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1. 发明授权

US5136348A Structure and manufacturing method for thin-film semiconductor diode device 失效
标题翻译：薄膜半导体二极管器件的结构和制造方法
公开(公告)号：US5136348A
公开(公告)日：1992-08-04
申请号：US647194
申请日：1991-01-28
申请人： Yukio Tsuzuki , Masami Yamaoka , Hiroshi Muto
发明人： Yukio Tsuzuki , Masami Yamaoka , Hiroshi Muto
IPC分类号： H01L27/06 , H01L27/12 , H01L29/04 , H01L29/78 , H01L29/861
CPC分类号： H01L29/7804 , H01L27/0688 , H01L27/12 , H01L29/04 , H01L29/861 , Y10S257/926
摘要： A structure and manufacturing method for a thin film semiconductor device consisting of a single diode or a plurality of diodes connected in series, the device being formed of at least one pair of mutually adjacent P-type (23a) and N-type (23b) regions formed in a layer of polycrystalline silicon (23) deposited on an insulating film (22) upon a substrate (21), to thereby define at least one PN junction. Each of the p-type regions and N-type regions is shaped as a rectangle, with opposite ends of each PN junction formed between these regions being respectively defined by two opposing sides of the polycrystalline silicon layer. Since each of the PN junctions is substantially rectilinear, an even distribution of current flow through each PN junction is attained, whereby a high resistance to destruction and an extremely stable value of reverse bias breakdown voltage are achieved.
摘要翻译：一种由串联连接的单个二极管或多个二极管组成的薄膜半导体器件的结构和制造方法，该器件由至少一对相互相邻的P型（23a）和N型（23b）形成，在衬底（21）上沉积在绝缘膜（22）上的多晶硅层（23）中形成的区域，从而限定至少一个PN结。每个p型区域和N型区域被成形为矩形，其中形成在这些区域之间的每个PN结的相对端分别由多晶硅层的两个相对侧限定。由于每个PN结基本上都是直线的，所以能够获得通过每个PN结的电流的平均分布，从而实现了高的抗破坏性和非常稳定的反向偏压击穿电压值。

2. 发明授权

US5264720A High withstanding voltage transistor 失效
标题翻译：高耐压晶体管
公开(公告)号：US5264720A
公开(公告)日：1993-11-23
申请号：US879550
申请日：1992-05-04
申请人： Hiroshi Muto , Masami Yamaoka
发明人： Hiroshi Muto , Masami Yamaoka
IPC分类号： H01L27/12 , H01L27/01 , H01L29/76
CPC分类号： H01L27/1203
摘要： A high withstanding voltage transistor is provided with a substrate with its main surface at least part of which is electrically insulated, and a plurality of MOS type field effect transistors of the same channel type that are formed on the insulated main surface of the substrate, the channel regions of the number of MOS type field effect transistors are electrically separated respectively, the gates of the plurality of MOS type field effect transistors are mutually connected electrically, between and among the plurality of MOS type field effect transistors, the source of one transistor is connected to the drain of another transistor, and connecting in series the plurality of MOS type field effect transistors, they are made into a single transistor, thereby dividing the voltage applied in between the drain and the source of this high withstanding voltage transistor with depletion layer of the respective transistors and in turn improving the withstanding voltage of the whole.
摘要翻译：高耐压晶体管设置有其主表面的至少一部分是电绝缘的基板，以及形成在基板的绝缘主表面上的多个相同沟道类型的MOS型场效应晶体管，多个MOS型场效应晶体管的通道区分别电分离，多个MOS型场效应晶体管的栅极电连接，在多个MOS型场效应晶体管之间和之间相互连接，一个晶体管的源极连接到另一个晶体管的漏极，并串联连接多个MOS型场效应晶体管，将它们制成单个晶体管，从而将施加在该耐高压晶体管的漏极和源极之间的电压除以耗尽层并进而改善整体的耐受电压。

3. 发明授权

US5248623A Method for making a polycrystalline diode having high breakdown 失效
标题翻译：制造具有高击穿的多晶二极管的方法
公开(公告)号：US5248623A
公开(公告)日：1993-09-28
申请号：US772472
申请日：1991-10-07
申请人： Hiroshi Muto , Masami Yamaoka
发明人： Hiroshi Muto , Masami Yamaoka
IPC分类号： H01L27/06 , H01L29/861
CPC分类号： H01L27/0688 , H01L29/861 , Y10S148/013
摘要： A diode which includes a first region formed in a polycrystalline silicon layer formed on a substrate. The diode has a predetermined width W and is one of an intrinsic region and a region including impurities at a low concentration therein, a second region and a third region including P-type impurities and N-type impurities therein respectively and both being oppositely arranged from each other with the first region therebetween in the polycrystalline silicon layer. Electrodes are electrically connected to the second region and the third region respectively, and further the film characteristic of the polycrystalline silicon layer and the predetermined width W thereof are determined in such a manner as to fulfill the following equation:W.sub.D .ltoreq.W.ltoreq.LL represents a carrier diffusion length and W.sub.D represents a width of the depletion layer created in the polycrystalline silicon layer when the voltage corresponding to the withstand voltage required by the polycrystalline diode as mentioned above, is applied thereto.
摘要翻译：一种二极管，其包括形成在形成于基板上的多晶硅层中的第一区域。二极管具有预定的宽度W，并且是本征区域和包括其中低浓度的杂质的区域中的一个，第二区域和分别包括P型杂质和N型杂质的第三区域，并且两者分别从在多晶硅层中彼此具有第一区域。电极分别电连接到第二区域和第三区域，并且进一步确定多晶硅层的膜特性和其预定宽度W，以便满足以下等式：WD

4. 发明授权

US5168337A Polycrystalline diode and a method for making the same 失效
标题翻译：多晶二极管及其制造方法
公开(公告)号：US5168337A
公开(公告)日：1992-12-01
申请号：US865690
申请日：1992-04-08
申请人： Hiroshi Muto , Masami Yamaoka
发明人： Hiroshi Muto , Masami Yamaoka
IPC分类号： H01L27/06 , H01L29/861
CPC分类号： H01L29/861 , H01L27/0688
摘要： A diode which includes a first region formed in a polycrystalline silicon layer formed on a substrate. The diode has a predetermined width W and is one of an intrinsic region and a region including impurities at a low concentration therein, a second region and a third region including P-type impurities and N-type impurities therein respectively and both being oppositely arranged from each other with the first region therebetween in the polycrystalline silicon layer. Electrodes are electrically connected to the second region and the third region respectively, and further the film characteristic of the polycrystalline silicon layer and the predetermined width W thereof are determined in such a manner as to fulfill the following equation:W.sub.D .ltoreq.W.ltoreq.LL represents a carrier diffusion length and W.sub.D represents a width of the depletion layer created in the polycrystalline silicon layer when the voltage corresponding to the withstand voltage required by the polycrystalline diode as mentioned above, is applied thereto.
摘要翻译：一种二极管，其包括形成在形成于基板上的多晶硅层中的第一区域。二极管具有预定的宽度W，并且是本征区域和包括其中低浓度的杂质的区域中的一个，第二区域和分别包括P型杂质和N型杂质的第三区域，并且两者分别从在多晶硅层中彼此具有第一区域。电极分别电连接到第二区域和第三区域，并且进一步确定多晶硅层的膜特性和其预定宽度W，以便满足以下等式：WD

5. 发明授权

US08176802B2 Fibrous particle generating apparatus and test system 失效
标题翻译：纤维颗粒发生装置和试验系统
公开(公告)号：US08176802B2
公开(公告)日：2012-05-15
申请号：US12275350
申请日：2008-11-21
申请人： Hiroshi Muto , Shouji Hattori , Shinichirou Kouno
发明人： Hiroshi Muto , Shouji Hattori , Shinichirou Kouno
IPC分类号： G01M99/00 , B02C4/12 , B02C19/20 , B01J2/00
CPC分类号： B02C19/20 , G01M99/00
摘要： There is provided a fibrous particle generating apparatus and a test system. The fibrous particle generating apparatus includes a base material containing a fibrous material; a holding unit holding the base material; a fibrous particle generator generating fibrous particles by chafing the base material; and a movement unit moving the holding unit such that the base material held by holding unit is chafed against the fibrous particle generator. With this configuration, fibrous particles can be stably generated, and an evaluation of the object apparatus can be carried out on the basis of the generated fibrous particles.
摘要翻译：提供了纤维颗粒发生装置和测试系统。纤维颗粒发生装置包括含有纤维材料的基材; 保持所述基材的保持单元; 纤维颗粒发生器，通过擦洗基材产生纤维颗粒; 以及移动单元，使所述保持单元移动，使得由保持单元保持的基材被擦伤所述纤维颗粒发生器。利用这种构造，可以稳定地产生纤维颗粒，并且可以基于所生成的纤维颗粒进行对象装置的评价。

6. 发明申请

US20120033382A1 HEAT SINK, LIQUID COOLING UNIT, AND ELECTRONIC APPARATUS 审中-公开
标题翻译：散热器，液体冷却单元和电子设备
公开(公告)号：US20120033382A1
公开(公告)日：2012-02-09
申请号：US13167230
申请日：2011-06-23
申请人： Yosuke Tsunoda , Masumi Suzuki , Michimasa Aoki , Masaru Sugie , Shinichirou Kouno , Hiroshi Muto , Kenji Katsumata
发明人： Yosuke Tsunoda , Masumi Suzuki , Michimasa Aoki , Masaru Sugie , Shinichirou Kouno , Hiroshi Muto , Kenji Katsumata
IPC分类号： H05K7/20 , F28D15/00 , F28F7/00
CPC分类号： F28D15/043 , F28D15/0233 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： A heat sink for absorbing heat which is generated by an electronic module by using a coolant which flows in its internal portion, comprises a housing which is provided with, in its internal portion, a first surface which is located in the vicinity of the electronic module and a second surface which faces the first surface and comprises fins which extend from the first surface toward the second surface, wherein a projecting portion projecting from the second surface toward the first surface is formed at the second surface, between the top edges of the fins on the second surface side and the second surface.
摘要翻译：一种用于吸收由电子模块产生的热量的散热片，其通过使用在其内部部分流动的冷却剂而包括壳体，该壳体在其内部设有位于电子模块附近的第一表面以及面对所述第一表面的第二表面，并且包括从所述第一表面朝向所述第二表面延伸的翅片，其中在所述第二表面处形成从所述第二表面朝向所述第一表面突出的突出部分，在第二表面侧和第二表面上。

7. 发明授权

US5573982A Slurry composition, shaping method using the same, and fired body 失效
标题翻译：浆料组成，使用它的成型方法和烧制体
公开(公告)号：US5573982A
公开(公告)日：1996-11-12
申请号：US398649
申请日：1995-03-03
申请人： Naoyuki Katoh , Kumehiko Sanada , Hiroshi Muto
发明人： Naoyuki Katoh , Kumehiko Sanada , Hiroshi Muto
IPC分类号： C04B33/24 , C04B35/111 , C04B35/634 , C04B35/00
CPC分类号： C04B35/63416 , C04B33/24 , C04B35/111 , C04B35/634 , C04B35/63424
摘要： A slurry composition is described, which comprises 100 parts by weight of a raw mineral material for white ware and/or a raw mineral material for advanced ceramics, from 0.5 to 20 parts by weight of a re-dispersible resin powder, and water. A shaping using the slurry composition and a fired body are also described.
摘要翻译：描述了一种浆料组合物，其包含100重量份的用于白色制品的原始矿物材料和/或用于高级陶瓷的原始矿物材料，0.5至20重量份的可再分散树脂粉末和水。还描述了使用浆料组合物和烧制体的成型。

8. 发明授权

US09406586B2 Cooling jacket and electronic device having the same 有权
标题翻译：冷却套和具有相同的电子装置
公开(公告)号：US09406586B2
公开(公告)日：2016-08-02
申请号：US13073394
申请日：2011-03-28
申请人： Masumi Suzuki , Michimasa Aoki , Yosuke Tsunoda , Masaru Sugie , Shinichirou Kouno , Hiroshi Muto , Kenji Katsumata
发明人： Masumi Suzuki , Michimasa Aoki , Yosuke Tsunoda , Masaru Sugie , Shinichirou Kouno , Hiroshi Muto , Kenji Katsumata
IPC分类号： F28D15/00 , H01L23/473 , F28F1/22 , F28F3/12 , F28D15/02
CPC分类号： H05K7/20254 , F28D15/00 , F28D15/0266 , F28F1/22 , F28F3/12 , G06F1/20 , H01L23/473 , H01L2924/0002 , H05K1/0203 , H05K7/20154 , H05K7/20436 , H01L2924/00
摘要： A cooling jacket includes: first and second pipe portions through which a coolant flows; and a main portion connected with side surfaces of the first and second pipe portions, defining, with a single member, a flow path through which the coolant flows, and cooling an object to be cooled.
摘要翻译：冷却套包括：冷却剂流过的第一和第二管部分; 以及与第一和第二管部分的侧表面连接的主要部分，其用单个构件限定冷却剂流过的流动路径，并冷却待冷却的物体。

9. 发明授权

US06787929B2 Semiconductor device having a flat protective adhesive sheet 失效
标题翻译：具有平坦的保护性粘合片的半导体装置
公开(公告)号：US06787929B2
公开(公告)日：2004-09-07
申请号：US09785464
申请日：2001-02-20
申请人： Shinji Yoshihara , Yasuo Souki , Kinya Atsumi , Hiroshi Muto
发明人： Shinji Yoshihara , Yasuo Souki , Kinya Atsumi , Hiroshi Muto
IPC分类号： H01L2329
CPC分类号： B81C1/00888 , B81C1/00896 , C09J7/385 , C09J2203/326 , C09J2423/006 , C09J2433/00 , H01L21/6836 , H01L2221/68327
摘要： A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.
摘要翻译：半导体器件具有其表面上具有感测部分的半导体晶片和附接到半导体晶片的粘合片作为保护盖以覆盖感测部分。粘合片由通常在粘合片的整个表面上设置的平坦粘合片和粘合剂构成。通过UV照射选择性地降低粘合剂的粘附性以具有粘合减少区域，并且粘合降低区域面对感测部分。可以以高生产率制造保护盖，并且在半导体晶片被切割并被输送时可靠地保护感测部分。

10. 发明授权

US06276207B1 Semiconductor physical quantity sensor having movable portion and fixed portion confronted each other and method of manufacturing the same 有权
标题翻译：具有可动部分和固定部分的半导体物理量传感器彼此面对并且其制造方法
公开(公告)号：US06276207B1
公开(公告)日：2001-08-21
申请号：US09438293
申请日：1999-11-12
申请人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
发明人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
IPC分类号： G01P1500
CPC分类号： B81C1/00928 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.
摘要翻译：一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。加速度传感器具有传感器部分和处理部分。传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。传感器部分通过沟槽与处理部分电绝缘。

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