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1. 发明授权

US08894889B1 Compound semiconductor precursor ink composition, method for forming a chalcogenide semiconductor film, and method for forming a photovoltaic device 有权
标题翻译：化合物半导体前体油墨组合物，形成硫族化物半导体膜的方法和形成光电器件的方法
公开(公告)号：US08894889B1
公开(公告)日：2014-11-25
申请号：US13890264
申请日：2013-05-09
申请人： Feng-Yu Yang , Ching Ting , Yueh-Chun Liao
发明人： Feng-Yu Yang , Ching Ting , Yueh-Chun Liao
IPC分类号： H01B1/02 , C09D11/52 , H01L21/02 , H01L31/18
CPC分类号： C09D11/52 , H01L21/02491 , H01L21/02557 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L31/0322 , H01L31/0326 , Y02E10/541
摘要： A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.
摘要翻译：化合物半导体前体油墨组合物包括用于形成硫族化物半导体膜的油墨组合物和与油墨组合物混合的过氧化物。形成硫族化物半导体膜的方法和形成光电器件的方法各自包括使用含有过氧化物化合物的化合物半导体前体油墨组合物形成硫族化物半导体膜。

2. 发明申请

US20140335649A1 Compound semiconductor precursor ink composition, method for forming a chalcogenide semiconductor film, and method for forming a photovoltaic device 有权
公开(公告)号：US20140335649A1
公开(公告)日：2014-11-13
申请号：US13890264
申请日：2013-05-09
申请人： Feng-Yu Yang , Ching Ting , Yueh-Chun Liao
发明人： Feng-Yu Yang , Ching Ting , Yueh-Chun Liao
IPC分类号： C09D11/00 , H01L31/18 , H01L21/02
CPC分类号： C09D11/52 , H01L21/02491 , H01L21/02557 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L31/0322 , H01L31/0326 , Y02E10/541
摘要： A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.

3. 发明授权

US08771555B2 Ink composition 有权
标题翻译：墨水组成
公开(公告)号：US08771555B2
公开(公告)日：2014-07-08
申请号：US13234158
申请日：2011-09-16
申请人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
发明人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
IPC分类号： H01B1/02
CPC分类号： C09D11/52 , H01L21/02491 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02628 , H01L31/0326 , Y02E10/50
摘要： An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
摘要翻译：公开了一种用于形成硫族化物半导体膜的油墨组合物及其形成方法。油墨组合物包括溶剂，多种金属硫族化物纳米颗粒和选自金属离子和金属络合离子的至少一种。金属离子和/或复合离子分布在金属硫族化物纳米颗粒的表面上，并适于将金属硫族化物纳米颗粒分散在溶剂中。金属硫族化物纳米颗粒，金属离子和金属络合离子的金属选自周期表第I族，第II族，第III族和第IV族元素组成的组，并包括硫族化物半导体材料的所有金属元素。

4. 发明申请

US20130074911A1 Photovoltaic Device Including a CZTS Absorber Layer and Method of Manufacturing the Same 审中-公开
标题翻译：包括CZTS吸收层的光伏器件及其制造方法
公开(公告)号：US20130074911A1
公开(公告)日：2013-03-28
申请号：US13241248
申请日：2011-09-23
申请人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
发明人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
IPC分类号： H01L31/0296 , H01L31/18
CPC分类号： H01L31/0326 , H01L31/072 , Y02E10/50
摘要： A photovoltaic device including a CZTS absorber layer and method for manufacturing the same are disclosed. The photovoltaic device includes a substrate, a bottom electrode, an absorber layer formed on the bottom electrode, a buffer layer formed on the absorber layer and a top electrode layer formed on the buffer layer. The absorber layer includes a first region adjacent to the bottom electrode and a second region adjacent to the first region. Both of the first region and the second region include a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0
摘要翻译：公开了一种包括CZTS吸收层的光电器件及其制造方法。光电器件包括基底，底部电极，形成在底部电极上的吸收层，形成在吸收层上的缓冲层和形成在缓冲层上的顶部电极层。吸收层包括与底部电极相邻的第一区域和与第一区域相邻的第二区域。第一区域和第二区域都包括Cua（Zn1-bSnb）（Se1-cSc）2的式，其中0

5. 发明申请

US20120282730A1 Ink composition, Chalcogenide Semiconductor Film, Photovoltaic Device and Methods for Forming the same 审中-公开
标题翻译：墨水组成，硫族化物半导体膜，光伏器件及其形成方法
公开(公告)号：US20120282730A1
公开(公告)日：2012-11-08
申请号：US13437935
申请日：2012-04-03
申请人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
发明人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
IPC分类号： H01L31/18 , H01B1/02 , H01L21/368 , B82Y40/00 , B82Y30/00
CPC分类号： C09D11/52 , H01L21/02568 , H01L21/02579 , H01L21/02601 , H01L21/02628 , H01L31/0326 , H01L31/072 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： An ink composition includes a solvent system, a plurality of metal chalcogenide nanoparticles, at least one of metal ions and metal complex ions and a sodium source. The at least one of the metal ions and the metal complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent system. The sodium source is dispersed in the solvent system and/or is included in at least one of the metal chalcogenide nanoparticle, the metal ions and the metal complex ions. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III, group IV elements of periodic table, and sodium and include all metal elements of a chalcogenide semiconductor material.
摘要翻译：油墨组合物包括溶剂体系，多种金属硫族化物纳米颗粒，金属离子和金属络合离子中的至少一种和钠源。金属离子和金属络合离子中的至少一种分布在金属硫族化物纳米颗粒的表面上，并适于将金属硫族化物纳米颗粒分散在溶剂体系中。钠源分散在溶剂体系中和/或包含在至少一种金属硫族化物纳米颗粒，金属离子和金属络合物离子中。金属硫族化物纳米颗粒，金属离子和金属络合离子的金属选自由元素周期表第I族，第II族，第III族，第IV族元素和钠组成的组，并且包括硫族化物半导体的所有金属元素材料。

6. 发明申请

US20120282721A1 Method for forming Chalcogenide Semiconductor Film and Photovoltaic Device 审中-公开
标题翻译：形成硫族化物半导体膜和光伏器件的方法
公开(公告)号：US20120282721A1
公开(公告)日：2012-11-08
申请号：US13234161
申请日：2011-09-16
申请人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
发明人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
IPC分类号： H01L31/18 , H01L21/20
CPC分类号： C09D11/52 , H01L31/0322 , H01L31/0324 , H01L31/0326 , H01L31/0749 , Y02E10/541
摘要： A method for forming a chalcogenide semiconductor film and a photovoltaic device using the chalcogenide semiconductor film are disclosed. The method includes steps of coating a precursor solution to form a layer on a substrate and annealing the layer to form the chalcogenide semiconductor film. The precursor solution includes a solvent, metal chalcogenide nanoparticles and at least one of metal ions and metal complex ions which are distributed on surfaces of the metal chalcogenide nanoparticles. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
摘要翻译：公开了一种硫族化物半导体膜的形成方法和使用该硫族化物半导体膜的光电器件。该方法包括以下步骤：涂覆前体溶液以在基底上形成层并退火该层以形成硫族化物半导体膜。前体溶液包括溶剂，金属硫族化物纳米颗粒和分布在金属硫族化物纳米颗粒的表面上的金属离子和金属络合物离子中的至少一种。金属硫族化物纳米颗粒，金属离子和金属络合离子的金属选自周期表第I族，第II族，第III族和第IV族元素组成的组，并包括硫族化物半导体材料的所有金属元素。

7. 发明申请

US20120279420A1 Ink composition and Method for Forming the Ink 有权
标题翻译：墨水组合物和形成墨水的方法
公开(公告)号：US20120279420A1
公开(公告)日：2012-11-08
申请号：US13234158
申请日：2011-09-16
申请人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
发明人： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
IPC分类号： C09D11/00 , B82Y30/00
CPC分类号： C09D11/52 , H01L21/02491 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02628 , H01L31/0326 , Y02E10/50
摘要： An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
摘要翻译：公开了一种用于形成硫族化物半导体膜的油墨组合物及其形成方法。油墨组合物包括溶剂，多种金属硫族化物纳米颗粒和选自金属离子和金属络合离子的至少一种。金属离子和/或复合离子分布在金属硫族化物纳米颗粒的表面上，并适于将金属硫族化物纳米颗粒分散在溶剂中。金属硫族化物纳米颗粒，金属离子和金属络合离子的金属选自周期表第I族，第II族，第III族和第IV族元素组成的组，并包括硫族化物半导体材料的所有金属元素。

8. 发明申请

US20130327377A1 Thin Film Chalcogenide Photovoltaic Device and Method for Forming the Same 审中-公开
标题翻译：薄膜硫族化物光伏器件及其形成方法
公开(公告)号：US20130327377A1
公开(公告)日：2013-12-12
申请号：US13490440
申请日：2012-06-06
申请人： Ching Ting , Feng-Yu Yang
发明人： Ching Ting , Feng-Yu Yang
IPC分类号： H01L51/44 , H01L51/48 , B82Y15/00 , B82Y40/00
CPC分类号： H01L51/4246 , B82Y10/00 , B82Y30/00 , H01L51/0047 , Y02E10/549
摘要： A thin film chalcogenide photovoltaic device and method for forming the same are disclosed. The thin film chalcogenide photovoltaic device includes a first electrode, a second electrode and an active layer disposed between the first electrode and the second electrode, wherein the active layer includes a p-type chalcogenide semiconductor layer, an n-type inorganic semiconductor layer, and an n-type carbon-containing material layer formed between the p-type chalcogenide semiconductor layer and the n-type inorganic semiconductor layer.
摘要翻译：公开了一种薄膜硫族化物光电器件及其形成方法。薄膜硫族化物光伏器件包括第一电极，第二电极和设置在第一电极和第二电极之间的有源层，其中有源层包括p型硫族化物半导体层，n型无机半导体层和形成在p型硫族化物半导体层和n型无机半导体层之间的n型含碳材料层。

9. 发明授权

US08028643B2 All-directional fall sensor 有权
标题翻译：全方位跌落传感器
公开(公告)号：US08028643B2
公开(公告)日：2011-10-04
申请号：US12385323
申请日：2009-04-06
申请人： Sheau-Shi Pan , Feng-Yu Yang , Fu-Lung Pan
发明人： Sheau-Shi Pan , Feng-Yu Yang , Fu-Lung Pan
IPC分类号： G01L5/00
CPC分类号： G01P15/04 , G01P15/06
摘要： The all-directional fall sensor of the present invention includes a first casing defining a first interior space filled with a liquid and a floater buoyed by the liquid inside the first casing. The floater includes an indicator having indicative materials therein. The indicator includes a body defining a chamber, which is divided into at least a first portion and a second portion with a first sealing member located therebetween. The indicative materials are contained in the second portion of the chamber and are sealed therein with the first sealing member. When the all-directional fall sensor is applied with a force, the first sealing member would be dislocated and thus the indicative materials are dispersed within the chamber.
摘要翻译：本发明的全方位跌落传感器包括限定充满液体的第一内部空间的第一壳体和由第一壳体内部的液体浮起的浮子。浮子包括其中具有指示材料的指示器。指示器包括限定腔室的主体，其被分成至少第一部分和第二部分，其间位于其间的第一密封构件。指示材料包含在腔室的第二部分中，并用第一密封构件密封在其中。当全方向下落传感器施加力时，第一密封构件将脱位，因此指示材料分散在腔室内。

10. 发明申请

US20080121871A1 MONONUCLEAR STAR-BRANCHED POLYMER DIELECTRIC MATERIAL AND ORGANIC THIN FILM TRANSISTOR 有权
标题翻译：单星星分支聚合物电介质材料和有机薄膜晶体管
公开(公告)号：US20080121871A1
公开(公告)日：2008-05-29
申请号：US11672523
申请日：2007-02-08
申请人： Feng-Yu Yang , Mee-Yu Hsu , Shu-Hua Chan , Yu-Rung Peng , Yu-Shen Mai , Wei-Yang Chou
发明人： Feng-Yu Yang , Mee-Yu Hsu , Shu-Hua Chan , Yu-Rung Peng , Yu-Shen Mai , Wei-Yang Chou
IPC分类号： H01L51/05 , C08G63/00 , H01L51/30
CPC分类号： H01L51/052 , C08F8/12 , C08F12/22 , C08F2438/01 , C08G83/005 , H01L51/0545
摘要： A mononuclear star-branched polymer dielectric material having a repeat unit of the formula (I): A-Bn (I) wherein, A represents a multifunctional center having a functionality and a functional group with “n” arms; n is an integer greater than 2. B represents a hydrolyzed or partially hydrolyzed compound of the formula (II): wherein, X represents H or CH3; R represents H, alkyl or is selected from a group consisting of acetoxyl, t-butyl, t-butyldimethyl silyl, acid labile groups and acid stable groups; “a” is an integer from 1 to 5; y and z are molar ratio and are the numbers satisfying y+z=1, 0
摘要翻译：具有式（I）的重复单元的单核星形支链聚合物电介质材料：<？in-line-formula description =“In-line Formulas”end =“lead”？> AB （I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中，A表示具有功能性的多功能中心和具有“n”个臂的官能团; n是大于2的整数.B代表式（II）的水解或部分水解的化合物：其中X表示H或CH 3。 R代表H，烷基或选自乙酰氧基，叔丁基，叔丁基二甲基甲硅烷基，酸不稳定基团和酸稳定基团; “a”是从1到5的整数; y和z是摩尔比，并且是满足y + z = 1,0,0

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