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1. 发明授权

US08368057B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US08368057B2
公开(公告)日：2013-02-05
申请号：US12807620
申请日：2010-09-09
申请人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
发明人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
IPC分类号： H01L29/08 , H01L51/00
CPC分类号： H01L51/0053 , H01L51/0545
摘要： An organic thin film transistor includes: a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic active layer. The organic active layer includes an organic semiconductor compound represented by the following formula (A) as defined in the specification.
摘要翻译：有机薄膜晶体管包括：栅极，栅极绝缘膜，源电极，漏电极和有机活性层。有机活性层包括由说明书中定义的下式（A）表示的有机半导体化合物。

2. 发明申请

US20110193065A1 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20110193065A1
公开(公告)日：2011-08-11
申请号：US12807620
申请日：2010-09-09
申请人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
发明人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
IPC分类号： H01L51/30
CPC分类号： H01L51/0053 , H01L51/0545
摘要： An organic thin film transistor includes: a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic active layer. The organic active layer includes an organic semiconductor compound represented by the following formula (A) as defined in the specification.
摘要翻译：有机薄膜晶体管包括：栅极，栅极绝缘膜，源电极，漏电极和有机活性层。有机活性层包括由说明书中定义的下式（A）表示的有机半导体化合物。

3. 发明授权

US08377779B1 Methods of manufacturing semiconductor devices and transistors 有权
标题翻译：制造半导体器件和晶体管的方法
公开(公告)号：US08377779B1
公开(公告)日：2013-02-19
申请号：US13342772
申请日：2012-01-03
申请人： Yu-Ping Wang
发明人： Yu-Ping Wang
IPC分类号： H01L21/336
CPC分类号： H01L29/66484 , H01L21/02225 , H01L29/66795 , H01L2029/7858
摘要： Methods of manufacturing semiconductor devices and transistors are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece comprising a plurality of fins, and forming a semiconductive material over a top surface of the plurality of fins. An etch stop layer is formed over the semiconductive material, and an insulating material is disposed over the etch stop layer. The insulating material and a portion of the etch stop layer are removed from over the plurality of fins. Forming the semiconductive material or forming the etch stop layer are controlled so that removing the portion of the etch stop layer does not remove the etch stop layer between a widest portion of the semiconductive material over the plurality of fins.
摘要翻译：公开了制造半导体器件和晶体管的方法。在一个实施例中，制造半导体器件的方法包括提供包括多个翅片的工件，以及在多个翅片的顶表面上形成半导体材料。在半导体材料上形成蚀刻停止层，并且绝缘材料设置在蚀刻停止层上。绝缘材料和蚀刻停止层的一部分从多个鳍上方移除。控制形成半导体材料或形成蚀刻停止层，使得去除蚀刻停止层的部分不会去除多个翅片上半导体材料的最宽部分之间的蚀刻停止层。

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