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1. 发明申请

US20120115304A1 ISOLATION STRUCTURE AND FORMATION METHOD THEREOF 有权
标题翻译：隔离结构及其形成方法
公开(公告)号：US20120115304A1
公开(公告)日：2012-05-10
申请号：US13351925
申请日：2012-01-17
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L21/762
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
摘要翻译：提供了包括基板的隔离结构。沟槽在衬底中。沟槽的侧壁具有第一倾斜表面和第二倾斜表面。第一倾斜面位于第二倾斜面上。第一倾斜面的斜率与第二倾斜面的斜率不同。第一倾斜面的长度大于15纳米。

2. 发明授权

US08298952B2 Isolation structure and formation method thereof 有权
标题翻译：隔离结构及其形成方法
公开(公告)号：US08298952B2
公开(公告)日：2012-10-30
申请号：US13351925
申请日：2012-01-17
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L21/70
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
摘要翻译：提供了包括基板的隔离结构。沟槽在衬底中。沟槽的侧壁具有第一倾斜表面和第二倾斜表面。第一倾斜面位于第二倾斜面上。第一倾斜面的斜率与第二倾斜面的斜率不同。第一倾斜面的长度大于15纳米。

3. 发明申请

US20100295147A1 ISOLATION STRUCTURE AND FORMATION METHOD THEREOF 有权
标题翻译：隔离结构及其形成方法
公开(公告)号：US20100295147A1
公开(公告)日：2010-11-25
申请号：US12470587
申请日：2009-05-22
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
摘要翻译：提供了包括基板的隔离结构。沟槽在衬底中。沟槽的侧壁具有第一倾斜表面和第二倾斜表面。第一倾斜面位于第二倾斜面上。第一倾斜面的斜率与第二倾斜面的斜率不同。第一倾斜面的长度大于15纳米。

4. 发明申请

US20120094494A1 METHODS FOR ETCHING MULTI-LAYER HARDMASKS 审中-公开
标题翻译：蚀刻多层硬质合金的方法
公开(公告)号：US20120094494A1
公开(公告)日：2012-04-19
申请号：US12904892
申请日：2010-10-14
申请人： Yu-Chung Chen , Shih-Ping Hong , Ming-Tsung Wu
发明人： Yu-Chung Chen , Shih-Ping Hong , Ming-Tsung Wu
IPC分类号： H01L21/308 , H01L21/3065
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/31116 , H01L21/31138
摘要： A method to further adjust the final CD of a material to be etched during an etching process, and after a photolithographic patterning process can include patterning a semiconductor substrate using a mask layer. The mask layer can comprise a hardmask material having a protruding feature with an initial width. A first plasma comprising carbon and fluorine can be introduced into a chamber, where residual carbon and fluorine is deposited on at least the chamber wall. A portion of the mask layer can then be removed with a second plasma incorporating the residual carbon and fluorine, whereby remaining hardmask material forms a feature pattern where the protruding feature has a final width different from the initial width. The feature pattern can then be transferred to the semiconductor substrate using the final width of the at least one protruding feature provided by the remaining hardmask material.
摘要翻译：在蚀刻工艺期间和在光刻图案化工艺之后进一步调整待蚀刻材料的最终CD的方法可以包括使用掩模层图案化半导体衬底。掩模层可以包括具有初始宽度的突出特征的硬掩模材料。包括碳和氟的第一等离子体可以被引入室中，其中残留的碳和氟沉积在至少室壁上。掩模层的一部分然后可以用包含残余碳和氟的第二等离子体去除，由此剩余的硬掩模材料形成突出特征具有不同于初始宽度的最终宽度的特征图案。然后可以使用由剩余的硬掩模材料提供的至少一个突出特征的最终宽度将特征图案转移到半导体衬底。

5. 发明授权

US08120140B2 Isolation structure and formation method thereof 有权
公开(公告)号：US08120140B2
公开(公告)日：2012-02-21
申请号：US12470587
申请日：2009-05-22
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L21/70
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.

6. 发明授权

US08748323B2 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US08748323B2
公开(公告)日：2014-06-10
申请号：US12217645
申请日：2008-07-07
申请人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
发明人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
IPC分类号： H01L21/768 , H01L21/3105 , H01L21/314
CPC分类号： H01L21/76838 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.
摘要翻译：提供了图案化方法。首先，提供其上具有目标材料层的基板。此后，在目标材料层上形成掩模层。之后，在掩模层上形成图案层，其中图案化层的材料包括含金属的物质。然后，将掩模层图案化以形成图案化掩模层。此外，使用图案化掩模层作为掩模来对目标材料层进行图案化。

7. 发明申请

US20100000969A1 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US20100000969A1
公开(公告)日：2010-01-07
申请号：US12217645
申请日：2008-07-07
申请人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
发明人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
IPC分类号： C23F1/00
CPC分类号： H01L21/76838 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.
摘要翻译：提供了图案化方法。首先，提供其上具有目标材料层的基板。此后，在目标材料层上形成掩模层。之后，在掩模层上形成图案层，其中图案化层的材料包括含金属的物质。然后，将掩模层图案化以形成图案化掩模层。此外，使用图案化掩模层作为掩模来对目标材料层进行图案化。

8. 发明授权

US07960835B2 Fabrication of metal film stacks having improved bottom critical dimension 有权
标题翻译：具有改进的底部临界尺寸的金属膜堆叠的制造
公开(公告)号：US07960835B2
公开(公告)日：2011-06-14
申请号：US12435336
申请日：2009-05-04
申请人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
发明人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
IPC分类号： H01L23/48
CPC分类号： H01L23/53238 , H01L21/0276 , H01L21/32139 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.
摘要翻译：描述了制造金属膜堆叠的方法，其减少或消除光刻不对准的不利影响。通过去除底部氮化钛屏障来增加底部临界尺寸。

9. 发明申请

US20100276807A1 FABRICATION OF METAL FILM STACKS HAVING IMPROVED BOTTOM CRITICAL DIMENSION 有权
标题翻译：具有改进的底部关键尺寸的金属膜堆的制造
公开(公告)号：US20100276807A1
公开(公告)日：2010-11-04
申请号：US12435336
申请日：2009-05-04
申请人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
发明人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/0276 , H01L21/32139 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.
摘要翻译：描述了制造金属膜堆叠的方法，其减少或消除光刻不对准的不利影响。通过去除底部氮化钛屏障来增加底部临界尺寸。

10. 发明授权

US08440576B2 Method for pitch reduction in integrated circuit fabrication 有权
标题翻译：集成电路制造中降噪的方法
公开(公告)号：US08440576B2
公开(公告)日：2013-05-14
申请号：US12109982
申请日：2008-04-25
申请人： Shih-Ping Hong
发明人： Shih-Ping Hong
IPC分类号： H01L21/337
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： A method for patterning a material is provided. The method includes patterning a second material over a first material over a substrate. A surface portion of the patterned second material is converted to form a third material and a remaining patterned second material, wherein the third material is around the remaining patterned second material. One of the remaining patterned second material and the third material is removed to form a mask. The first material is patterned by using the mask.
摘要翻译：提供了图案化材料的方法。该方法包括在第一材料上在衬底上图形化第二材料。图案化的第二材料的表面部分被转化以形成第三材料和剩余的图案化的第二材料，其中第三材料围绕剩余的图案化的第二材料。除去剩余的图案化第二材料和第三材料中的一个以形成掩模。通过使用掩模对第一材料进行图案化。

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