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    • 4. 发明授权
    • Sterophonic sound field expansion device
    • Sterophonic声场扩展装置
    • US5740253A
    • 1998-04-14
    • US638494
    • 1996-04-26
    • Eiji Takeuchi
    • Eiji Takeuchi
    • G10K15/00G10K15/12H04S1/00H04S3/00H04R5/00
    • H04S3/002H04S1/002H04S7/305
    • A stereophonic sound field generation device includes a left side localized reflected sound generation circuit which generates a left channel reflected sound signal and a left channel cancel signal for realizing an outside-of-speaker localization of the left channel reflected sound signal. The left side localized reflected sound generation circuit includes a delay circuit and a coefficient generator. By variously setting delay time of the delay circuit 140 and multiplication coefficient of the coefficient generator with respect to each reflected sound, at least one reflected sound in a broad listenable range can be localized in a space outside of a left channel speaker even when a listener moves his listening position. The stereophonic sound field expansion device includes also a right side localized reflected sound generation circuit which is of the same construction as the left side localized reflected sound generation circuit and at least one reflected sound can be localized in a space outside of a right channel speaker.
    • 立体声声场产生装置包括产生左声道反射声信号的左侧局部反射声产生电路和用于实现左声道反射声信号的扬声器外定位的左声道消除信号。 左侧局部反射声产生电路包括延迟电路和系数发生器。 通过不同地设置延迟电路140的延迟时间和系数发生器相对于每个反射的声音的乘法系数,即使在收听者中也可以将宽广的可听范围中的至少一个反射的声音定位在左声道扬声器之外的空间中 移动他的听力位置。 立体声声场扩展装置还包括与左侧局部反射声产生电路具有相同结构的右侧局部反射声产生电路,并且至少一个反射声可以被定位在右声道扬声器外部的空间中。
    • 5. 发明授权
    • Method of layer thickness measurement
    • 层厚测量方法
    • US4625556A
    • 1986-12-02
    • US751299
    • 1985-07-02
    • Yusuke SukaharaEiji TakeuchiEisaku Hayashi
    • Yusuke SukaharaEiji TakeuchiEisaku Hayashi
    • G01S15/88G01B17/02G01N29/00
    • G01B17/025
    • The layer thickness of an object including a substrate and a layer formed thereon is measured by the following steps. First, with regard to a reference system consisting of a reference substrate and a reference layer formed thereon, which are formed of the same materials as those of the object, and an ultrasonic wave propagation medium, the incident angle .theta. at which an ultrasonic wave is applied through the propagation medium to the reference layer and the product H of the frequency of the ultrasonic wave and the thickness of the reference layer are calculated, the incident angle .theta. and product H having such values as minimize the intensity of the ultrasonic wave reflected from the reference layer. The layer of the object is put in contact with the ultrasonic wave propagation medium, and an ultrasonic wave is applied to the layer through the propagation medium at the incident angle .theta.. Then, the frequency of the ultrasonic wave reflected from the layer is measured to detect the frequency of the incident ultrasonic wave for the minimum reflected wave intensity. The thickness of the layer of the object is calculated from the detected frequency and the value H.
    • 通过以下步骤测量包括基底和形成在其上的层的物体的层厚度。 首先,关于由与其相同的材料形成的参考基板和参考层构成的参考系,以及超声波传播介质,超声波的入射角θ 通过传播介质施加到参考层,并计算超声波的频率和参考层的厚度的乘积H,入射角θ和乘积H具有使从超声波反射的超声波的强度最小化的值 参考层。 物体的层与超声波传播介质接触,并且通过传播介质以入射角θ向该层施加超声波。 然后,测量从层反射的超声波的频率,以检测最小反射波强度的入射超声波的频率。 从检测到的频率和值H计算物体层的厚度。
    • 7. 发明申请
    • ELECTRON-EMITTING DEVICE AND IMAGE DISPLAY APPARATUS
    • 电子发射装置和图像显示装置
    • US20090284127A1
    • 2009-11-19
    • US12463715
    • 2009-05-11
    • Eiji TakeuchiTakeo Tsukamoto
    • Eiji TakeuchiTakeo Tsukamoto
    • H01J1/62H01J9/02
    • H01J1/316H01J31/127H01J2201/3165H01J2329/0489
    • An electron-emitting device has a pair of device electrodes formed on a substrate and an electroconductive film connected to the device electrodes. The electroconductive film has a first gap between the device electrodes and has a carbon film having a second gap at least in the first gap. The substrate is formed by stacking a nitrogen-contained activation suppressing layer and an activation accelerating layer having a nitrogen containing ratio smaller than that of the activation suppressing layer onto a base and has nitrogen containing ratio distribution in the activation suppressing layer in a film thickness direction. The nitrogen containing ratio of the activation suppressing layer at the activation accelerating layer side is smaller than that at the base side.
    • 电子发射器件具有形成在衬底上的一对器件电极和连接到器件电极的导电膜。 导电膜在器件电极之间具有第一间隙,并且具有至少在第一间隙中具有第二间隙的碳膜。 基板是通过将含氮活化抑制层和活性促进层与活化抑制层的比例小于活化抑制层的活化促进层而形成的,并且在活化抑制层中具有膜厚度方向上的含氮比分布 。 活化促进层侧的活化抑制层的氮含量比基体侧的氮含有率小。