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1. 发明授权

US07872257B2 Organic thin film transistor array and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管阵列及其制造方法
公开(公告)号：US07872257B2
公开(公告)日：2011-01-18
申请号：US12128993
申请日：2008-05-29
申请人： Tomihiro Hashizume , Yuji Suwa , Masaaki Fujimori , Tadashi Arai , Takeo Shiba
发明人： Tomihiro Hashizume , Yuji Suwa , Masaaki Fujimori , Tadashi Arai , Takeo Shiba
IPC分类号： H01L51/30 , H01L21/70
CPC分类号： H01L27/283 , H01L51/0003 , H01L51/0018 , H01L51/0021
摘要： An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.
摘要翻译：通过使用用于施加半导体和电极的界面和电极之间的费米能量的差异的大小的方程式，仅选择性地改变覆盖涂层而不改变TFT材料来实现n型TFT和p型TFT 半导体和绝缘体的界面。此时，为了构成规定的电路，作为p型TFT的源电极和漏电极，n型TFT的源电极和漏极全部分别连接，进行该处理并且通过使用扫描激光曝光装置等照射光而切断不必要的互连。

2. 发明申请

US20080012009A1 FIELD EFFECT TRANSISTOR, ORGANIC THIN-FILM TRANSISTOR AND MANUFACTURING METHOD OF ORGANIC TRANSISTOR 审中-公开
标题翻译：场效应晶体管，有机薄膜晶体管和有机晶体管的制造方法
公开(公告)号：US20080012009A1
公开(公告)日：2008-01-17
申请号：US11685958
申请日：2007-03-14
申请人： Tomihiro Hashizume , Masaaki Fujimori , Yuji Suwa , Tadashi Arai
发明人： Tomihiro Hashizume , Masaaki Fujimori , Yuji Suwa , Tadashi Arai
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0021 , H01L51/0545 , H01L51/105
摘要： A method for determining the combination of the electrode and organic semiconductor with improved electron injection efficiency and hole injection efficiency in an organic TFT is provided, two types of FETS, that is, an n channel FET and a p channel FET are realized, and further, a complementary TFT (CTFT) is provided. The method for obtaining the vacuum level shift at the electrode metal/organic semiconductor interface from physical constants of constituent elements of the electrode and the organic semiconductor is provided. By changing the electrode metal through an electrochemical method, the electrodes whose electron injection and hole injection can be controlled are formed. By using these electrodes, two types of FETs such as an n channel FET and a p channel FET are realized, thereby providing a complementary TFT (CTFT).
摘要翻译：提供了一种用于确定电极和有机半导体在有机TFT中具有改进的电子注入效率和空穴注入效率的组合的方法，实现了两种类型的FETS，即n沟道FET和ap沟道FET，此外，提供互补TFT（CTFT）。提供了从电极和有机半导体的构成元件的物理常数获得电极金属/有机半导体界面处的真空电平移动的方法。通过电化学方法改变电极金属，可以形成电子注入和空穴注入的电极。通过使用这些电极，实现了诸如n沟道FET和p沟道FET的两种类型的FET，从而提供互补TFT（CTFT）。

3. 发明授权

US07872254B2 Wiring and organic transistor, and manufacturing method thereof 有权
标题翻译：布线和有机晶体管及其制造方法
公开(公告)号：US07872254B2
公开(公告)日：2011-01-18
申请号：US11687767
申请日：2007-03-19
申请人： Yuji Suwa , Tomihiro Hashizume , Masaaki Fujimori
发明人： Yuji Suwa , Tomihiro Hashizume , Masaaki Fujimori
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0021 , H01B1/02 , H01B1/16 , H01L51/0545 , H01L51/105 , H05K1/097 , H05K3/105
摘要： An organic transistor is formed with a low material cost and low manufacturing cost while still providing high performance and a low contact resistance with an organic semiconductor of the transistor. The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, a property of the second metal is used in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.
摘要翻译：有机晶体管以低的材料成本和低的制造成本形成，同时仍然提供与晶体管的有机半导体的高性能和低接触电阻。有机晶体管具有主体由廉价的第一金属形成并且其表面由昂贵但提供高性能的第二金属形成的电极。为了以低成本获得该结构的稳定性，使用第二金属的属性，其中第二金属在第一金属和第二金属的合金中容易地偏析在第一金属的表面上。

4. 发明申请

US20070275500A1 WIRING AND ORGANIC TRANSISTOR, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：有线和有线晶体管及其制造方法
公开(公告)号：US20070275500A1
公开(公告)日：2007-11-29
申请号：US11687767
申请日：2007-03-19
申请人： Yuji Suwa , Tomihiro Hashizume , Masaaki Fujimori
发明人： Yuji Suwa , Tomihiro Hashizume , Masaaki Fujimori
IPC分类号： H01L51/00 , H01B7/22
CPC分类号： H01L51/0021 , H01B1/02 , H01B1/16 , H01L51/0545 , H01L51/105 , H05K1/097 , H05K3/105
摘要： If an organic transistor is formed by printing with a low cost, there are problems in that an inexpensive electrode material has a high contact resistance with a semiconductor, and an expensive electrode material has a low contact resistance. To solve the problems, the present invention provides an organic transistor and a method of forming the same, the organic transistor being formed with a low material cost and low manufacturing cost and providing a low contact resistance with a semiconductor and high performance.The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, the present invention uses a property of the second metal, in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.
摘要翻译：如果通过低成本的印刷形成有机晶体管，则存在廉价的电极材料与半导体具有高接触电阻并且昂贵的电极材料具有低接触电阻的问题。为了解决这些问题，本发明提供了一种有机晶体管及其形成方法，有机晶体管以低成本和低制造成本形成，并且具有半导体的低接触电阻和高性能。有机晶体管具有主体由廉价的第一金属形成并且其表面由昂贵但提供高性能的第二金属形成的电极。为了以低成本获得该结构的稳定性，本发明使用第二金属的特性，其中第二金属在第一金属和第二金属的合金中容易地偏析在第一金属的表面上。

5. 发明申请

US20080315191A1 Organic Thin Film Transistor Array and Method of Manufacturing the Same 有权
标题翻译：有机薄膜晶体管阵列及其制造方法
公开(公告)号：US20080315191A1
公开(公告)日：2008-12-25
申请号：US12128993
申请日：2008-05-29
申请人： Tomihiro Hashizume , Yuji Suwa , Masaaki Fujimori , Tadashi Arai , Takeo Shiba
发明人： Tomihiro Hashizume , Yuji Suwa , Masaaki Fujimori , Tadashi Arai , Takeo Shiba
IPC分类号： H01L51/30 , H01L21/70
CPC分类号： H01L27/283 , H01L51/0003 , H01L51/0018 , H01L51/0021
摘要： An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.
摘要翻译：通过使用用于施加半导体和电极的界面和电极之间的费米能量的差异的大小的方程式，仅选择性地改变覆盖涂层而不改变TFT材料来实现n型TFT和p型TFT 半导体和绝缘体的界面。此时，为了构成规定的电路，作为p型TFT的源电极和漏电极，n型TFT的源电极和漏极全部分别连接，进行该处理并且通过使用扫描激光曝光装置等照射光而切断不必要的互连。

6. 发明授权

US06780698B2 Semiconductor device and its production method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06780698B2
公开(公告)日：2004-08-24
申请号：US10194253
申请日：2002-07-15
申请人： Yuji Suwa , Tomihiro Hashizume , Ken Yamaguchi , Masaaki Fujimori
发明人： Yuji Suwa , Tomihiro Hashizume , Ken Yamaguchi , Masaaki Fujimori
IPC分类号： H01L218238
CPC分类号： H01L29/66537 , H01L21/3003 , H01L21/823807 , H01L29/1083 , H01L29/66545 , H01L29/66621 , H01L29/7834
摘要： A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.
摘要翻译：一种制造半导体器件的方法，包括使存在于半导体衬底中的掺杂剂在所述半导体衬底的表面中分离，从而形成具有比所述衬底更高掺杂剂浓度的薄层。通过偏析形成的薄层防止由于MOSFET的小型化而发生的穿通。该方法允许经济的δ掺杂，而不牺牲器件特性。

7. 发明申请

US20080099760A1 Picture element driving circuit of display panel and display device using the same 审中-公开
标题翻译：显示面板的图像元件驱动电路及使用其的显示装置
公开(公告)号：US20080099760A1
公开(公告)日：2008-05-01
申请号：US11976298
申请日：2007-10-23
申请人： Masaaki Fujimori , Takeo Shiba , Masahiko Ando , Masahiro Kawasaki , Tomihiro Hashizume
发明人： Masaaki Fujimori , Takeo Shiba , Masahiko Ando , Masahiro Kawasaki , Tomihiro Hashizume
IPC分类号： H01L51/05
CPC分类号： H01L27/3274 , H01L27/1292 , H01L27/283 , H01L51/0004
摘要： The present invention provides a picture element driving circuit of an active matrix display device, with a configuration of no through-holes, including two or more FETs. A display device of the present invention has a structure in which a first field-effect transistor and a second field-effect transistor are provided, insulation films of the first and second field-effect transistor are formed on the same layer, and semiconductors used as channels of the two field-effect transistors are formed on both surfaces of the insulation film, respectively. The display device has an electric circuit of a structure in which one of source/drain electrodes of the first field-effect transistor is used as a gate electrode of the second field-effect transistor.
摘要翻译：本发明提供一种有源矩阵显示装置的像素驱动电路，具有不包括两个或更多个FET的通孔的结构。本发明的显示装置具有其中设置有第一场效应晶体管和第二场效应晶体管的结构，第一和第二场效应晶体管的绝缘膜形成在同一层上，半导体用作两个场效应晶体管的沟道分别形成在绝缘膜的两个表面上。显示装置具有其中使用第一场效应晶体管的源极/漏极之一作为第二场效应晶体管的栅电极的结构的电路。

8. 发明授权

US07608857B2 Field effect transistor having a structure in which an organic semiconductor that forms a channel is made of a single crystal or a polycrystal of organic molecules 有权
标题翻译：具有其中形成沟道的有机半导体由有机分子的单晶或多晶体构成的场效应晶体管
公开(公告)号：US07608857B2
公开(公告)日：2009-10-27
申请号：US11602404
申请日：2006-11-21
申请人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
发明人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
IPC分类号： H01L31/036
CPC分类号： H01L51/0003 , H01L51/0012 , H01L51/052 , H01L51/0545
摘要： A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are provided. The channel is formed of a semiconductor organic molecular crystal thin film which is highly oriented, and a TFT that is large in the mobility of the carriers that are conducted through the channel, and a lyophilic TFT pattern that is surrounded by a lyophobic region on a substrate are formed, and the configuration of the pattern is featured, whereby a solution of the semiconductor organic molecules which is supplied to an appropriate region of a substrate surface including the channel is spontaneously dried in an anisotropic fashion, and highly oriented crystal is grown in the drying process.
摘要翻译：提供了与常规有机TFT相比通过沟道传导的载流子迁移率大的TFT，以及廉价且容易地制造TFT的方法。该通道由高度取向的半导体有机分子晶体薄膜和通过沟道传导的载流子的迁移率大的TFT以及由疏液区域包围的亲液性TFT图案形成形成衬底，并且特征在于图案的构造，由此将供给到包括沟道的衬底表面的适当区域的半导体有机分子的溶液以各向异性方式自发干燥，并且高度取向的晶体生长在干燥过程。

9. 发明申请

US20060110847A1 Field effect transistor and its manufacturing method 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060110847A1
公开(公告)日：2006-05-25
申请号：US11194597
申请日：2005-08-02
申请人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
发明人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
IPC分类号： H01L51/40 , H01L21/84 , H01L21/00
CPC分类号： H01L51/0012 , H01L51/0003 , H01L51/0541 , H01L51/0545
摘要： To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.
摘要翻译：为了提供容易制造其中通道分子或导线的取向增强的TFT的方法，与常规型有机TFT相比，以低价格，在基板上形成由疏液区域包围的亲液性TFT图案，自发移动在通过表征图案的形式而含有有机分子或纳米线落入沟道区的液滴中，并且有机分子或纳米线通过运动在通道区域中取向。

10. 发明授权

US07807496B2 Field effect transistor and its manufacturing method 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07807496B2
公开(公告)日：2010-10-05
申请号：US11194597
申请日：2005-08-02
申请人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
发明人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
IPC分类号： H01L51/40
CPC分类号： H01L51/0012 , H01L51/0003 , H01L51/0541 , H01L51/0545
摘要： To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.
摘要翻译：为了提供容易制造其中通道分子或导线的取向增强的TFT的方法，与常规型有机TFT相比，以低价格，在基板上形成由疏液区域包围的亲液性TFT图案，自发移动在通过表征图案的形式而含有有机分子或纳米线落入沟道区的液滴中，并且有机分子或纳米线通过运动在通道区域中取向。

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