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1. 发明授权

US5714408A Method of forming silicon nitride with varied hydrogen concentration 失效
标题翻译：形成不同氢浓度的氮化硅的方法
公开(公告)号：US5714408A
公开(公告)日：1998-02-03
申请号：US766619
申请日：1996-12-13
申请人： Yuji Ichikawa , Yasushi Tanaka , Yasuo Souki , Ryouichi Kubokoya , Akira Kuroyanagi , Hirohito Shioya
发明人： Yuji Ichikawa , Yasushi Tanaka , Yasuo Souki , Ryouichi Kubokoya , Akira Kuroyanagi , Hirohito Shioya
IPC分类号： H01L27/02 , H01L21/318
CPC分类号： H01L27/0251 , Y10S148/114
摘要： On TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si-H bonds is reduced.
摘要翻译：在TEOS（四乙基原硅酸盐）膜和形成在P型硅衬底上的铝配线的表面上形成层叠有高含氢量等离子体SiN膜的低含量等离子体SiN膜。氢含量低的等离子体SiN膜比氢含量高的等离子体SiN膜的氢含量低。因此，即使氢从氢含量高的等离子体SiN膜进入P型硅衬底侧，氢的入口被其中Si-H键的低含量等离子体SiN膜阻挡降低了。

2. 发明授权

US6137156A Semiconductor device employing silicon nitride layers with varied hydrogen concentration 失效
标题翻译：采用具有不同氢浓度的氮化硅层的半导体器件
公开(公告)号：US6137156A
公开(公告)日：2000-10-24
申请号：US15503
申请日：1998-01-29
申请人： Yuji Ichikawa , Yasushi Tanaka , Yasuo Souki , Ryouichi Kubokoya , Akira Kuroyanagi , Hirohito Shioya
发明人： Yuji Ichikawa , Yasushi Tanaka , Yasuo Souki , Ryouichi Kubokoya , Akira Kuroyanagi , Hirohito Shioya
IPC分类号： H01L27/02 , H01L21/318
CPC分类号： H01L27/0251 , Y10S148/114
摘要： On a TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si--H bonds is reduced.
摘要翻译：在TEOS（四乙基原硅酸盐）膜和形成在P型硅衬底上的铝配线的表面上形成层叠有高含量等离子体SiN膜的低含量等离子体SiN膜。氢含量低的等离子体SiN膜比氢含量高的等离子体SiN膜的氢含量低。因此，即使氢从氢含量高的等离子体SiN膜进入P型硅衬底侧，氢的入口被其中Si-H键的低含量等离子体SiN膜阻挡降低了。

3. 发明申请

US20070132045A1 Semiconductor dynamic sensor and method of manufacturing the same 有权
标题翻译：半导体动态传感器及其制造方法
公开(公告)号：US20070132045A1
公开(公告)日：2007-06-14
申请号：US11637240
申请日：2006-12-12
申请人： Koichi Tsubaki , Yasuo Souki
发明人： Koichi Tsubaki , Yasuo Souki
IPC分类号： H01L29/82
CPC分类号： G01P15/0802 , B81B7/0048 , G01P1/023 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor sensor includes an adhesive film for suppressing thermal stress transfer to a semiconductor sensor chip. More specifically, the adhesive film includes a first layer and a second layer. An elasticity modulus of the first layer is lower than that of the second layer, and the second layer has a water absorption smaller than that of the first layer. One surface of a semiconductor wafer is in contact with the first layer. Once the semiconductor wafer and the adhesive film are diced into a plurality of sensor chips, the sensor chip with the adhesive film is mounted on a sensor package via the second layer interposed therebetween.
摘要翻译：半导体传感器包括用于抑制向半导体传感器芯片的热应力传递的粘合膜。更具体地，粘合剂膜包括第一层和第二层。第一层的弹性模量低于第二层的弹性模量，第二层的吸水率比第一层的吸水率小。半导体晶片的一个表面与第一层接触。一旦半导体晶片和粘合剂膜被切割成多个传感器芯片，具有粘合剂膜的传感器芯片通过其间插入的第二层安装在传感器封装上。

4. 发明授权

US06251542B1 Semiconductor wafer etching method 失效
标题翻译：半导体晶片蚀刻方法
公开(公告)号：US06251542B1
公开(公告)日：2001-06-26
申请号：US09188565
申请日：1998-11-10
申请人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
发明人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
IPC分类号： H01L21302
CPC分类号： H01L21/30608 , H01L21/02019 , H01L21/31127 , H01L21/3121 , Y10S438/928
摘要： A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.
摘要翻译：公开了半导体晶片蚀刻方法，其允许在不使用限制性的臭氧破坏溶剂如三氯乙烷或碳氟化合物的情况下进行蚀刻。该方法包括在半导体晶片上形成硅树脂或耐碱树脂的保护膜。然后，蚀刻未被保护膜覆盖的晶片的表面区域。最后，保护膜从半导体晶片剥离而不会损坏晶片或者使用对环境有害的溶剂。

5. 发明授权

US06245593B1 Semiconductor device with flat protective adhesive sheet and method of manufacturing the same 有权
标题翻译：具有平板保护胶片的半导体装置及其制造方法
公开(公告)号：US06245593B1
公开(公告)日：2001-06-12
申请号：US09444724
申请日：1999-11-24
申请人： Shinji Yoshihara , Yasuo Souki , Kinya Atsumi , Hiroshi Muto
发明人： Shinji Yoshihara , Yasuo Souki , Kinya Atsumi , Hiroshi Muto
IPC分类号： H01L2144
CPC分类号： B81C1/00888 , B81C1/00896 , C09J7/385 , C09J2203/326 , C09J2423/006 , C09J2433/00 , H01L21/6836 , H01L2221/68327
摘要： A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.
摘要翻译：半导体器件具有其表面上具有感测部分的半导体晶片和附接到半导体晶片的粘合片作为保护盖以覆盖感测部分。粘合片由通常在粘合片的整个表面上设置的平坦粘合片和粘合剂构成。通过UV照射选择性地降低粘合剂的粘附性以具有粘合减少区域，并且粘合降低区域面对感测部分。可以以高生产率制造保护盖，并且在半导体晶片被切割并被输送时可靠地保护感测部分。

6. 发明授权

US07572659B2 Semiconductor dynamic sensor and method of manufacturing the same 有权
标题翻译：半导体动态传感器及其制造方法
公开(公告)号：US07572659B2
公开(公告)日：2009-08-11
申请号：US11637240
申请日：2006-12-12
申请人： Koichi Tsubaki , Yasuo Souki
发明人： Koichi Tsubaki , Yasuo Souki
IPC分类号： H01L21/00
CPC分类号： G01P15/0802 , B81B7/0048 , G01P1/023 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor sensor includes an adhesive film for suppressing thermal stress transfer to a semiconductor sensor chip. More specifically, the adhesive film includes a first layer and a second layer. An elasticity modulus of the first layer is lower than that of the second layer, and the second layer has a water absorption smaller than that of the first layer. One surface of a semiconductor wafer is in contact with the first layer. Once the semiconductor wafer and the adhesive film are diced into a plurality of sensor chips, the sensor chip with the adhesive film is mounted on a sensor package via the second layer interposed therebetween.
摘要翻译：半导体传感器包括用于抑制向半导体传感器芯片的热应力传递的粘合膜。更具体地，粘合膜包括第一层和第二层。第一层的弹性模量低于第二层的弹性模量，第二层的吸水率比第一层的吸水率小。半导体晶片的一个表面与第一层接触。一旦半导体晶片和粘合剂膜被切割成多个传感器芯片，具有粘合剂膜的传感器芯片通过其间插入的第二层安装在传感器封装上。

7. 发明授权

US07550367B2 Method for separating semiconductor substrate 失效
标题翻译：分离半导体衬底的方法
公开(公告)号：US07550367B2
公开(公告)日：2009-06-23
申请号：US11199132
申请日：2005-08-09
申请人： Muneo Tamura , Yasuo Souki
发明人： Muneo Tamura , Yasuo Souki
IPC分类号： H01L21/00
CPC分类号： H01L21/67092 , B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011 , H01L21/6836 , H01L21/78 , H01L2221/68336
摘要： A method of separating a semiconductor substrate having an implementation member attached thereon includes a dividing process for at least the implementation member on the semiconductor substrate along a separation line, a placing process for film member on a same side as the implementation member, a forming process area by irradiating a laser beam from at least one of a first side of the semiconductor substrate having the implementation member and a second side that is an opposite side of the first side of the semiconductor substrate along the separation line with a focusing point of the laser beam aligned with a substance in the semiconductor substrate and severing/removing at least one semiconductor chip at the separation line from the semiconductor substrate.
摘要翻译：一种分离其上具有实施部件的半导体衬底的方法包括：沿着分离线至少在半导体衬底上的实现部件的分割处理，与构成部件同一侧的膜部件的放置工序，成形工序区域，通过从具有实施构件的半导体衬底的第一侧和沿着分离线的与半导体衬底的第一侧相反的一侧的至少一个的激光束照射激光束，激光束的聚焦点光束与半导体衬底中的物质对准，并且在分离线处切断/去除半导体衬底上的至少一个半导体芯片。

8. 发明申请

US20060040472A1 Method for separating semiconductor substrate 失效
公开(公告)号：US20060040472A1
公开(公告)日：2006-02-23
申请号：US11199132
申请日：2005-08-09
申请人： Muneo Tamura , Yasuo Souki
发明人： Muneo Tamura , Yasuo Souki
IPC分类号： H01L21/78
CPC分类号： H01L21/67092 , B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011 , H01L21/6836 , H01L21/78 , H01L2221/68336
摘要： A method of separating a semiconductor substrate having an implementation member attached thereon includes a dividing process for at least the implementation member on the semiconductor substrate along a separation line, a placing process for film member on a same side as the implementation member, a forming process area by irradiating a laser beam from at least one of a first side of the semiconductor substrate having the implementation member and a second side that is an opposite side of the first side of the semiconductor substrate along the separation line with a focusing point of the laser beam aligned with a substance in the semiconductor substrate and severing/removing at least one semiconductor chip at the separation line from the semiconductor substrate.

9. 发明授权

US06787929B2 Semiconductor device having a flat protective adhesive sheet 失效
标题翻译：具有平坦的保护性粘合片的半导体装置
公开(公告)号：US06787929B2
公开(公告)日：2004-09-07
申请号：US09785464
申请日：2001-02-20
申请人： Shinji Yoshihara , Yasuo Souki , Kinya Atsumi , Hiroshi Muto
发明人： Shinji Yoshihara , Yasuo Souki , Kinya Atsumi , Hiroshi Muto
IPC分类号： H01L2329
CPC分类号： B81C1/00888 , B81C1/00896 , C09J7/385 , C09J2203/326 , C09J2423/006 , C09J2433/00 , H01L21/6836 , H01L2221/68327
摘要： A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.
摘要翻译：半导体器件具有其表面上具有感测部分的半导体晶片和附接到半导体晶片的粘合片作为保护盖以覆盖感测部分。粘合片由通常在粘合片的整个表面上设置的平坦粘合片和粘合剂构成。通过UV照射选择性地降低粘合剂的粘附性以具有粘合减少区域，并且粘合降低区域面对感测部分。可以以高生产率制造保护盖，并且在半导体晶片被切割并被输送时可靠地保护感测部分。

10. 发明授权

US5874365A Semiconductor wafer etching method 失效
标题翻译：半导体晶片蚀刻方法
公开(公告)号：US5874365A
公开(公告)日：1999-02-23
申请号：US328528
申请日：1994-10-25
申请人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
发明人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
IPC分类号： H01L21/304 , H01L21/306 , H01L21/308 , H01L21/311 , H01L21/312 , H01L21/302
CPC分类号： H01L21/02019 , H01L21/30608 , H01L21/31127 , H01L21/3121 , Y10S438/928
摘要： A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.
摘要翻译：公开了半导体晶片蚀刻方法，其允许在不使用限制性的臭氧破坏溶剂如三氯乙烷或碳氟化合物的情况下进行蚀刻。该方法包括在半导体晶片上形成硅树脂或耐碱树脂的保护膜。然后，蚀刻未被保护膜覆盖的晶片的表面区域。最后，保护膜从半导体晶片剥离而不会损坏晶片或者使用对环境有害的溶剂。

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