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1. 发明授权

US06702930B1 Method and means for enhancing utilization of sputtering targets 失效
标题翻译：提高溅射靶的利用率的方法和手段
公开(公告)号：US06702930B1
公开(公告)日：2004-03-09
申请号：US10431472
申请日：2003-05-08
申请人： Yuanda Randy Cheng , Dennis Brown , Jianzhong Shi , Wee Ching Freddy Goh , Wah Meng John Soh , Steven Hiroshi Sawasaki
发明人： Yuanda Randy Cheng , Dennis Brown , Jianzhong Shi , Wee Ching Freddy Goh , Wah Meng John Soh , Steven Hiroshi Sawasaki
IPC分类号： C23C1435
CPC分类号： H01J37/3482 , C23C14/3407 , C23C14/35 , G11B5/851 , G11B7/266 , G11B11/10582
摘要： A method of sputtering a target, comprising steps of: (a) providing a magnetically enhanced sputtering apparatus comprising a sputtering target having a first, sputtering surface and a second, opposing surface in electrical contact with a cathode electrode of the sputtering apparatus; (b) sputtering the first surface of the target to form a first erosion track therein; (c) removing the target from the sputtering apparatus when the first erosion track reaches a predetermined depth below the first surface; (d) reinstalling the sputtering target in the sputtering apparatus such that the second surface is the sputtering surface and the first surface is the opposing surface and is in electrical contact with the cathode via an intervening backing plate comprised of at least one material selected for causing a second erosion track to be formed in the second surface of the target during sputtering therefrom which is laterally displaced from the first erosion track; and (e) sputtering the second surface of the target to form the laterally displaced second erosion track therein to a predetermined depth below the second surface, thereby increasing the utilization of the sputtering target.
摘要翻译：一种溅射靶的方法，包括以下步骤：（a）提供一种磁增强溅射装置，其包括具有与溅射装置的阴极电接触的第一溅射表面和第二相对表面的溅射靶;（b ）溅射靶的第一表面以在其中形成第一侵蚀轨迹;（c）当第一侵蚀轨道到达第一表面下方的预定深度时，从溅射装置移除靶;（d）在溅射中重新安装溅射靶装置，使得第二表面是溅射表面，并且第一表面是相对的表面，并且通过中间衬垫与阴极电接触，所述中间衬板包括至少一种材料，所述至少一种材料被选择用于在第二表面形成第二侵蚀轨道在溅射过程中靶的表面从第一侵蚀轨迹横向移位; 和（e）溅射靶的第二表面以在其中形成横向移位的第二侵蚀轨道到第二表面下方的预定深度，从而增加溅射靶的利用率。

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