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1. 发明授权

US4731641A Avalanche photo diode with quantum well layer 失效
标题翻译：具有量子阱层的雪崩光电二极管
公开(公告)号：US4731641A
公开(公告)日：1988-03-15
申请号：US892479
申请日：1986-08-05
申请人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
IPC分类号： H01L31/107 , H01L31/18 , H01L29/201 , H01L27/14 , H01L31/08
CPC分类号： H01L31/1075 , H01L31/18
摘要： An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
摘要翻译：具有量子阱层的雪崩光电二极管，其中在载流子倍增区域中形成由两个不同半导体构成的薄膜周期性多层结构，载流子的有效电离系数比由薄膜形成的量子阱层提高，多层周期性结构，只有电离系数较大的电子注入乘法区域，从而降低APD中的噪声。

2. 发明授权

US4720835A Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output 失效
标题翻译：具有振荡波长和相位调制光输出的集成半导体发光元件
公开(公告)号：US4720835A
公开(公告)日：1988-01-19
申请号：US767152
申请日：1985-08-19
申请人： Shigeyuki Akiba , Katsuyuki Utaka , Yukio Noda , Yukitoshi Kushiro
发明人： Shigeyuki Akiba , Katsuyuki Utaka , Yukio Noda , Yukitoshi Kushiro
IPC分类号： G02F1/025 , H01S5/00 , H01S5/062 , H01S5/0625 , H01S5/12 , H01S5/16 , H01S3/19
CPC分类号： H01S5/164 , H01S5/06258 , H01S5/12 , H01S5/06236 , H01S5/06246 , H01S5/124
摘要： A semiconductor light emitting element is disclosed, which is provided with a light emitting region having a diffraction grating formed by periodic corrugations, a modulation region having an external waveguide layer optically connected directly to the light emitting region and a pn junction separated from a pn junction of the light emitting region and a window region formed of a semiconductor having a larger energy gap than that of a light emitting layer of the light emitting region and extending from at least one end of the light emitting region and the external waveguide layer. The refractive index of the external waveguide is varied through utilization of the electrooptic effect so that the frequency or phase of light stably oscillating at a single wavelength is precisely controlled or modulated. In particular, when the window region is formed only outside the light emitting region, frequency modulation is carried out, and when the window region is formed at least outside the modulation region, phase modulation takes place.
摘要翻译：公开了一种半导体发光元件，其设置有具有由周期性波纹形成的衍射光栅的发光区域，具有与发光区域直接光学连接的外部波导层的调制区域和与pn结分离的pn结的发光区域和由与发光区域的发光层相比能量间隙大的半导体形成的窗口区域，并且从发光区域和外部波导层的至少一端延伸。通过利用电光效应来改变外部波导的折射率，从而精确地控制或调制在单个波长处稳定振荡的光的频率或相位。特别地，当窗口区仅形成在发光区域的外部时，进行频率调制，并且当至少在调制区域外部形成窗口区域时，进行相位调制。

3. 发明授权

US4743087A Optical external modulation semiconductor element 失效
标题翻译：光外部调制半导体元件
公开(公告)号：US4743087A
公开(公告)日：1988-05-10
申请号：US739477
申请日：1985-05-30
申请人： Katsuyuki Utaka , Shigeyuki Akiba , Yukitoshi Kushiro , Yukio Noda
发明人： Katsuyuki Utaka , Shigeyuki Akiba , Yukitoshi Kushiro , Yukio Noda
IPC分类号： G02B6/00 , G02B6/34 , G02F1/19 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/16 , H01S3/19
CPC分类号： H01S5/0265 , H01S5/12 , H01S5/16 , H01S5/164
摘要： An optical modulation element is disclosed in which a diffraction grating is formed along a waveguide for guiding unmodulated incident light and inclined to the direction of travel of the light, and a structure is provided for changing the refractive index of the waveguide portion where the diffraction grating is formed. the refractive index of the waveguide portion can be effected by voltage application, by current injection or by light irradiation.
摘要翻译：公开了一种光调制元件，其中衍射光栅沿着波导形成以引导未调制的入射光并且倾斜于光的行进方向，并且提供了用于改变波导部分的折射率的结构，其中衍射光栅形成了。波导部分的折射率可以通过电压施加，电流注入或光照射来实现。

4. 发明授权

US4682196A Multi-layered semi-conductor photodetector 失效
标题翻译：多层半导体光电探测器
公开(公告)号：US4682196A
公开(公告)日：1987-07-21
申请号：US806746
申请日：1985-12-09
申请人： Kazuo Sakai , Yuichi Matsushima , Shigeyuki Akiba , Katsuyuki Utaka
发明人： Kazuo Sakai , Yuichi Matsushima , Shigeyuki Akiba , Katsuyuki Utaka
IPC分类号： H01L29/205 , H01L31/0352 , H01L31/11 , H01L27/14 , H01L29/12
CPC分类号： H01L29/205 , H01L31/035281 , H01L31/11 , Y02E10/50
摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
摘要翻译：一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。

5. 发明授权

US4660934A Method for manufacturing diffraction grating 失效
$Method for manufacturing diffraction grating$
标题翻译：衍射光栅的制造方法
公开(公告)号：US4660934A
公开(公告)日：1987-04-28
申请号：US710984
申请日：1985-03-12
申请人： Shigeyuki Akiba , Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
发明人： Shigeyuki Akiba , Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
IPC分类号： G02B5/18 , G03F7/00 , G03F7/095
CPC分类号： G03F7/095 , G02B5/1857 , G03F7/001 , Y10S359/90
摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
摘要翻译：制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构（P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。

6. 发明授权

US4918496A Infrared emitting device with dislocation free layer 失效
标题翻译：具有无位错层的红外发射装置
公开(公告)号：US4918496A
公开(公告)日：1990-04-17
申请号：US213608
申请日：1988-06-30
申请人： Yuichi Matsushima , Kazuo Sakai , Shigeyuki Akiba , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Shigeyuki Akiba , Katsuyuki Utaka
IPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01S5/00 , H01S5/02 , H01S5/32 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34313 , H01S2302/00 , H01S5/0206 , H01S5/3201 , H01S5/3218 , H01S5/3403 , H01S5/3409 , H01S5/34306
摘要： An infrared emitting device for use in the 2 to 3 .mu.m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 .mu.m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate.
摘要翻译：一种用于2〜3μm区域的红外发射装置，其阈值电流低，在宽温度范围内工作。根据本发明，使用InP衬底代替用于2至3μm红外半导体激光器的GaSb衬底和InAs衬底。此外，作为有源层或覆层，采用与InP衬底的晶格常数不同的多个半导体层之一。

7. 发明授权

US5122844A Quantum well structure and semiconductor device using the same 失效
标题翻译：量子阱结构和使用相同的半导体器件
公开(公告)号：US5122844A
公开(公告)日：1992-06-16
申请号：US706542
申请日：1991-05-22
申请人： Shigeyuki Akiba , Masashi Usami , Yuichi Matsushima , Kazuo Sakai , Katsuyuki Utaka
发明人： Shigeyuki Akiba , Masashi Usami , Yuichi Matsushima , Kazuo Sakai , Katsuyuki Utaka
IPC分类号： H01L27/15 , H01L33/06 , H01L33/14 , H01L33/28 , H01L33/30 , H01S5/00 , H01S5/34
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01L33/26
摘要： A quantum well structure is disclosed, which is comprised of a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers of an energy gap greater than that of the quantum well layer. A second material of a lattice constant different from that of a first material primarily for the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device which employs such a quantum well structure and is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. In concrete terms, the present invention has its feature in allowing ease in the fabrication of an intermediate infrared or blue light emitting device, for instance.

8. 发明授权

US4897845A Semiconductor optical amplifying element 失效
标题翻译：半导体光放大元件
公开(公告)号：US4897845A
公开(公告)日：1990-01-30
申请号：US350088
申请日：1989-05-10
申请人： Katsuyuki Utaka , Yuichi Matsushima , Kazuo Sakai , Shigeyuki Akiba
发明人： Katsuyuki Utaka , Yuichi Matsushima , Kazuo Sakai , Shigeyuki Akiba
IPC分类号： G02F1/35 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/30 , H01L33/44 , H01L33/58 , H01S5/00 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/343 , H01S5/50
CPC分类号： B82Y20/00 , H01S5/2027 , H01S5/50 , H01S5/2203 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical amplifying element is disclosed which has a semiconductor multilayer structure including at least a first semiconductor layer for providing an optical gain in response to the injection of carriers thereinto, and a p-side electrode and an n-side electrode for the carrier injection. A first reflecting surface and a second reflecting surface are disposed thickwisely of the semiconductor multilayer structure and opposite to each other thereacross. The element is designed so that light incident thereon from the thickwise direction of the semiconductor multilayer structure is amplified by propagating through the element perpendicularly to the thickwise direction of the semiconductor multilayer structure while being multiple-reflected between the first reflecting surface and the second reflecting surface.

9. 发明授权

US4701930A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US4701930A
公开(公告)日：1987-10-20
申请号：US764217
申请日：1985-08-09
申请人： Shigeyuki Akiba , Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
发明人： Shigeyuki Akiba , Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
IPC分类号： H01S5/00 , H01S5/12 , H01S5/16 , H01S3/19
CPC分类号： H01S5/164 , H01S5/12 , H01S5/124 , H01S5/16
摘要： A distributed feedback semiconductor laser, in which the periodic corrugations in the first region and the second region of the light emitting region of the DFB laser have different lengths or depths to make the intensities of the Bragg reflection of the first region and the second region different from each other, thereby obtaining asymmetrical light outputs from the both sides of the DFB laser.
摘要翻译：分布式反馈半导体激光器，其中DFB激光器的发光区域的第一区域和第二区域中的周期性波纹具有不同的长度或深度，以使得第一区域和第二区域的布拉格反射的强度不同从而从DFB激光器的两侧获得不对称的光输出。

10. 发明授权

US4653059A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US4653059A
公开(公告)日：1987-03-24
申请号：US688566
申请日：1985-01-03
申请人： Shigeyuki Akiba , Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
发明人： Shigeyuki Akiba , Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
IPC分类号： H01S5/00 , H01S5/12 , H01S5/16 , H01S3/19
CPC分类号： H01S5/12 , H01S5/164
摘要： A distributed feedback semiconductor laser which has periodic corrugations formed in a light emitting layer or an adjoining layer to extend in the direction of travel of light. A window region formed by a semiconductor layer larger in energy gap than the light emitting layer is provided on the extension line of one end of a laser region formed in the light emitting layer. The length of the window region is so limited as to prevent substantial reflection of laser output light in the window region. The end face of the laser on the opposite side from the window region is coated with a film for increasing reflectivity.
摘要翻译：一种分布式反馈半导体激光器，其具有在发光层或相邻层中形成的周期性波纹，以在光的行进方向上延伸。由形成在发光层的激光区域的一端的延长线上设置由能隙比发光层大的半导体层形成的窗口区域。窗口区域的长度被限制以防止激光输出光在窗口区域中的实质反射。在与窗口区域相反的一侧上的激光器的端面涂覆有用于增加反射率的膜。

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