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1. 发明申请

US20120173585A1 OBTAINING HIERARCHICAL INFORMATION OF PLANAR DATA 有权
标题翻译：获取平面数据的分层信息
公开(公告)号：US20120173585A1
公开(公告)日：2012-07-05
申请号：US13332361
申请日：2011-12-20
申请人： Yue Pan , Xing Zhi Sun , Ying Tao , Lin Hao Xu
发明人： Yue Pan , Xing Zhi Sun , Ying Tao , Lin Hao Xu
IPC分类号： G06F17/30
CPC分类号： G06F17/30592 , G06F19/00 , G06Q50/24
摘要： The invention provides a method and apparatus for obtaining hierarchical information of planar data. The method comprises mapping at least one data item from a same data set in the planar data to at least one node in a tree structure formed by a structured terminology system. The method also comprises obtaining at least one sub tree structure in the tree structure, each of the at least one sub tree structure taking the at least one node as all of its leaf node. The method also comprises selecting a target tree structure from the at least one sub tree structure and obtaining hierarchical information in the target tree structure. An apparatus corresponding to the above method is also provided. With the above method and apparatus, hierarchical information of data items may be obtained from planar organized data to facilitate subsequent and further analysis and management.
摘要翻译：本发明提供了一种获取平面数据分层信息的方法和装置。该方法包括将平面数据中的相同数据集中的至少一个数据项映射到由结构化术语系统形成的树结构中的至少一个节点。所述方法还包括获得所述树结构中的至少一个子树结构，所述至少一个子树结构中的每一个将所述至少一个节点作为其所有叶节点。该方法还包括从至少一个子树结构中选择目标树结构并获得目标树结构中的分层信息。还提供了与上述方法对应的装置。利用上述方法和装置，可以从平面有组织的数据获得数据项的分层信息，以便于后续和进一步的分析和管理。

2. 发明授权

US08996581B2 Obtaining hierarchical information of planar data 有权
标题翻译：获取平面数据的分层信息
公开(公告)号：US08996581B2
公开(公告)日：2015-03-31
申请号：US13332361
申请日：2011-12-20
申请人： Yue Pan , Xing Zhi Sun , Ying Tao , Lin Hao Xu
发明人： Yue Pan , Xing Zhi Sun , Ying Tao , Lin Hao Xu
IPC分类号： G06F7/00 , G06F17/30 , G06Q50/24
CPC分类号： G06F17/30592 , G06F19/00 , G06Q50/24
摘要： The invention provides a method and apparatus for obtaining hierarchical information of planar data. The method comprises mapping at least one data item from a same data set in the planar data to at least one node in a tree structure formed by a structured terminology system. The method also comprises obtaining at least one sub tree structure in the tree structure, each of the at least one sub tree structure taking the at least one node as all of its leaf node. The method also comprises selecting a target tree structure from the at least one sub tree structure and obtaining hierarchical information in the target tree structure. An apparatus corresponding to the above method is also provided. With the above method and apparatus, hierarchical information of data items may be obtained from planar organized data to facilitate subsequent and further analysis and management.
摘要翻译：本发明提供了一种获取平面数据分层信息的方法和装置。该方法包括将平面数据中的相同数据集中的至少一个数据项映射到由结构化术语系统形成的树结构中的至少一个节点。所述方法还包括获得所述树结构中的至少一个子树结构，所述至少一个子树结构中的每一个将所述至少一个节点作为其所有叶节点。该方法还包括从至少一个子树结构中选择目标树结构并获得目标树结构中的分层信息。还提供了与上述方法对应的装置。利用上述方法和装置，可以从平面有组织的数据获得数据项的分层信息，以便于后续和进一步的分析和管理。

3. 发明授权

US07125450B2 Process for preparing single crystal silicon using crucible rotation to control temperature gradient 有权
标题翻译：使用坩埚旋转制备单晶硅以控制温度梯度的方法
公开(公告)号：US07125450B2
公开(公告)日：2006-10-24
申请号：US10699038
申请日：2003-10-31
申请人： Zheng Lu , Steven L. Kimbel , Ying Tao
发明人： Zheng Lu , Steven L. Kimbel , Ying Tao
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , C30B15/30 , Y10T117/1072 , Y10T117/1076
摘要： The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e., G0(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein.
摘要翻译：本发明涉及一种用于制备锭或晶片形式的单晶硅的方法，其中坩埚旋转用于控制晶体中的平均轴向温度梯度，作为半径（即，G <0>（r）），特别是在中心轴处或附近。此外，利用坩埚旋转调制来获得其中的轴向均匀的氧含量。

4. 发明授权

US06663709B2 Crystal puller and method for growing monocrystalline silicon ingots 有权
公开(公告)号：US06663709B2
公开(公告)日：2003-12-16
申请号：US09892002
申请日：2001-06-26
申请人： Zheng Lu , Mohsen Banan , Ying Tao , Lee Ferry , Carl F. Cherko
发明人： Zheng Lu , Mohsen Banan , Ying Tao , Lee Ferry , Carl F. Cherko
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10T117/10 , Y10T117/1016 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072
摘要： A crystal puller and method for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. In one embodiment, the first heater is powered when the ingot is pulled upward to a first axial position above the surface of the molten silicon and the second heater is powered when the ingot is pulled upward to a second axial position above the first axial position. In another embodiment the first and second heaters are powered until the ingot is separated from the molten silicon and then the heating power output of the first and second heaters is reduced to substantially increase the cooling rate at which the ingot is cooled. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

5. 发明授权

US06554898B2 Crystal puller for growing monocrystalline silicon ingots 有权
标题翻译：用于生长单晶硅锭的晶体拉拔器
公开(公告)号：US06554898B2
公开(公告)日：2003-04-29
申请号：US10254945
申请日：2002-09-25
申请人： Zheng Lu , Mohsen Banan , Ying Tao , Lee Ferry , Carl F. Cherko
发明人： Zheng Lu , Mohsen Banan , Ying Tao , Lee Ferry , Carl F. Cherko
IPC分类号： C30B3500
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10T117/10 , Y10T117/1016 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072
摘要： A crystal puller for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.
摘要翻译：用于生长的单晶硅锭的晶体拉拔器包括晶体拉拔器中的第一和第二电阻加热器，当晶锭在壳体内向上拉动时，它们彼此以纵向，紧密间隔的关系朝向锭辐射热量。还可以提供安装加热器的适配器，以适应现有的结晶器以并入加热器。

6. 发明授权

US5650008A Method for preparing homogeneous bridgman-type single crystals 失效
标题翻译：制备均匀桥状单晶的方法
公开(公告)号：US5650008A
公开(公告)日：1997-07-22
申请号：US564680
申请日：1995-12-01
申请人： Sindo Kou , Ying Tao
发明人： Sindo Kou , Ying Tao
IPC分类号： C30B11/00 , C30B11/04
CPC分类号： C30B29/10 , C30B11/04 , C30B29/40 , Y10T117/10 , Y10T117/1024
摘要： Growth of homogeneous single crystals is carried out by a modified Bridgman-type process using a second melt of a different composition to replenish the first melt of a predetermined composition held in the crystal growth container. By controlling the replenishing rate and suppressing diffusion between the two melts, composition variations in the first melt and hence the growing crystal are compensated. The second melt may be maintained at a predetermined higher temperature than the first melt. The first melt may be agitated during crystal growth by rotation. A liquid encapsulant may be used.
摘要翻译：均匀单晶的生长通过使用不同组成的第二熔体的改进的Bridgman型方法进行，以补充保持在晶体生长容器中的预定组合物的第一熔体。通过控制补充速率并抑制两种熔体之间的扩散，补偿第一熔体中的组成变化并因此补偿生长晶体。第二熔体可以保持在比第一熔体预定的更高的温度。可以通过旋转在晶体生长期间搅拌第一熔体。可以使用液体密封剂。

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