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1. 发明申请

US20120012861A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120012861A1
公开(公告)日：2012-01-19
申请号：US13258452
申请日：2010-03-23
申请人： Yuki Nakano , Shuhei Mitani , Mineo Miura
发明人： Yuki Nakano , Shuhei Mitani , Mineo Miura
IPC分类号： H01L29/24
CPC分类号： H01L29/7816 , H01L29/045 , H01L29/1045 , H01L29/1095 , H01L29/1608 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/45 , H01L29/66068 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type, each formed in a region extending from the surface of the semiconductor layer to a halfway portion of the same in the thickness direction, and each spaced apart from each other in a direction perpendicular to the thickness direction; source regions of the first conductivity type, each formed on the surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed by digging from the source of the semiconductor layer, the inside surface of the trenches are covered by the gate insulating film, and the gate electrodes comprise surface-facing parts, which face the surface of the semiconductor layer, and buried parts, which are buried in the trenches.
摘要翻译：一种半导体器件，包括第一导电类型的半导体层; 多个第二导电类型的主体区域，各自形成在从半导体层的表面延伸到其厚度方向的中间部分的区域中，并且在垂直于厚度的方向上彼此间隔开方向; 源区域，每个源区域形成在每个体区域的表面层部分上并与每个身体区域的边缘隔开; 形成在所述半导体层上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。在半导体层中，通过从半导体层的源进行挖掘来形成在两个相邻的源极区之间延伸的沟槽，沟槽的内表面被栅极绝缘膜覆盖，并且栅电极包括面向表面的部分半导体层的表面和埋在沟槽中的埋藏部分。

2. 发明授权

US08546814B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08546814B2
公开(公告)日：2013-10-01
申请号：US13258452
申请日：2010-03-23
申请人： Yuki Nakano , Shuhei Mitani , Mineo Miura
发明人： Yuki Nakano , Shuhei Mitani , Mineo Miura
IPC分类号： H01L31/0312
CPC分类号： H01L29/7816 , H01L29/045 , H01L29/1045 , H01L29/1095 , H01L29/1608 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/45 , H01L29/66068 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type, each formed in a region extending from the surface of the semiconductor layer to a halfway portion of the same in the thickness direction, and each spaced apart from each other in a direction perpendicular to the thickness direction; source regions of the first conductivity type, each formed on the surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed by digging from the source of the semiconductor layer, the inside surface of the trenches are covered by the gate insulating film, and the gate electrodes comprise surface-facing parts, which face the surface of the semiconductor layer, and buried parts, which are buried in the trenches.
摘要翻译：一种半导体器件，包括第一导电类型的半导体层; 多个第二导电类型的主体区域，各自形成在从半导体层的表面延伸到其厚度方向的中间部分的区域中，并且在垂直于厚度的方向上彼此间隔开方向; 源区域，每个源区域形成在每个体区域的表面层部分上并与每个身体区域的边缘隔开; 形成在所述半导体层上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。在半导体层中，通过从半导体层的源进行挖掘来形成在两个相邻的源极区之间延伸的沟槽，沟槽的内表面被栅极绝缘膜覆盖，并且栅电极包括面向表面的部分半导体层的表面和埋在沟槽中的埋藏部分。

3. 发明授权

US08653533B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08653533B2
公开(公告)日：2014-02-18
申请号：US13394549
申请日：2010-09-02
申请人： Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
发明人： Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
IPC分类号： H01L29/15
CPC分类号： H01L29/7827 , H01L21/02164 , H01L21/02178 , H01L21/0223 , H01L21/02236 , H01L21/02247 , H01L21/02252 , H01L21/02255 , H01L21/0445 , H01L21/049 , H01L21/8213 , H01L29/0847 , H01L29/086 , H01L29/0869 , H01L29/1087 , H01L29/1608 , H01L29/41766 , H01L29/42356 , H01L29/4236 , H01L29/42368 , H01L29/45 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66068 , H01L29/78 , H01L29/7802 , H01L29/7813
摘要： A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在碳化硅衬底上形成氧化硅膜，在含有氢气的气体中退火碳化硅衬底和氧化硅膜，并在氧化硅膜上形成氧氮化硅膜碳化硅衬底和氧化硅膜的退火。

4. 发明申请

US20120223338A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120223338A1
公开(公告)日：2012-09-06
申请号：US13394549
申请日：2010-09-02
申请人： Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
发明人： Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
IPC分类号： H01L29/78 , H01L21/316
CPC分类号： H01L29/7827 , H01L21/02164 , H01L21/02178 , H01L21/0223 , H01L21/02236 , H01L21/02247 , H01L21/02252 , H01L21/02255 , H01L21/0445 , H01L21/049 , H01L21/8213 , H01L29/0847 , H01L29/086 , H01L29/0869 , H01L29/1087 , H01L29/1608 , H01L29/41766 , H01L29/42356 , H01L29/4236 , H01L29/42368 , H01L29/45 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66068 , H01L29/78 , H01L29/7802 , H01L29/7813
摘要： A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在碳化硅衬底上形成氧化硅膜，在含有氢的气体中退火碳化硅衬底和氧化硅膜，并在氧化硅膜上形成氧氮化硅膜碳化硅衬底和氧化硅膜的退火。

5. 发明申请

US20130009256A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20130009256A1
公开(公告)日：2013-01-10
申请号：US13635312
申请日：2011-03-30
申请人： Keiji Okumura , Mineo Miura , Yuki Nakano , Noriaki Kawamoto
发明人： Keiji Okumura , Mineo Miura , Yuki Nakano , Noriaki Kawamoto
IPC分类号： H01L29/78
CPC分类号： H01L29/66734 , H01L21/02164 , H01L21/02271 , H01L21/02529 , H01L21/0254 , H01L21/0465 , H01L21/31111 , H01L29/0615 , H01L29/0619 , H01L29/0657 , H01L29/0696 , H01L29/0886 , H01L29/1095 , H01L29/1608 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/45 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66068 , H01L29/7811 , H01L29/7813
摘要： The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type, body regions of a second conductivity type plurally formed on a surface layer portion of the semiconductor layer at an interval, a source region of the first conductivity type formed on a surface layer portion of each body region, a gate insulating film provided on the semiconductor layer to extend between the body regions adjacent to each other, a gate electrode provided on the gate insulating film and opposed to the body regions, and a field relaxation portion provided between the body regions adjacent to each other for relaxing an electric field generated in the gate insulating film.
摘要翻译：根据本发明的半导体器件包括第一导电类型的半导体层，第二导电类型的主体区域，多个以一定间隔形成在半导体层的表面层部分上，第一导电类型的源极区形成在每个体区的表层部分，设置在半导体层上以在彼此相邻的主体区域之间延伸的栅极绝缘膜，设置在栅极绝缘膜上并与身体区域相对的栅电极，以及场弛豫部分设置在彼此相邻的主体区域之间，用于放松在栅极绝缘膜中产生的电场。

6. 发明授权

US09978952B2 Fused heterocyclic aromatic derivative, organic electroluminescence element material, and organic electroluminescence element using same 有权
公开(公告)号：US09978952B2
公开(公告)日：2018-05-22
申请号：US14234533
申请日：2012-09-11
申请人： Yuki Nakano , Kei Yoshida , Hideaki Nagashima , Ryohei Hashimoto
发明人： Yuki Nakano , Kei Yoshida , Hideaki Nagashima , Ryohei Hashimoto
IPC分类号： H01L51/50 , H01L51/00 , C07D333/76 , C07D519/00 , C07D307/91 , C09K11/06 , H05B33/10 , C09B57/00 , C09B69/00
CPC分类号： H01L51/0067 , C07D307/91 , C07D333/76 , C07D519/00 , C09B57/00 , C09B69/008 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , H01L51/0071 , H01L51/0073 , H01L51/0074 , H01L51/0085 , H01L51/5016 , H05B33/10
摘要： A compound represented by the following formula (1). In the formula, A1 is O, S, Si(Ar1)(Ar2), P(═O)(Ar3)(Ar4), a substituted or unsubstituted arylene group including 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group including 5 to 30 ring atoms.

7. 发明授权

US09764241B2 Game system utilizing network 有权
公开(公告)号：US09764241B2
公开(公告)日：2017-09-19
申请号：US14234894
申请日：2012-08-01
申请人： Yasushi Mito , Hidekazu Shimizu , Masanori Kono , Koji Makino , Masayuki Shamoto , Satoshi Tsuchida , Ryo Horie , Yuki Nakano , Naoko Nasuhara , Tomohiro Inami
发明人： Yasushi Mito , Hidekazu Shimizu , Masanori Kono , Koji Makino , Masayuki Shamoto , Satoshi Tsuchida , Ryo Horie , Yuki Nakano , Naoko Nasuhara , Tomohiro Inami
IPC分类号： A63F13/79 , A63F13/795 , A63F13/30
CPC分类号： A63F13/795 , A63F13/12 , A63F13/30 , A63F13/79 , A63F2300/5566 , A63F2300/6054 , A63F2300/8047
摘要： This game system (1) includes multiple game machines (2A, 2B) connected to a network (5), allows a player of a game machine to select one of selective items on a game prepared in advance, and allows the player to play a game having content reflecting the selected item. This game system is provided with a device (32) for storing relation data for determining whether or not a predetermined connection exists between players, a device (11) for determining the selection state pertaining to the items selected by the players on the game machines, a device (11, 12) for determining, based on the relation data, other players that have the predetermined connection with the player, and a device (21) which, when the player is making the selection from the selective items, presents the player making the selection with the selection state of other players having the predetermined connection with that player.

8. 发明授权

US09537111B2 Compound, material for organic electroluminescence device, and organic electroluminescence device 有权
标题翻译：有机电致发光元件用复合物，有机电致发光元件
公开(公告)号：US09537111B2
公开(公告)日：2017-01-03
申请号：US14116896
申请日：2012-05-09
申请人： Yuki Nakano , Masaki Numata , Hideaki Nagashima
发明人： Yuki Nakano , Masaki Numata , Hideaki Nagashima
IPC分类号： H01L51/50 , H01L51/00 , C09K11/06 , H05B33/14 , C07D333/20 , C07D333/76 , C07D407/10 , C07D417/14 , C07D491/048 , C07D209/86 , C07D307/91
CPC分类号： H01L51/50 , C07D209/86 , C07D307/91 , C07D333/20 , C07D333/76 , C07D407/10 , C07D417/14 , C07D491/048 , C09K11/06 , C09K2211/1007 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/5016 , H01L51/5056 , H01L51/5088 , H01L51/5096 , H05B33/14
摘要： A specific material for organic electroluminescence device having m-phenylene skeleton in its molecule realizes a highly heat-resistant and long lifetime organic electroluminescence device capable of driving at low voltage with high efficiency.
摘要翻译：在其分子中具有间亚苯基骨架的有机电致发光元件的具体材料实现了能够以低效率高效率驱动的高耐热且长寿命的有机电致发光器件。

9. 发明授权

US09219127B2 SiC field effect transistor 有权
标题翻译： SiC场效应晶体管
公开(公告)号：US09219127B2
公开(公告)日：2015-12-22
申请号：US13518650
申请日：2010-12-24
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78 , H01L29/66 , H01L29/165 , H01L29/417 , H01L29/16 , H01L29/43 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/7813 , H01L29/1608 , H01L29/165 , H01L29/41741 , H01L29/41766 , H01L29/43 , H01L29/47 , H01L29/66068 , H01L29/7803 , H01L29/7806 , H01L29/8618 , H01L29/872
摘要： A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.
摘要翻译： SiC场效应晶体管包括：SiC半导体层; 以及包括半导体层中的第一导电型源极区域的MIS晶体管结构，与源极区域接触的半导体层中的第二导电类型体区域，与体区域接触的半导体层中的第一导电型漂移区域与所述体区相对的栅极电极，其具有插入在所述电极和所述体区之间的栅极绝缘膜，用于在所述体区中形成沟道，以使所述电流在所述漂移区域和所述源极区域之间流动，以及阻挡层形成层与漂移区接触以通过与漂移区的接触而形成结屏障，所述结屏障低于由身体区域和漂移区域之间的结点限定的体二极管的扩散电位。

10. 发明授权

US09184286B2 Semiconductor device having a breakdown voltage holding region 有权
标题翻译：具有击穿电压保持区域的半导体器件
公开(公告)号：US09184286B2
公开(公告)日：2015-11-10
申请号：US13983157
申请日：2012-02-01
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/66 , H01L29/78 , H01L21/82 , H01L29/417 , H01L29/06 , H01L29/10 , H01L29/16 , H01L29/45 , H01L29/47 , H01L29/20
CPC分类号： H01L29/7813 , H01L21/8213 , H01L27/088 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/086 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/45 , H01L29/47 , H01L29/66045 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7827 , H01L2224/0603
摘要： A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region.
摘要翻译：本发明的半导体器件是具有包括宽带隙半导体的半导体层的半导体器件，其中半导体层包括：第一导电型源极区，第二导电型沟道区和第一导电类型漏极区域，其从半导体层的表面侧依次形成; 源极沟槽，其从半导体层的表面通过源极区域和沟道区域到达漏极区域; 形成为与沟道区域接触的栅极绝缘膜; 面对沟道区域的栅电极，其间插入有栅极绝缘膜; 以及选择性地形成在源沟槽的侧面或底面上的第二导电类型的第一击穿电压保持区域，并且所述半导体器件包括与源极沟槽中的漏极区域接合的势垒形成层，用于通过与漏极区域的连接形成低于由沟道区域和漏极区域之间的pn结形成的体二极管的扩散电位的结屏障。

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