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1. 发明申请

US20120244721A1 FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM 有权
标题翻译：薄膜成型方法，薄膜成型装置和储存介质
公开(公告)号：US20120244721A1
公开(公告)日：2012-09-27
申请号：US13429742
申请日：2012-03-26
申请人： Yuichiro MOROZUMI , Takuya SUGAWARA , Koji AKIYAMA , Shingo HISHIYA , Toshiyuki HIROTA , Takakazu KIYOMURA
发明人： Yuichiro MOROZUMI , Takuya SUGAWARA , Koji AKIYAMA , Shingo HISHIYA , Toshiyuki HIROTA , Takakazu KIYOMURA
IPC分类号： H01L21/31 , C23C16/455 , C23C16/52
CPC分类号： H01L21/02189 , C23C16/18 , C23C16/405 , C23C16/45529 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L28/40 , H01L29/66181
摘要： A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.
摘要翻译：形成包括氧化锆膜的电介质膜的方法包括：通过提供锆材料和氧化剂在待处理的基板上形成氧化锆膜，所述锆材料包括包含结构中的环戊二烯基环的Zr化合物，并且通过供给钛材料和氧化剂在氧化锆膜上形成氧化钛膜，所述钛材料包括结构中包含环戊二烯基环的Ti化合物。

2. 发明申请

US20120077322A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD 失效
标题翻译：半导体器件及其制造方法和吸附位置阻塞原子层沉积法
公开(公告)号：US20120077322A1
公开(公告)日：2012-03-29
申请号：US13245515
申请日：2011-09-26
申请人： Toshiyuki HIROTA , Takakazu KIYOMURA , Yuichiro MOROZUMI , Shingo HISHIYA
发明人： Toshiyuki HIROTA , Takakazu KIYOMURA , Yuichiro MOROZUMI , Shingo HISHIYA
IPC分类号： H01L21/02 , H01L21/31
CPC分类号： H01L28/40 , H01L21/02178 , H01L21/02186 , H01L21/02189 , H01L21/022 , H01L21/0228
摘要： To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14′ atoms/cm2. Further, to achieve the area density, there is employed a combination of formation of a dielectric film using a general ALD method and Al doping using an adsorption site blocking ALD method including adsorbing a blocker molecule restricting an adsorption site of an Al source, adsorbing the Al source, and introducing a reaction gas for reaction.
摘要翻译：为了提供具有良好结晶性的电介质膜，同时抑制尺寸效应的影响并且防止电介质膜被Al掺杂层划分，尽管提供了用于改善电介质膜中的泄漏特性的Al掺杂层电介质膜具有至少一个Al掺杂层，并且Al掺杂层的一个层中的Al原子的面密度小于1.4E + 14'原子/ cm 2。此外，为了实现面积密度，采用通常的ALD法形成电介质膜和使用吸附位阻挡ALD法的Al掺杂的组合，其包括吸附限制Al源的吸附位点的阻断分子，吸附 Al源，并引入反应气体进行反应。

3. 发明申请

US20120309163A1 METHOD OF FORMING TITANIUM OXIDE FILM HAVING RUTILE CRYSTALLINE STRUCTURE 审中-公开
标题翻译：形成具有结晶结构的氧化钛薄膜的方法
公开(公告)号：US20120309163A1
公开(公告)日：2012-12-06
申请号：US13476617
申请日：2012-05-21
申请人： Takakazu KIYOMURA , Toshiyuki HIROTA , Yuichiro MOROZUMI , Shingo HISHIYA
发明人： Takakazu KIYOMURA , Toshiyuki HIROTA , Yuichiro MOROZUMI , Shingo HISHIYA
IPC分类号： H01G13/00 , H01L21/02
CPC分类号： H01L28/40 , H01L21/02186 , H01L21/0228 , H01L21/02304 , H01L21/02356 , H01L27/10817 , H01L27/10852 , H01L27/10894 , H01L28/91
摘要： The invention provides a method of forming a titanium oxide film having a rutile crystalline structure that has high permittivity. The titanium oxide film having a rutile crystalline structure is produced by forming an amorphous titanium oxide film on an amorphous zirconium oxide film using methyl cyclopentadienyl tris(dimethylamino)titanium as a titanium precursor by an ALD method, and crystallizing the amorphous titanium oxide film by annealing at a temperature of 300° C. or higher.
摘要翻译：本发明提供了形成具有高介电常数的金红石晶体结构的氧化钛膜的方法。具有金红石结晶结构的氧化钛膜通过使用甲基环戊二烯基三（二甲基氨基）钛作为钛前体，通过ALD法在无定形氧化锆膜上形成无定形氧化钛膜，并通过退火使非晶态氧化钛膜结晶温度在300℃以上。

4. 发明申请

US20100052024A1 CAPACITOR INSULATING FILM, METHOD OF FORMING THE SAME, CAPACITOR AND SEMICONDUCTOR DEVICE USING THE CAPACITOR INSULATING FILM 审中-公开
标题翻译：电容绝缘膜，其形成方法，使用电容器绝缘膜的电容器和半导体器件
公开(公告)号：US20100052024A1
公开(公告)日：2010-03-04
申请号：US12548010
申请日：2009-08-26
申请人： Takakazu KIYOMURA , Toshiyuki HIROTA
发明人： Takakazu KIYOMURA , Toshiyuki HIROTA
IPC分类号： H01L27/108 , H01L21/02 , H01G4/06
CPC分类号： H01L21/02197 , H01G4/08 , H01G4/1218 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/02334 , H01L21/02356 , H01L21/3141 , H01L21/31691 , H01L27/10814 , H01L27/10852 , H01L28/55 , H01L28/90
摘要： A capacitor insulating film may include, but is not limited to, strontium, titanium, and oxygen. The capacitor insulating film has a ratio of a spectrum intensity of (200) crystal face of the capacitor insulating film to a spectrum intensity of (111) crystal face of the capacitor insulating film in the range of 1.0 to 2.3. Each of the spectrum intensities of (200) crystal face and (111) crystal face is measured by an X-ray diffraction method.
摘要翻译：电容器绝缘膜可以包括但不限于锶，钛和氧。电容绝缘膜的电容绝缘膜的（200）晶面的光谱强度与电容绝缘膜的（111）晶面的光谱强度的比在1.0〜2.3的范围内。（200）晶面和（111）晶面的每个光谱强度通过X射线衍射法测量。

5. 发明申请

US20120064690A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120064690A1
公开(公告)日：2012-03-15
申请号：US13227788
申请日：2011-09-08
申请人： Toshiyuki HIROTA , Takakazu KIYOMURA
发明人： Toshiyuki HIROTA , Takakazu KIYOMURA
IPC分类号： H01L21/02
CPC分类号： H01L28/75 , H01L21/02189 , H01L21/0228 , H01L21/02304 , H01L21/02356 , H01L21/02362 , H01L27/0207 , H01L27/10814 , H01L27/10852 , H01L27/10894 , H01L28/40
摘要： A method for manufacturing a semiconductor device includes at least forming a lower electrode made of titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide, in which at least the uppermost layer of the dielectric film is formed by an atomic layer deposition (ALD) method on the lower electrode, forming a first protective film on the dielectric film without exceeding the film forming temperature of the ALD method over 70° C., and forming an upper electrode made of a titanium nitride on the first protective film.
摘要翻译：一种半导体器件的制造方法，至少在半导体衬底上形成由氮化钛构成的下部电极，形成包含氧化锆的电介质膜，其中至少电介质膜的最上层通过原子层沉积形成（ ALD）方法，在绝缘膜上形成第一保护膜，而不超过70℃的ALD法的成膜温度，并在第一保护膜上形成由氮化钛制成的上电极。

6. 发明申请

US20120064689A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20120064689A1
公开(公告)日：2012-03-15
申请号：US13227667
申请日：2011-09-08
申请人： Toshiyuki HIROTA , Takakazu KIYOMURA
发明人： Toshiyuki HIROTA , Takakazu KIYOMURA
IPC分类号： H01L21/02
CPC分类号： H01L28/60 , H01L21/02178 , H01L21/02189 , H01L21/022 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L27/0207 , H01L27/10814 , H01L27/10852 , H01L27/10894 , H01L28/40 , H01L28/75 , H01L28/91
摘要： A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode.
摘要翻译：一种半导体器件的制造方法，至少在半导体基板上形成包含氮化钛的下电极，在下电极上形成包含氧化锆作为主要成分的电介质膜，在电介质上形成包含钛化合物的第一保护膜并且在第一保护膜上形成包括氮化钛的上电极。该方法可以包括在下电极上形成电介质膜的步骤之前在下电极上形成第二保护膜的步骤。

7. 发明申请

US20080305611A1 COATING COMPOSITION FOR FORMING OXIDE FILM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：用于形成氧化膜的涂料组合物及其制造使用其的半导体器件的方法
公开(公告)号：US20080305611A1
公开(公告)日：2008-12-11
申请号：US12135412
申请日：2008-06-09
申请人： Toshiyuki HIROTA
发明人： Toshiyuki HIROTA
IPC分类号： H01L21/762 , C09D183/00
CPC分类号： C09D183/04 , C09D183/16 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/02337 , H01L21/02348 , H01L21/3121 , H01L21/3124 , H01L21/3125 , H01L21/316 , C08L83/00
摘要： A coating composition for forming an oxide film, which can suppress the phenomenon of an increased wet etching rate caused by a part of the SOG film embedded inside a groove becoming low-density, and which can suppress the volume expansion coefficient to a low level, and a method for producing a semiconductor device using the same are provided. An oxide film is formed inside a groove by: coating a coating composition for forming an oxide film, which contains a polysilazane or a hydrogenated silsesquioxane, and a polysilane, on a substrate having a groove; and thereafter heat treatment in an oxidizing atmosphere. This method is suitable for forming a device isolation region and a wiring interlayer dielectric film.
摘要翻译：一种用于形成氧化膜的涂料组合物，其可以抑制由嵌入在槽内的SOG膜的一部分变成低密度引起的增加的湿蚀刻速率的现象，并且可以将体积膨胀系数抑制到低水平，提供了使用该半导体器件的半导体器件的制造方法。通过在具有凹槽的基板上涂覆含有聚硅氮烷或氢化倍半硅氧烷和聚硅烷的氧化膜形成用涂料组合物，在凹槽内形成氧化膜; 然后在氧化气氛中进行热处理。该方法适用于形成器件隔离区域和布线层间绝缘膜。

8. 发明申请

US20090045485A1 CAPACITOR, METHOD OF MANUFACTURING CAPACITOR, CAPACITOR MANUFACTURING APPARATUS, AND SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：电容器，制造电容器的方法，电容器制造装置和半导体存储器件
公开(公告)号：US20090045485A1
公开(公告)日：2009-02-19
申请号：US12188307
申请日：2008-08-08
申请人： Toshiyuki HIROTA
发明人： Toshiyuki HIROTA
IPC分类号： H01L27/13 , C23C14/34 , H01L21/20
CPC分类号： H01L28/40 , C23C16/403 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02263 , H01L21/3142 , H01L21/31604 , H01L21/3162 , H01L27/10852 , H01L28/65
摘要： The present invention provides a capacitor including: an under electrode; an upper electrode; and a dielectric film which is provided between the under electrode and the upper electrode, wherein at least a portion of the dielectric film is composed of an aluminum oxide film deposited by an atomic layer deposition method and a titanium oxide film deposited by the atomic layer deposition method. An aluminum composition ratio x and a titanium composition ratio y in the dielectric film preferably comply with 7≦[x/(x+y)]×100≦35.
摘要翻译：本发明提供一种电容器，包括：下电极; 上电极; 以及设置在下电极和上电极之间的电介质膜，其中电介质膜的至少一部分由通过原子层沉积法沉积的氧化铝膜和通过原子层沉积沉积的氧化钛膜构成方法。电介质膜中的铝组成比x和钛组成比y优选地符合7 <= [x /（x + y）]×100≤35。

9. 发明申请

US20120061800A1 CAPACITOR ELEMENT, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：电容器元件及其半导体器件的制造方法
公开(公告)号：US20120061800A1
公开(公告)日：2012-03-15
申请号：US13046437
申请日：2011-03-11
申请人： Toshiyuki HIROTA
发明人： Toshiyuki HIROTA
IPC分类号： H01L29/02
CPC分类号： H01L28/75 , H01L27/10852
摘要： A semiconductor device includes a first capacitive insulating film, a first electrode, and a first barrier film. The first electrode has a first surface containing nitrogen. The first barrier film is between the first capacitive insulating film and the first electrode. The first barrier film faces the first surface of the first electrode. The first barrier film includes zinc oxide. The first barrier film is conductive.
摘要翻译：半导体器件包括第一电容绝缘膜，第一电极和第一阻挡膜。第一电极具有含氮的第一表面。第一阻挡膜位于第一电容绝缘膜和第一电极之间。第一阻挡膜面对第一电极的第一表面。第一阻挡膜包括氧化锌。第一阻挡膜是导电的。

10. 发明申请

US20110128222A1 INFORMATION PROCESSING APPARATUS AND CONTROL METHOD 审中-公开
标题翻译：信息处理装置和控制方法
公开(公告)号：US20110128222A1
公开(公告)日：2011-06-02
申请号：US12904962
申请日：2010-10-14
申请人： Toshiyuki HIROTA , Koichi KAJI , Masao TESHIMA
发明人： Toshiyuki HIROTA , Koichi KAJI , Masao TESHIMA
IPC分类号： G06F3/033
CPC分类号： H04W88/06 , G06F1/162 , G06F1/1684 , G06F1/1698 , G06F2200/1614 , H01Q1/2266 , H01Q1/52 , H01Q5/314 , H01Q5/378 , H01Q9/145 , H01Q9/42
摘要： According to one embodiment, a switch circuit switches a resonance frequency band of an antenna in a display unit between first and second resonance frequency bands. The second resonance frequency band is overlapped with a part of the first resonance frequency band and is higher than the first resonance frequency band. A wireless communication module wirelessly transmits and receives signals using a transmission frequency band and a reception frequency band which are included in the first resonance frequency band. A screen image orientation control module changes an orientation of a screen image displayed on the display unit. A resonance frequency shift module shifts the resonance frequency band of the antenna from the first resonance frequency band to the second frequency band by controlling the switch circuit when the orientation of the screen image is an orientation in which the antenna is positioned on a downward side of the screen image.
摘要翻译：根据一个实施例，开关电路在第一和第二谐振频带之间切换显示单元中的天线的共振频带。第二共振频带与第一共振频带的一部分重叠并且高于第一共振频带。无线通信模块使用包括在第一共振频带中的发送频带和接收频带来无线发送和接收信号。屏幕图像取向控制模块改变显示在显示单元上的屏幕图像的方向。共振频移模块通过控制开关电路将天线的共振频带从第一共振频带移动到第二频带，当屏幕图像的取向是天线位于屏幕图像。

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