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    • 4. 发明申请
    • POWER AMPLIFIER
    • 功率放大器
    • US20110156817A1
    • 2011-06-30
    • US12712071
    • 2010-02-24
    • Hyeon Seok HWANGYoo Sam NAMoon Suk JEONGGyu Suck KIMByeong Hak JO
    • Hyeon Seok HWANGYoo Sam NAMoon Suk JEONGGyu Suck KIMByeong Hak JO
    • H03F3/16
    • H03F1/223
    • Disclosed herein is a power amplifier. The power amplifier includes a first common source transistor for amplifying an input signal into a predetermined level, a second common source transistor for compensating for input capacitance and performing auxiliary amplification for the first common source transistor, and a common gate transistor connected to the first common source transistor in a cascode structure, configured to be connected in parallel to the second common source transistor and prevent the first common source transistor from breaking down, and configured to output a signal amplified by a value obtained by adding the gain of the first common source transistor and the gain of the second common source transistor to each other.
    • 这里公开了功率放大器。 功率放大器包括用于将输入信号放大到预定电平的第一公共源极晶体管,用于补偿输入电容并对第一公共源晶体管执行辅助放大的第二公共源极晶体管,以及连接到第一公共栅极晶体管的公共栅晶体管 源极晶体管,其被配置为并联连接到第二公共源极晶体管,并且防止第一公共源极晶体管分解,并且被配置为输出通过将第一公共源的增益相加而获得的值放大的信号 晶体管和第二公共源极晶体管的增益。
    • 5. 发明申请
    • WIDE-BAND AMPLIFIER CIRCUIT WITH IMPROVED GAIN FLATNESS
    • 具有改进增益平滑度的宽带放大器电路
    • US20100308920A1
    • 2010-12-09
    • US12620151
    • 2009-11-17
    • Moon Suk JEONGYoo Sam Na
    • Moon Suk JEONGYoo Sam Na
    • H03F3/68
    • H03F1/42H03F2200/36
    • There is provided a wide-band amplifier circuit with improved gain flatness. The wide-band amplifier circuit includes a first resonant load unit connected to an operating power terminal, providing a preset first load, and forming a preset first resonant point, a second resonant load unit connected to the operating power terminal, providing a preset second load, and forming a second resonant point set to a frequency different from the first resonant point; a first amplification unit receiving operating power via the first load of the first resonant load unit, having an amplification band characteristic determined according to the first resonant point of the first resonant load unit, and amplifying an input signal; and a second amplification unit receiving operating power via the second load, having an amplification band characteristic determined according to the second resonant point, and amplifying an input signal from the first amplification unit.
    • 提供了具有改善的增益平坦度的宽带放大器电路。 宽带放大器电路包括连接到工作电源端子的第一谐振负载单元,提供预设的第一负载,以及形成预设的第一谐振点,连接到工作电源端子的第二谐振负载单元,提供预设的第二负载 并且形成设置成与所述第一谐振点不同的频率的第二谐振点; 第一放大单元,经由所述第一谐振负载单元的第一负载接收具有根据所述第一谐振负载单元的所述第一谐振点确定的放大带特性并且放大输入信号的工作电力; 以及第二放大单元,经由所述第二负载接收工作电力,具有根据所述第二谐振点确定的放大频带特性,以及放大来自所述第一放大单元的输入信号。
    • 8. 发明申请
    • ACTIVE BALUN WITH STACKED STRUCTURE
    • 主动BALUN与堆叠结构
    • US20110037522A1
    • 2011-02-17
    • US12646351
    • 2009-12-23
    • Moon Suk JEONGYoo Sam NA
    • Moon Suk JEONGYoo Sam NA
    • H03F3/04
    • H03H11/32
    • An active balun with a stacked structure includes: a first amplification unit including a first transistor having a first terminal connected with a first input terminal, a second terminal connected with a power voltage terminal, and a third terminal connected with an output terminal; a second amplification unit including a second transistor having a first terminal connected with a second input terminal, a second terminal connected with the output terminal, and a third terminal connected with a ground; and a capacitance matching unit connected between the first terminal and the third terminal of the first transistor and having a pre-set matching capacitance.
    • 具有堆叠结构的主动平衡 - 不平衡变换器包括:第一放大单元,包括具有与第一输入端连接的第一端子的第一晶体管,与电源电压端子连接的第二端子和与输出端子连接的第三端子; 第二放大单元,包括具有与第二输入端子连接的第一端子的第二晶体管,与输出端子连接的第二端子和与地连接的第三端子; 以及电容匹配单元,连接在第一晶体管的第一端子和第三端子之间并且具有预设匹配电容。