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1. 发明授权

US09466477B2 Method of manufacturing semiconductor device, substrate processing apparatus, and semiconductor device 有权
标题翻译：制造半导体器件，衬底处理设备和半导体器件的方法
公开(公告)号：US09466477B2
公开(公告)日：2016-10-11
申请号：US12849398
申请日：2010-08-03
申请人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
发明人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
IPC分类号： H01L21/02 , C23C16/34 , C23C16/455 , C23C16/52 , H01L21/285
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45523 , C23C16/45544 , C23C16/45563 , C23C16/52 , H01L21/02104 , H01L21/02172 , H01L21/02225 , H01L21/02263 , H01L21/02271 , H01L21/28506
摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
摘要翻译：提供了制造半导体器件，衬底处理设备和半导体器件的方法。该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。

2. 发明授权

US09045825B2 Method of forming metal-containing film 有权
标题翻译：形成含金属膜的方法
公开(公告)号：US09045825B2
公开(公告)日：2015-06-02
申请号：US13398523
申请日：2012-02-16
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
IPC分类号： C23C16/34 , C23C16/40 , C23C16/455 , H01L21/02 , C23C16/30 , C23C16/54 , H01L21/285
CPC分类号： C23C16/45544 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45523 , C23C16/45527 , C23C16/45531 , C23C16/45561 , C23C16/45578 , C23C16/52 , C23C16/54 , H01L21/02172 , H01L21/0228 , H01L21/02697 , H01L21/28562
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate.
摘要翻译：提供了与现有技术相比能够增加要形成的膜的功函数的半导体器件制造方法和衬底处理装置。一种循环，包括（a）将含金属的气体供给到容纳基板的处理室中（b）向处理室供应含氮气体; 和（c）向处理室供给含氧气体，含卤素气体及其组合中的一种，进行多次以在基板上形成含金属膜。

3. 发明授权

US08691708B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08691708B2
公开(公告)日：2014-04-08
申请号：US13012320
申请日：2011-01-24
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
IPC分类号： H01L21/31
CPC分类号： H01L21/32051 , C23C16/34 , C23C16/45523 , C23C16/45574 , H01L21/28556 , H01L21/28562
摘要： A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film at a higher film-forming rate. The method includes loading a substrate into a processing chamber; simultaneously starting a supply of a first processing gas and a second processing gas to form a film on the substrate, simultaneously stopping the supply of the first and second processing gas; removing the remaining first and second processing gas from the processing chamber; supplying the second processing gas into the processing chamber without supplying the first processing gas; removing the second processing gas starting and then stopping a supply of the first processing gas into the processing chamber without supplying the second processing gas; removing the first processing gas; and unloading the substrate from the processing chamber.
摘要翻译：一种制造半导体器件的方法和能够以更高的成膜速度提供TiN膜的衬底处理设备。该方法包括将衬底加载到处理室中; 同时开始供应第一处理气体和第二处理气体以在基板上形成膜，同时停止供应第一和第二处理气体; 从处理室中除去剩余的第一和第二处理气体; 在不提供第一处理气体的情况下将第二处理气体供应到处理室中; 除去所述第二处理气体，然后停止将所述第一处理气体供给到所述处理室中，而不供给所述第二处理气体; 去除第一处理气体; 并从处理室卸载基板。

4. 发明申请

US20110031593A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法，衬底处理装置和半导体器件
公开(公告)号：US20110031593A1
公开(公告)日：2011-02-10
申请号：US12849398
申请日：2010-08-03
申请人： Tatsuyuki SAITO , Masanori SAKAI , Yukinao KAGA , Takashi Yokogawa
发明人： Tatsuyuki SAITO , Masanori SAKAI , Yukinao KAGA , Takashi Yokogawa
IPC分类号： H01L23/58 , H01L21/469 , H01L21/443
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45523 , C23C16/45544 , C23C16/45563 , C23C16/52 , H01L21/02104 , H01L21/02172 , H01L21/02225 , H01L21/02263 , H01L21/02271 , H01L21/28506
摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
摘要翻译：提供了制造半导体器件，衬底处理设备和半导体器件的方法。该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。

5. 发明授权

US09238257B2 Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，清洗方法以及基板处理装置
公开(公告)号：US09238257B2
公开(公告)日：2016-01-19
申请号：US12862180
申请日：2010-08-24
申请人： Masanori Sakai , Yukinao Kaga , Takashi Yokogawa , Tatsuyuki Saito
发明人： Masanori Sakai , Yukinao Kaga , Takashi Yokogawa , Tatsuyuki Saito
IPC分类号： H01L21/00 , B08B7/00 , H01L21/67 , C23C16/44 , H01L21/285
CPC分类号： B08B7/00 , C23C16/4404 , C23C16/4405 , H01L21/28562 , H01L21/67028
摘要： It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.
摘要翻译：可以有效地除去附着在处理室的内壁和设置在处理室中的基板支撑工具等部分的导电膜或绝缘膜等沉积材料。提供了制造半导体器件的方法。该方法包括：将基板装载到处理室中; 通过将多个源气体供应到所述处理室中，在所述基板上形成导电膜或绝缘膜; 从处理室卸载基板; 以及通过向所述处理室供应修饰气体来修饰粘附到所述处理室的导电膜或绝缘膜。在进行加载循环之后，多次进行成形，卸载和修改处理，通过将清洁气体供给到处理室中而将附着到处理室的改性导电膜或改性绝缘膜从处理室中除去处理室。

6. 发明授权

US08808455B2 Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08808455B2
公开(公告)日：2014-08-19
申请号：US13014419
申请日：2011-01-26
申请人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
发明人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
IPC分类号： C23C16/455 , C23C16/52 , C23C16/00 , H01L21/00 , H01L21/02 , C23C16/30 , H01L23/482 , H01L21/3205
CPC分类号： C23C16/455 , C23C16/301 , C23C16/303 , C23C16/45578 , C23C16/52 , H01L21/00 , H01L21/02186 , H01L21/3205 , H01L23/482 , H01L2924/0002 , H01L2924/00
摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates.
摘要翻译：本发明提供一种能够形成导电膜的基板处理装置和半导体装置的制造方法，所述半导体装置在较高的成膜速率下能够形成致密的导电膜，其包含低浓度源源杂质并具有低电阻率。基板处理装置包括：处理室，被配置为堆叠并容纳多个基板; 第一处理气体供应系统，被配置为将第一处理气体供应到所述处理室中; 第二处理气体供应系统，被配置为将第二处理气体供应到所述处理室中; 以及控制单元，被配置为控制第一处理气体供应系统和第二处理气体供应系统。这里，第一处理气体供给系统和第二处理气体供给系统中的至少一个包括沿基板的堆叠方向垂直配置的两个喷嘴，并且具有不同的形状，并且控制单元被配置为提供至少一个当通过在具有不同成膜速率的脉冲下将第一处理气体和第二处理气体供应到处理室中时，通过具有不同形状的两个喷嘴将第一处理气体和第二处理气体输送到处理室中，。

7. 发明申请

US20120214300A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件制造方法和基板处理装置
公开(公告)号：US20120214300A1
公开(公告)日：2012-08-23
申请号：US13398523
申请日：2012-02-16
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
IPC分类号： H01L21/28
CPC分类号： C23C16/45544 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45523 , C23C16/45527 , C23C16/45531 , C23C16/45561 , C23C16/45578 , C23C16/52 , C23C16/54 , H01L21/02172 , H01L21/0228 , H01L21/02697 , H01L21/28562
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate.
摘要翻译：提供了与现有技术相比能够增加要形成的膜的功函数的半导体器件制造方法和衬底处理装置。一种循环，包括（a）将含金属的气体供给到容纳基板的处理室中（b）向处理室供应含氮气体; 和（c）向处理室供给含氧气体，含卤素气体及其组合中的一种，进行多次以在基板上形成含金属膜。

8. 发明申请

US20110290182A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：制造半导体器件的方法，清洁方法和基板处理装置
公开(公告)号：US20110290182A1
公开(公告)日：2011-12-01
申请号：US13207591
申请日：2011-08-11
申请人： Masanori SAKAI , Yukinao Kaga , Takashi Yokogawa , Tatsuyuki Saito
发明人： Masanori SAKAI , Yukinao Kaga , Takashi Yokogawa , Tatsuyuki Saito
IPC分类号： C23C16/34 , H01L21/00 , C23C16/52
CPC分类号： B08B7/00 , C23C16/4404 , C23C16/4405 , H01L21/28562 , H01L21/67028
摘要： It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.
摘要翻译：可以有效地除去附着在处理室的内壁和设置在处理室中的基板支撑工具等部分的导电膜或绝缘膜等沉积材料。提供了制造半导体器件的方法。该方法包括：将基板装载到处理室中; 通过将多个源气体供应到所述处理室中，在所述基板上形成导电膜或绝缘膜; 从处理室卸载基板; 以及通过向所述处理室供应修饰气体来修饰粘附到所述处理室的导电膜或绝缘膜。在进行加载循环之后，多次进行成形，卸载和修改处理，通过将清洁气体供给到处理室中而将附着到处理室的改性导电膜或改性绝缘膜从处理室中除去处理室。

9. 发明申请

US20080135516A1 Substrate treatment device 审中-公开
标题翻译：底物处理装置
公开(公告)号：US20080135516A1
公开(公告)日：2008-06-12
申请号：US11979816
申请日：2007-11-08
申请人： Takashi Yokogawa , Yasuhiro Inokuchi , Katsuhiko Yamamoto , Yoshiaki Hashiba , Yasuhiro Ogawa
发明人： Takashi Yokogawa , Yasuhiro Inokuchi , Katsuhiko Yamamoto , Yoshiaki Hashiba , Yasuhiro Ogawa
IPC分类号： B44C1/22 , C23C16/00
CPC分类号： C23C16/24 , C23C16/22 , C30B25/08 , C30B25/14 , C30B29/06 , C30B35/00
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译：旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括：用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。

10. 发明申请

US20090023139A1 Method For Site-Specifically Introducing Non-Natural Amino Acid Into Protien Using Mitochondrial Protein and Method For Effectively Preparing Trna 审中-公开
标题翻译：使用线粒体蛋白将非天然氨基酸引入Protien的方法及有效制备Trna的方法
公开(公告)号：US20090023139A1
公开(公告)日：2009-01-22
申请号：US11791150
申请日：2005-11-22
申请人： Kazuya Nishikawa , Takashi Yokogawa , Satoshi Ohno
发明人： Kazuya Nishikawa , Takashi Yokogawa , Satoshi Ohno
IPC分类号： C12Q1/68 , C12P21/06 , C12N9/10 , C07H21/04 , C07K16/00
CPC分类号： C12P21/02 , C12N9/93 , C12P19/34
摘要： This invention is intended to provide a protein synthesis system used for producing a tryptophan analogue-containing non-natural-amino-acid-containing protein that satisfies the following conditions: (i) tRNA that transfers a non-natural amino acid is not recognized by an endogenous aminoacyl tRNA synthetase (aaRS); (ii) it is recognized selectively by aaRS exclusive for a non-natural amino acid; and (iii) endogenous tRNA is not recognized by aaRS exclusive for a non-natural amino acid. In the eukaryotic organism-derived cell-free protein synthesis system, a yeast mitochondrial tryptophanyl tRNA synthetase is used in combination with mitochondrial tRNATrp (mt tRNATrp).
摘要翻译：本发明旨在提供一种蛋白质合成系统，其用于制备含有色氨酸类似物的含有非天然氨基酸的蛋白质，其满足以下条件：（i）转移非天然氨基酸的tRNA不被内源氨酰tRNA合成酶（aaRS）; （ii）aaRS选择性地被非天然氨基酸所独占; 和（iii）内源性tRNA不被非天然氨基酸排除的aaRS识别。在真核生物来源的无细胞蛋白质合成系统中，酵母线粒体色氨酸tRNA合成酶与线粒体tRNATrp（mt tRNATrp）组合使用。

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