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1. 发明授权

US5760439A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5760439A
公开(公告)日：1998-06-02
申请号：US806629
申请日：1997-02-26
申请人： Haruo Tanaka , Yukio Shakuda
发明人： Haruo Tanaka , Yukio Shakuda
IPC分类号： H01L21/8247 , G11C16/18 , H01L27/115 , H01L27/15 , H01L29/788 , H01L29/792 , H01L31/167 , H01L33/32 , H01L33/56
CPC分类号： G11C16/18 , H01L31/167 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247
摘要： A semiconductor memory device in which a stored information can be simply erased only by an electric signal so as to be rewritten is provided. The semiconductor memory device includes: (a) a semiconductor chip having an array of memory cells, stored information in the memory cells being erasable by light irradiation; (b) a light emitting element irradiating a light into the memory cells portion of the semiconductor chip; and (c) a package in which the semiconductor chip and the light emitting element are encapsulated with a resin in one body.
摘要翻译：提供了一种半导体存储器件，其中可以仅通过电信号简单地擦除存储的信息以便被重写。半导体存储器件包括：（a）具有存储单元阵列的半导体芯片，存储单元中存储的信息可通过光照射而被擦除; （b）向所述半导体芯片的存储单元部分照射光的发光元件; 和（c）半导体芯片和发光元件用树脂封装在一体内的封装。

2. 发明授权

US06274891B1 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06274891B1
公开(公告)日：2001-08-14
申请号：US09392459
申请日：1999-09-09
申请人： Haruo Tanaka , Yukio Shakuda
发明人： Haruo Tanaka , Yukio Shakuda
IPC分类号： H01L3300
CPC分类号： H01S5/32325 , H01S5/026 , H01S5/0267 , H01S5/042 , H01S5/0654 , H01S5/0683 , H01S5/1064 , H01S5/1085 , H01S5/18 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2219 , H01S5/2231 , H01S5/32341
摘要： In a semiconductor laser which uses a semiconductor of GaN type compound, an optimism material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.
摘要翻译：在使用GaN型化合物的半导体的半导体激光器中，使用乐观材料作为电流阻挡层，从而可以获得满足高发光效率或折射率的增益导引结构的半导体激光器引导结构或两者，从而有助于控制振荡光的噪声（降低噪声），控制光在横向方向的扩展以及纵向模式的控制。

3. 发明授权

US06298079B1 Gallium nitride type laser for emitting blue light 失效
标题翻译：用于发射蓝光的氮化镓型激光器
公开(公告)号：US06298079B1
公开(公告)日：2001-10-02
申请号：US09392456
申请日：1999-09-09
申请人： Haruo Tanaka , Yukio Shakuda
发明人： Haruo Tanaka , Yukio Shakuda
IPC分类号： H01S500
CPC分类号： H01S5/32325 , H01S5/026 , H01S5/0267 , H01S5/042 , H01S5/0654 , H01S5/0683 , H01S5/1064 , H01S5/1085 , H01S5/18 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2219 , H01S5/2231 , H01S5/32341
摘要： In a semiconductor laser which uses a semiconductor of GaN type compound, an optimum material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.
摘要翻译：在使用GaN型化合物的半导体的半导体激光器中，将最佳材料用于电流阻挡层，使得可以获得满足高发光效率或折射率的增益导引结构的半导体激光器引导结构或两者，从而有助于控制振荡光的噪声（降低噪声），控制光在横向上的扩展以及纵向模式的控制。

4. 发明授权

US5974069A Semiconductor laser and manufacturing method thereof 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5974069A
公开(公告)日：1999-10-26
申请号：US892273
申请日：1997-07-14
申请人： Haruo Tanaka , Yukio Shakuda
发明人： Haruo Tanaka , Yukio Shakuda
IPC分类号： H01L33/00 , H01S5/10 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32325 , H01S5/2231 , H01S5/026 , H01S5/0267 , H01S5/042 , H01S5/0654 , H01S5/0683 , H01S5/1064 , H01S5/1085 , H01S5/18 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2219 , H01S5/32341
摘要： In a semiconductor laser which uses a semiconductor of GaN type compound, an optimum material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.
摘要翻译：在使用GaN型化合物的半导体的半导体激光器中，将最佳材料用于电流阻挡层，使得可以获得满足高发光效率或折射率的增益导引结构的半导体激光器引导结构或两者，从而有助于控制振荡光的噪声（降低噪声），控制光在横向上的扩展以及纵向模式的控制。

5. 发明授权

US5940684A Method and equipment for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法和设备
公开(公告)号：US5940684A
公开(公告)日：1999-08-17
申请号：US859704
申请日：1997-05-21
申请人： Yukio Shakuda , Haruo Tanaka
发明人： Yukio Shakuda , Haruo Tanaka
IPC分类号： H01L21/00 , H01L21/02 , H01L21/203 , H01L21/205 , H01S5/00 , H01S5/323
CPC分类号： H01L21/6719 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/67207 , H01L33/007
摘要： By (a) performing a first treatment process to a substrate in a first apparatus, (b) moving the substrate having undergone the first treatment process into an airtight passage communicating with the first apparatus and shut off from outside and thereafter, shutting off the communication between the passage and the first apparatus, (c) setting the passage to communicate with a second apparatus to move the substrate into the second apparatus, and (d) performing a second treatment process in the second apparatus, the treatment processes are performed in treatment apparatuses suitable therefor without the substrate being exposed to the outside air. As a result, the time between the treatment processes is reduced and the availability ratio of the expensive equipment is improved.
摘要翻译：通过（a）在第一装置中对基板执行第一处理处理，（b）将经过第一处理处理的基板移动到与第一装置通信的气密通道中，并且从外部切断，然后关闭通信在通道和第一设备之间，（c）设置通道与第二设备连通以将基板移动到第二设备中，以及（d）在第二设备中执行第二处理过程，处理过程在处理适合的设备，而不会使基板暴露于外部空气。结果，减少了处理过程之间的时间并提高了昂贵设备的可利用率。

6. 发明授权

US6121656A Semiconductor memory device mounted with a light emitting device 失效
标题翻译：安装有发光器件的半导体存储器件
公开(公告)号：US6121656A
公开(公告)日：2000-09-19
申请号：US964828
申请日：1997-11-05
申请人： Haruo Tanaka , Yukio Shakuda
发明人： Haruo Tanaka , Yukio Shakuda
IPC分类号： H01L21/8247 , G11C16/18 , H01L27/115 , H01L27/15 , H01L29/788 , H01L29/792 , H01L31/167 , H01L33/32 , H01L33/56 , H07L29/788
CPC分类号： G11C16/18 , H01L31/167 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247
摘要： A semiconductor memory device in which a stored information can be simply erased only by an electric signal so as to be rewritten is provided. The semiconductor memory device includes (a) a semiconductor chip having an array of memory cells, stored information in the memory cells being erasable by light irradiation; (b) a light emitting element irradiating a light into the memory cells portion of the semiconductor chip; and (c) a package in which the semiconductor chip and the light emitting element are encapsulated with a resin in one body.
摘要翻译：提供了一种半导体存储器件，其中可以仅通过电信号简单地擦除存储的信息以便被重写。半导体存储器件包括（a）具有存储单元阵列的半导体芯片，存储单元中存储的信息可通过光照射而被擦除; （b）向所述半导体芯片的存储单元部分照射光的发光元件; 和（c）半导体芯片和发光元件用树脂封装在一体内的封装。

7. 发明申请

US20090101023A1 FRYER 有权
标题翻译：弗雷尔
公开(公告)号：US20090101023A1
公开(公告)日：2009-04-23
申请号：US12065969
申请日：2007-04-03
申请人： Takao Kimura , Haruo Tanaka , Koji Yamada
发明人： Takao Kimura , Haruo Tanaka , Koji Yamada
IPC分类号： A47J27/62 , A47J37/12
CPC分类号： A47J37/1223
摘要： A fryer is provided which, during a standby for cooking, can keep the temperature of a cooking oil slightly lower than a cooking temperature and, during cooking, can quickly raise the oil temperature to the cooking temperature. The fryer also has capabilities of easily performing a heat exchange operation on the cooking oil, preventing degradation of the cooking oil, securing a good kitchen environment and enhancing a work efficiency. The fryer comprises a fryer tank having oil and water for cleaning the oil stored in two layers one upon the other; and a heater installed in the oil layer; wherein the water in the water layer is drawn out from a water suction opening at a bottom of fryer tank, cleaned by a filtering water tank and then delivered into the fryer tank almost horizontally in an off-centered direction from a water supply opening formed in a lower, side wall of the fryer tank, thus rotating the water in the fryer tank in a swirl. The fryer also has a device for discharging impurities collected in the filtering water tank.
摘要翻译：提供了一种油炸锅，在待烹饪过程中，烹饪油的温度可以保持烹调温度略低于烹调温度，并且在烹饪过程中可以将油温迅速提高到烹调温度。油炸锅还具有容易地对烹饪油进行热交换操作的能力，防止烹饪油的劣化，确保良好的厨房环境并提高工作效率。油炸锅包括具有油和水的油炸锅，用于清洁彼此分开存储的两层油; 和安装在油层中的加热器; 其中水层中的水从油炸锅底部的吸水口被抽出，用过滤水箱清洗，然后以不对中的方式从形成在油底壳的下侧壁，因此以旋转方式旋转油炸锅中的水。炸锅还具有用于排出收集在过滤水箱中的杂质的装置。

8. 发明申请

US20080254507A1 Anti-Hiv Drug, Polypeptide Constituting the Same, Gene Encoding the Polypeptide and Method of Producing the Anti-Hiv Drug 审中-公开
标题翻译：构建其的抗-HIV药物，多肽，编码多肽的基因及产生抗-HIV药物的方法
公开(公告)号：US20080254507A1
公开(公告)日：2008-10-16
申请号：US11791862
申请日：2005-11-30
申请人： Haruo Tanaka , Junji Inokoshi , Satoshi Omura
发明人： Haruo Tanaka , Junji Inokoshi , Satoshi Omura
IPC分类号： C12P21/00 , C07K14/00 , C07H21/00 , C12N1/21
CPC分类号： C07K14/36 , A61K38/00
摘要： It is intended to provide an anti-HIV drug characterized by containing multimeric actinohivin, a polypeptide which is multimeric actinohivin; a gene encoding the same; and a method of producing the anti-HIV drug. The anti-HIV drug inhibits the synctium formation and has an enhanced effect
摘要翻译：旨在提供一种抗HIV药物，其特征在于含有多聚肌动蛋白，多聚肌动蛋白多肽; 编码该基因的基因; 以及产生抗HIV药物的方法。抗艾滋病毒药物可以抑制游离体的形成并具有增强的作用

9. 发明授权

US06856637B2 Optical transmitter having photodiode 失效
标题翻译：具有光电二极管的光发射机
公开(公告)号：US06856637B2
公开(公告)日：2005-02-15
申请号：US10247167
申请日：2002-09-19
申请人： Masahiko Tsumori , Haruo Tanaka , Tomohiro Yamazaki
发明人： Masahiko Tsumori , Haruo Tanaka , Tomohiro Yamazaki
IPC分类号： H01S5/00 , H01S5/022 , H01S3/13 , H01S3/00 , H01S3/08
CPC分类号： H04B10/501 , H01S5/02252 , H01S5/0683
摘要： An optical transmitter is equipped with a laser diode and a light detector provided on a packaging base, in which the light detector has a semiconductor substrate side arranged on a packaging base side, a semiconductor junction plane, a side surface which is roughly orthogonal to the semiconductor junction plane, and a facing surface which faces the side surface, wherein the facing surface is partially or completely inclined to reflect the output light from the laser diode incident from the side surface to the semiconductor junction plane of the light detector.
摘要翻译：光发射机配备有激光二极管和设置在封装基座上的光检测器，其中光检测器具有布置在封装基座侧的半导体衬底侧，半导体接合面，大致与半导体结面和面对侧面的面对面，其中所述面对部分或完全倾斜以反射从所述光检测器的侧表面入射到所述半导体结面的激光二极管的输出光。

10. 发明授权

US06815733B2 Switching element and method of making the same 失效
标题翻译：开关元件及其制作方法
公开(公告)号：US06815733B2
公开(公告)日：2004-11-09
申请号：US10392278
申请日：2003-03-19
申请人： Haruo Tanaka , Chihaya Adachi , Takahito Oyamada , Hiroyuki Sasabe
发明人： Haruo Tanaka , Chihaya Adachi , Takahito Oyamada , Hiroyuki Sasabe
IPC分类号： H01L2974
CPC分类号： H01L51/0051 , H01L27/28 , H01L51/0084
摘要： The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state. Thereafter, the switching layer maintains the high-resistance state when the applied voltage decreases beyond the second threshold value.

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