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    • 6. 发明申请
    • RADIO FREQUENCY SWITCH CIRCUIT
    • 无线电频率开关电路
    • US20110187417A1
    • 2011-08-04
    • US13016349
    • 2011-01-28
    • Yu Sin KIMYoun Suk KIMDong Hyun BAEKSun Woo YOON
    • Yu Sin KIMYoun Suk KIMDong Hyun BAEKSun Woo YOON
    • H03K17/94
    • H03K17/94H01L2924/0002H01L2924/00
    • A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors.
    • 将RF开关和开关控制器形成在单个CMOS基板上的浮动开关电路和浮动电阻器连接到深N型阱基板,N型阱基板和P型阱基板, 从而相对于输入功率增加线性度。 在具有改变RF信号的传输路径的至少一个NMOS(N型金属氧化物半导体)开关的RF开关中,形成在第一深N型阱基板上的N型端子通过浮动电阻器接收驱动电力,P型 形成在第一P型基板上的端子通过浮动电阻器接收主体电力,并且形成在第一P型基板上的两个N型端子通过浮动电阻器接收栅极电力,并且在具有至少一个NMOS开关的开关控制器中 控制RF开关的路径变化的至少一个PMOS(P型金属氧化物半导体)开关,形成在第二深N型阱基板上的N型端子和形成在第一N型基板上的N型端子接收驱动电力 浮动电阻
    • 7. 发明申请
    • ADDITIVE FOR NON-AQUEOUS ELECTROLYTE AND SECONDARY BATTERY USING THE SAME
    • 添加非水电解质和使用相同的二次电池
    • US20100099905A1
    • 2010-04-22
    • US12649100
    • 2009-12-29
    • Yu Sin KIMHyeong Jin KIMHye Yun CHAHo Chun LEE
    • Yu Sin KIMHyeong Jin KIMHye Yun CHAHo Chun LEE
    • C07C255/45
    • H01M10/0567H01M10/052H01M10/0569H01M10/4235
    • Disclosed is a compound represented by the following formula 1: wherein, each of R1˜R13 independently represents —H, —F, —Cl, —Br, —I, —OH, —SH, —COOH, —PO3H2, —NH2, —NO2, —O(CH2CH2O)nH (wherein, n is an integer of 1˜5), C1˜C12 alkyl group, C1˜C12 aminoalkyl group, C1˜C12 hydroxyalkyl group, C1˜C12 haloalkyl group, C2˜C12 alkenyl group, C1˜C12 alkoxy group, C1˜C12 alkylamino group, C1˜C12 dialkylamino group, C6˜C18 aryl group, C6˜C18 aminoaryl group, C6˜C18 hydroxyaryl group, C6˜C18 haloaryl group, C7˜C18 benzyl group, C7˜C18 aminobenzyl group, C7˜C18 hydroxybenzyl group, C7˜C18 halobenzyl group, or nitrile group (—CN); and at least one of R4˜R13 is nitrile group (—CN). A non-aqueous electrolyte comprising: (i) a lithium salt, (ii) a solvent, and (iii) a compound represented by formula 1; and a secondary battery comprising the non-aqueous electrolyte are also disclosed. When the compound represented by formula 1 is added to a non-aqueous electrolyte, it is possible to improve the safety of a secondary battery in an overcharged state.
    • 公开了由下式1表示的化合物:其中,R 1〜R 13各自独立地表示-H,-F,-Cl,-Br,-I,-OH,-SH,-COOH,-PO 3 H 2,-NH 2, -NO 2,-O(CH 2 CH 2 O)n H(其中n为1〜5的整数),C 1〜C 12烷基,C 1〜C 12氨基烷基,C 1〜C 12羟烷基,C 1〜C 12卤代烷基,C 2〜C 12烯基 基团,C 1〜C 12烷氧基,C 1〜C 12烷基氨基,C 1〜C 12二烷基氨基,C 6〜C 18芳基,C 6〜C 18氨基芳基,C 6〜C 18羟基芳基,C 6〜C 18卤代芳基,C 7〜C 18苄基, C 7〜C 18氨基苄基,C 7〜C 18羟基苄基,C 7〜C 18卤代苄基或腈基(-CN); 并且R 4〜R 13中的至少一个为腈基(-CN)。 一种非水电解质,其包含:(i)锂盐,(ii)溶剂,和(iii)由式1表示的化合物; 还公开了包含非水电解质的二次电池。 当将由式1表示的化合物加入到非水电解质中时,可以提高过充电状态的二次电池的安全性。
    • 9. 发明申请
    • RADIO FREQUENCY SWITCH CIRCUIT
    • 无线电频率开关电路
    • US20110187475A1
    • 2011-08-04
    • US13016499
    • 2011-01-28
    • Yu Sin KIMYoun Suk KIMDong Hyun BAEKSun Woo YOON
    • Yu Sin KIMYoun Suk KIMDong Hyun BAEKSun Woo YOON
    • H01P1/15H01L27/092
    • H01L27/092H01L2924/0002H01P1/15H01L2924/00
    • A radio frequency (RF) switch circuit is disclosed to restrict an input signal input to the RF switch from being transferred to a switch controller when a floating resistor is connected to an NMOS FET and a PMOS FET of the RF switch and the switch controller formed through a standard CMOS (Complementary Metal Oxide Semiconductor) process. The RF switch circuit includes: an RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch formed on a single chip substrate and changing a transmission path of an RF signal; a switch controller having at least one NMOS switch and PMOS (P type Metal Oxide Semiconductor) formed on the chip substrate and controlling changing of a path of the RF switch; and a limiter having a deep N type well diode formed on the chip substrate and limiting the level of an RF signal transferred from the RF switch to the switch controller, wherein the NMOS switch of the RF signal receives corresponding power through a floating resistor, and the at least one NMOS switch and PNMOS switch of the switch controller receives corresponding power through a floating resistor.
    • 公开了射频(RF)开关电路,用于将浮动电阻器连接到RF开关的NMOS FET和PMOS FET并形成开关控制器时,将输入到RF开关的输入信号限制为传送到开关控制器 通过标准CMOS(互补金属氧化物半导体)工艺。 RF开关电路包括:具有至少一个NMOS(N型金属氧化物半导体)开关的RF开关,其形成在单个芯片衬底上并改变RF信号的传输路径; 开关控制器,具有形成在芯片基板上的至少一个NMOS开关和PMOS(P型金属氧化物半导体),并控制RF开关的路径的变化; 以及限制器,其具有形成在芯片基板上的深N型阱二极管,并且限制从RF开关传送到开关控制器的RF信号的电平,其中RF信号的NMOS开关通过浮动电阻器接收相应的功率,以及 开关控制器的至少一个NMOS开关和PNMOS开关通过浮动电阻器接收相应的功率。