号：US09999095
申请日：2001-10-30
申请人： Stephen P. Turner
发明人： Stephen P. Turner
IPC分类号： C22F1/18
CPC分类号： B22D19/14 , C04B30/02 , C04B35/111 , C04B35/803 , C22C1/1036 , C22C47/08 , C22C2001/1021 , C23C14/3414 , F16D55/22 , F16D2055/0016 , F16D2200/0004 , F16D2200/003 , F16D2200/0039 , F16D2200/006 , F16D2250/0015 , Y10T428/31678
摘要： A method for producing a tantalum sputtering component includes a minimum of three stages each of which include a deformation step followed by an inert atmosphere high-temperature anneal. Temperatures of each of the anneal steps can be different from one another. A tantalum sputtering component includes a mean grain size of less than about 100 microns and a uniform texture throughout the component thickness. The uniform texture can be predominately {111} .

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