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1. 发明授权

US08328937B2 Seed crystal axis for solution growth of single crystal 有权
标题翻译：晶晶轴用于单晶溶液生长
公开(公告)号：US08328937B2
公开(公告)日：2012-12-11
申请号：US12673011
申请日：2009-07-21
申请人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
发明人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
IPC分类号： C30B11/14
CPC分类号： C30B9/00 , C30B17/00 , C30B29/36 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068 , Y10T428/2918
摘要： A seed crystal axis used in a solution growth of single crystal production system is provided to prevent formation of polycrystals and grow a single crystal with a high growth rate. The seed crystal axis includes a seed crystal bonded to a seed crystal support member between which is interposed a laminated carbon sheet having a high thermal conductivity in a direction perpendicular to a solution surface of a solvent. The laminated carbon sheet includes a plurality of carbon thin films laminated with an adhesive or a plurality of pieces with differing lamination directions arranged in a lattice. Alternatively, a wound carbon sheet including a carbon strip wound concentrically from the center or a wound carbon sheet including a plurality of carbon strips with differing thicknesses which are wound and laminated from the center may be provided.
摘要翻译：提供用于单晶生产系统的溶液生长的晶种轴以防止多晶体的形成并以高生长速率生长单晶。种子晶轴包括结合到晶种支撑构件的晶种，其中在与溶剂的溶液表面垂直的方向上插入具有高热导率的层压碳片。层叠碳片包括层叠有粘合剂的多个碳薄膜或者具有以格子排列的不同层叠方向的多个片。或者，可以提供包括从中心同心卷绕的碳带的卷绕碳片或包括从中心卷绕并层压的多个厚度不同的碳带的卷绕碳片。

2. 发明授权

US09080254B2 Method of producing SiC single crystal 有权
标题翻译： SiC单晶的制备方法
公开(公告)号：US09080254B2
公开(公告)日：2015-07-14
申请号：US13202096
申请日：2010-03-11
申请人： Hidemitsu Sakamoto , Hironori Daikoku , Yasuyuki Fujiwara
发明人： Hidemitsu Sakamoto , Hironori Daikoku , Yasuyuki Fujiwara
IPC分类号： C30B15/30 , C30B29/36 , C30B9/06 , C30B17/00 , C30B19/04 , C30B15/32 , C30B15/10 , C30B9/10
CPC分类号： C30B29/36 , C30B9/06 , C30B9/10 , C30B15/10 , C30B15/30 , C30B15/305 , C30B15/32 , C30B17/00 , C30B19/04
摘要： In a method of producing a SiC single crystal, the SiC single crystal is grown on a SiC seed crystal by bringing the SiC seed crystal, which is fixed at a rotatable seed crystal fixing shaft, into contact with a solution produced by dissolving carbon in melt containing silicon in a rotatable crucible. The method includes starting rotation of the seed crystal fixing shaft, and starting rotation of the crucible after a predetermined delay time (Td); then stopping the rotation of the seed crystal fixing shaft and the rotation of the crucible simultaneously; then stopping the seed crystal fixing shaft and the crucible for a predetermined stop time (Ts); and repeating a rotation/stop cycle.
摘要翻译：在制造SiC单晶的方法中，通过将固定在可旋转晶种固定轴上的SiC晶种与通过将碳溶解在熔融物中而制成的溶液接触而将SiC单晶生长在SiC晶种上在可旋转坩埚中含硅。该方法包括开始晶种固定轴的旋转，并在预定的延迟时间（Td）之后开始坩埚的旋转。然后同时停止晶种固定轴的旋转和坩埚的旋转; 然后停止晶种固定轴和坩埚预定的停止时间（Ts）; 并重复旋转/停止循环。

3. 发明申请

US20120103251A1 SEED CRYSTAL AXIS FOR SOLUTION GROWTH OF SINGLE CRYSTAL 有权
标题翻译：用于单晶生长的SEED晶体轴
公开(公告)号：US20120103251A1
公开(公告)日：2012-05-03
申请号：US12673011
申请日：2009-07-21
申请人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
发明人： Hidemitsu Sakamoto , Yasuyuki Fujiwara
IPC分类号： C30B15/32 , B32B9/00
CPC分类号： C30B9/00 , C30B17/00 , C30B29/36 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068 , Y10T428/2918
摘要： PROBLEM To provide a seed crystal axis for solution growth of single crystal able to prevent or suppress formation of polycrystals due to the liquid phase technique and grow a single crystal with a high growth rate.MEANS A seed crystal axis used in a solution growth of single crystal production system, said seed crystal axis for solution growth of single crystal comprising a seed crystal bonded to a seed crystal support member between which is interposed a laminated carbon sheet having a high thermal conductivity in a direction perpendicular to a solution surface of a solvent and comprising a plurality of carbon thin films laminated with an adhesive, a laminated carbon sheet comprising a plurality of pieces with differing lamination directions arranged in a lattice, a wound carbon sheet comprising a carbon strip wound concentrically from the center, or a wound carbon sheet comprising a plurality of carbon strips with differing thicknesses which are wound and laminated from the center so that the closer to the outer periphery, the thicker.
摘要翻译：问题提供能够防止或抑制由于液相技术形成多晶体的单晶溶液生长的种晶轴，并生长具有高生长速率的单晶。意味着用于单晶生产系统的溶液生长的晶种轴，所述籽晶液晶轴用于溶液生长的单晶，其包含结合到晶种支撑构件的晶种，其中插入具有高热导率的层压碳片在垂直于溶剂的溶液表面的方向上并且包括多个层叠有粘合剂的碳薄膜，包括具有以格子排列的不同层压方向的多个片的层压碳片，包含碳带的卷绕碳片从中心同心地卷绕，或者包括从中心卷绕并层压的具有不同厚度的多个碳带的卷绕碳片，使得越靠近外周越厚。

4. 发明申请

US20110315073A1 METHOD OF PRODUCING SIC SINGLE CRYSTAL 有权
标题翻译：生产SIC单晶的方法
公开(公告)号：US20110315073A1
公开(公告)日：2011-12-29
申请号：US13202096
申请日：2010-03-11
申请人： Hidemitsu Sakamoto , Hironori Daikoku , Yasuyuki Fujiwara
发明人： Hidemitsu Sakamoto , Hironori Daikoku , Yasuyuki Fujiwara
IPC分类号： C30B15/30
CPC分类号： C30B29/36 , C30B9/06 , C30B9/10 , C30B15/10 , C30B15/30 , C30B15/305 , C30B15/32 , C30B17/00 , C30B19/04
摘要： In a method of producing an SiC single crystal, the SiC single crystal is grown on an SiC seed crystal by bringing the SiC seed crystal, which is fixed at a rotatable seed crystal fixing shaft, into contact with a solution produced by dissolving carbon in melt containing silicon in a rotatable crucible. The method includes starting rotation of the seed crystal fixing shaft, and starting rotation of the crucible after a predetermined delay time (Td); then stopping the rotation of the seed crystal fixing shaft and the rotation of the crucible simultaneously; then stopping the seed crystal fixing shaft and the crucible for a predetermined stop time (Ts); and repeating a rotation/stop cycle.
摘要翻译：在制造SiC单晶的方法中，通过将固定在可旋转晶种固定轴上的SiC晶种与通过将碳溶解在熔体中而制备的溶液接触而将SiC单晶生长在SiC晶种上在可旋转坩埚中含硅。该方法包括开始晶种固定轴的旋转，并在预定的延迟时间（Td）之后开始坩埚的旋转。然后同时停止晶种固定轴的旋转和坩埚的旋转; 然后停止晶种固定轴和坩埚预定的停止时间（Ts）; 并重复旋转/停止循环。

5. 发明申请

US20090194017A1 METHOD FOR PRODUCING p-TYPE SiC SEMICONDUCTOR SINGLE CRYSTAL 有权
标题翻译：生产p型SiC半导体单晶的方法
公开(公告)号：US20090194017A1
公开(公告)日：2009-08-06
申请号：US12366076
申请日：2009-02-05
申请人： Yukio TERASHIMA , Yasuyuki Fujiwara
发明人： Yukio TERASHIMA , Yasuyuki Fujiwara
IPC分类号： C30B19/04
CPC分类号： C30B29/36 , C30B17/00 , C30B19/02
摘要： A method for producing a p-type SiC semiconductor single crystal, including: using a solution in which C is dissolved in a Si melt and 30 to 70 at. % Cr and 0.1 to 20 at. % Al, based on a total weight of the Si melt, Cr, and Al, are added to the Si melt, to grow a p-type SiC semiconductor single crystal on a SiC single crystal substrate from the solution.
摘要翻译：一种p型SiC半导体单晶的制造方法，其特征在于，使用将C溶解在Si熔体中的溶液和30〜70at。％Cr和0.1〜20at。％Al，基于Si熔体的总重量，Cr和Al添加到Si熔体中，以从溶液中在SiC单晶衬底上生长p型SiC半导体单晶。

6. 发明申请

US20070287202A1 Method for Producing Nano-Scale Low-Dimensional Quantum Structure, and Method for Producing Integrated Circuit Using the Method for Producing the Structure 审中-公开
标题翻译：使用生产结构的方法生产纳米尺度的低维量子结构的方法和生产集成电路的方法
公开(公告)号：US20070287202A1
公开(公告)日：2007-12-13
申请号：US11660931
申请日：2005-08-30
申请人： Kenzo Maehashi , Yasuyuki Fujiwara , Koichi Inoue , Kazuhiko Matsumoto , Yasuhide Ohno
发明人： Kenzo Maehashi , Yasuyuki Fujiwara , Koichi Inoue , Kazuhiko Matsumoto , Yasuhide Ohno
IPC分类号： H01L21/71 , C25B5/00
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , C01B32/162 , H01L51/0048
摘要： A method of an embodiment of the present of the present application is for producing a nano-scale low dimensional quantum structure. The method includes: bringing a catalyst on a substrate into contact with vaporized carbon source, and emitting an electromagnetic wave to the catalyst so as to form single-walled carbon nano-tubes on the catalyst. As a result, it is possible to form the nano-scale low-dimensional quantum structure on a target area.
摘要翻译：本申请的本发明的实施方案的方法是用于生产纳米尺度的低维量子结构。该方法包括：使催化剂在基板上与汽化碳源接触，并向催化剂发射电磁波，从而在催化剂上形成单壁碳纳米管。结果，可以在目标区域上形成纳米级的低维量子结构。

7. 发明授权

US5918495A Multistage gear-rolling apparatus 失效
标题翻译：多级齿轮滚动装置
公开(公告)号：US5918495A
公开(公告)日：1999-07-06
申请号：US703014
申请日：1996-08-26
申请人： Noritaka Miyamoto , Masazumi Onishi , Yasuyuki Fujiwara , Toshiaki Tanaka , Shintaro Igarashi , Atsushi Danno , Kenichi Yamaguchi , Shinichi Nagamori
发明人： Noritaka Miyamoto , Masazumi Onishi , Yasuyuki Fujiwara , Toshiaki Tanaka , Shintaro Igarashi , Atsushi Danno , Kenichi Yamaguchi , Shinichi Nagamori
IPC分类号： B21H5/00 , B21H5/02 , B21H9/00 , B30B13/00
CPC分类号： B21H5/02 , B21H5/022
摘要： A multistage gear-rolling apparatus of the present invention comprises a roller squeezing apparatus including a roughing roller die and a finishing roller die disposed coaxially and connected in series in an axial direction of said roughing roller die. The roughing roller die is used for carrying out a hot rough-rolling step. The finishing roller die is used for a warm finish-rolling step. Thus, immediately after the hot rough-rolling step, the warm finish-rolling step can be carried out without a reset of workpiece.
摘要翻译：本发明的多级齿轮滚动装置包括一个辊挤压装置，该辊挤压装置包括同轴设置的粗轧辊模和精轧辊模，该粗模辊在模具的轴向方向上串联连接。粗轧辊模具用于进行热粗轧工序。精加工辊模具用于热精加工步骤。因此，在热粗轧工序之后，可以在不进行工件复位的情况下进行热精轧工序。

8. 发明授权

US08702864B2 Method for growing silicon carbide single crystal 有权
标题翻译：生长碳化硅单晶的方法
公开(公告)号：US08702864B2
公开(公告)日：2014-04-22
申请号：US12812613
申请日：2009-01-14
申请人： Yukio Terashima , Yasuyuki Fujiwara
发明人： Yukio Terashima , Yasuyuki Fujiwara
IPC分类号： C30B9/00
CPC分类号： C30B29/36 , C30B17/00
摘要： In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such that a proportion of Cr in a whole composition of the melt is in a range of 30 to 70 at. %, and a proportion of X in the whole composition of the melt is in a range of 0.5 at. % to 20 at. % in the case where X is Ce, or in a range of 1 at. % to 25 at. % in the case where X is Nd, and the silicon carbide single crystal is grown from the solution.
摘要翻译：在碳化硅单晶衬底上生长碳化硅单晶的方法中，通过使衬底与含有C的溶液接触，所述溶液通过将C溶解到含有Cr和X的熔体中，所述熔体包含至少一种Ce和Nd元素使得熔体的整个组成中的Cr的比例在30〜70at 3的范围内。％，并且熔体的整个组成中的X的比例在0.5at。的范围内。％至20 at。在X为Ce的情况下，或在1at的范围内。％至25点。在X为Nd的情况下，从溶液中生长碳化硅单晶。

9. 发明申请

US20110297893A1 PRODUCTION METHOD OF N-TYPE SIC SINGLE CRYSTAL, N-TYPE SIC SINGLE CRYSTAL OBTAINED THEREBY AND APPLICATION OF SAME 有权
标题翻译： N型SIC单晶，N型SIC单晶的生产方法及其应用
公开(公告)号：US20110297893A1
公开(公告)日：2011-12-08
申请号：US13201771
申请日：2010-02-18
申请人： Akinori Seki , Yasuyuki Fujiwara
发明人： Akinori Seki , Yasuyuki Fujiwara
IPC分类号： H01B1/04 , C30B9/00
CPC分类号： H01L29/7802 , C30B15/00 , C30B15/02 , C30B15/04 , C30B19/00 , C30B29/36 , H01L21/02529 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L29/1608 , H01L29/167 , H01L29/872
摘要： A method for producing n-type SiC single crystal, including: adding gallium and nitrogen, which is a donor element, for obtaining an n-type semiconductor during crystal growth of SiC single crystal, such that the amount of nitrogen as represented in atm unit is greater than the amount of gallium as represented in atm unit; an n-type SiC single crystal obtained according to this production method; and, a semiconductor device that includes the n-type SiC single crystal.
摘要翻译：一种制造n型SiC单晶的方法，包括：在SiC单晶的晶体生长期间，为了获得n型半导体，添加作为施主元素的镓和氮，使得以atm为单位表示的氮的量大于以atm为单位表示的镓的量; 根据该制造方法得到的n型SiC单晶; 以及包括n型SiC单晶的半导体器件。

10. 发明申请

US20090056834A1 HEAT TREATMENT OIL COMPOSITION 有权
标题翻译：热处理油组合物
公开(公告)号：US20090056834A1
公开(公告)日：2009-03-05
申请号：US11912436
申请日：2006-06-26
申请人： Masahiro Kobessho , Katsumi Ichitani , Makoto Takeishi , Yasuyuki Fujiwara , Yoshimi Aoyama
发明人： Masahiro Kobessho , Katsumi Ichitani , Makoto Takeishi , Yasuyuki Fujiwara , Yoshimi Aoyama
IPC分类号： B23K35/24
CPC分类号： C10M171/00 , C10M111/00 , C10M2203/003 , C10M2205/026 , C10M2219/044 , C10N2220/022 , C10N2220/031 , C10N2240/40 , C10N2240/402 , C10N2240/404 , C21D1/58 , C10N2210/02
摘要： The heat-treating oil composition of the present invention is characterized by comprising a mixed base oil containing a low-boiling base oil having a 5% distillation temperature of from 300 to 400° C. in an amount of not less than 5% by mass but less than 50% by mass, and a high-boiling base oil having a 5% distillation temperature of 500° C. or higher in an amount of more than 50% by mass but not more than 95% by mass. There is provided a quenching oil composition capable of exhibiting a less fluctuation in hardness or quenching distortion of a metal material treated therewith even when a large number of the metal materials are quenched therewith at the same time.
摘要翻译：本发明的热处理油组合物的特征在于，含有5质量％以上蒸馏温度为300〜400℃的低沸点基油的混合基础油为5质量％以上但小于50质量％，并且具有大于50质量％但不大于95质量％的5℃蒸馏温度为500℃以上的高沸点基油。提供了即使在大量金属材料同时淬火的情况下，也能够显示出处理金属材料的硬度或淬火变形波动较小的淬火油组合物。

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