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1. 发明申请

US20110039475A1 POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLSHING AGENT 有权
标题翻译：抛光剂和使用抛光剂抛光底物的方法
公开(公告)号：US20110039475A1
公开(公告)日：2011-02-17
申请号：US12988898
申请日：2009-04-22
申请人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
发明人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： B24B29/00 , C09K3/14
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
摘要翻译：公开了一种抛光剂，其包括：水; 四价金属氢氧化物颗粒; 和添加剂，其中所述添加剂含有阳离子聚合物和阳离子多糖中的至少一种。本发明可以提供一种抛光剂，其能够在平坦化绝缘膜的CMP技术中以高速抛光较少的抛光缺陷并且具有高的氧化硅膜和阻挡膜的抛光速率比的抛光剂。本发明还可以提供用于储存抛光剂的抛光剂组，以及使用该研磨剂研磨基材的方法。

2. 发明授权

US08617275B2 Polishing agent and method for polishing substrate using the polishing agent 有权
公开(公告)号：US08617275B2
公开(公告)日：2013-12-31
申请号：US12988898
申请日：2009-04-22
申请人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
发明人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： H01L21/31053 , H01L21/3213
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.

3. 发明授权

US09022834B2 Polishing solution for CMP and polishing method using the polishing solution 有权
标题翻译：使用抛光液的CMP抛光方法抛光液
公开(公告)号：US09022834B2
公开(公告)日：2015-05-05
申请号：US13139117
申请日：2011-06-10
申请人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
发明人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
IPC分类号： B24B1/00 , C09G1/02 , H01L21/3105 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
摘要翻译：根据本发明的用于CMP的抛光溶液包括磨粒，添加剂和水，并且抛光溶液包含满足特定条件的添加剂的有机化合物。本发明的抛光方法是用于在表面上抛光具有氧化硅膜的基板，并且抛光方法包括用抛光垫抛光氧化硅膜的步骤，同时在氧化硅膜之间提供用于CMP的抛光溶液和抛光垫。

4. 发明申请

US20110275285A1 POLISHING SOLUTION FOR CMP AND POLISHING METHOD USING THE POLISHING SOLUTION 有权
标题翻译：使用抛光溶液的CMP抛光方法的抛光方案
公开(公告)号：US20110275285A1
公开(公告)日：2011-11-10
申请号：US13139117
申请日：2011-06-10
申请人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
发明人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
IPC分类号： B24B1/00 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
摘要翻译：根据本发明的用于CMP的抛光溶液包括磨粒，添加剂和水，并且抛光溶液包含满足特定条件的添加剂的有机化合物。本发明的抛光方法是用于在表面上抛光具有氧化硅膜的基板，并且抛光方法包括用抛光垫抛光氧化硅膜的步骤，同时在氧化硅膜之间提供用于CMP的抛光溶液和抛光垫。

5. 发明授权

US08836089B2 Positive photosensitive resin composition, method of creating resist pattern, and electronic component 有权
标题翻译：正型感光性树脂组合物，抗蚀剂图案的制造方法以及电子部件
公开(公告)号：US08836089B2
公开(公告)日：2014-09-16
申请号：US13823260
申请日：2011-09-02
申请人： Akitoshi Tanimoto , Shigeru Nobe , Kei Kasuya , Hiroshi Matsutani , Takumi Ueno , Yu Aoki , Shingo Tahara
发明人： Akitoshi Tanimoto , Shigeru Nobe , Kei Kasuya , Hiroshi Matsutani , Takumi Ueno , Yu Aoki , Shingo Tahara
IPC分类号： H01L23/29 , H01L21/47 , G03F7/075 , G03F7/039 , G03F7/40 , G03F7/022
CPC分类号： G03F7/039 , G03F7/0226 , G03F7/0751 , G03F7/40 , H01L2224/11
摘要： The positive-type photosensitive resin composition according to the present invention comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound that produces an acid by light, a thermal crosslinking agent, and a silane compound having at least one functional group selected from an epoxy group and a sulfide group.
摘要翻译：根据本发明的正型感光性树脂组合物包含具有酚羟基的碱溶性树脂，通过光产生酸的化合物，热交联剂和具有至少一个选自以下的官能团的硅烷化合物：环氧基和硫醚基。

6. 发明申请

US20100120250A1 METAL POLISHING SLURRY AND POLISHING METHOD 有权
标题翻译：金属抛光浆和抛光方法
公开(公告)号：US20100120250A1
公开(公告)日：2010-05-13
申请号：US12527607
申请日：2008-02-22
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
IPC分类号： H01L21/302 , H01L21/304 , H01L21/306 , C09K13/00 , C09K13/04 , C09K13/06
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F1/18 , C23F1/26 , H01L21/30625 , H01L21/3212
摘要： The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.
摘要翻译：本发明涉及含有磨粒，金属氧化物溶解剂和水的金属抛光浆料，其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。使用本发明的金属研磨浆，可以得到层状电介质层的研磨速度大的金属研磨浆料，并且抛光面的平坦度高。这种金属抛光浆料可以提供适合于制造更细和更薄，尺寸精度和电特性优异的可靠性高的半导体器件的方法，并且可以降低成本。

7. 发明申请

US20090283715A1 POLISHING SLURRY FOR CMP 审中-公开
标题翻译： CMP抛光浆
公开(公告)号：US20090283715A1
公开(公告)日：2009-11-19
申请号：US12307341
申请日：2007-07-03
申请人： Shigeru Nobe , Takashi Shinoda , Takafumi Sakurada , Takaaki Tanaka , Yoshikazu Oomori , Tadahiro Kimura , Masato Fukasawa
发明人： Shigeru Nobe , Takashi Shinoda , Takafumi Sakurada , Takaaki Tanaka , Yoshikazu Oomori , Tadahiro Kimura , Masato Fukasawa
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The invention relates to a polishing slurry for CMP containing abrasive and a fang and seam restrainer, wherein the fang and seam restrainer is at least one selected from polycarboxylic acids, polycarboxylic acid derivatives, or carboxylic-acid-containing copolymers. According to this, provided is a polishing slurry for CMP which restrains a fang phenomenon or a seam phenomenon that an insulated film near wiring regions is excessively polished, thereby giving a high flatness to a polished face.
摘要翻译：本发明涉及一种用于CMP的研磨浆料，其含有研磨剂和防皱和接缝抑制剂，其中，所述方针和接缝限制器是选自多元羧酸，多元羧酸衍生物或含羧酸的共聚物中的至少一种。据此，提供了抑制了布线区域附近的绝缘膜被过度抛光从而赋予抛光面的高平坦度的限制现象的CMP现象的研磨浆料。

8. 发明申请

US20090094901A1 CMP Polishing Liquid and Polishing Method 审中-公开
标题翻译： CMP抛光液和抛光方法
公开(公告)号：US20090094901A1
公开(公告)日：2009-04-16
申请号：US12298342
申请日：2007-04-24
申请人： Takashi Shinoda , Shigeru Nobe , Takaaki Tanaka
发明人： Takashi Shinoda , Shigeru Nobe , Takaaki Tanaka
IPC分类号： B24B37/00 , H01L21/304 , H01L21/306 , C09K3/14
CPC分类号： H01L21/7684 , B24B37/044 , C09G1/02 , H01L21/3212
摘要： A CMP polishing liquid being capable of using in a chemical mechanical polishing comprising of: a first chemical mechanical polishing step of polishing a conductive substance layer of a substrate having an interlayer insulation film containing convex and concave regions on a surface thereof, a barrier layer coating along the surface of the interlayer insulation film, and the conductive substance layer coating the barrier layer while filling the concave regions, and thus exposing the barrier layer in the convex regions; and a second chemical mechanical polishing step of exposing the interlayer insulation film in the convex regions by polishing the barrier layer exposed in the first chemical mechanical polishing step; characterized in that a difference (B)−(A) is 650 {acute over (Å)} or less, wherein the (A) is a polishing amount of the interlayer insulation film in a field area when the interlayer insulation film in the field area having a width of 1,000 μm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more; and the (B) is a polishing amount of the interlayer insulation film in a stripe-shaped patterned area having a total width of 1,000 μm or more wherein a wiring metal region having a width of 90 μm and the interlayer insulation film region having a width of 10 μm are aligned alternately on the substrate when the interlayer insulation film in the field area having the width of 1,000 μm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more.
摘要翻译：一种能够在化学机械抛光中使用的CMP抛光液，包括：第一化学机械抛光步骤，其在其表面上抛光具有包含凸凹区域的层间绝缘膜的基板的导电物质层，阻挡层涂层沿着所述层间绝缘膜的表面，并且所述导电物质层在填充所述凹区域的同时涂覆所述阻挡层，从而使所述阻挡层暴露在所述凸部区域中。以及第二化学机械抛光步骤，通过对在所述第一化学机械抛光步骤中暴露的所述阻挡层进行抛光来使所述凸起区域中的所述层间绝缘膜曝光; 其特征在于，差异（B） - （A）为650（锐锐度（））以下，其中，（A）是场内层间绝缘膜的场区域中的层间绝缘膜的研磨量将形成在基板上的层间绝缘膜区域的宽度为1,000μm以上的区域抛光至深度为400（）以上的深度; （B）是总宽度为1000μm以上的条状图案区域中的层间绝缘膜的研磨量，其中宽度为90μm的布线金属区域和宽度为90μm的层间绝缘膜区域当在衬底上形成的层间绝缘膜区域的宽度为1,000μm或更大的场区域中的层间绝缘膜被抛光到深度为400（）时，交替地在衬底上对准10微米。或者更多。

9. 发明申请

US20070117394A1 Polishing slurry for CMP and polishing method 审中-公开
标题翻译：抛光浆料用于CMP和抛光方法
公开(公告)号：US20070117394A1
公开(公告)日：2007-05-24
申请号：US11545787
申请日：2006-10-11
申请人： Takashi Shinoda , Shigeru Nobe , Takafumi Sakurada , Yoshikazu Oomori , Tadahiro Kimura
发明人： Takashi Shinoda , Shigeru Nobe , Takafumi Sakurada , Yoshikazu Oomori , Tadahiro Kimura
IPC分类号： H01L21/66 , H01L21/461
CPC分类号： C09G1/02 , C23F3/04 , H01L21/30625 , H01L21/31055 , H01L21/3212 , H01L21/32125 , H01L21/7684 , H01L21/76865
摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.
摘要翻译：本发明提供了通过抑制电子在阻挡导体和导电物质之间的边界附近转移而抑制导电物质的布线的腐蚀或抑制阻挡导体和导电物质的双金属腐蚀的CMP抛光浆料，例如作为铜。本发明提供了用于CMP的抛光浆料，用于至少对与导体层接触的导体层和导电物质层进行抛光，其中在50±5℃下导电物质与导体之间的电位差的绝对值为0.25 当电位计的正电极和负电极分别连接到导电物质和导体时，抛光浆料中的V或更小。用于CMP的抛光浆料优选包含至少一种选自含有羟基，羰基，羧基，氨基，酰胺基和亚磺酰基中的任何一种的杂环化合物并且含有氮和硫原子中的至少一个的化合物。

10. 发明授权

US07687590B2 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts 失效
公开(公告)号：US07687590B2
公开(公告)日：2010-03-30
申请号：US11207199
申请日：2005-08-19
申请人： Haruaki Sakurai , Koichi Abe , Kazuhiro Enomoto , Shigeru Nobe
发明人： Haruaki Sakurai , Koichi Abe , Kazuhiro Enomoto , Shigeru Nobe
IPC分类号： C08G77/06
CPC分类号： H01L23/5329 , C09D183/02 , C09D183/04 , H01L2924/0002 , H01L2924/3011 , Y10T428/31663 , H01L2924/00
摘要： The composition for forming silica based coating of the invention comprises siloxane resin such as an alkoxysilane as component (a), a solvent such as an alcohol capable of dissolving the siloxane resin as component (b), an ammonium salt, etc. as component (c) and a thermal decomposing/volatile compound as component (d), wherein the stress of the coating obtained by heat treatment at 150° C./3 min is 10 MPa and the specific permittivity of the silica based coating obtained by final curing is less than 3.0. The composition for forming silica based coating according to the invention can form a silica based coating having low permittivity, excellent adhesion and sufficient mechanical strength.

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