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1. 发明申请

US20140302779A1 METHOD, DEVICE AND SYSTEM FOR ESTABLISHING CONVERSATION RELATIONSHIP 审中-公开
标题翻译：建立对话关系的方法，装置和系统
公开(公告)号：US20140302779A1
公开(公告)日：2014-10-09
申请号：US14113266
申请日：2012-09-18
申请人： Yu Lei , Jing He , Kui Fang , Hualin Zou , Bin Chen , Liwei Ye , Bo Li , Youdong Fu , Qinglian Wang
发明人： Yu Lei , Jing He , Kui Fang , Hualin Zou , Bin Chen , Liwei Ye , Bo Li , Youdong Fu , Qinglian Wang
IPC分类号： H04B5/00 , H04W4/00
CPC分类号： H04B5/0031 , G06F21/44 , H04L51/00 , H04L51/04 , H04L51/20 , H04L63/0823 , H04L67/141 , H04L67/28 , H04W4/21 , H04W4/80 , H04W8/005 , H04W12/00514 , H04W12/08 , H04W76/14 , H04W84/18
摘要： Disclosed are a method, device and system for establishing conversation relation, which relates to the field of internet and. The method comprises the following steps: local terminal recognizes the opposite terminal within a preset range and establishes NFC connection with the opposite terminal, both of local terminal and opposite terminal have NFC module installed and instant messaging application running; when touching is detected, local terminal initiates a NFC request to opposite terminal via NFC connection, obtain opposite terminal user ID and certificate, and sends request information to the server; the server establishes conversation relation between local terminal and opposite terminal according to request information. With the present invention, local terminal obtains opposite terminal user ID and certificate by touching, and sends request information which includes local terminal user ID, opposite terminal user ID and certificate to the server, so that the server can establish sessions between local terminal and local terminal without certification of both sides, it avoids the trouble of locating, verifying, establishing friendship via network before session between friends within touch effectively
摘要翻译：公开了一种建立对话关系的方法，装置和系统，涉及到互联网领域。该方法包括以下步骤：本地终端在预设范围内识别对端，与对端建立NFC连接，本端和对端均安装NFC模块，即时通信应用运行; 当检测到触摸时，本地终端通过NFC连接向对端发起NFC请求，获得相对的终端用户ID和证书，并向服务器发送请求信息; 服务器根据请求信息建立本地终端和对端之间的会话关系。通过本发明，本地终端通过触摸获取相对的终端用户ID和证书，并向服务器发送包括本地终端用户ID，相对终端用户ID和证书的请求信息，使得服务器可以建立本地终端与本地终端之间的会话终端没有双方的认证，避免了在有效触摸朋友之间的会话之前定位，验证，建立友谊的麻烦

2. 发明授权

US11929691B1 Triboelectric generator systems and methods for energy harvesting and sensing applications 有权
公开(公告)号：US11929691B1
公开(公告)日：2024-03-12
申请号：US17939777
申请日：2022-09-07
申请人： Gang Wang , Yu Lei , Moonhyung Jang , Jacob Lee
发明人： Gang Wang , Yu Lei , Moonhyung Jang , Jacob Lee
IPC分类号： H02N1/04
CPC分类号： H02N1/04
摘要： A triboelectric generator can include respective contact members including a first contact member and second contact member. The respective contact members can be movable with respect to each other such that the respective contact members separate from each other in a first configuration and contact each other in a second configuration. The first contact member can include a first conductive layer and a contact layer. The second contact member can be spaced apart from the first contact member in the first configuration and can include an insulating contact layer and a second conductive layer. The insulating contact layer can be configured to come into contact with the contact layer of the first contact member and the transition of the respective contact members from the first configuration to the second configuration can create triboelectric charges. In some examples, the first contact member can include a non-contact insulating layer.

3. 发明授权

US08642468B2 NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors 有权
标题翻译： NMOS金属栅极材料，制造方法和使用具有金属基前体的CVD和ALD工艺的设备
公开(公告)号：US08642468B2
公开(公告)日：2014-02-04
申请号：US13093710
申请日：2011-04-25
申请人： Seshadri Ganguli , Srinivas Gandikota , Yu Lei , Xinliang Lu , Sang Ho Yu , Hoon Kim , Paul F. Ma , Mei Chang , Maitreyee Mahajani , Patricia M. Liu
发明人： Seshadri Ganguli , Srinivas Gandikota , Yu Lei , Xinliang Lu , Sang Ho Yu , Hoon Kim , Paul F. Ma , Mei Chang , Maitreyee Mahajani , Patricia M. Liu
IPC分类号： H01L21/4763
CPC分类号： H01L21/28008 , C23C16/06 , C23C16/32 , C23C16/42 , C23C16/45542 , H01L21/28079 , H01L21/28088 , H01L21/28097 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/823814 , H01L21/823842 , H01L29/495 , H01L29/4966
摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
摘要翻译：本发明的实施方案通常提供沉积含金属材料及其组合物的方法。所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

4. 发明申请

US20120252207A1 POST DEPOSITION TREATMENTS FOR CVD COBALT FILMS 失效
标题翻译：用于CVD钴薄膜的后沉积处理
公开(公告)号：US20120252207A1
公开(公告)日：2012-10-04
申请号：US13174692
申请日：2011-06-30
申请人： Yu Lei , Xinyu Fu , Anantha Subramani , Seshadri Ganguli , Srinivas Gandikota
发明人： Yu Lei , Xinyu Fu , Anantha Subramani , Seshadri Ganguli , Srinivas Gandikota
IPC分类号： H01L21/283 , B82Y40/00
CPC分类号： H01L21/02697 , B82Y40/00 , H01L21/28556 , H01L21/28562 , H01L21/7681 , H01L21/76834 , H01L21/76846 , H01L21/7685 , H01L21/76856 , H01L21/76858 , H01L21/76862 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76885 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.
摘要翻译：本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

5. 发明授权

US11230508B1 Green oxidizer compositions and methods 有权
公开(公告)号：US11230508B1
公开(公告)日：2022-01-25
申请号：US16042746
申请日：2018-07-23
申请人： James Edwin Smith, Jr. , Chen Zhang , Yu Lei
发明人： James Edwin Smith, Jr. , Chen Zhang , Yu Lei
IPC分类号： D03D23/00 , D03D43/00 , C06B25/34 , C07D305/08 , C06B47/08 , C06B25/00
摘要： The present disclosure generally pertains to green oxidizer compositions and method of synthesizing and using the same. Such green oxidizers are stable, may be used in conventional bipropellant thrusters, including, but not limited to LDACS applications, and offer several benefits over conventional oxidizers with respect to toxicity and/or corrosion. The present disclosure also relates to methods of synthesizing poly-nitrated oxetane, a green oxidizer, in an Argon-rich environment.

6. 发明申请

US20120282705A1 Explosives Detection Substrate and Methods of Using the Same 有权
标题翻译：爆炸物检测基板及其使用方法
公开(公告)号：US20120282705A1
公开(公告)日：2012-11-08
申请号：US13432078
申请日：2012-03-28
申请人： Yu Lei , Ying Wang
发明人： Yu Lei , Ying Wang
IPC分类号： G01N21/64 , G01N21/59
CPC分类号： G01N21/6428 , G01N21/64 , G01N21/643 , G01N31/224 , G01N31/227 , G01N33/22 , G01N33/227 , G01N2021/6421 , G01N2021/6432 , Y10T436/17 , Y10T436/173076 , Y10T436/212
摘要： Provided herein are explosives detection substrates which include an electrospun (electro)sprayed and/or dry spun aromatic polymer, such as polystyrene, and a small molecule fluorophore. Methods for detecting an explosive material using such substrates are also provided.
摘要翻译：本文提供了包括电喷雾（电）喷雾和/或干纺的芳族聚合物如聚苯乙烯和小分子荧光团的炸药检测基材。还提供了使用这种基板检测爆炸性材料的方法。

7. 发明授权

US07770634B2 Gas lift apparatus for flushing and snubbing well 有权
标题翻译：用于冲洗和缓冲的气举装置
公开(公告)号：US07770634B2
公开(公告)日：2010-08-10
申请号：US12250511
申请日：2008-10-13
申请人： Yu Lei , Yong Li , Qiang Wang , Zhenghua Wu , Zhimin Xu , Zhensong Wang , Meijuan Suo
发明人： Yu Lei , Yong Li , Qiang Wang , Zhenghua Wu , Zhimin Xu , Zhensong Wang , Meijuan Suo
IPC分类号： E21B43/16
CPC分类号： E21B43/122 , E21B43/123
摘要： A gas lift production apparatus is provided for use in flushing and snubbing well operation. The apparatus comprises upper production string and lower production string. The upper production string includes at least one side pocket mandrel carrying a gas lift valve, tubular strings connected with every side pocket mandrel, a sliding sleeve installed as part of the production string below side pocket mandrels and a latch seal assembly threaded in the tubular string below the sliding sleeve. The lower production string includes a single bore packer below the latch seal assembly, tubular strings, a landing nipple and a bell mouth at the bottom of the production string. The upper production string are run in and removed as a single unit from the packer which is anchored within the well casing. It is emphasized that this apparatus is provided with three functions such as producing a gas lift well, flushing well and snubbing well operation. Application of the apparatus will prevent flushing or killing fluid from polluting the reservoir and increase production efficiency.
摘要翻译：提供一种用于冲洗和冲洗井操作的气举生产设备。该装置包括上部生产线和较低的生产线。上部生产线包括至少一个承载气举阀的侧袋心轴，与每个侧袋心轴连接的管状串，作为生产线的一部分安装在侧袋心轴下方的滑动套筒和螺纹连接在管柱中的闩锁密封组件滑动套筒下方。较低的生产线包括在锁紧密封组件下方的单孔封隔器，管状串，降落接头和在生产线底部的喇叭口。上部生产线作为锚定在井套管内的封隔器作为单个单元运行和移除。要强调的是，该装置具有产生气举井，冲洗井和缓冲井操作三种功能。该设备的应用将防止冲洗或杀死液体污染储层，提高生产效率。

8. 发明授权

US09330939B2 Method of enabling seamless cobalt gap-fill 有权
标题翻译：实现无缝钴填隙的方法
公开(公告)号：US09330939B2
公开(公告)日：2016-05-03
申请号：US13786644
申请日：2013-03-06
申请人： Bhushan N. Zope , Avgerinos V. Gelatos , Bo Zheng , Yu Lei , Xinyu Fu , Srinivas Gandikota , Sang-Ho Yu , Mathew Abraham
发明人： Bhushan N. Zope , Avgerinos V. Gelatos , Bo Zheng , Yu Lei , Xinyu Fu , Srinivas Gandikota , Sang-Ho Yu , Mathew Abraham
IPC分类号： H01L21/76 , H01L21/48 , H01L21/02 , H01L21/768 , H01L21/285
CPC分类号： H01L21/76879 , H01L21/02057 , H01L21/2855 , H01L21/28556 , H01L21/4846 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L23/5329 , H01L29/66621
摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
摘要翻译：提供了在半导体器件的接触结构中沉积接触金属层的方法。在一个实施例中，提供了一种在半导体器件中沉积用于形成接触结构的接触金属层的方法。该方法包括进行循环金属沉积工艺，以将接触金属层沉积在衬底上并退火设置在衬底上的接触金属层。循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将接触金属层的一部分沉积在衬底上，将接触金属层的该部分暴露于等离子体处理工艺，并重复将衬底暴露于沉积前体气体混合物，并将接触金属层的部分暴露于等离子体处理工艺，直到实现接触金属层的预定厚度。

9. 发明申请

US20140017408A1 Deposition Of N-Metal Films Comprising Aluminum Alloys 有权
标题翻译：包含铝合金的N-金属膜的沉积
公开(公告)号：US20140017408A1
公开(公告)日：2014-01-16
申请号：US13930194
申请日：2013-06-28
申请人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
发明人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
IPC分类号： C23C18/00
CPC分类号： C23C18/00 , C23C16/08 , C23C16/18 , C23C16/45527 , C23C16/45534 , C23C16/45553
摘要： Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
摘要翻译：提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

10. 发明申请

US20120258602A1 Method for Metal Deposition Using Hydrogen Plasma 失效
标题翻译：使用氢等离子体金属沉积的方法
公开(公告)号：US20120258602A1
公开(公告)日：2012-10-11
申请号：US13082968
申请日：2011-04-08
申请人： Anantha K. Subramani , John C. Forster , Seshadri Ganguli , Michael S. Jackson , Xinliang Lu , Wei W. Wang , Xinyu Fu , Yu Lei
发明人： Anantha K. Subramani , John C. Forster , Seshadri Ganguli , Michael S. Jackson , Xinliang Lu , Wei W. Wang , Xinyu Fu , Yu Lei
IPC分类号： H01L21/31
CPC分类号： C23C16/08 , C23C16/45542 , H01L21/28079 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/76843 , H01L29/495 , H01L29/513 , H01L29/517
摘要： Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.
摘要翻译：提供了使用CVD和ALD技术形成和处理纯金属层的方法。在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。还提供了防止氢等离子体渗透金属前体层的方法。

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