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    • 3. 发明授权
    • Method for an improved developing process in wafer photolithography
    • 晶圆光刻技术改进显影工艺的方法
    • US06746826B1
    • 2004-06-08
    • US09624712
    • 2000-07-25
    • Jae Heon ParkJung Suk Bang
    • Jae Heon ParkJung Suk Bang
    • G03C500
    • G03F7/3021
    • Methods and apparatus are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. A method for achieving a more uniform, quasi-equilibrium succession of states from the introduction of developer chemical to the wafer surface to its removal is also described. The method reduces process-induced defects and improves critical dimension (CD) control.
    • 描述了用于改善液体聚合物和其它材料的产量和线宽性能的方法和装置。 通过降低pH的突然变化来最小化显影反应物的沉淀的方法包括:用显影剂流体的初始电荷在基底上显影至少一部分聚合物层; 然后用额外的显影剂流体冲洗聚合物,以便可控地最小化随后的pH的突然变化; 然后用另一种流体的电荷冲洗聚合物。 还描述了从引入显影剂化学品到晶片表面到其去除的实现更均匀的准平衡连续状态的方法。 该方法减少了工艺引起的缺陷并改善了临界尺寸(CD)控制。