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1. 发明授权

US5641581A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5641581A
公开(公告)日：1997-06-24
申请号：US411994
申请日：1995-03-28
申请人： Yukio Nishiyama , Rempei Nakata , Nobuo Hayasaka , Haruo Okano , Riichirou Aoki , Takahito Nagamatsu , Akemi Satoh , Masao Toyosaki , Hitoshi Ito
发明人： Yukio Nishiyama , Rempei Nakata , Nobuo Hayasaka , Haruo Okano , Riichirou Aoki , Takahito Nagamatsu , Akemi Satoh , Masao Toyosaki , Hitoshi Ito
IPC分类号： C23C16/40 , H01L21/31 , H01L21/311 , H01L21/316 , H01L21/768 , H01L23/532 , B32B9/00
CPC分类号： H01L21/02274 , H01L21/02131 , H01L21/0214 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/31111 , H01L21/31625 , H01L21/31629 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002
摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4, P.ltoreq.10.sup.-1.times.10.sup.-E/45( A)and the relationship between the ion energy E (eV) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11.times.10.sup.-E/45, 10 .ltoreq.E(B)
摘要翻译：公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 4，P <= 10-1×10-E / 45（A），离子能E（eV）与等离子体密度D（/ cm 3）之间的关系满足以下公式B：D> / = 2x1011×10-E / 45,10（E）（B）

2. 发明授权

US5429995A Method of manufacturing silicon oxide film containing fluorine 失效
标题翻译：制造含氟的氧化硅膜的方法
公开(公告)号：US5429995A
公开(公告)日：1995-07-04
申请号：US94423
申请日：1993-07-16
申请人： Yukio Nishiyama , Rempei Nakata , Nobuo Hayasaka , Haruo Okano , Riichirou Aoki , Takahito Nagamatsu , Akemi Satoh , Masao Toyosaki , Hitoshi Ito
发明人： Yukio Nishiyama , Rempei Nakata , Nobuo Hayasaka , Haruo Okano , Riichirou Aoki , Takahito Nagamatsu , Akemi Satoh , Masao Toyosaki , Hitoshi Ito
IPC分类号： C23C16/40 , H01L21/31 , H01L21/311 , H01L21/316 , H01L21/768 , H01L23/532 , H01L21/02
CPC分类号： H01L21/02274 , H01L21/02131 , H01L21/0214 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/31111 , H01L21/31625 , H01L21/31629 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002
摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.E(B)
摘要翻译：公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 如图4所示，P / = 2x1011×10-E / 45,10（E）（B）

3. 发明授权

US5607718A Polishing method and polishing apparatus 失效
标题翻译：抛光方法和抛光装置
公开(公告)号：US5607718A
公开(公告)日：1997-03-04
申请号：US300127
申请日：1994-09-02
申请人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
发明人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
IPC分类号： B24B37/015 , B24B49/14 , B24B57/02 , H01L21/02 , H01L21/321 , H01L21/3213 , H01L21/768 , B05D5/12 , C03C15/00 , H01L21/465
CPC分类号： B24B37/015 , B24B57/02 , H01L21/02074 , H01L21/3212 , H01L21/3213 , H01L21/7684
摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.
摘要翻译：本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管，抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度代理商

4. 发明授权

US5775980A Polishing method and polishing apparatus 失效
标题翻译：抛光方法和抛光装置
公开(公告)号：US5775980A
公开(公告)日：1998-07-07
申请号：US743044
申请日：1996-11-04
申请人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
发明人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
IPC分类号： B24B37/015 , B24B49/14 , B24B57/02 , H01L21/02 , H01L21/321 , H01L21/3213 , H01L21/768 , B24B5/00
CPC分类号： B24B37/015 , B24B57/02 , H01L21/02074 , H01L21/3212 , H01L21/3213 , H01L21/7684
摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.
摘要翻译：本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管，抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度代理商

5. 发明授权

US06566261B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06566261B2
公开(公告)日：2003-05-20
申请号：US09946601
申请日：2001-09-06
申请人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
发明人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
IPC分类号： H01L2144
CPC分类号： H01L23/53238 , H01L21/0217 , H01L21/02274 , H01L21/02307 , H01L21/02315 , H01L21/3122 , H01L21/76838 , H01L24/11 , H01L2224/13099 , H01L2224/45144 , H01L2224/45147 , H01L2924/00011 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105 , Y10S438/959 , H01L2924/00 , H01L2924/01005 , H01L2924/01004 , H01L2924/00014
摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

6. 发明授权

US5664989A Polishing pad, polishing apparatus and polishing method 失效
标题翻译：抛光垫，抛光装置和抛光方法
公开(公告)号：US5664989A
公开(公告)日：1997-09-09
申请号：US683265
申请日：1996-07-18
申请人： Rempei Nakata , Hisashi Kaneko , Nobuo Hayasaka , Takeshi Nishioka , Yoshikuni Tateyama , Yutaka Nakano , Yasutaka Sasaki
发明人： Rempei Nakata , Hisashi Kaneko , Nobuo Hayasaka , Takeshi Nishioka , Yoshikuni Tateyama , Yutaka Nakano , Yasutaka Sasaki
IPC分类号： B24B37/20 , B24B37/22 , B24B37/24 , B24D13/14 , C08J5/14 , H01L21/304 , B24B1/00
CPC分类号： B24B37/22
摘要： A polishing pad comprises at least a first layer having a first main surface serving to polish a substrate to be polished and a second main surface, and a second layer positioned to face the second main surface of the first layer and having fine bags arranged therein, fluid being hermetically sealed in the fine bag.
摘要翻译：抛光垫至少包括具有用于抛光待抛光基板的第一主表面和第二主表面的第一层，以及设置成面对第一层的第二主表面并且具有布置在其中的细小袋的第二层，流体密封在细袋中。

7. 发明授权

US06828684B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06828684B2
公开(公告)日：2004-12-07
申请号：US10392967
申请日：2003-03-21
申请人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
发明人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
IPC分类号： H01L2348
CPC分类号： H01L23/53238 , H01L21/0217 , H01L21/02274 , H01L21/02307 , H01L21/02315 , H01L21/3122 , H01L21/76838 , H01L24/11 , H01L2224/13099 , H01L2224/45144 , H01L2224/45147 , H01L2924/00011 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105 , Y10S438/959 , H01L2924/00 , H01L2924/01005 , H01L2924/01004 , H01L2924/00014
摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.
摘要翻译：提供一种半导体器件，其包括半导体衬底和在半导体衬底之上的导电层，其中导电层包含铜，导电层的表面区域包含CH键和CC键中的至少一个，并且总量C 形成CH键的原子和在表面区域中形成CC键的C原子在表面区域中的元素的总量为30原子％以上。

8. 发明授权

US6096631A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6096631A
公开(公告)日：2000-08-01
申请号：US081010
申请日：1998-05-19
申请人： Kenro Nakamura , Rempei Nakata , Yusuke Kohyama , Nobuo Hayasaka
发明人： Kenro Nakamura , Rempei Nakata , Yusuke Kohyama , Nobuo Hayasaka
IPC分类号： H01L21/3205 , H01L21/304 , H01L21/321 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76877 , H01L21/3212 , H01L21/7684
摘要： The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a first film on an entire surface of a substrate having a recessed portion, including a bottom surface and a side wall of the recessed portion, without completely filling the recessed portion, forming a second film on an entire surface of the first film such that the recessed portion, on the bottom surface and the side wall of which the first film is formed, is completely filled, and polishing the first and second films by a chemical-mechanical polishing method such that the substrate is exposed and the first and second films in the recessed portion remain.
摘要翻译：本发明提供一种制造半导体器件的方法，包括以下步骤：在具有凹部的基板的整个表面上形成第一膜，该凹部包括凹部的底面和侧壁，而不完全填充凹部在所述第一膜的整个表面上形成第二膜，使得形成所述第一膜的所述底面和所述第一膜的所述侧壁上的凹部被完全填充，并且通过化学品对所述第一膜和所述第二膜进行抛光 - 机械抛光方法，使得基板被暴露，并且凹部中的第一和第二膜保留。

9. 发明授权

US06224464B1 Polishing method and polisher used in the method 失效
标题翻译：该方法中使用的抛光方法和抛光机
公开(公告)号：US06224464B1
公开(公告)日：2001-05-01
申请号：US08763342
申请日：1996-12-11
申请人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
发明人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
IPC分类号： B24B100
CPC分类号： C09G1/02 , H01L21/31053
摘要： According to the present invention, there is provided a polishing method having the steps of forming a film to be polished, having a depressed portion and a protruding portion on a surface of a substrate, and polishing the film to be polished by relatively moving the substrate and a polishing table, while pressing the substrate having the film to be polished, onto a polishing cloth of the polishing table and supplying a polishing solution containing polishing grains, between the film to be polished and the polishing cloth, wherein an organic compound having a molecular weight of 100 or more, and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) is added to the polishing solution. Further, there are provided a polishing solution in which polishing grains are dispersed into a dispersion medium, and a polishing agent containing an organic compound having a molecular weight of 100 or more and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) added to the polishing solution.
摘要翻译：根据本发明，提供了一种抛光方法，其具有以下步骤：在基板的表面上形成具有凹陷部分和突出部分的待抛光膜，并且通过相对移动基板来抛光待抛光的膜以及研磨台，在将要研磨的膜的基板按压到研磨台的抛光布上，并在待抛光的薄膜和抛光布之间提供含有抛光颗粒的抛光液，其中具有分子量为100以上，并且含有至少一个选自COOM1的亲水基团（M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基基团）和SO 3 M 2（M2表示当被羧基的氢原子取代时可以形成盐的原子或官能团）加入到抛光溶胶。此外，提供了将研磨粒分散在分散介质中的研磨液，以及含有分子量为100以上且含有至少一个亲水性基团的研磨剂，所述亲水性基团选自COOM1（ M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基）和SO 3 M 2（M 2表示当被取代时可以形成盐的原子或官能团加入到抛光溶液中的羧基的氢原子）。

10. 发明授权

US06746969B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06746969B2
公开(公告)日：2004-06-08
申请号：US09982003
申请日：2001-10-19
申请人： Miyoko Shimada , Hideshi Miyajima , Rempei Nakata , Hideto Matsuyama , Katsuya Okumura , Masahiko Hasunuma , Nobuo Hayasaka
发明人： Miyoko Shimada , Hideshi Miyajima , Rempei Nakata , Hideto Matsuyama , Katsuya Okumura , Masahiko Hasunuma , Nobuo Hayasaka
IPC分类号： H01L2131
CPC分类号： H01L21/02351 , H01L21/02126 , H01L21/02137 , H01L21/02312 , H01L21/02337 , H01L21/2636 , H01L21/3122 , H01L21/316 , H01L21/76825 , H01L21/76828 , H01L21/76834
摘要： A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.
摘要翻译：一种制造半导体器件的方法包括：准备待处理的衬底，以及在衬底上方形成绝缘膜，该绝缘膜包括在衬底上施加绝缘膜原料，所述绝缘膜原料包括物质或物质的前体所述绝缘膜包含该物质，通过在反应器室中加热基板同时在基板上照射电子束来固化绝缘膜原料，改变选自反应器室中的压力，温度的基板，当电子束被照射在基板上时，具有暴露于其中的基板的气体类型，引入反应室的气体流量，基板的位置和每单位时间入射到基板的电子量。

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