专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5750436A Thermal processing method and apparatus therefor 失效
公开(公告)号：US5750436A
公开(公告)日：1998-05-12
申请号：US485506
申请日：1995-06-07
申请人： Kenichi Yamaga , Yuichi Mikata , Akihito Yamamoto
发明人： Kenichi Yamaga , Yuichi Mikata , Akihito Yamamoto
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/54 , C23C16/56 , H01L21/31 , H01L21/316
CPC分类号： C23C16/4409 , C23C16/345 , C23C16/455 , C23C16/54 , C23C16/56
摘要： An Si.sub.3 N.sub.4 layer is formed on a surface of a wafer, which is an object to be processed, at a high temperature of, for example, 780.degree. C., using a vertical thermal processing apparatus having a reaction tube of a double-wall structure comprising an inner tube and an outer tube in which a predetermined reduced-pressure status is maintained within the reaction tube while a reaction gas comprising, for example, SiH.sub.2 Cl.sub.2 and NH.sub.3 is made to flow from an inner side to an outer side of the inner tube by the action of a first gas supply pipe and first exhaust pipe provided in the thermal processing apparatus. Next, the temperature in the interior of the reaction tube is raised to, for example, 1000.degree. C., a reaction gas comprising, for example, H.sub.2 O vapor and HCl is made to flow from the outer side to the inner side of the inner tube by the action of a second gas supply pipe and second exhaust pipe, and an SiO.sub.2 layer is formed by the oxidation of the surface of the Si.sub.3 N.sub.4 layer formed on the surface of the wafer, under normal-pressure conditions. The use of a combined chamber enables the implementation of film formation and either oxidation or diffusion processing without having to remove the object to be processed from the reaction tube, and thus prevents the intrusion of a natural oxide layer or the incorporation of particles into a thin film structure of, for example, SiO.sub.2 and Si.sub.3 N.sub.4 layers used as a multi-layer insulating film for devices such as DRAMs.

2. 发明授权

US06188838B1 Apparatus for heat treating a semiconductor wafer to reduce stress 失效
标题翻译：用于热处理半导体晶片以减少应力的装置
公开(公告)号：US06188838B1
公开(公告)日：2001-02-13
申请号：US09240669
申请日：1999-02-02
申请人： Yuichi Mikata , Akihito Yamamoto
发明人： Yuichi Mikata , Akihito Yamamoto
IPC分类号： F26B330
CPC分类号： H01L21/67309 , C30B31/14 , H01L21/67103 , H01L21/68721 , H01L21/68735 , H01L21/68785 , Y10S438/931
摘要： A susceptor in a semiconductor wafer heat treatment apparatus holds a wafer such that the wafer is made flat at a heat treatment temperature. In particular, the susceptor is constituted by an elastic platy member which is convex upward with respect to the direction of the gravity. Therefore, when the wafer is subjected to a high-temperature heat treatment, a crystal defect in the wafer can be suppressed.
摘要翻译：半导体晶片热处理装置中的感受体保持晶片，使得晶片在热处理温度下平坦化。特别地，感受体由相对于重力方向向上凸起的弹性板状构件构成。因此，当对晶片进行高温热处理时，可以抑制晶片中的晶体缺陷。

3. 发明授权

US5484484A Thermal processing method and apparatus therefor 失效
标题翻译：热处理方法及其设备
公开(公告)号：US5484484A
公开(公告)日：1996-01-16
申请号：US269039
申请日：1994-06-30
申请人： Kenichi Yamaga , Yuichi Mikata , Akihito Yamamoto
发明人： Kenichi Yamaga , Yuichi Mikata , Akihito Yamamoto
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/54 , C23C16/56 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/345 , C23C16/455 , C23C16/54 , C23C16/56
摘要： An Si.sub.3 N.sub.4 layer is formed on a surface of a wafer, which is an object to be processed, at a high temperature of, for example, 780.degree. C., using a vertical thermal processing apparatus having a reaction tube of a double-wall structure comprising an inner tube and an outer tube in which a predetermined reduced-pressure status is maintained within the reaction tube while a reaction gas comprising, for example, SiH.sub.2 Cl.sub.2 and NH.sub.3 is made to flow from an inner side to an outer side of the inner tube by the action of a first gas supply pipe and first exhaust pipe provided in the thermal processing apparatus. Next, the temperature in the interior of the reaction tube is raised to, for example, 1000.degree. C., a reaction gas comprising, for example, H.sub.2 O vapor and HCl is made to flow from the outer side to the inner side of the inner tube by the action of a second gas supply pipe and second exhaust pipe, and an SiO.sub.2 layer is formed by the oxidation of the surface of the Si.sub.3 N.sub.4 layer formed on the surface of the wafer, under normal-pressure conditions. The use of a combined chamber enables the implementation of film formation and either oxidation or diffusion processing without having to remove the object to be processed from the reaction tube, and thus prevents the intrusion of a natural oxide layer or the incorporation of particles into a thin film structure of, for example, SiO.sub.2 and Si.sub.3 N.sub.4 layers used as a multi-layer insulating film for devices such as DRAMs.
摘要翻译：使用具有双壁结构的反应管的垂直热处理装置，在作为被处理物的晶片的表面上，例如在780℃的高温下形成Si 3 N 4层包括内管和外管，其中在反应管内保持预定的减压状态，同时使包括例如SiH 2 Cl 2和NH 3的反应气体从内管的内侧流到外管通过设置在热处理装置中的第一气体供给管和第一排气管的作用。接下来，将反应管内部的温度升高至例如1000℃，由例如H 2 O蒸气和HCl构成的反应气体从内侧的内侧流向内侧通过第二气体供给管和第二排气管的作用，通过在常压条件下氧化形成在晶片表面上的Si 3 N 4层的表面形成SiO 2层。使用组合室能够实现成膜和氧化或扩散处理，而不必从反应管中除去待处理的物体，从而防止天然氧化物层的侵入或将颗粒引入薄的例如用作用于诸如DRAM的器件的多层绝缘膜的SiO 2和Si 3 N 4层的膜结构。

4. 发明授权

US5893760A Method of heat treating a semiconductor wafer to reduce stress 失效
标题翻译：对半导体晶片进行热处理以减少应力的方法
公开(公告)号：US5893760A
公开(公告)日：1999-04-13
申请号：US829700
申请日：1997-03-26
申请人： Yuichi Mikata , Akihito Yamamoto
发明人： Yuichi Mikata , Akihito Yamamoto
IPC分类号： H01L21/683 , C30B31/14 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/22 , H01L21/31 , H01L21/324 , H01L21/673 , H01L21/687 , H01L41/08
CPC分类号： H01L21/67309 , C30B31/14 , H01L21/67103 , H01L21/68721 , H01L21/68735 , H01L21/68785 , Y10S438/931
摘要： A susceptor in a semiconductor wafer heat treatment apparatus holds a wafer such that the wafer is made flat at a heat treatment temperature. In particular, the susceptor is constituted by an elastic platy member which is convex upward with respect to the direction of the gravity. Therefore, when the wafer is subjected to a high-temperature heat treatment, a crystal defect in the wafer can be suppressed.
摘要翻译：半导体晶片热处理装置中的感受体保持晶片，使得晶片在热处理温度下平坦化。特别地，感受体由相对于重力方向向上凸起的弹性板状构件构成。因此，当对晶片进行高温热处理时，可以抑制晶片中的晶体缺陷。

5. 发明申请

US20120181598A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20120181598A1
公开(公告)日：2012-07-19
申请号：US13430153
申请日：2012-03-26
申请人： Masayuki ICHIGE , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki ICHIGE , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

6. 发明申请

US20120112263A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120112263A1
公开(公告)日：2012-05-10
申请号：US13351965
申请日：2012-01-17
申请人： Masayuki Tanaka , Daikuse Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
发明人： Masayuki Tanaka , Daikuse Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7883
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极，所述第二绝缘膜包括下氮化硅膜，形成在所述下氮化硅膜上的下氧化硅膜，形成在所述下氧化硅膜上并含有金属元素的中间绝缘膜，所述中间绝缘膜具有相对电介质大于7的常数，形成在中间绝缘膜上的上部氧化硅膜和形成在上部氧化硅膜上的上部氮化硅膜。

7. 发明授权

US07982259B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US07982259B2
公开(公告)日：2011-07-19
申请号：US11687758
申请日：2007-03-19
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

8. 发明授权

US07954939B2 Decurling mechanism 有权
标题翻译：去卷曲机制
公开(公告)号：US07954939B2
公开(公告)日：2011-06-07
申请号：US12360696
申请日：2009-01-27
申请人： Akihito Yamamoto , Yoshitsugu Tokai
发明人： Akihito Yamamoto , Yoshitsugu Tokai
IPC分类号： B41J2/01 , G03G15/00
CPC分类号： G03G15/652 , B41J11/0005 , G03G2215/00662
摘要： A decurling mechanism for performing a decurling process of correcting the curl of paper includes: a first roller; a second roller disposed travelably around the first roller; and a roller position changing mechanism for changing the second roller to a plurality of positions set on a traveling path of the second roller. The plurality of positions include a decurling position in which the decurling process to the paper is enabled and the paper is conveyed while being pinched between the first and second rollers, a conveyance position in which the decurling process to the paper is disabled and the paper is conveyed while being pinched between the first and second rollers and a pinch release position in which the paper is released from the pinch between the first and second rollers.
摘要翻译：用于进行纸张卷曲的卷曲消除处理的卷曲消除机构包括：第一辊; 围绕第一辊布置的第二辊; 以及用于将第二辊改变为设置在第二辊的行进路径上的多个位置的辊位置改变机构。多个位置包括一个卷曲消除位置，在该卷曲消除位置中纸张的卷曲消除处理能够进行，并且纸张在被夹在第一和第二辊子之间被输送的情况下，纸张的去卷积处理被禁用的传送位置和纸张是在被夹持在第一和第二辊之间的同时传送，以及夹紧释放位置，其中纸从第一和第二辊之间的夹持松开。

9. 发明授权

US07635890B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07635890B2
公开(公告)日：2009-12-22
申请号：US11783934
申请日：2007-04-13
申请人： Yoshio Ozawa , Akihito Yamamoto , Masayuki Tanaka , Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka
发明人： Yoshio Ozawa , Akihito Yamamoto , Masayuki Tanaka , Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka
IPC分类号： H01L29/76
CPC分类号： H01L29/7883 , H01L27/115 , H01L27/11521 , H01L29/42324
摘要： A semiconductor device includes a semiconductor substrate, a plurality of nonvolatile memory cells provided on the semiconductor substrate, each of the plurality of nonvolatile memory cells comprising a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a control gate electrode provided above the charge storage layer, a second insulating film provided between the control gate electrode and the charge storage layer, the second insulating film between adjacent charge storage layers including a first region having permittivity lower than that of the second insulating film on a top surface of the charge storage layer in a cross-section view of a channel width direction of the nonvolatile memory cell, and the first region having composition differing from that of the second insulating film on the top surface of the charge storage layer.
摘要翻译：半导体器件包括半导体衬底，设置在半导体衬底上的多个非易失性存储单元，所述多个非易失性存储单元中的每一个包括设置在所述半导体衬底上的第一绝缘膜，设置在所述第一绝缘膜上的电荷存储层，设置在所述电荷存储层上方的控制栅电极，设置在所述控制栅电极和所述电荷存储层之间的第二绝缘膜，所述相邻电荷存储层之间的所述第二绝缘膜包括具有低于所述第二绝缘膜的介电常数的第一区域在电荷存储层的顶表面上，以非易失性存储单元的沟道宽度方向的横截面视图，并且第一区域具有与电荷存储层的顶表面上的第二绝缘膜不同的组成。

10. 发明申请

US20090059372A1 OPTICAL IMAGE STABILIZER 审中-公开
标题翻译：光学图像稳定器
公开(公告)号：US20090059372A1
公开(公告)日：2009-03-05
申请号：US12198337
申请日：2008-08-26
申请人： Takahiro Kawauchi , Akihito Yamamoto , Toru Sawada
发明人： Takahiro Kawauchi , Akihito Yamamoto , Toru Sawada
IPC分类号： G02B27/64
CPC分类号： G02B7/023 , G02B27/64
摘要： Disclosed is an optical image stabilizer having a low sliding load, a smooth operation, and a small thickness. When a lens holder and an X slider are moved in the X direction, small balls roll between the side surface of the lens holder and the inner surface of a frame of a Y slider, thereby reducing a sliding load therebetween. When the lens holder and the Y slider are moved in the X direction, small balls roll between the side surface of the lens holder and the inner surface of the frame of the X slider, thereby reducing a sliding load therebetween. Therefore, it is possible to achieve an optical image stabilizer having low power consumption, a smooth operation, and high responsibility. In addition, the thickness of the lens holder is equal to or smaller than the sum of the thicknesses of the X slider and the Y slider overlapped with each other. Therefore, it is possible to achieve an optical image stabilizer having a small thickness.
摘要翻译：公开了具有低滑动负载，平滑操作和小厚度的光学图像稳定器。当透镜支架和X滑块在X方向上移动时，小球在透镜保持器的侧表面和Y滑块的框架的内表面之间滚动，从而减小它们之间的滑动负载。当透镜架和Y滑块沿X方向移动时，小球在透镜架的侧表面和X滑块的框架的内表面之间滚动，从而减小它们之间的滑动负载。因此，可以实现低功耗，平稳运行和高责任度的光学图像稳定器。此外，透镜保持器的厚度等于或小于X滑块和Y滑块彼此重叠的厚度之和。因此，可以实现厚度小的光学图像稳定器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式