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1. 发明授权

US08668895B2 Purifying method for metallic silicon and manufacturing method of silicon ingot 失效
标题翻译：金属硅的净化方法及硅锭的制造方法
公开(公告)号：US08668895B2
公开(公告)日：2014-03-11
申请号：US12440531
申请日：2008-06-24
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要翻译：在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度预定时间。

2. 发明申请

US20100196623A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20100196623A1
公开(公告)日：2010-08-05
申请号：US12680043
申请日：2008-09-09
申请人： Kazuyoshi Honda , Yuma Kamiyama , Kunihiko Bessho , Tomofumi Yanagi , Yasuharu Shinokawa , Toshitada Sato
发明人： Kazuyoshi Honda , Yuma Kamiyama , Kunihiko Bessho , Tomofumi Yanagi , Yasuharu Shinokawa , Toshitada Sato
IPC分类号： B05D3/06 , B05D3/02 , B05D3/00 , B05C5/04
CPC分类号： C23C14/246 , B22D11/10 , B22D11/143 , C23C14/30 , C23C14/562
摘要： The present invention provides a film forming method and a film forming apparatus each of which is capable of forming films at low cost. The film forming method of the present invention includes the steps of (i) melting a solid material 51 of a thin film to prepare a melted liquid, solidifying the melted liquid 51a to form a rod-shaped body 51b, and pulling out the rod-shaped body 51b, (ii) melting and supplying a part of the rod-shaped body 51b to a melted liquid (evaporation source) 51d, and (iii) using the melted liquid (evaporation source) 51d to form the thin film. The steps (i), (ii), and (iii) are carried out in vacuum.
摘要翻译：本发明提供一种能够以低成本形成膜的成膜方法和成膜装置。本发明的成膜方法包括以下步骤：（i）熔化薄膜的固体材料51以制备熔融液体，使熔融液体51a固化形成杆状体51b，（ii）将棒状体51b的一部分熔融并供给到熔融液体（蒸发源）51d，（iii）使用熔融液（蒸发源）51d来形成薄膜。步骤（i），（ii）和（iii）在真空中进行。

3. 发明申请

US20120009349A1 THIN FILM FORMING DEVICE AND THIN FILM FORMING METHOD 审中-公开
标题翻译：薄膜形成装置和薄膜形成方法
公开(公告)号：US20120009349A1
公开(公告)日：2012-01-12
申请号：US13257514
申请日：2010-04-14
申请人： Yasuharu Shinokawa , Satoshi Shibutani , Kazuyoshi Honda , Takashi Shimada , Yuma Kamiyama , Masahiro Yamamoto
发明人： Yasuharu Shinokawa , Satoshi Shibutani , Kazuyoshi Honda , Takashi Shimada , Yuma Kamiyama , Masahiro Yamamoto
IPC分类号： B05D3/00 , B05D1/00 , C23C14/00
CPC分类号： C23C14/562 , C23C14/541
摘要： In a film forming method using gas cooling, a decrease in a film formation rate and an excessive load on a vacuum pump due to gas introduction are avoided while achieving an adequate cooling effect. A thin film forming device of the present invention includes: a cooling body 10 having a cooling surface 10S located near a rear surface of a substrate 7 in a thin film forming region 9; and a gas introducing unit configured to introduce a gas to between the cooling surface 10S and the rear surface of the substrate 7. In a width-direction cross section of the substrate, a center portion of the cooling surface is shaped to project toward the rear surface of the substrate 7 as compared to both end portions of the cooling surface. In the width-direction cross section of the substrate, the cooling surface preferably has a bilaterally-symmetric shape and more preferably has a shape represented by a catenary curve.
摘要翻译：在使用气体冷却的成膜方法中，避免了由于气体导入而导致的真空泵的成膜速度的降低和真空泵的过大的负荷，同时达到充分的冷却效果。本发明的薄膜形成装置包括：在薄膜形成区域9中具有位于基板7的后表面附近的冷却表面10S的冷却体10; 以及气体引入单元，其被配置为将气体引入到冷却表面10S和基板7的后表面之间。在基板的宽度方向横截面中，冷却表面的中心部分成形为向后突出与冷却表面的两个端部相比，衬底7的表面。在基板的宽度方向截面中，冷却面优选具有双向对称的形状，更优选具有由悬链曲线表示的形状。

4. 发明申请

US20110269020A1 ELECTROCHEMICAL ELEMENT ELECTRODE PRODUCING METHOD, ELECTROCHEMICAL ELEMENT ELECTRODE, AND ELECTROCHEMICAL ELEMENT 审中-公开
标题翻译：电化学元件电极生产方法，电化学元件电极和电化学元件
公开(公告)号：US20110269020A1
公开(公告)日：2011-11-03
申请号：US13143123
申请日：2010-01-07
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Tomofumi Yanagi
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Tomofumi Yanagi
IPC分类号： H01M4/134 , B32B3/00 , H01G4/06 , C23C28/00 , B32B38/10 , H01M4/1395 , B05D5/12
CPC分类号： H01M4/485 , H01G11/28 , H01G11/50 , H01G11/70 , H01G11/86 , H01M4/0421 , H01M4/134 , H01M4/1395 , Y02E60/13 , Y10T428/24355
摘要： Provided is a method for easily and surely removing projections formed on the surface of an active material layer by a vacuum process when producing an electrochemical element electrode. Carried out to produce the electrochemical element electrode are: a first step of forming an active material layer on a current collector by a vacuum process, the active material layer being capable of storing and emitting lithium; a second step of storing the lithium in the active material layer; and a third step of removing projections on the surface of the active material layer storing the lithium.
摘要翻译：提供了一种在制造电化学元件电极时通过真空工艺容易且可靠地去除在活性物质层的表面上形成的突起的方法。进行电化学元件电极的制造是：通过真空工艺在集电体上形成活性物质层的第一步骤，活性物质层能够储存和释放锂; 将锂储存在活性物质层中的第二步骤; 以及除去存储锂的活性物质层的表面上的突起的第三步骤。

5. 发明申请

US20110111121A1 THIN FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20110111121A1
公开(公告)日：2011-05-12
申请号：US12866434
申请日：2009-02-10
申请人： Kazuyoshi Honda , Yuma Kamiyama , Yasuharu Shinokawa , Masahiro Yamamoto
发明人： Kazuyoshi Honda , Yuma Kamiyama , Yasuharu Shinokawa , Masahiro Yamamoto
IPC分类号： B05D1/12 , B29C41/28
CPC分类号： C23C14/562 , C23C14/042 , C23C14/30
摘要： The present invention relates to a method of forming a thin film by depositing, in a vacuum, particles emitted from a film forming source (27) on a substrate (21). Specifically, the particles are deposited on the substrate (21) in a state where a movable endless belt (11) is disposed between the film forming source (27) and the substrate (21) so that a film forming area DA is defined on a surface of the substrate (21) by the endless belt (11), whose moving path has a forward path and a return path that are formed between the film forming source (27) and the substrate (21). Typically, the substrate (21) is an elongated substrate having flexibility. The particles are deposited on the substrate (21) that is being transferred from a feed roller (23) to a take-up roller (26).
摘要翻译：本发明涉及一种通过在真空中沉积从成膜源（27）在基片（21）上发射的颗粒来形成薄膜的方法。具体地，在可动环形带（11）设置在成膜源（27）和基板（21）之间的状态下，在基板（21）上沉积颗粒，使得成膜区域DA被定义在通过环形带（11）的基板（21）的表面，其移动路径具有形成在成膜源（27）和基板（21）之间的前进路径和返回路径。通常，衬底（21）是具有柔性的细长衬底。颗粒沉积在从进料辊（23）转移到卷取辊（26）的基材（21）上。

6. 发明申请

US20100272887A1 THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD 审中-公开
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：US20100272887A1
公开(公告)日：2010-10-28
申请号：US12738951
申请日：2008-11-05
申请人： Kazuyoshi Honda , Yuma Kamiyama , Tomofumi Yanagi , Yasuharu Shinokawa , Masahiro Yamamoto
发明人： Kazuyoshi Honda , Yuma Kamiyama , Tomofumi Yanagi , Yasuharu Shinokawa , Masahiro Yamamoto
IPC分类号： B05D3/12 , C23C14/00 , B05D3/00
CPC分类号： C23C14/541 , C23C14/562 , C23C16/463 , C23C16/466 , C23C16/52 , C23C16/545
摘要： To provide a thin film forming apparatus capable of uniformly and adequately cooling down a substrate. The thin film forming apparatus of the present invention forms a thin film on an elongated substrate in vacuum and includes: a cooling body 1 provided close to a rear surface of the substrate being transferred at an opening 31; a gas introducing unit configured to introduce a gas to between the cooling body 1 and the substrate 21; and a substrate holding unit 3 configured to hold vicinities of both width-direction ends of the substrate traveling at the opening 31.
摘要翻译：提供能够均匀且充分冷却基板的薄膜形成装置。本发明的薄膜形成装置在真空中在细长基板上形成薄膜，其特征在于，包括：在开口部31被转印的，靠近基板的后表面设置的冷却体1; 气体导入单元，被配置为将气体引入到所述冷却体1和所述基板21之间; 以及基板保持单元3，其构造成保持在开口部31行进的基板的宽度方向两端的附近。

7. 发明申请

US20090280049A1 PURIFYING METHOD FOR METALLIC SILICON AND MANUFACTURING METHOD OF SILICON INGOT 失效
标题翻译：金属硅的净化方法及其制造方法
公开(公告)号：US20090280049A1
公开(公告)日：2009-11-12
申请号：US12440531
申请日：2008-06-24
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要翻译：在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度预定时间。

8. 发明申请

US20120100306A1 THIN FILM MANUFACTURING METHOD AND SILICON MATERIAL WHICH CAN BE USED IN THE METHOD 审中-公开
标题翻译：薄膜制造方法和可用于该方法的硅材料
公开(公告)号：US20120100306A1
公开(公告)日：2012-04-26
申请号：US13379282
申请日：2010-07-01
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa
IPC分类号： B05D3/06 , C01B33/02 , B05D3/02
CPC分类号： C23C14/246 , C01B33/02 , C23C14/14
摘要： Particles coming from an evaporation source 9 are deposited on a substrate 21 at a specified film forming position 33 in a vacuum so as to form a thin film on the substrate 21. A rod-shaped material 32 containing a source material of the thin film is melted above the evaporation source 9 and the melted material is supplied to the evaporation source 9 in the form of droplets 14. As the rod-shaped material 32, a rod-shaped silicon material in which a plurality of first regions each surrounded by a grain boundary are present at positions of 90% length from a center toward an outer peripheral part on a cross section perpendicular to a longitudinal direction of the material, and an area-weighted average value of major diameters of the first regions is 200 μm or less, and a plurality of second regions each surrounded by a grain boundary are present at positions of 50% length from the center toward the outer peripheral part, and an area-weighted average value of major diameters of the second regions is 1000 μm or more is used.
摘要翻译：来自蒸发源9的颗粒在真空中在指定的膜形成位置33处沉积在基板21上，以在基板21上形成薄膜。包含薄膜源材料的棒状材料32是熔化在蒸发源9上方，并且熔融的材料以液滴14的形式供应到蒸发源9.作为棒状材料32，其中多个第一区域被颗粒包围的棒状材料边界存在于与材料的纵向方向垂直的截面上从中心朝向外周部的长度为90％的位置，第一区域的长径的面积加权平均值为200μm以下，并且由晶界包围的多个第二区域存在于从中心向外周部分的长度为50％的位置处，并且第二区域的主要直径的面积加权平均值区域为1000μm以上。

9. 发明申请

US20110111135A1 THIN FILM MANUFACTURING METHOD AND SILICON MATERIAL THAT CAN BE USED WITH SAID METHOD 审中-公开
标题翻译：薄膜制造方法和可以使用方法的硅材料
公开(公告)号：US20110111135A1
公开(公告)日：2011-05-12
申请号：US13002876
申请日：2009-07-07
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa
IPC分类号： B05D5/12 , C01B33/02 , B05D3/06 , B05D3/00 , C23C16/00
CPC分类号： C23C14/246 , C23C14/20 , C23C14/562 , H01M4/0421 , H01M4/1395 , H01M6/40 , H01M10/052
摘要： Particles coming from an evaporation source 9 are deposited on a substrate 21 at a predetermined film forming position 33 in a vacuum so as to form a thin film on the substrate 21. A bulk material 32 containing a source material of the thin film is melted above the evaporation source 9, and the melted material is supplied to the evaporation source 9 in the form of droplets 14. A silicon material 32 including a plurality of pores therein is used as the bulk material 32. Preferably, the pores have a lower average internal pressure than an atmospheric pressure. More preferably, the average internal pressure is 0.1 atm or less.
摘要翻译：来自蒸发源9的颗粒在真空中在预定的膜形成位置33处沉积在基板21上，以在基板21上形成薄膜。将含有薄膜源材料的散装材料32熔化在蒸发源9和熔化的材料以液滴14的形式供应到蒸发源9.将包括多个孔的硅材料32用作主体材料32.优选地，孔具有较低的平均内部压力大于大气压。更优选地，平均内压为0.1atm以下。

10. 发明申请

US20100089544A1 MOLD FOR FORMING CAST RODS, CASTING APPARATUS, AND PRODUCTION METHOD OF CAST RODS 有权
标题翻译：模具铸造模具，铸造装置和铸件生产方法
公开(公告)号：US20100089544A1
公开(公告)日：2010-04-15
申请号：US12576486
申请日：2009-10-09
申请人： Kazuyoshi Honda , Yuma Kamiyama , Yasuharu Shinokawa
发明人： Kazuyoshi Honda , Yuma Kamiyama , Yasuharu Shinokawa
IPC分类号： B22D23/00 , B29C39/26 , B22C9/22 , B22D45/00 , B22C9/00
CPC分类号： C01B33/02 , B22C9/061 , B22C9/22
摘要： Disclosed is a mold 10 for forming cast rods including: a segment assembly 12 including a plurality of segments 14 being placed side by side, and a plurality of cavities 26 extending along a longitudinal direction 16; and clamping means (18 to 21) for clamping the segment assembly 12 in directions orthogonal to the longitudinal direction 16. The mold 10 has one or more cavity-forming portions 28 each forming a part of one of the peripheral surfaces of the cavities 26. Each cavity 26 is formed by a combination of two or more segments 14, and at least one of the plurality of segments 14 has two or more cavity-forming portions 28.
摘要翻译：公开了一种用于形成铸棒的模具10，其包括：分段组件12，其包括并排放置的多个段14和沿着纵向方向16延伸的多个空腔26; 以及用于沿垂直于纵向方向16的方向夹紧段组件12的夹紧装置（18至21）。模具10具有一个或多个空腔形成部分28，每个腔形成部分形成空腔26的一个周边表面的一部分。每个空腔26由两个或多个段14的组合形成，并且多个段14中的至少一个具有两个或更多个空腔形成部分28。

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