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1. 发明申请

US20130224581A1 NEGATIVE ELECTRODE OF POWER STORAGE DEVICE AND POWER STORAGE DEVICE 审中-公开
标题翻译：蓄电装置和蓄电装置的负极
公开(公告)号：US20130224581A1
公开(公告)日：2013-08-29
申请号：US13597675
申请日：2012-08-29
申请人： Yumiko SAITO , Rie Yokoi , Mayumi Mikami
发明人： Yumiko SAITO , Rie Yokoi , Mayumi Mikami
IPC分类号： H01M4/38 , H01G11/50
CPC分类号： H01G11/48 , H01G11/30 , H01G11/32 , H01G11/50 , H01G11/52 , H01G11/62 , H01M4/0404 , H01M4/0471 , H01M4/13 , H01M4/131 , H01M4/137 , H01M4/1391 , H01M4/1399 , H01M4/366 , H01M4/386 , H01M4/387 , H01M4/483 , H01M4/606 , H01M4/662 , H01M10/0525 , H01M2004/027 , H01M2220/30 , Y02E60/13 , Y02T10/7022
摘要： A mixture of amorphous PAHs and at least one of a carrier ion storage metal, a Sn compound, a carrier ion storage alloy, a metal compound, Si, Sb, and SiO2 is used as the negative electrode active material. The theoretical capacity of amorphous PAHs greatly exceeds that of a graphite-based carbon material. Thus, the use of amorphous PAHs enables the negative electrode active material to have a higher capacity than in the case of using the graphite-based carbon material. Further, addition of at least one of the carrier ion storage metal, the Sn compound, the carrier ion storage alloy, the metal compound, Si, Sb, and SiO2 to the amorphous PAHs enables the negative electrode active material to have a higher capacity than the case of only using the amorphous PAHs.
摘要翻译：使用无定形PAH和载流子离子存储金属，Sn化合物，载流子离子储存合金，金属化合物，Si，Sb和SiO 2中的至少一种的混合物作为负极活性物质。无定形多环芳烃的理论能力大大超过石墨基碳材料的理论能力。因此，使用无定形PAH使得负极活性物质比使用石墨基碳材料的情况下具有更高的容量。此外，向非晶PAH中添加载体离子存储金属，Sn化合物，载体离子保存合金，金属化合物，Si，Sb和SiO 2中的至少一种使负极活性物质的容量比仅使用无定形多环芳烃的情况。

2. 发明授权

US08035107B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US08035107B2
公开(公告)日：2011-10-11
申请号：US12368759
申请日：2009-02-10
申请人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
发明人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
IPC分类号： H01L29/786
CPC分类号： H01L21/764 , H01L27/1288
摘要： A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.
摘要翻译：形成第一导电膜，第一绝缘膜，半导体膜，杂质半导体膜，第二导电膜和第一抗蚀剂掩模; 执行第一蚀刻以暴露第一导电膜的至少一个表面; 在第一导电膜的一部分上进行伴随着侧蚀刻的第二蚀刻，以形成栅电极层; 形成第二抗蚀剂掩模; 执行第三蚀刻以形成源极和漏极电极层，源极和漏极区域以及半导体层; 形成第二绝缘膜; 在第二绝缘膜中形成开口部分以部分地暴露源极或漏极电极层; 在开口部分和第二绝缘膜上选择性地形成像素电极; 并且在与开口部重叠的区域中形成使用该栅电极层形成的支撑部。

3. 发明授权

US08901561B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US08901561B2
公开(公告)日：2014-12-02
申请号：US13238019
申请日：2011-09-21
申请人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
发明人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
IPC分类号： H01L33/08 , H01L27/12 , H01L21/764
CPC分类号： H01L21/764 , H01L27/1288
摘要： A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.
摘要翻译：形成第一导电膜，第一绝缘膜，半导体膜，杂质半导体膜，第二导电膜和第一抗蚀剂掩模; 执行第一蚀刻以暴露第一导电膜的至少一个表面; 在第一导电膜的一部分上进行伴随着侧蚀刻的第二蚀刻，以形成栅电极层; 形成第二抗蚀剂掩模; 执行第三蚀刻以形成源极和漏极电极层，源极和漏极区域以及半导体层; 形成第二绝缘膜; 在第二绝缘膜中形成开口部分以部分地暴露源极或漏极电极层; 在开口部分和第二绝缘膜上选择性地形成像素电极; 并且在与开口部重叠的区域中形成使用该栅电极层形成的支撑部。

4. 发明授权

US08207026B2 Manufacturing method of thin film transistor and manufacturing method of display device 有权
标题翻译：薄膜晶体管的制造方法及显示装置的制造方法
公开(公告)号：US08207026B2
公开(公告)日：2012-06-26
申请号：US12693037
申请日：2010-01-25
申请人： Hideomi Suzawa , Takafumi Mizoguchi , Koji Dairiki , Mayumi Mikami , Yumiko Saito
发明人： Hideomi Suzawa , Takafumi Mizoguchi , Koji Dairiki , Mayumi Mikami , Yumiko Saito
IPC分类号： H01L21/764
CPC分类号： H01L27/1288 , H01L27/1214
摘要： To provide a method for manufacturing a thin film transistor and a display device using a small number of masks, a thin film transistor is manufactured in such a manner that a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; then, a resist mask is formed thereover; first etching is performed to form a thin-film stack body; second etching in which the first conductive film is side-etched is performed by dry-etching to form a gate electrode layer; and a source electrode, a drain electrode, and the like are formed. Before the dry etching, it is preferred that at least a side surface of the etched semiconductor film be oxidized.
摘要翻译：为了提供制造薄膜晶体管的方法和使用少量掩模的显示装置，制造薄膜晶体管，使得第一导电膜，绝缘膜，半导体膜，杂质半导体膜，并且第二导电膜被堆叠; 然后在其上形成抗蚀剂掩模; 执行第一蚀刻以形成薄膜堆叠体; 通过干蚀刻进行第一导电膜被侧蚀刻的第二蚀刻，以形成栅电极层; 并且形成源电极，漏电极等。在干蚀刻之前，优选地，蚀刻的半导体膜的至少一个侧表面被氧化。

5. 发明申请

US20090212296A1 METHOD FOR MANUFACTURING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20090212296A1
公开(公告)日：2009-08-27
申请号：US12368759
申请日：2009-02-10
申请人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
发明人： Takafumi Mizoguchi , Mayumi Mikami , Yumiko Saito
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L21/764 , H01L27/1288
摘要： A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.
摘要翻译：形成第一导电膜，第一绝缘膜，半导体膜，杂质半导体膜，第二导电膜和第一抗蚀剂掩模; 执行第一蚀刻以暴露第一导电膜的至少一个表面; 在第一导电膜的一部分上进行伴随着侧蚀刻的第二蚀刻，以形成栅电极层; 形成第二抗蚀剂掩模; 执行第三蚀刻以形成源极和漏极电极层，源极和漏极区域以及半导体层; 形成第二绝缘膜; 在第二绝缘膜中形成开口部分以部分地暴露源极或漏极电极层; 在开口部分和第二绝缘膜上选择性地形成像素电极; 并且在与开口部重叠的区域中形成使用该栅电极层形成的支撑部。

6. 发明授权

US08865270B2 Method for manufacturing power storage device 有权
标题翻译：蓄电装置的制造方法
公开(公告)号：US08865270B2
公开(公告)日：2014-10-21
申请号：US13339486
申请日：2011-12-29
申请人： Mayumi Mikami , Takuya Miwa , Kuniharu Nomoto , Takeshi Osada
发明人： Mayumi Mikami , Takuya Miwa , Kuniharu Nomoto , Takeshi Osada
IPC分类号： B05D5/00 , B05D5/12 , H01M4/1397 , H01M4/36 , H01M4/58
CPC分类号： H01M4/1397 , H01M4/36 , H01M4/366 , H01M4/58 , H01M4/5825 , Y02E60/122 , Y02P70/54 , Y02T10/7011 , Y10T29/49108 , Y10T29/49115
摘要： The power extraction efficiency of a nonaqueous electrolyte secondary battery such as a lithium ion battery is improved. A material having magnetic susceptibility anisotropy such as an olivine type oxide including a transition metal element is used for active material particles. The active material particles and an electrolyte solution are mixed to form a slurry. The slurry is applied to a current collector, and then the current collector is left in a magnetic field. Thus, the active material particles are oriented. With the use of active material particles oriented in such a manner, the power extraction efficiency can be improved.
摘要翻译：提高锂离子电池等非水电解质二次电池的功率提取效率。使用具有磁化率各向异性的材料，例如包含过渡金属元素的橄榄石型氧化物作为活性物质颗粒。将活性物质粒子和电解液混合形成浆料。将浆料施加到集电体上，然后将集电体置于磁场中。因此，活性物质颗粒被取向。通过使用以这种方式取向的活性材料颗粒，可以提高功率提取效率。

7. 发明授权

US08435870B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08435870B2
公开(公告)日：2013-05-07
申请号：US12767108
申请日：2010-04-26
申请人： Mayumi Mikami , Konami Izumi
发明人： Mayumi Mikami , Konami Izumi
IPC分类号： H01L21/768 , H01L21/20
CPC分类号： H01L27/1266 , H01L21/76814 , H01L25/0657 , H01L27/124 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes: forming a first and second layers not firmly adhering to each other over a substrate; forming a first semiconductor element layer and a first insulating layer over the second layer; forming a hole reaching the first layer in the first insulating layer; oxidizing the first layer exposed at a bottom of the hole; forming a wiring electrically connected to the first semiconductor element layer over the first insulating layer and in the hole; and separating the first layer and the substrate from the second layer and the first semiconductor element layer and expose the wiring. Further, another method includes providing an anisotropic conductive adhesive between a second semiconductor element layer separated through a manufacturing process similar to the above and the wiring, whereby the first and second semiconductor element layers are electrically connected through the anisotropic conductive adhesive and the wiring.
摘要翻译：一种制造半导体器件的方法包括：在衬底上形成彼此不牢固地粘合的第一和第二层; 在所述第二层上形成第一半导体元件层和第一绝缘层; 在所述第一绝缘层中形成到达所述第一层的孔; 氧化暴露在孔底部的第一层; 在所述第一绝缘层和所述孔中形成与所述第一半导体元件层电连接的布线; 以及将所述第一层和所述衬底与所述第二层和所述第一半导体元件层分离并使所述布线露出。此外，另一方法包括在通过类似于上述制造工艺分离的第二半导体元件层和布线之间提供各向异性导电粘合剂，由此第一和第二半导体元件层通过各向异性导电粘合剂和布线电连接。

8. 发明申请

US20120015245A1 MANUFACTURING METHOD OF ELECTRODE OF POWER STORAGE DEVICE, ELECTRODE OF POWER STORAGE DEVICE, AND POWER STORAGE DEVICE 审中-公开
标题翻译：蓄电装置的电极，蓄电装置的电极和蓄电装置的制造方法
公开(公告)号：US20120015245A1
公开(公告)日：2012-01-19
申请号：US13181592
申请日：2011-07-13
申请人： Mako Kishino , Mayumi Mikami , Konami Izumi
发明人： Mako Kishino , Mayumi Mikami , Konami Izumi
IPC分类号： H01M4/66 , H01M4/139 , B05D5/12 , B82Y40/00 , B82Y30/00
CPC分类号： B82Y30/00 , H01M4/0404 , H01M4/131 , H01M4/1391 , H01M4/623 , H01M4/625 , H01M4/661
摘要： A shiny is manufactured using a low-molecular-weight organic acid as a dispersant and a nonaqueous organic solvent as a solvent, whereby a coated electrode for a power storage device in which an active material which has been made into microparticles each having a particle diameter of 100 nm or less is uniformly dispersed can be manufactured. By the use of the coated electrode manufactured in this manner, a power storage device with high charge/discharge characteristics can be manufactured. In other words, a power storage device with high capacity density can be realized because the amount of impurities is small and the power density is high due to the sufficient dispersion of the active material in the active material layer.
摘要翻译：使用作为分散剂的低分子量有机酸和作为溶剂的非水有机溶剂制造发光体，由此制成具有粒径的微粒的活性物质的蓄电装置用被覆电极 100nm以下均匀分散。通过使用以这种方式制造的涂覆电极，可以制造具有高充电/放电特性的蓄电装置。换句话说，由于活性物质层中活性物质的充分分散，杂质的量少，功率密度高，所以能够实现高容量密度的蓄电装置。

9. 发明申请

US20110281389A1 Micromachine and Method for Manufacturing the Same 有权
标题翻译：微机械及其制造方法
公开(公告)号：US20110281389A1
公开(公告)日：2011-11-17
申请号：US13189734
申请日：2011-07-25
申请人： Mayumi Mikami , Konami Izumi
发明人： Mayumi Mikami , Konami Izumi
IPC分类号： H01L21/00
CPC分类号： H01H59/0009 , B81B2201/018 , B81C1/00166 , H01H1/58 , H01H2001/0052 , H01H2001/0057 , Y10T29/49155
摘要： A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.
摘要翻译：在形成有表面微机械加工技术的微型机械（MEMS机构）中，提供了防止配线断线和断线的结构。在牺牲层之上的布线（上辅助布线）在牺牲层上电连接到不同的布线（上连接布线），从而在生成的台阶部分上形成在牺牲层上的布线的变薄，断开等由于可以防止牺牲层的厚度。牺牲层上的布线由与作为可动电极的上驱动电极相同的导电膜形成，因此薄。然而，不同的布线形成在通过CVD法形成并具有圆形台阶的结构层上，并且具有200nm至1μm的厚度，从而可以进一步布线的变薄，断开等防止了

10. 发明授权

US08470629B2 Method for manufacturing micromachine 有权
标题翻译：微机械制造方法
公开(公告)号：US08470629B2
公开(公告)日：2013-06-25
申请号：US13189734
申请日：2011-07-25
申请人： Mayumi Mikami , Konami Izumi
发明人： Mayumi Mikami , Konami Izumi
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01H59/0009 , B81B2201/018 , B81C1/00166 , H01H1/58 , H01H2001/0052 , H01H2001/0057 , Y10T29/49155
摘要： A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.
摘要翻译：在形成有表面微机械加工技术的微型机械（MEMS机构）中，提供了防止配线断线和断线的结构。在牺牲层之上的布线（上辅助布线）在牺牲层上电连接到不同的布线（上连接布线），从而在生成的台阶部分上形成在牺牲层上的布线的变薄，断开等由于可以防止牺牲层的厚度。牺牲层上的布线由与作为可动电极的上驱动电极相同的导电膜形成，因此薄。然而，不同的布线形成在通过CVD法形成并具有圆形台阶的结构层上，并且具有200nm至1μm的厚度，由此可以进一步布线的变薄，断开等防止了

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