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1. 发明申请

US20090283715A1 POLISHING SLURRY FOR CMP 审中-公开
标题翻译： CMP抛光浆
公开(公告)号：US20090283715A1
公开(公告)日：2009-11-19
申请号：US12307341
申请日：2007-07-03
申请人： Shigeru Nobe , Takashi Shinoda , Takafumi Sakurada , Takaaki Tanaka , Yoshikazu Oomori , Tadahiro Kimura , Masato Fukasawa
发明人： Shigeru Nobe , Takashi Shinoda , Takafumi Sakurada , Takaaki Tanaka , Yoshikazu Oomori , Tadahiro Kimura , Masato Fukasawa
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The invention relates to a polishing slurry for CMP containing abrasive and a fang and seam restrainer, wherein the fang and seam restrainer is at least one selected from polycarboxylic acids, polycarboxylic acid derivatives, or carboxylic-acid-containing copolymers. According to this, provided is a polishing slurry for CMP which restrains a fang phenomenon or a seam phenomenon that an insulated film near wiring regions is excessively polished, thereby giving a high flatness to a polished face.
摘要翻译：本发明涉及一种用于CMP的研磨浆料，其含有研磨剂和防皱和接缝抑制剂，其中，所述方针和接缝限制器是选自多元羧酸，多元羧酸衍生物或含羧酸的共聚物中的至少一种。据此，提供了抑制了布线区域附近的绝缘膜被过度抛光从而赋予抛光面的高平坦度的限制现象的CMP现象的研磨浆料。

2. 发明申请

US20070117394A1 Polishing slurry for CMP and polishing method 审中-公开
标题翻译：抛光浆料用于CMP和抛光方法
公开(公告)号：US20070117394A1
公开(公告)日：2007-05-24
申请号：US11545787
申请日：2006-10-11
申请人： Takashi Shinoda , Shigeru Nobe , Takafumi Sakurada , Yoshikazu Oomori , Tadahiro Kimura
发明人： Takashi Shinoda , Shigeru Nobe , Takafumi Sakurada , Yoshikazu Oomori , Tadahiro Kimura
IPC分类号： H01L21/66 , H01L21/461
CPC分类号： C09G1/02 , C23F3/04 , H01L21/30625 , H01L21/31055 , H01L21/3212 , H01L21/32125 , H01L21/7684 , H01L21/76865
摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.
摘要翻译：本发明提供了通过抑制电子在阻挡导体和导电物质之间的边界附近转移而抑制导电物质的布线的腐蚀或抑制阻挡导体和导电物质的双金属腐蚀的CMP抛光浆料，例如作为铜。本发明提供了用于CMP的抛光浆料，用于至少对与导体层接触的导体层和导电物质层进行抛光，其中在50±5℃下导电物质与导体之间的电位差的绝对值为0.25 当电位计的正电极和负电极分别连接到导电物质和导体时，抛光浆料中的V或更小。用于CMP的抛光浆料优选包含至少一种选自含有羟基，羰基，羧基，氨基，酰胺基和亚磺酰基中的任何一种的杂环化合物并且含有氮和硫原子中的至少一个的化合物。

3. 发明授权

US08609541B2 Polishing slurry for metal films and polishing method 有权
标题翻译：金属抛光抛光浆和抛光方法
公开(公告)号：US08609541B2
公开(公告)日：2013-12-17
申请号：US12667154
申请日：2008-07-04
申请人： Takaaki Tanaka , Masato Fukasawa , Shigeru Nobe , Takafumi Sakurada , Takashi Shinoda
发明人： Takaaki Tanaka , Masato Fukasawa , Shigeru Nobe , Takafumi Sakurada , Takashi Shinoda
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7684 , C09G1/02 , H01L21/3212 , H01L21/76819
摘要： Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.
摘要翻译：提供了用于金属膜的抛光浆料和抑制侵蚀和接缝的产生的抛光方法，并且使得用其抛光的表面的平坦度或因此高。浆料和方法是研磨浆料，对于包含磨料颗粒，甲基丙烯酸类聚合物和水的金属膜和分别使用该浆料的抛光方法。

4. 发明申请

US20110009033A1 POLISHING SLURRY FOR METAL FILMS AND POLISHING METHOD 有权
标题翻译：金属膜抛光浆和抛光方法
公开(公告)号：US20110009033A1
公开(公告)日：2011-01-13
申请号：US12667154
申请日：2008-07-04
申请人： Takaaki Tanaka , Masato Fukasawa , Shigeru Nobe , Takafumi Sakurada , Takashi Shinoda
发明人： Takaaki Tanaka , Masato Fukasawa , Shigeru Nobe , Takafumi Sakurada , Takashi Shinoda
IPC分类号： B24B1/00 , C09K13/00
CPC分类号： H01L21/7684 , C09G1/02 , H01L21/3212 , H01L21/76819
摘要： Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.
摘要翻译：提供了用于金属膜的抛光浆料和抑制侵蚀和接缝的产生的抛光方法，并且使得用其抛光的表面的平坦度或因此高。浆料和方法是研磨浆料，对于包含磨料颗粒，甲基丙烯酸类聚合物和水的金属膜和分别使用该浆料的抛光方法。

5. 发明申请

US20100120250A1 METAL POLISHING SLURRY AND POLISHING METHOD 有权
标题翻译：金属抛光浆和抛光方法
公开(公告)号：US20100120250A1
公开(公告)日：2010-05-13
申请号：US12527607
申请日：2008-02-22
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
IPC分类号： H01L21/302 , H01L21/304 , H01L21/306 , C09K13/00 , C09K13/04 , C09K13/06
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F1/18 , C23F1/26 , H01L21/30625 , H01L21/3212
摘要： The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.
摘要翻译：本发明涉及含有磨粒，金属氧化物溶解剂和水的金属抛光浆料，其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。使用本发明的金属研磨浆，可以得到层状电介质层的研磨速度大的金属研磨浆料，并且抛光面的平坦度高。这种金属抛光浆料可以提供适合于制造更细和更薄，尺寸精度和电特性优异的可靠性高的半导体器件的方法，并且可以降低成本。

6. 发明授权

US08821750B2 Metal polishing slurry and polishing method 有权
标题翻译：金属抛光浆和抛光方法
公开(公告)号：US08821750B2
公开(公告)日：2014-09-02
申请号：US12527607
申请日：2008-02-22
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
IPC分类号： C09G1/02 , C23F1/18 , C23F1/26 , H01L21/304 , H01L21/306
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F1/18 , C23F1/26 , H01L21/30625 , H01L21/3212
摘要： The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.
摘要翻译：本发明涉及含有磨粒，金属氧化物溶解剂和水的金属抛光浆料，其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。使用本发明的金属研磨浆，可以得到层状电介质层的研磨速度高的金属研磨浆料，并且抛光面的平坦度高。这种金属抛光浆料可以提供适合于制造更细和更薄，尺寸精度和电特性优异的可靠性高的半导体器件的方法，并且可以降低成本。

7. 发明授权

US08481428B2 Polishing slurry and polishing method 有权
公开(公告)号：US08481428B2
公开(公告)日：2013-07-09
申请号：US13299699
申请日：2011-11-18
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

8. 发明授权

US07994058B2 Polishing slurry and polishing method 有权
公开(公告)号：US07994058B2
公开(公告)日：2011-08-09
申请号：US11802813
申请日：2007-05-25
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

9. 发明申请

US20070232197A1 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US20070232197A1
公开(公告)日：2007-10-04
申请号：US11802813
申请日：2007-05-25
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有水和研磨剂的研磨浆料，其中研磨剂的表面用烷基并且优选还包含金属氧化剂，水溶性聚合物和金属抑制剂。

10. 发明申请

US20090156007A1 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US20090156007A1
公开(公告)日：2009-06-18
申请号：US12320752
申请日：2009-02-04
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料，优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

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