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1. 发明申请

US20090197113A1 Interconnect structure and method of fabricating the same 有权
标题翻译：互连结构及其制造方法
公开(公告)号：US20090197113A1
公开(公告)日：2009-08-06
申请号：US12229233
申请日：2008-08-20
申请人： Yu-Tsung Wu , Jen-Hong Huang , Chung-Min Tsai , Huan-Chieh Su , Tri-Rung Yew
发明人： Yu-Tsung Wu , Jen-Hong Huang , Chung-Min Tsai , Huan-Chieh Su , Tri-Rung Yew
IPC分类号： H01L21/70
CPC分类号： H01L21/76823 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10T428/12625 , Y10T428/24851 , H01L2924/00
摘要： A method of fabricating an interconnect structure is described. A substrate is provided. A patterned interfacial metallic layer is formed on the substrate. An amorphous carbon insulating layer or a carbon-based insulating layer is formed covering the substrate and the interfacial metallic layer. A conductive carbon line or plug is formed in the amorphous carbon or carbon-based insulating layer electrically connected with the interfacial metallic layer. An interconnect structure is also described, including a substrate, a patterned interfacial metallic layer on the substrate, an amorphous carbon insulating layer or a carbon-based insulating layer on the substrate, and a conductive carbon line or plug disposed in the amorphous carbon or carbon-based insulating layer and electrically connected with the interfacial metallic layer.
摘要翻译：描述制造互连结构的方法。提供基板。在基板上形成有图案的界面金属层。形成覆盖基板和界面金属层的无定形碳绝缘层或碳基绝缘层。在与界面金属层电连接的无定形碳或碳基绝缘层中形成导电碳线或插塞。还描述了一种互连结构，包括衬底，衬底上的图案化界面金属层，衬底上的无定形碳绝缘层或碳基绝缘层，以及设置在无定形碳或碳中的导电碳线或插塞的绝缘层，并与界面金属层电连接。

2. 发明授权

US07858147B2 Interconnect structure and method of fabricating the same 有权
标题翻译：互连结构及其制造方法
公开(公告)号：US07858147B2
公开(公告)日：2010-12-28
申请号：US12229233
申请日：2008-08-20
申请人： Yu-Tsung Wu , Jen-Hong Huang , Chung-Min Tsai , Huan-Chieh Su , Tri-Rung Yew
发明人： Yu-Tsung Wu , Jen-Hong Huang , Chung-Min Tsai , Huan-Chieh Su , Tri-Rung Yew
IPC分类号： B05D5/12 , C23C16/00 , B05D3/00 , C23C14/00
CPC分类号： H01L21/76823 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10T428/12625 , Y10T428/24851 , H01L2924/00
摘要： A method of fabricating an interconnect structure is described. A substrate is provided. A patterned interfacial metallic layer is formed on the substrate. An amorphous carbon insulating layer or a carbon-based insulating layer is formed covering the substrate and the interfacial metallic layer. A conductive carbon line or plug is formed in the amorphous carbon or carbon-based insulating layer electrically connected with the interfacial metallic layer. An interconnect structure is also described, including a substrate, a patterned interfacial metallic layer on the substrate, an amorphous carbon insulating layer or a carbon-based insulating layer on the substrate, and a conductive carbon line or plug disposed in the amorphous carbon or carbon-based insulating layer and electrically connected with the interfacial metallic layer.
摘要翻译：描述制造互连结构的方法。提供基板。在基板上形成有图案的界面金属层。形成覆盖基板和界面金属层的无定形碳绝缘层或碳基绝缘层。在与界面金属层电连接的无定形碳或碳基绝缘层中形成导电碳线或插塞。还描述了一种互连结构，包括衬底，衬底上的图案化界面金属层，衬底上的无定形碳绝缘层或碳基绝缘层，以及设置在无定形碳或碳中的导电碳线或插塞的绝缘层，并与界面金属层电连接。

3. 发明申请

US20130307520A1 MICROELECTRODE ARRAY AND METHOD FOR MODIFYING CARBON NANOTUBE ELECTRODE INTERFACE OF THE SAME ARRAY 有权
标题翻译：微电极阵列和修改同一阵列碳纳米管电极接口的方法
公开(公告)号：US20130307520A1
公开(公告)日：2013-11-21
申请号：US12638429
申请日：2009-12-15
申请人： Shiang-Jie YEN , Huan-Chieh Su , Tri-Rung Yew , Yen-Chung Chang , Wei-Lun Hsu , Shih-Rung Yeh
发明人： Shiang-Jie YEN , Huan-Chieh Su , Tri-Rung Yew , Yen-Chung Chang , Wei-Lun Hsu , Shih-Rung Yeh
IPC分类号： C01B31/02 , A61N1/05
CPC分类号： C01B31/0273 , A61N1/0502 , A61N1/0551 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C01B32/174
摘要： The present invention discloses a method for modifying a carbon nanotube electrode interface, which modifies carbon nanotubes used as a neuron-electrode interface by performing three stages of modifications and comprises the steps of: carboxylating carbon nanotubes to provide carboxyl functional groups and improve the hydrophilicity of the carbon nanotubes; acyl-chlorinating the carboxylated carbon nanotubes to replace the hydroxyl functional groups of the carboxyl functional groups with chlorine atoms; and aminating the acyl-chlorinated carbon nanotubes to replace the chlorine atoms with a derivative having amine functional groups at the terminal thereof. The modified carbon nanotubes used as the neuron-electrode interface has lower impedance and higher adherence to nerve cells. Thus is improved the quality of neural signal measurement. The present invention also discloses a microelectrode array, wherein the neuron-electrode interface uses carbon nanotubes modified according to the method of the present invention.
摘要翻译：本发明公开了一种修饰碳纳米管电极界面的方法，其通过进行三个阶段的修饰来改变用作神经元 - 电极界面的碳纳米管，并且包括以下步骤：使碳纳米管羧化以提供羧基官能团并提高其亲水性碳纳米管; 酰化氯化羧化碳纳米管以用氯原子代替羧基官能团的羟基官能团; 并将酰基氯化碳纳米管胺化以在其末端具有胺官能团的衍生物代替氯原子。用作神经元 - 电极界面的改性碳纳米管具有较低的阻抗和较高的对神经细胞的依从性。因此提高了神经信号测量的质量。本发明还公开了一种微电极阵列，其中神经电极界面使用根据本发明的方法改性的碳纳米管。

4. 发明授权

US08593052B1 Microelectrode array and method for modifying carbon nanotube electrode interface of the same array 有权
标题翻译：微电极阵列和相同阵列碳纳米管电极界面的修饰方法
公开(公告)号：US08593052B1
公开(公告)日：2013-11-26
申请号：US12638429
申请日：2009-12-15
申请人： Shiang-Jie Yen , Huan-Chieh Su , Tri-Rung Yew , Yen-Chung Chang , Wei-Lun Hsu , Shih-Rung Yeh
发明人： Shiang-Jie Yen , Huan-Chieh Su , Tri-Rung Yew , Yen-Chung Chang , Wei-Lun Hsu , Shih-Rung Yeh
IPC分类号： H01J1/63 , H01J63/04 , H01J17/49
CPC分类号： C01B31/0273 , A61N1/0502 , A61N1/0551 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C01B32/174
摘要： The present invention discloses a method for modifying a carbon nanotube electrode interface, which modifies carbon nanotubes used as a neuron-electrode interface by performing three stages of modifications and comprises the steps of: carboxylating carbon nanotubes to provide carboxyl functional groups and improve the hydrophilicity of the carbon nanotubes; acyl-chlorinating the carboxylated carbon nanotubes to replace the hydroxyl functional groups of the carboxyl functional groups with chlorine atoms; and aminating the acyl-chlorinated carbon nanotubes to replace the chlorine atoms with a derivative having amine functional groups at the terminal thereof. The modified carbon nanotubes used as the neuron-electrode interface has lower impedance and higher adherence to nerve cells. Thus is improved the quality of neural signal measurement. The present invention also discloses a microelectrode array, wherein the neuron-electrode interface uses carbon nanotubes modified according to the method of the present invention.
摘要翻译：本发明公开了一种修饰碳纳米管电极界面的方法，其通过进行三个阶段的修饰来改变用作神经元 - 电极界面的碳纳米管，并且包括以下步骤：使碳纳米管羧化以提供羧基官能团并提高其亲水性碳纳米管; 酰化氯化羧化碳纳米管以用氯原子代替羧基官能团的羟基官能团; 并将酰基氯化碳纳米管胺化以在其末端具有胺官能团的衍生物代替氯原子。用作神经元 - 电极界面的改性碳纳米管具有较低的阻抗和较高的对神经细胞的依从性。因此提高了神经信号测量的质量。本发明还公开了一种微电极阵列，其中神经电极界面使用根据本发明的方法改性的碳纳米管。

5. 发明申请

US20080140195A1 MULTIFUNCTIONAL NANO-PROBE INTERFACE STRUCTURE FOR NEURAL PROSTHESES AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：用于神经遗传的多功能纳米探针接口结构及其制造方法
公开(公告)号：US20080140195A1
公开(公告)日：2008-06-12
申请号：US11775878
申请日：2007-07-11
申请人： Huan-Chieh Su , Hsieh Chen , Hsin Chen , Yen-Chung Chang , Shih-Rung Yeh , Weileun Fang , Chien-Chung Fu , Shiang-Cheng Lu , Tri-Rung Yew
发明人： Huan-Chieh Su , Hsieh Chen , Hsin Chen , Yen-Chung Chang , Shih-Rung Yeh , Weileun Fang , Chien-Chung Fu , Shiang-Cheng Lu , Tri-Rung Yew
IPC分类号： A61F2/02
CPC分类号： A61N1/05 , A61B5/04001 , A61B2562/0285 , A61N1/0536 , A61N1/0551
摘要： A novel multifunctional nano-probe interface is proposed for applications in neural stimulation and detecting. The nano-probe interface structure consists of a carbon nanotube coated with a thin isolation layer, a micro-electrode substrate array, and a controller IC for neural cell recording and stimulation. The micro-electrode substrate array contains wires connecting the carbon nanotube with the controller IC, as well as microfluidic channels for supplying neural tissues with essential nutrition and medicine. The carbon nanotube is disposed on the micro-electrode substrate array made by silicon, coated with a thin isolation layer around thereof, and employed as a nano-probe for neural recording and stimulation.
摘要翻译：提出了一种新颖的多功能纳米探针接口，用于神经刺激和检测。纳米探针界面结构由涂覆有薄隔离层的碳纳米管，微电极基板阵列和用于神经细胞记录和刺激的控制器IC组成。微电极基板阵列包含连接碳纳米管与控制器IC的电线，以及用于向神经组织提供必需营养和药物的微流体通道。碳纳米管设置在由硅制成的微电极基板阵列上，在其周围涂覆有薄的隔离层，并用作用于神经记录和刺激的纳米探针。

6. 发明申请

US20120118386A1 P-TYPE TRANSPARENT CONDUCTIVE OXIDES AND SOLAR CELLS WITH P-TYPE TRANSPARENT CONDUCTIVE OXIDES 有权
标题翻译： P型透明导电氧化物和具有P型透明导电氧化物的太阳能电池
公开(公告)号：US20120118386A1
公开(公告)日：2012-05-17
申请号：US13104744
申请日：2011-05-10
申请人： Han-Yi CHEN , Chia-Hsiang Chen , Huan-Chieh Su , Kuo-Liang Liu , Tri-Rung Yew
发明人： Han-Yi CHEN , Chia-Hsiang Chen , Huan-Chieh Su , Kuo-Liang Liu , Tri-Rung Yew
IPC分类号： H01L31/02 , H01B1/08 , B82Y99/00
CPC分类号： H01B1/08 , B82Y30/00 , C01G39/02 , C01P2002/54 , C01P2004/16 , C01P2004/17 , C01P2006/40 , H01G9/2031 , H01G9/2059 , H01L31/022466 , H01L31/035227 , H01L31/03529 , H01L31/072 , H01L31/1884 , H01L51/442 , Y02E10/50
摘要： A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.
摘要翻译： p型透明导电氧化物和含有p型透明导电氧化物的太阳能电池，其中p型透明导电氧化物包括掺杂有少于6价电子的元素的三氧化钼，该元素选自由碱金属，碱土金属，III族元素，IV族，V族，过渡元素及其组合组成。掺杂具有小于6价电子的元素导致孔数增加，从而增加空穴漂移速度，并使费米能级更接近p型材料的范围。因此，产生p型透明导电材料。该p型透明导电氧化物不仅具有高的电子空穴漂移速度，低电阻率，而且在可见光波长范围内也达到88％的透射率，因此非常适用于太阳能电池。

7. 发明授权

US08609981B2 P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indium 有权
标题翻译：用于太阳能电池的P型透明导电氧化物，其包含掺杂有铟的三氧化钼
公开(公告)号：US08609981B2
公开(公告)日：2013-12-17
申请号：US13104744
申请日：2011-05-10
申请人： Han-Yi Chen , Chia-Hsiang Chen , Huan-Chieh Su , Kuo-Liang Liu , Tri-Rung Yew
发明人： Han-Yi Chen , Chia-Hsiang Chen , Huan-Chieh Su , Kuo-Liang Liu , Tri-Rung Yew
IPC分类号： H01L31/00 , H01B1/02 , H01B1/08
CPC分类号： H01B1/08 , B82Y30/00 , C01G39/02 , C01P2002/54 , C01P2004/16 , C01P2004/17 , C01P2006/40 , H01G9/2031 , H01G9/2059 , H01L31/022466 , H01L31/035227 , H01L31/03529 , H01L31/072 , H01L31/1884 , H01L51/442 , Y02E10/50
摘要： A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.
摘要翻译： p型透明导电氧化物和含有p型透明导电氧化物的太阳能电池，其中p型透明导电氧化物包括掺杂有少于6价电子的元素的三氧化钼，该元素选自由碱金属，碱土金属，III族元素，IV族，V族，过渡元素及其组合组成。掺杂具有小于6价电子的元素导致孔数增加，从而增加空穴漂移速度，并使费米能级更接近p型材料的范围。因此，产生p型透明导电材料。该p型透明导电氧化物不仅具有高的电子空穴漂移速度，低电阻率，而且在可见光波长范围内也达到88％的透射率，因此非常适用于太阳能电池。

8. 发明申请

US20120135598A1 METHOD FOR FABRICATING INTERCONNECTIONS WITH CARBON NANOTUBES 有权
标题翻译：用碳纳米管制备互连的方法
公开(公告)号：US20120135598A1
公开(公告)日：2012-05-31
申请号：US13094388
申请日：2011-04-26
申请人： Hsin-wei WU , Chung-Min Tsai , Tri-Rung Yew
发明人： Hsin-wei WU , Chung-Min Tsai , Tri-Rung Yew
IPC分类号： H01L21/768
CPC分类号： H01L23/53276 , H01L21/76849 , H01L21/76876 , H01L21/76879 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper covering layer covering the carbon nanotubes. The present invention grows the carbon nanotubes between the catalytic layer and the upper covering layer. The upper covering layer protects the catalytic layer from being oxidized and thus enhances the growth of the carbon nanotubes. The carbon nanotubes are respectively connected with the lower substrate and an upper conductive wire via the catalytic layer and the upper covering layer, which results in a lower contact resistance. Moreover, the upper covering layer also functions as a metal-diffusion barrier layer to prevent metal from spreading to other materials via diffusion or other approaches.
摘要翻译：本发明的制造与碳纳米管的互连的方法包括以下步骤：在与基板连接的孔的周围形成包含催化剂层和上覆盖层的双层; 并在上覆盖层覆盖碳纳米管的催化层上生长碳纳米管。本发明在催化层和上覆盖层之间生长碳纳米管。上覆盖层保护催化层不被氧化，从而增强碳纳米管的生长。碳纳米管分别通过催化层和上覆盖层与下基板和上导电线连接，导致较低的接触电阻。此外，上覆盖层还用作金属扩散阻挡层，以防止金属通过扩散或其它方法扩散到其它材料。

9. 发明授权

US08368057B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US08368057B2
公开(公告)日：2013-02-05
申请号：US12807620
申请日：2010-09-09
申请人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
发明人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
IPC分类号： H01L29/08 , H01L51/00
CPC分类号： H01L51/0053 , H01L51/0545
摘要： An organic thin film transistor includes: a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic active layer. The organic active layer includes an organic semiconductor compound represented by the following formula (A) as defined in the specification.
摘要翻译：有机薄膜晶体管包括：栅极，栅极绝缘膜，源电极，漏电极和有机活性层。有机活性层包括由说明书中定义的下式（A）表示的有机半导体化合物。

10. 发明申请

US20080067681A1 INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：互连结构及其制造方法
公开(公告)号：US20080067681A1
公开(公告)日：2008-03-20
申请号：US11756853
申请日：2007-06-01
申请人： Tzu-chun Tseng , Tri-Rung Yew , Chung-Min Tsai
发明人： Tzu-chun Tseng , Tri-Rung Yew , Chung-Min Tsai
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/53276 , H01L21/28562 , H01L21/76849 , H01L21/76879 , H01L23/53238 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： An interconnection structure is provided. The interconnection structure includes a substrate, a conductive barrier layer, a dielectric layer and a carbon nanotube. A conductive region is disposed in the substrate. The conductive barrier layer is disposed over the conductive region and the conductive barrier layer includes iron, cobalt or nickel. The dielectric layer is disposed on the substrate. The carbon nanotube is disposed in the dielectric layer to electrically connect with the conductive barrier layer.
摘要翻译：提供互连结构。互连结构包括基板，导电阻挡层，电介质层和碳纳米管。导电区域设置在基板中。导电阻挡层设置在导电区域之上，导电阻挡层包括铁，钴或镍。电介质层设置在基板上。碳纳米管设置在电介质层中以与导电阻挡层电连接。

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