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1. 发明授权

US08298952B2 Isolation structure and formation method thereof 有权
标题翻译：隔离结构及其形成方法
公开(公告)号：US08298952B2
公开(公告)日：2012-10-30
申请号：US13351925
申请日：2012-01-17
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L21/70
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
摘要翻译：提供了包括基板的隔离结构。沟槽在衬底中。沟槽的侧壁具有第一倾斜表面和第二倾斜表面。第一倾斜面位于第二倾斜面上。第一倾斜面的斜率与第二倾斜面的斜率不同。第一倾斜面的长度大于15纳米。

2. 发明申请

US20100295147A1 ISOLATION STRUCTURE AND FORMATION METHOD THEREOF 有权
标题翻译：隔离结构及其形成方法
公开(公告)号：US20100295147A1
公开(公告)日：2010-11-25
申请号：US12470587
申请日：2009-05-22
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
摘要翻译：提供了包括基板的隔离结构。沟槽在衬底中。沟槽的侧壁具有第一倾斜表面和第二倾斜表面。第一倾斜面位于第二倾斜面上。第一倾斜面的斜率与第二倾斜面的斜率不同。第一倾斜面的长度大于15纳米。

3. 发明申请

US20100176481A1 Memory Device and Manufacturing Method Thereof 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：US20100176481A1
公开(公告)日：2010-07-15
申请号：US12351142
申请日：2009-01-09
申请人： Ming-Tsung Wu , Han-Hui Hsu
发明人： Ming-Tsung Wu , Han-Hui Hsu
IPC分类号： H01L23/58 , H01L21/76 , H01L21/302 , H01L21/02 , G11C11/34 , H01L23/14
CPC分类号： H01L21/31144 , H01L27/1052
摘要： A memory device and a manufacturing method thereof are provided. The manufacturing method of memory device includes the following steps. Firstly, a substrate having a substrate surface is provided. Next, at least two memory units separated via a space are formed on the substrate. Then, an insulating layer covering the memory units and the substrate surface is formed. After that, a mask layer only covering the bottom of the insulating layer is formed on the insulating layer. Afterwards, the part of the insulating layer partially covered by the mask layer is etched. Then, the mask layer is removed. Next, the part of the insulating layer where the mask layer is removed is etched. Lastly, a protecting layer is formed on the memory units and in the space between the memory units.
摘要翻译：提供了一种存储器件及其制造方法。存储器件的制造方法包括以下步骤。首先，提供具有基板表面的基板。接下来，在基板上形成经由空间分离的至少两个存储单元。然后，形成覆盖存储单元和基板表面的绝缘层。之后，在绝缘层上形成仅覆盖绝缘层底部的掩模层。之后，蚀刻部分被掩模层覆盖的部分绝缘层。然后，去除掩模层。接下来，蚀刻除去掩模层的绝缘层的部分。最后，在存储器单元和存储器单元之间的空间中形成保护层。

4. 发明申请

US20120115304A1 ISOLATION STRUCTURE AND FORMATION METHOD THEREOF 有权
标题翻译：隔离结构及其形成方法
公开(公告)号：US20120115304A1
公开(公告)日：2012-05-10
申请号：US13351925
申请日：2012-01-17
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L21/762
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
摘要翻译：提供了包括基板的隔离结构。沟槽在衬底中。沟槽的侧壁具有第一倾斜表面和第二倾斜表面。第一倾斜面位于第二倾斜面上。第一倾斜面的斜率与第二倾斜面的斜率不同。第一倾斜面的长度大于15纳米。

5. 发明授权

US07960835B2 Fabrication of metal film stacks having improved bottom critical dimension 有权
标题翻译：具有改进的底部临界尺寸的金属膜堆叠的制造
公开(公告)号：US07960835B2
公开(公告)日：2011-06-14
申请号：US12435336
申请日：2009-05-04
申请人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
发明人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
IPC分类号： H01L23/48
CPC分类号： H01L23/53238 , H01L21/0276 , H01L21/32139 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.
摘要翻译：描述了制造金属膜堆叠的方法，其减少或消除光刻不对准的不利影响。通过去除底部氮化钛屏障来增加底部临界尺寸。

6. 发明申请

US20100276807A1 FABRICATION OF METAL FILM STACKS HAVING IMPROVED BOTTOM CRITICAL DIMENSION 有权
标题翻译：具有改进的底部关键尺寸的金属膜堆的制造
公开(公告)号：US20100276807A1
公开(公告)日：2010-11-04
申请号：US12435336
申请日：2009-05-04
申请人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
发明人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/0276 , H01L21/32139 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.
摘要翻译：描述了制造金属膜堆叠的方法，其减少或消除光刻不对准的不利影响。通过去除底部氮化钛屏障来增加底部临界尺寸。

7. 发明申请

US20100156327A1 Portable Electronic Device with Touch Illumination Function and Touch Illumination Method Thereof 审中-公开
标题翻译：带触摸照明功能的便携式电子设备及其触摸照明方法
公开(公告)号：US20100156327A1
公开(公告)日：2010-06-24
申请号：US12512551
申请日：2009-07-30
申请人： Mu-Tsai Chang , Chao-Feng Kang , Ming-Tsung Wu , Jhung-Ren Huang
发明人： Mu-Tsai Chang , Chao-Feng Kang , Ming-Tsung Wu , Jhung-Ren Huang
IPC分类号： H05B37/02 , H03K17/96
CPC分类号： H05B37/0227
摘要： A portable electronic device with a touch illumination function and a touch illumination method thereof are provided. The portable electronic device with the touch illumination function includes an input module, a touch sensor, and an illumination module. The touch sensor is disposed around the input module, senses a touch motion of the input module, and generates a touch signal according to the touch motion. The illumination module is disposed around the input module, coupled with the touch sensor, and controls the illumination module to generate a light source to illuminate the input module according to the touch signal.
摘要翻译：提供具有触摸照明功能的便携式电子设备及其触摸照明方法。具有触摸照明功能的便携式电子设备包括输入模块，触摸传感器和照明模块。触摸传感器设置在输入模块周围，感测输入模块的触摸运动，并根据触摸运动产生触摸信号。照明模块围绕输入模块设置，与触摸传感器耦合，并且控制照明模块以根据触摸信号产生光源以照亮输入模块。

8. 发明授权

US08748323B2 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US08748323B2
公开(公告)日：2014-06-10
申请号：US12217645
申请日：2008-07-07
申请人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
发明人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
IPC分类号： H01L21/768 , H01L21/3105 , H01L21/314
CPC分类号： H01L21/76838 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.
摘要翻译：提供了图案化方法。首先，提供其上具有目标材料层的基板。此后，在目标材料层上形成掩模层。之后，在掩模层上形成图案层，其中图案化层的材料包括含金属的物质。然后，将掩模层图案化以形成图案化掩模层。此外，使用图案化掩模层作为掩模来对目标材料层进行图案化。

9. 发明申请

US20100000969A1 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US20100000969A1
公开(公告)日：2010-01-07
申请号：US12217645
申请日：2008-07-07
申请人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
发明人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
IPC分类号： C23F1/00
CPC分类号： H01L21/76838 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.
摘要翻译：提供了图案化方法。首先，提供其上具有目标材料层的基板。此后，在目标材料层上形成掩模层。之后，在掩模层上形成图案层，其中图案化层的材料包括含金属的物质。然后，将掩模层图案化以形成图案化掩模层。此外，使用图案化掩模层作为掩模来对目标材料层进行图案化。

10. 发明申请

US20120094494A1 METHODS FOR ETCHING MULTI-LAYER HARDMASKS 审中-公开
标题翻译：蚀刻多层硬质合金的方法
公开(公告)号：US20120094494A1
公开(公告)日：2012-04-19
申请号：US12904892
申请日：2010-10-14
申请人： Yu-Chung Chen , Shih-Ping Hong , Ming-Tsung Wu
发明人： Yu-Chung Chen , Shih-Ping Hong , Ming-Tsung Wu
IPC分类号： H01L21/308 , H01L21/3065
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/31116 , H01L21/31138
摘要： A method to further adjust the final CD of a material to be etched during an etching process, and after a photolithographic patterning process can include patterning a semiconductor substrate using a mask layer. The mask layer can comprise a hardmask material having a protruding feature with an initial width. A first plasma comprising carbon and fluorine can be introduced into a chamber, where residual carbon and fluorine is deposited on at least the chamber wall. A portion of the mask layer can then be removed with a second plasma incorporating the residual carbon and fluorine, whereby remaining hardmask material forms a feature pattern where the protruding feature has a final width different from the initial width. The feature pattern can then be transferred to the semiconductor substrate using the final width of the at least one protruding feature provided by the remaining hardmask material.
摘要翻译：在蚀刻工艺期间和在光刻图案化工艺之后进一步调整待蚀刻材料的最终CD的方法可以包括使用掩模层图案化半导体衬底。掩模层可以包括具有初始宽度的突出特征的硬掩模材料。包括碳和氟的第一等离子体可以被引入室中，其中残留的碳和氟沉积在至少室壁上。掩模层的一部分然后可以用包含残余碳和氟的第二等离子体去除，由此剩余的硬掩模材料形成突出特征具有不同于初始宽度的最终宽度的特征图案。然后可以使用由剩余的硬掩模材料提供的至少一个突出特征的最终宽度将特征图案转移到半导体衬底。

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