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1. 发明申请

US20120309163A1 METHOD OF FORMING TITANIUM OXIDE FILM HAVING RUTILE CRYSTALLINE STRUCTURE 审中-公开
标题翻译：形成具有结晶结构的氧化钛薄膜的方法
公开(公告)号：US20120309163A1
公开(公告)日：2012-12-06
申请号：US13476617
申请日：2012-05-21
申请人： Takakazu KIYOMURA , Toshiyuki HIROTA , Yuichiro MOROZUMI , Shingo HISHIYA
发明人： Takakazu KIYOMURA , Toshiyuki HIROTA , Yuichiro MOROZUMI , Shingo HISHIYA
IPC分类号： H01G13/00 , H01L21/02
CPC分类号： H01L28/40 , H01L21/02186 , H01L21/0228 , H01L21/02304 , H01L21/02356 , H01L27/10817 , H01L27/10852 , H01L27/10894 , H01L28/91
摘要： The invention provides a method of forming a titanium oxide film having a rutile crystalline structure that has high permittivity. The titanium oxide film having a rutile crystalline structure is produced by forming an amorphous titanium oxide film on an amorphous zirconium oxide film using methyl cyclopentadienyl tris(dimethylamino)titanium as a titanium precursor by an ALD method, and crystallizing the amorphous titanium oxide film by annealing at a temperature of 300° C. or higher.
摘要翻译：本发明提供了形成具有高介电常数的金红石晶体结构的氧化钛膜的方法。具有金红石结晶结构的氧化钛膜通过使用甲基环戊二烯基三（二甲基氨基）钛作为钛前体，通过ALD法在无定形氧化锆膜上形成无定形氧化钛膜，并通过退火使非晶态氧化钛膜结晶温度在300℃以上。

2. 发明申请

US20090311498A1 Transparent conductive film 审中-公开
标题翻译：透明导电膜
公开(公告)号：US20090311498A1
公开(公告)日：2009-12-17
申请号：US11663611
申请日：2005-09-14
申请人： Takakazu Kiyomura , Toshio Tsuji , Atsushi Saito , Chikao Mamiya , Ichiro Kudo
发明人： Takakazu Kiyomura , Toshio Tsuji , Atsushi Saito , Chikao Mamiya , Ichiro Kudo
IPC分类号： B32B9/00 , C23C16/513
CPC分类号： C23C16/403 , C23C16/0272 , C23C16/405 , C23C16/407 , Y10T428/24992
摘要： An objective of the present invention is to provide a transparent conductive film exhibiting excellent adhesion to a substrate and excellent crack resistance, together with high transparency and conductivity. Also disclosed is a transparent conductive film comprising a substrate having thereon: a low density metal oxide layer made of metal oxide, and a high density metal oxide layer made of metal oxide that are alternately laminated layer by layer, wherein the transparent conductive film satisfies a condition specified by the following inequality (1); 1.01≦M2/M1≦1.400 (1), provided that a density of the low density metal oxide layer and a density of the high density metal oxide layer are represented by M1 and M2, respectively.
摘要翻译：本发明的目的是提供一种对基材具有优异粘合性和优异的抗裂性以及高透明度和导电性的透明导电膜。还公开了一种透明导电膜，其包括其上具有金属氧化物的低密度金属氧化物层和由金属氧化物制成的高密度金属氧化物层的基板，所述透明导电膜交替层叠，其中所述透明导电膜满足条件由以下不等式（1）指定; 1.01M2 / M1，只要低密度金属氧化物层的密度和高密度金属氧化物层的密度分别由M1和M2表示。

3. 发明申请

US20080169520A1 DIELETRIC FILM LAYERED PRODUCT, SEMICONDUCTOR APPARATUS AND PRODUCTION METHODS OF THE SAME 有权
标题翻译： DIELETRIC FILM层状产品，半导体设备及其生产方法
公开(公告)号：US20080169520A1
公开(公告)日：2008-07-17
申请号：US11972729
申请日：2008-01-11
申请人： Takakazu KIYOMURA , Takuo Ohashi
发明人： Takakazu KIYOMURA , Takuo Ohashi
IPC分类号： H01L29/78 , H01L23/58 , H01L21/31 , H01L21/336
CPC分类号： H01L21/02148 , H01L21/022 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/3141 , H01L21/3143 , H01L21/31604 , H01L21/31645 , H01L27/10814 , H01L27/10873 , H01L29/495 , H01L29/513 , H01L29/517
摘要： In order to provide a dielectric film which can avoid both boron leakage and an increase of the leak current, a semiconductor apparatus which has the dielectric film, a production method of the dielectric film and a production method of the semiconductor apparatus, a dielectric film layered product is applied which includes: a semiconductor substrate (2); a first hafnium-containing silicon oxide nitride layer (3a) made from a microcrystalline structure; a second hafnium-containing silicon oxide nitride layer (3b) made from a non-crystalline structure; and a layered film which is made from the first and second hafnium-containing silicon oxide nitride layers that are layered on the semiconductor substrate, and which has a nitrogen ratio of 15-40 atomic percent.
摘要翻译：为了提供能够避免硼泄漏和漏电流增加的电介质膜，具有电介质膜的半导体装置，电介质膜的制造方法以及半导体装置的制造方法，分层产品包括：半导体衬底（2）; 由微晶结构制成的第一含铪氧化硅氮化物层（3a）由非晶结构制成的第二含铪氧化硅氮化物层（3b）; 以及由层叠在半导体基板上的第一和第二含铪氧化硅氮化物层构成的层叠膜，氮比为15〜40原子％。

4. 发明申请

US20060199014A1 Method for forming thin film and base and having thin film formed by such method 失效
标题翻译：用这种方法形成薄膜和基底并具有薄膜的方法
公开(公告)号：US20060199014A1
公开(公告)日：2006-09-07
申请号：US10544084
申请日：2004-07-08
申请人： Hiromoto II , Toshio Tsuji , Chikao Mamiya , Kazuhiro Fukuda , Kiyoshi Oishi , Takakazu Kiyomura
发明人： Hiromoto II , Toshio Tsuji , Chikao Mamiya , Kazuhiro Fukuda , Kiyoshi Oishi , Takakazu Kiyomura
IPC分类号： B32B9/00
CPC分类号： C23C16/45595 , C23C16/08 , C23C16/18 , C23C16/505 , C23C16/56 , Y10T428/31504
摘要： A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.
摘要翻译：一种形成膜的方法，包括第一工艺和第二工艺，所述第一工艺包括以下步骤：将放电气体供应到在大气压或大气压附近产生高频电场A的第一放电空间，由此放电气体是激动的将激发的放电气体的能量转移到成膜气体，由此成膜气体被激发; 并且将基板暴露于成膜气体以在基板上形成膜，第二工序包括以下步骤：将含氧化气体的气体供给到在大气中或接近大气压下产生高频电场B的第二放电空间由此含有氧化气体的气体是激发的; 并且在第一工序中形成的膜暴露于含有氧化气体的激发气体。

5. 发明授权

US08357583B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08357583B2
公开(公告)日：2013-01-22
申请号：US13227667
申请日：2011-09-08
申请人： Toshiyuki Hirota , Takakazu Kiyomura
发明人： Toshiyuki Hirota , Takakazu Kiyomura
IPC分类号： H01L21/02
CPC分类号： H01L28/60 , H01L21/02178 , H01L21/02189 , H01L21/022 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L27/0207 , H01L27/10814 , H01L27/10852 , H01L27/10894 , H01L28/40 , H01L28/75 , H01L28/91
摘要： A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode.
摘要翻译：一种半导体器件的制造方法，至少在半导体基板上形成包含氮化钛的下电极，在下电极上形成包含氧化锆作为主要成分的电介质膜，在电介质上形成包含钛化合物的第一保护膜并且在第一保护膜上形成包括氮化钛的上电极。该方法可以包括在下电极上形成电介质膜的步骤之前在下电极上形成第二保护膜的步骤。

6. 发明授权

US08283227B2 Method for manufacturing semiconductor memory device 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US08283227B2
公开(公告)日：2012-10-09
申请号：US13282814
申请日：2011-10-27
申请人： Toshiyuki Hirota , Takakazu Kiyomura
发明人： Toshiyuki Hirota , Takakazu Kiyomura
IPC分类号： H01L21/8242
CPC分类号： H01L27/10817 , H01L27/10852 , H01L28/57
摘要： In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the crystal of the dielectric film is not grown on the surface of the dielectric film, the first upper electrode and the dielectric film are heat-treated at a temperature that the crystal of the dielectric film is grown to convert at least a portion of the dielectric film into a crystalline state. Thereafter, a second upper electrode is formed on the surface of the first upper electrode.
摘要翻译：在制造半导体存储器件的方法中，在半导体衬底上形成包括氮化钛膜的三维下电极，并且在下电极的表面上形成电介质膜。在电介质膜的晶体不在电介质膜的表面上生长的温度下形成第一上电极之后，在电介质膜的晶体的温度下对第一上电极和电介质膜进行热处理生长以将至少一部分电介质膜转化为结晶状态。此后，在第一上电极的表面上形成第二上电极。

7. 发明申请

US20120244721A1 FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM 有权
标题翻译：薄膜成型方法，薄膜成型装置和储存介质
公开(公告)号：US20120244721A1
公开(公告)日：2012-09-27
申请号：US13429742
申请日：2012-03-26
申请人： Yuichiro MOROZUMI , Takuya SUGAWARA , Koji AKIYAMA , Shingo HISHIYA , Toshiyuki HIROTA , Takakazu KIYOMURA
发明人： Yuichiro MOROZUMI , Takuya SUGAWARA , Koji AKIYAMA , Shingo HISHIYA , Toshiyuki HIROTA , Takakazu KIYOMURA
IPC分类号： H01L21/31 , C23C16/455 , C23C16/52
CPC分类号： H01L21/02189 , C23C16/18 , C23C16/405 , C23C16/45529 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L28/40 , H01L29/66181
摘要： A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.
摘要翻译：形成包括氧化锆膜的电介质膜的方法包括：通过提供锆材料和氧化剂在待处理的基板上形成氧化锆膜，所述锆材料包括包含结构中的环戊二烯基环的Zr化合物，并且通过供给钛材料和氧化剂在氧化锆膜上形成氧化钛膜，所述钛材料包括结构中包含环戊二烯基环的Ti化合物。

8. 发明申请

US20120077322A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD 失效
标题翻译：半导体器件及其制造方法和吸附位置阻塞原子层沉积法
公开(公告)号：US20120077322A1
公开(公告)日：2012-03-29
申请号：US13245515
申请日：2011-09-26
申请人： Toshiyuki HIROTA , Takakazu KIYOMURA , Yuichiro MOROZUMI , Shingo HISHIYA
发明人： Toshiyuki HIROTA , Takakazu KIYOMURA , Yuichiro MOROZUMI , Shingo HISHIYA
IPC分类号： H01L21/02 , H01L21/31
CPC分类号： H01L28/40 , H01L21/02178 , H01L21/02186 , H01L21/02189 , H01L21/022 , H01L21/0228
摘要： To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14′ atoms/cm2. Further, to achieve the area density, there is employed a combination of formation of a dielectric film using a general ALD method and Al doping using an adsorption site blocking ALD method including adsorbing a blocker molecule restricting an adsorption site of an Al source, adsorbing the Al source, and introducing a reaction gas for reaction.
摘要翻译：为了提供具有良好结晶性的电介质膜，同时抑制尺寸效应的影响并且防止电介质膜被Al掺杂层划分，尽管提供了用于改善电介质膜中的泄漏特性的Al掺杂层电介质膜具有至少一个Al掺杂层，并且Al掺杂层的一个层中的Al原子的面密度小于1.4E + 14'原子/ cm 2。此外，为了实现面积密度，采用通常的ALD法形成电介质膜和使用吸附位阻挡ALD法的Al掺杂的组合，其包括吸附限制Al源的吸附位点的阻断分子，吸附 Al源，并引入反应气体进行反应。

9. 发明申请

US20110052810A1 FILM FORMING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：电影形成方法和储存媒体
公开(公告)号：US20110052810A1
公开(公告)日：2011-03-03
申请号：US12918152
申请日：2009-02-18
申请人： Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
发明人： Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
IPC分类号： C23C16/22
CPC分类号： H01L21/02197 , C23C16/409 , C23C16/45531 , H01G4/1227 , H01L21/0228 , H01L21/31691 , H01L28/55
摘要： An AxByOz-type oxide film can be produced by introducing a first organic metal compound source material, a second organic metal compound source material and an oxidizer into a processing chamber and forming the AxByOz-type oxide film on a substrate. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizer to produce CO is used as the first organic metal compound source material, a metal alkoxide is used as the second organic metal compound source material, and gaseous O3 or O2 is used as the oxidizer. It is absolutely necessary to introduce the second organic metal compound source material immediately before the introduction of the oxidizer.
摘要翻译：可以通过将第一有机金属化合物源材料，第二有机金属化合物源材料和氧化剂引入到处理室中并在基板上形成AxByOz型氧化物膜来制造AxByOz型氧化物膜。在制造中，使用具有低蒸气压并具有能够用氧化剂分解以产生CO的有机配体的化合物作为第一有机金属化合物源材料，使用金属醇盐作为第二有机金属化合物源材料和气态O 3或O 2用作氧化剂。在引入氧化剂之前，绝对需要引入第二有机金属化合物源材料。

10. 发明授权

US07847328B2 Capacitor electrode, method for manufacturing the same, and semiconductor device 有权
标题翻译：电容器电极及其制造方法以及半导体装置
公开(公告)号：US07847328B2
公开(公告)日：2010-12-07
申请号：US12392492
申请日：2009-02-25
申请人： Takakazu Kiyomura
发明人： Takakazu Kiyomura
IPC分类号： H01L21/02
CPC分类号： C23C16/40 , C23C16/45531 , H01G4/008 , H01G4/33 , H01L21/31691 , H01L28/55 , Y10T428/26
摘要： A capacitor electrode is composed of an SrRuO3 film including first and second surfaces opposed to each other. The capacitor electrode contains a 10 atom % or less trivalent element in a region ranging from a position a predetermined distance away from the first surface in the thickness direction thereof up to the second surface side.
摘要翻译：电容器电极由包括彼此相对的第一和第二表面的SrRuO 3膜构成。所述电容电极在从厚度方向的所述第一面的预定距离的位置到所述第二面侧的范围内含有10原子％以下的三价元素。

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