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    • 4. 发明申请
    • TRANSISTOR
    • 晶体管
    • US20110115034A1
    • 2011-05-19
    • US12732187
    • 2010-03-26
    • Po-Yuan LoYu-Rung PengTarng-Shiang HuYi-Jen Chan
    • Po-Yuan LoYu-Rung PengTarng-Shiang HuYi-Jen Chan
    • H01L29/792
    • H01L51/0533H01L29/4908
    • A transistor including a substrate, a gate, a semiconductor layer, a stacked insulating layer and a source and a drain is provided. The gate is disposed on the substrate. The semiconductor layer is disposed on the substrate, and a first type carrier is the main carrier in the semiconductor layer. The stacked insulating layer is disposed between the semiconductor layer and the gate, and includes a first insulating layer and a second insulating layer. The first insulating layer contains a first group withdrawing the first type carrier, the second insulating layer contains a second group withdrawing a second type carrier, and the first insulating layer is disposed between the semiconductor layer and the second insulating layer. The source and the drain are disposed on the substrate and at two sides of the semiconductor layer.
    • 提供了包括基板,栅极,半导体层,堆叠绝缘层以及源极和漏极的晶体管。 栅极设置在基板上。 半导体层设置在基板上,第一类型载体是半导体层中的主载流子。 堆叠的绝缘层设置在半导体层和栅极之间,并且包括第一绝缘层和第二绝缘层。 第一绝缘层包含第一组,第一组退出第一类型载体,第二绝缘层包含第二组,第二组退出第二类型载体,第一绝缘层设置在半导体层和第二绝缘层之间。 源极和漏极设置在衬底上并在半导体层的两侧。