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1. 发明授权

US07273671B2 Fuel cell and method for making the same 失效
公开(公告)号：US07273671B2
公开(公告)日：2007-09-25
申请号：US09850203
申请日：2001-05-08
申请人： Yuji Saito , Jun Sasahara , Nariaki Kuriyama , Tadahiro Kubota , Toshifumi Suzuki , Yuji Isogai , Friedrich B. Prinz , Sang-Joon John Lee , Suk Won Cha , Yaocheng Liu , Ryan O'Hayre
发明人： Yuji Saito , Jun Sasahara , Nariaki Kuriyama , Tadahiro Kubota , Toshifumi Suzuki , Yuji Isogai , Friedrich B. Prinz , Sang-Joon John Lee , Suk Won Cha , Yaocheng Liu , Ryan O'Hayre
IPC分类号： H01M8/10 , H01M8/22
CPC分类号： H01M8/2404 , H01M4/8605 , H01M4/8885 , H01M8/1213 , H01M8/243 , H01M8/2475 , Y02P70/56
摘要： In a fuel cell comprising a tubular casing, an electrolyte layer received in the tubular casing, and a pair of gas diffusion electrodes interposing the electrolyte layer and defining a fuel gas passage and an oxidizing gas passage, respectively, each gas diffusion electrode is formed by stacking a plurality of layers of material therefor, for instance in the axial direction of the casing. Because the gas diffusion layers are formed layer by layer, components can be formed in highly fine patterns so that a highly compact tubular fuel cell can be achieved. Similarly, the dimensions of the various elements of the fuel cell can be controlled in a highly accurate manner. Also, the geometric arrangement can be changed at will in intermediate parts of each gas passage.

2. 发明授权

US07169498B2 Fuel cell and method for making the same 失效
标题翻译：燃料电池及其制造方法
公开(公告)号：US07169498B2
公开(公告)日：2007-01-30
申请号：US10449392
申请日：2003-06-02
申请人： Yuji Saito , Jun Sasahara , Nariaki Kuriyama , Tadahiro Kubota , Toshifumi Suzuki , Yuji Isogai , Friedrich B. Prinz , Sang-Joon John Lee , Suk Won Cha , Yaocheng Liu , Ryan O'Hayre
发明人： Yuji Saito , Jun Sasahara , Nariaki Kuriyama , Tadahiro Kubota , Toshifumi Suzuki , Yuji Isogai , Friedrich B. Prinz , Sang-Joon John Lee , Suk Won Cha , Yaocheng Liu , Ryan O'Hayre
IPC分类号： H01M8/10 , H01M4/88
CPC分类号： H01M8/2404 , H01M4/8605 , H01M4/8885 , H01M8/1213 , H01M8/243 , H01M8/2475 , Y02P70/56
摘要： In a fuel cell comprising a tubular casing, an electrolyte layer received in the tubular casing, and a pair of gas diffusion electrodes interposing the electrolyte layer and defining a fuel gas passage and an oxidizing gas passage, respectively, each gas diffusion electrode is formed by stacking a plurality of layers of material therefor, for instance in the axial direction of the casing. Because the gas diffusion layers are formed layer by layer, components can be formed in highly fine patterns so that a highly compact tubular fuel cell can be achieved. Similarly, the dimensions of the various elements of the fuel cell can be controlled in a highly accurate manner. Also, the geometric arrangement can be changed at will in intermediate parts of each gas passage.
摘要翻译：在包括管状壳体的电池单元中，容纳在管状壳体中的电解质层和分别插入电解质层并限定燃料气体通道和氧化气体通道的一对气体扩散电极，每个气体扩散电极通过堆叠多个材料层，例如沿壳体的轴向方向。由于气体扩散层是逐层形成的，所以可以以高精细图案形成部件，从而能够实现高度紧凑的管状燃料电池。类似地，可以以高精度的方式控制燃料电池的各种元件的尺寸。此外，几何排列可以随意地在每个气体通道的中间部分改变。

3. 发明授权

US06991868B2 Fuel cell assembly 失效
标题翻译：燃料电池组件
公开(公告)号：US06991868B2
公开(公告)日：2006-01-31
申请号：US10275591
申请日：2001-05-08
申请人： Sang-Joon John Lee , Jun Sasahara , Nariaki Kuriyama , Tadahiro Kubota , Toshifumi Suzuki , Friedrich B. Prinz , Suk Won Cha , Amy Chang-Chien , Yaocheng Liu , Ryan O'Hayre
发明人： Sang-Joon John Lee , Jun Sasahara , Nariaki Kuriyama , Tadahiro Kubota , Toshifumi Suzuki , Friedrich B. Prinz , Suk Won Cha , Amy Chang-Chien , Yaocheng Liu , Ryan O'Hayre
IPC分类号： H01M2/14 , H01M2/08 , H01M2/00 , H01M8/10
CPC分类号： H01M8/242 , H01M8/0204 , H01M8/0271 , H01M8/04007 , H01M8/04067 , H01M8/04225 , H01M8/04268 , H01M8/2483 , H01M2008/1095 , Y02P70/56
摘要： In a fuel cell assembly comprising a plurality of cell each including an electrolyte layer (2), a pair of diffusion electrode layers (3, 4) interposing the electrolyte layer between them, and a pair of flow distribution plates (5) for defining passages (11) for fuel and oxidant fluids that contact the diffusion electrode layers, the fuel cells are arranged on a common plane. Therefore, the vertical dimension of the fuel cell assembly can be minimized, and a fuel cell assembly of favorable electric properties can be achieved. Each flow distribution plate is typically formed with communication passages for communicating fluid passages defined on each side of the electrolyte layer at a prescribed pattern. The communication passages and through holes communicate the fluid passages in such a manner that adjacent fuels cells have opposite polarities.
摘要翻译：在包括多个电池的燃料电池组件中，每个电池单元包括电解质层（2），在电极层之间插入电解质层的一对扩散电极层（3,4）和用于限定通道的一对分流板（5）（11），用于与所述扩散电极层接触的燃料和氧化剂流体，所述燃料电池被布置在共同的平面上。因此，能够使燃料电池组件的垂直尺寸最小化，能够实现良好的电气特性的燃料电池组件。每个流量分配板通常形成有连通通道，用于以规定的模式连通限定在电解质层的每一侧上的流体通道。连通通道和通孔以相邻燃料电池具有相反极性的方式连通流体通道。

4. 发明授权

US06835488B2 Fuel cell with patterned electrolyte/electrode interface 失效
标题翻译：具有图案电解质/电极界面的燃料电池
公开(公告)号：US06835488B2
公开(公告)日：2004-12-28
申请号：US09850411
申请日：2001-05-08
申请人： Jun Sasahara , Suk Won Cha , Amy Chang-Chien , Tadahiro Kubota , Nariaki Kuriyama , Sang-Joon J. Lee , Yaocheng Liu , Ryan O'Hayre , Friedrich B. Prinz , Yuji Saito
发明人： Jun Sasahara , Suk Won Cha , Amy Chang-Chien , Tadahiro Kubota , Nariaki Kuriyama , Sang-Joon J. Lee , Yaocheng Liu , Ryan O'Hayre , Friedrich B. Prinz , Yuji Saito
IPC分类号： H01M214
CPC分类号： H01M4/86 , H01M4/0485 , H01M8/0254 , H01M8/0289 , H01M8/1007 , H01M2008/1293
摘要： A fuel cell contains an electrolyte sheet sandwiched between two electrodes. One or both electrode/electrolyte interfaces includes mesoscopic three-dimensional features in a prescribed pattern. The features increase the surface area-to-volume ratio of the device and can be used as integral channels for directing the flow of reactant gases to the reaction surface area, eliminating the need for channels in sealing plates surrounding the electrodes. The electrolyte can be made by micromachining techniques that allow very precise feature definition. Both selective removal and mold-filling techniques can be used. The fuel cell provides significantly enhanced volumetric power density when compared with conventional fuel cells.
摘要翻译：燃料电池包含夹在两个电极之间的电解质片。一个或两个电极/电解质界面包括规定图案的介观三维特征。这些特征增加了装置的表面积 - 体积比，并且可以用作用于将反应物气体流引导到反应表面区域的整体通道，从而不需要围绕电极的密封板中的通道。电解质可以通过允许非常精确的特征定义的微加工技术制成。可以使用选择性去除和模具填充技术。与常规燃料电池相比，燃料电池提供显着提高的体积功率密度。

5. 发明授权

US07888197B2 Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layer 有权
标题翻译：使用牺牲应力层形成具有掺杂玻璃盒层的应力SOI FET的方法
公开(公告)号：US07888197B2
公开(公告)日：2011-02-15
申请号：US11622056
申请日：2007-01-11
申请人： Dureseti Chidambarrao , William K. Henson , Yaocheng Liu
发明人： Dureseti Chidambarrao , William K. Henson , Yaocheng Liu
IPC分类号： H01L21/8238
CPC分类号： H01L29/78696 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/1203 , H01L29/045 , H01L29/7849
摘要： A method is provided for fabricating a semiconductor-on-insulator (“SOI”) substrate. In such method an SOI substrate is formed to include (i) an SOI layer of monocrystalline silicon separated from (ii) a bulk semiconductor layer by (iii) a buried oxide (“BOX”) layer including a layer of doped silicate glass. A sacrificial stressed layer is deposited onto the SOI substrate to overlie the SOI layer. Trenches are then etched through the sacrificial stressed layer and into the SOI layer. The SOI substrate is heated with the sacrificial stressed layer sufficiently to cause the glass layer to soften and the sacrificial stressed layer to relax, to thereby apply a stress to the SOI layer to form a stressed SOI layer. The trenches in the stressed SOI layer are then filled with a dielectric material to form trench isolation regions contacting peripheral edges of the stressed SOI layer, the trench isolation regions extending downwardly from a major surface of the stressed SOI layer towards the BOX layer. The sacrificial stressed layer is then removed to expose the stressed SOI layer. Field effect transistors can then be formed in the stressed SOI layer.
摘要翻译：提供了一种用于制造绝缘体上半导体（“SOI”）衬底的方法。在这种方法中，形成SOI衬底，其包括（i）通过（iii）包含掺杂硅酸盐玻璃层的掩埋氧化物（“BOX”）层从（ii）体半导体层分离的单晶硅的SOI层。牺牲应力层沉积在SOI衬底上以覆盖SOI层。然后将沟槽蚀刻穿过牺牲应力层并进入SOI层。用牺牲应力层将SOI衬底充分加热，使玻璃层软化，牺牲应力层松弛，从而向SOI层施加应力以形成受应力的SOI层。然后用电介质材料填充受应力的SOI层中的沟槽，以形成接触应力SOI层的外围边缘的沟槽隔离区，沟槽隔离区域从受应力的SOI层的主表面向BOX层向下延伸。然后去除牺牲应力层以暴露受应力的SOI层。然后可以在受应力的SOI层中形成场效应晶体管。

6. 发明授权

US07838932B2 Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbon 有权
标题翻译：用嵌入式硅碳纳米管技术，提高了STIFET结构和超级马赛克纳米管的性能提升
公开(公告)号：US07838932B2
公开(公告)日：2010-11-23
申请号：US12028191
申请日：2008-02-08
申请人： Ashima B. Chakravarti , Dureseti Chidambarrao , Judson R. Holt , Yaocheng Liu , Kern Rim
发明人： Ashima B. Chakravarti , Dureseti Chidambarrao , Judson R. Holt , Yaocheng Liu , Kern Rim
IPC分类号： H01L29/76257
CPC分类号： H01L21/823864 , H01L21/76224 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66628 , H01L29/7843 , H01L29/7848
摘要： An embedded silicon carbon (Si:C) having a substitutional carbon content in excess of one percent in order to effectively increase electron mobility by application of tension to a channel region of an NFET is achieved by overfilling a gap or trench formed by transistor gate structures with Si:C and polishing an etching the Si:C to or below a surface of a raised gate structure in a super-Damascene process, leaving Si:C only in selected regions above the transistor source and drain, even though processes capable of depositing Si:C with sufficiently high substitutional carbon content are inherently non-selective.
摘要翻译：通过过度填充由晶体管栅极结构形成的间隙或沟槽，实现了通过向NFET的沟道区域施加张力来有效地增加电子迁移率的具有超过1％的取代碳含量的嵌入式硅碳（Si：C）用Si：C，并在超级马赛克法中抛光将Si：C蚀刻到升高的栅极结构的表面或之下，即使在晶体管源极和漏极之上的选定区域中仅保留Si：C，即使能够沉积具有足够高的替代碳含量的Si：C固有地是非选择性的。

7. 发明授权

US07655551B2 Control of poly-Si depletion in CMOS via gas phase doping 失效
标题翻译：通过气相掺杂控制CMOS中的多晶硅耗尽
公开(公告)号：US07655551B2
公开(公告)日：2010-02-02
申请号：US12127171
申请日：2008-05-27
申请人： Yaocheng Liu , Alexander Reznicek , Devendra K. Sadana
发明人： Yaocheng Liu , Alexander Reznicek , Devendra K. Sadana
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/823842 , H01L21/28035 , H01L21/32155 , H01L29/4916
摘要： A method to control the poly-Si depletion effect in CMOS structures utilizing a gas phase doping process which is capable of providing a high concentration of dopant atoms at the gate dielectric/poly-Si interface is provided. The present invention also provides CMOS structure including, for example, nFETs and/or pFETs, that are fabricated utilizing the gas phase doping technique described herein.
摘要翻译：提供了一种利用气相掺杂工艺在CMOS结构中控制多晶硅耗尽效应的方法，该方法能够在栅极电介质/多晶硅界面处提供高浓度的掺杂剂原子。本发明还提供了包括例如nFET和/或pFET的CMOS结构，其利用本文所述的气相掺杂技术制造。

8. 发明授权

US07598147B2 Method of forming CMOS with Si:C source/drain by laser melting and recrystallization 有权
标题翻译：通过激光熔融和重结晶用Si：C源极/漏极形成CMOS的方法
公开(公告)号：US07598147B2
公开(公告)日：2009-10-06
申请号：US11860127
申请日：2007-09-24
申请人： Yaocheng Liu , Qiqing C. Ouyang , Kathryn T. Schonenberg , Chun-Yung Sung
发明人： Yaocheng Liu , Qiqing C. Ouyang , Kathryn T. Schonenberg , Chun-Yung Sung
IPC分类号： H01L21/336
CPC分类号： H01L21/26506 , H01L21/268 , H01L21/823807 , H01L21/823814 , H01L21/823828 , H01L29/665 , H01L29/66545 , H01L29/7848
摘要： A method of forming crystalline Si:C in source and drain regions is provided. After formation of shallow trench isolation and gate electrodes of field effect transistors, gate spacers are formed on gate electrodes. Preamorphization implantation is performed in the source and drain regions, followed by carbon implantation. The upper portion of the source and drain regions comprises an amorphous mixture of silicon, germanium, and/or carbon. An anti-reflective layer is deposited to enhance the absorption of a laser beam into the silicon substrate. The laser beam is scanned over the silicon substrate including the upper source and drain region with the amorphous mixture. The energy of the laser beam is controlled so that the temperature of the semiconductor substrate is above the melting temperature of the amorphous mixture but below the glass transition temperature of silicon oxide so that structural integrity of the semiconductor structure is preserved.
摘要翻译：提供了在源极和漏极区域中形成晶体Si：C的方法。在形成浅沟槽隔离和场效应晶体管的栅电极之后，在栅电极上形成栅极间隔物。在源极和漏极区域中进行前置放电，随后进行碳注入。源区和漏区的上部包括硅，锗和/或碳的无定形混合物。沉积抗反射层以增强激光束到硅衬底中的吸收。激光束在包括具有无定形混合物的上源极和漏极区域的硅衬底上扫描。控制激光束的能量使得半导体衬底的温度高于无定形混合物的熔融温度但低于氧化硅的玻璃化转变温度，从而保持半导体结构的结构完整性。

9. 发明授权

US07473626B2 Control of poly-Si depletion in CMOS via gas phase doping 失效
标题翻译：通过气相掺杂控制CMOS中的多晶硅耗尽
公开(公告)号：US07473626B2
公开(公告)日：2009-01-06
申请号：US11402177
申请日：2006-04-11
申请人： Yaocheng Liu , Alexander Reznicek , Devendra K. Sadana
发明人： Yaocheng Liu , Alexander Reznicek , Devendra K. Sadana
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/823842 , H01L21/28035 , H01L21/32155 , H01L29/4916
摘要： A method to control the poly-Si depletion effect in CMOS structures utilizing a gas phase doping process which is capable of providing a high concentration of dopant atoms at the gate dielectric/poly-Si interface is provided. The present invention also provides CMOS structure including, for example, nFETs and/or pFETs, that are fabricated utilizing the gas phase doping technique described herein.
摘要翻译：提供了一种利用气相掺杂工艺在CMOS结构中控制多晶硅耗尽效应的方法，该方法能够在栅极电介质/多晶硅界面处提供高浓度的掺杂剂原子。本发明还提供了使用本文所述的气相掺杂技术制造的包括例如nFET和/或pFET的CMOS结构。

10. 发明授权

US07473594B2 Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbon 失效
标题翻译：用嵌入式硅碳纳米管技术，提高了STIFET结构和超级马赛克纳米管的性能提升
公开(公告)号：US07473594B2
公开(公告)日：2009-01-06
申请号：US11459730
申请日：2006-07-25
申请人： Ashima B. Chakravarti , Dureseti Chidambarrao , Judson R. Holt , Yaocheng Liu , Kern Rim
发明人： Ashima B. Chakravarti , Dureseti Chidambarrao , Judson R. Holt , Yaocheng Liu , Kern Rim
IPC分类号： H01L21/8238
CPC分类号： H01L21/823864 , H01L21/76224 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66628 , H01L29/7843 , H01L29/7848
摘要： An embedded silicon carbon (Si:C) having a substitutional carbon content in excess of one percent in order to effectively increase electron mobility by application of tension to a channel region of an NFET is achieved by overfilling a gap or trench formed by transistor gate structures with Si:C and polishing an etching the Si:C to or below a surface of a raised gate structure in a super-Damascene process, leaving Si:C only in selected regions above the transistor source and drain, even though processes capable of depositing Si:C with sufficiently high substitutional carbon content are inherently non-selective.
摘要翻译：通过过度填充由晶体管栅极结构形成的间隙或沟槽，实现了通过向NFET的沟道区施加张力来有效地增加电子迁移率的具有超过1％的取代碳含量的嵌入式硅碳（Si：C）用Si：C，并在超级马赛克法中抛光将Si：C蚀刻到升高的栅极结构的表面或之下，即使在晶体管源极和漏极之上的选定区域中仅保留Si：C，即使能够沉积具有足够高的替代碳含量的Si：C固有地是非选择性的。

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