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1. 发明授权

US07655569B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07655569B2
公开(公告)日：2010-02-02
申请号：US12020761
申请日：2008-01-28
申请人： Yuichi Inaba , Yutaka Yamada , Shigehiro Morikawa
发明人： Yuichi Inaba , Yutaka Yamada , Shigehiro Morikawa
IPC分类号： H01L21/311
CPC分类号： H01L27/115 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： The invention prevents a wiring layer in a memory region from being exposed to prevent a change in wire resistance and degradation of reliability. A SiO2 film as an etching stopper film which transmits ultraviolet light is formed on pad electrodes and an interlayer insulation film. Then, the SiO2 film on the pad electrodes is etched selectively and the SiO2 film in an EPROM region is left. A silicon nitride film and a polyimide film are then formed on the SiO2 film and on the pad electrodes where the SiO2 film is removed, as a protection film which does not transmit ultraviolet light. The silicon nitride film and the polyimide film on the pad electrodes and in the EPROM region are then selectively removed by etching. Since the SiO2 film functions as an etching stopper at this time, the interlayer insulation film under the SiO2 film is prevented from being etched and a control gate line metal layer is prevented from being exposed.
摘要翻译：本发明防止存储区域中的布线层暴露，以防止电线电阻的变化和可靠性的劣化。在焊盘电极和层间绝缘膜上形成作为透射紫外光的蚀刻停止膜的SiO 2膜。然后，选择性地蚀刻焊盘电极上的SiO 2膜，并且留下EPROM区域中的SiO 2膜。然后在SiO 2膜上除去SiO 2膜的焊盘电极上形成氮化硅膜和聚酰亚胺膜作为不透射紫外线的保护膜。然后通过蚀刻选择性地去除焊盘电极和EPROM区域中的氮化硅膜和聚酰亚胺膜。由于SiO 2膜此时用作蚀刻阻挡层，因此可以防止SiO 2膜下的层间绝缘膜被蚀刻，防止控制栅线金属层露出。

2. 发明申请

US20090011603A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090011603A1
公开(公告)日：2009-01-08
申请号：US12020761
申请日：2008-01-28
申请人： Yuichi Inaba , Yutaka Yamada , Shigehiro Morikawa
发明人： Yuichi Inaba , Yutaka Yamada , Shigehiro Morikawa
IPC分类号： H01L21/311
CPC分类号： H01L27/115 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： The invention prevents a wiring layer in a memory region from being exposed to prevent a change in wire resistance and degradation of reliability. A SiO2 film as an etching stopper film which transmits ultraviolet light is formed on pad electrodes and an interlayer insulation film. Then, the SiO2 film on the pad electrodes is etched selectively and the SiO2 film in an EPROM region is left. A silicon nitride film and a polyimide film are then formed on the SiO2 film and on the pad electrodes where the SiO2 film is removed, as a protection film which does not transmit ultraviolet light. The silicon nitride film and the polyimide film on the pad electrodes and in the EPROM region are then selectively removed by etching. Since the SiO2 film functions as an etching stopper at this time, the interlayer insulation film under the SiO2 film is prevented from being etched and a control gate line metal layer is prevented from being exposed.
摘要翻译：本发明防止存储区域中的布线层暴露，以防止电线电阻的变化和可靠性的劣化。在焊盘电极和层间绝缘膜上形成作为透射紫外光的蚀刻停止膜的SiO 2膜。然后，选择性地蚀刻焊盘电极上的SiO 2膜，并且留下EPROM区域中的SiO 2膜。然后在SiO 2膜上除去SiO 2膜的焊盘电极上形成氮化硅膜和聚酰亚胺膜作为不透射紫外线的保护膜。然后通过蚀刻选择性地去除焊盘电极和EPROM区域中的氮化硅膜和聚酰亚胺膜。由于SiO 2膜此时用作蚀刻阻挡层，因此可以防止SiO 2膜下的层间绝缘膜被蚀刻，防止控制栅线金属层露出。

3. 发明授权

US07741724B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07741724B2
公开(公告)日：2010-06-22
申请号：US12060673
申请日：2008-04-01
申请人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
发明人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00
摘要： This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.
摘要翻译：本发明旨在提供一种具有能够缓和施加到接合垫的机械应力的结构的半导体器件。具有通孔的第三层间绝缘膜形成在第二层间绝缘膜上以覆盖第三布线层。在通孔中形成第三导电层。第三层间绝缘膜由多个六边形柱状层间绝缘膜的阵列构成。并且通孔和第三导电层形成为围绕每个六边形柱状层间绝缘膜。形成通过第三导电层与第三布线层连接的第四布线层。第四布线层在本发明的实施例中形成最上层的布线层，并且用作接合焊盘。

4. 发明申请

US20080237877A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080237877A1
公开(公告)日：2008-10-02
申请号：US12060673
申请日：2008-04-01
申请人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
发明人： Shigehiro Morikawa , Yuichi Inaba , Yuji Goto
IPC分类号： H01L23/538
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00
摘要： This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.
摘要翻译：本发明旨在提供一种具有能够缓和施加到接合垫的机械应力的结构的半导体器件。具有通孔的第三层间绝缘膜形成在第二层间绝缘膜上以覆盖第三布线层。在通孔中形成第三导电层。第三层间绝缘膜由多个六边形柱状层间绝缘膜的阵列构成。并且通孔和第三导电层形成为围绕每个六边形柱状层间绝缘膜。形成通过第三导电层与第三布线层连接的第四布线层。第四布线层在本发明的实施例中形成最上层的布线层，并且用作接合焊盘。

5. 发明申请

US20100285994A1 GOLD NANOPARTICLE COMPOSITION, DNA CHIP, NEAR INFRARED ABSORBENT, DRUG CARRIER FOR DRUG DELIVERY SYSTEM (DDS), COLORING AGENT, BIOSENSOR, COSMETIC, COMPOSITION FOR IN VIVO DIAGNOSIS AND COMPOSITION FOR THERAPEUTIC USE 审中-公开
标题翻译：金纳米颗粒组合物，DNA芯片，近红外吸收剂，药物递送系统（DDS）药物载体，染色剂，生物传感器，化妆品，用于体内诊断的组合物和用于治疗用途的组合物
公开(公告)号：US20100285994A1
公开(公告)日：2010-11-11
申请号：US12810764
申请日：2008-12-26
申请人： Chisaka Hosomi , Ikuo Tooyama , Toshiro Inubushi , Shigehiro Morikawa , Hiroshi Yamada
发明人： Chisaka Hosomi , Ikuo Tooyama , Toshiro Inubushi , Shigehiro Morikawa , Hiroshi Yamada
IPC分类号： C40B40/06 , C07F1/12
CPC分类号： A61K49/0017 , A61K8/025 , A61K8/19 , A61K8/70 , A61K9/5115 , A61K41/0052 , A61K47/02 , A61K49/0065 , A61K2800/413 , A61K2800/58 , A61K2800/612 , A61Q19/00 , B22F1/0059 , B22F9/24 , B82Y5/00
摘要： A gold nanoparticle composition is provided that includes a spherical gold nanoparticle and an organic ligand molecule. The organic ligand molecule bonds to the gold nanoparticle. Thus, the gold nanoparticle composition has at least one absorption peak wavelength (plasmon absorption wavelength) within the region of 600-1000 nm. Consequently, the gold nanoparticle composition self-heats when irradiated with electromagnetic waves having a wavelength of 600-1000 nm.
摘要翻译：提供了一种金纳米颗粒组合物，其包括球形金纳米颗粒和有机配体分子。有机配体分子与金纳米颗粒结合。因此，金纳米颗粒组合物在600-1000nm范围内具有至少一个吸收峰波长（等离子体激元吸收波长）。因此，当用具有600-1000nm波长的电磁波照射时，金纳米颗粒组合物自加热。

6. 发明授权

US07195626B2 Electrode device for microwave surgery 有权
标题翻译：微波手术用电极装置
公开(公告)号：US07195626B2
公开(公告)日：2007-03-27
申请号：US10516611
申请日：2003-06-02
申请人： Koichi Wakikaido , Yoshimasa Kurumi , Shigeyuki Naka , Shigehiro Morikawa
发明人： Koichi Wakikaido , Yoshimasa Kurumi , Shigeyuki Naka , Shigehiro Morikawa
IPC分类号： A61B18/18
CPC分类号： A61B18/18 , A61B18/1815 , A61B2090/3954
摘要： Disclosed is an electrode device for microwave surgery which is provided with a marker securely fixed to the central electrode, which marker can provide a magnetic susceptibility artifact of a uniform size and shape free of fluctuation among electrode devices. The electrode device comprise a central conductor body, a tubular insulator body which covers the central conductor body except its distal end, a tubular external electrode which covers the tubular insulator body except its distal end part, and a central electrode which covers the distal end part of the central conductor body. The central conductor body, the insulator body, the external electrode and the central electrode are made of a nonmagnetic material, and a cylindrical member made of a magnetic material is fit around the distal end part of the central conductor body. At least one projection is defined on the lateral face of the central conductor body at the distal side of the cylindrical member, and the cylindrical member engages with the projection in the distal direction.
摘要翻译：公开了一种用于微波手术的电极装置，其具有牢固地固定到中心电极的标记，该标记可以提供在电极装置之间没有波动的均匀尺寸和形状的磁化率伪影。所述电极装置包括：中心导体体，覆盖除了前端部之外的中心导体本体的管状绝缘子体;覆盖所述管状绝缘子体的除了前端部之外的管状外部电极;以及覆盖所述前端部的中央电极的中心导体。中心导体体，绝缘体，外部电极和中心电极由非磁性材料制成，并且由磁性材料制成的圆柱形构件安装在中心导体的远端部分周围。至少一个凸起限定在中心导体本体的圆柱形构件的远侧的侧面上，并且圆柱形构件在远端方向上与突起接合。

7. 发明申请

US20050149009A1 Microwave surgery electronic device 有权
标题翻译：微波手术电子设备
公开(公告)号：US20050149009A1
公开(公告)日：2005-07-07
申请号：US10516611
申请日：2003-06-02
申请人： Koichi Wakikaido , Yoshimasa Kurumi , Shigeyuki Naka , Shigehiro Morikawa
发明人： Koichi Wakikaido , Yoshimasa Kurumi , Shigeyuki Naka , Shigehiro Morikawa
IPC分类号： A61B18/18 , A61B19/00
CPC分类号： A61B18/18 , A61B18/1815 , A61B2090/3954
摘要： Disclosed is an electrode device for microwave surgery which is provided with a marker securely fixed to the central electrode, which marker can provide a magnetic susceptibility artifact of a uniform size and shape free of fluctuation among electrode devices. The electrode device comprise a central conductor body, a tubular insulator body which covers the central conductor body except its distal end, a tubular external electrode which covers the tubular insulator body except its distal end part, and a central electrode which covers the distal end part of the central conductor body. The central conductor body, the insulator body, the external electrode and the central electrode are made of a nonmagnetic material, and a cylindrical member made of a magnetic material is fit around the distal end part of the central conductor body. At least one projection is defined on the lateral face of the central conductor body at the distal side of the cylindrical member, and the cylindrical member engages with the projection in the distal direction.
摘要翻译：公开了一种用于微波手术的电极装置，其具有牢固地固定到中心电极的标记，该标记可以提供在电极装置之间没有波动的均匀尺寸和形状的磁化率伪影。所述电极装置包括：中心导体体，覆盖除了前端部之外的中心导体本体的管状绝缘子体;覆盖所述管状绝缘子体的除了前端部之外的管状外部电极;以及覆盖所述前端部的中央电极的中心导体。中心导体体，绝缘体，外部电极和中心电极由非磁性材料制成，并且由磁性材料制成的圆柱形构件安装在中心导体的远端部分周围。至少一个凸起限定在中心导体本体的圆柱形构件的远侧的侧面上，并且圆柱形构件在远端方向上与突起接合。

8. 发明授权

US08956589B2 Imaging diagnostic agent and extracorporeal diagnostic agent for incurable neurological diseases 有权
标题翻译：成像诊断剂和不可治愈神经系统疾病的体外诊断剂
公开(公告)号：US08956589B2
公开(公告)日：2015-02-17
申请号：US13203589
申请日：2010-02-26
申请人： Ikuo Tooyama , Hiroyasu Taguchi , Shigehiro Morikawa , Makoto Urushitani , Daijiro Yanagisawa , Tomone Nagae , Nobuaki Shirai , Koichi Hirao , Masanari Kato , Hirohiko Kimura , Takashi Okada
发明人： Ikuo Tooyama , Hiroyasu Taguchi , Shigehiro Morikawa , Makoto Urushitani , Daijiro Yanagisawa , Tomone Nagae , Nobuaki Shirai , Koichi Hirao , Masanari Kato , Hirohiko Kimura , Takashi Okada
IPC分类号： A61K49/06 , C07C69/738 , A61K31/12 , G01N33/68 , A61K49/10 , A61K51/04 , C07C49/255 , C07C59/70 , C07C59/90 , C07C225/22 , C07C235/78 , C07C255/40 , C07D213/50 , C07D307/46
CPC分类号： G01N33/6896 , A61K49/10 , A61K51/04 , C07C49/255 , C07C59/70 , C07C59/90 , C07C69/738 , C07C225/22 , C07C235/78 , C07C255/40 , C07D213/50 , C07D307/46 , G01N33/6839 , G01N2800/2821
摘要： Disclosed are a curcumin derivative or a salt thereof, which contains a fluorine atom, represented by formula (I): (wherein R1a and R1b are each independently a hydrogen atom, alkyl, acetyl, or methoxycarbonyl; R2s are each independently a fluorine atom, CHF2—, CF3—, CHF2O—, or CF3O—; R3s are each independently a hydrogen atom or a fluorine atom; A is alkyl, cyano, carboxyl, alkoxycarbonyl, or R4—(CH2)m—; R4 is hydroxy, carboxy, cyano, acetyloxy, alkoxycarbonyl, alkoxyalkoxy, hydroxyalkoxy, or CONR5R6; R5 and R6 are each independently a hydrogen atom or alkyl; and m is an integer from 1 to 5), and a diagnostic imaging agent for diagnosing a disease in which an amyloid β peptide aggregate accumulates, the diagnostic imaging agent containing a compound having a 1,3-dicarbonyl structure, wherein the compound exists in a keto form and an enol form, and the keto form and the enol form have different affinities, respectively, to the amyloid β peptide aggregate.
摘要翻译：公开了含有由式（I）表示的氟原子的姜黄素衍生物或其盐：其中R 1a和R 1b各自独立地为氢原子，烷基，乙酰基或甲氧基羰基; R 2各自独立地为氟原子， CH 2 - ，CF 3 - ，CHF 2 O-或CF 3 O-; R 3各自独立地为氢原子或氟原子; A为烷基，氰基，羧基，烷氧基羰基或R 4 - （CH 2）m - ; R 4为羟基，氰基，乙酰氧基，烷氧基羰基，烷氧基烷氧基，羟基烷氧基或CONR5R6; R5和R6各自独立地为氢原子或烷基; m为1至5的整数），以及用于诊断淀粉样蛋白和bgr的疾病的诊断显像剂 ; 肽聚集体积累，诊断成像剂含有具有1,3-二羰基结构的化合物，其中化合物以酮形式和烯醇形式存在，酮形式和烯醇形式分别具有与淀粉样蛋白不同的亲和力＆bgr 肽聚集体。

9. 发明授权

US5063281A Weaving welding method 失效
标题翻译：焊接方法
公开(公告)号：US5063281A
公开(公告)日：1991-11-05
申请号：US427102
申请日：1989-10-06
申请人： Toru Mizuno , Shigehiro Morikawa
发明人： Toru Mizuno , Shigehiro Morikawa
IPC分类号： B23K9/12 , B23K9/02 , G05B19/4093
CPC分类号： B23K9/0216
摘要： A weaving welding method is provided which permits an accurate and continuous weaving welding along various weld lines including a complicated weld line which is a combination of straight lines and arcs, based on a simple determination. In accordance with the previously predetermined start and end points of a first section of a desired weld line, the predetermined weaving width and the detected orientation of a welding torch, a weaving swing plane is determined which includes an intersection line at which a first plane traversing the desired weld line at right angles thereto intersects a second plane perpendicular to the axis of the welding torch, and is parallel to the desired weld line (S2). The torch is then moved along the desired weld line while moved in a weaving pattern with a predetermined weaving width in a direction traversing the desired weld line, such that the distal end thereof is moved on the weaving swing plane (S3). During the execution of these steps, the desired weld line is corrected in accordance with the detected value of the welding current, so as to be coincident with the center line of a groove of a workpiece (S 4). Then, the above process is carried out for the second section of the desired weld line.

10. 发明授权

US4857700A Control apparatus for automatic arc welding machine 失效
标题翻译：自动弧焊机控制装置
公开(公告)号：US4857700A
公开(公告)日：1989-08-15
申请号：US243564
申请日：1988-08-09
申请人： Kenichi Toyoda , Tohru Mizuno , Nobutoshi Torii , Yuichi Kanda , Shigehiro Morikawa
发明人： Kenichi Toyoda , Tohru Mizuno , Nobutoshi Torii , Yuichi Kanda , Shigehiro Morikawa
IPC分类号： B23K9/12 , B23K9/127
CPC分类号： B23K9/127
摘要： The arc current is divided into two areas each corresponding to a 1/4 period of weaving, the two areas are compared with each other, and an area corresponding to a predetermined time period at the end portion of the larger area is substrated from the larger area and another area comparison is performed. The movement of the welding torch is compensated in accordance with the predetermined correction function, so that, even when an actual weld line of base metals to be welded deviates from an instructed weld line, the welding torch is correctly moved along the weld line of the base materials and arc welding is performed.

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