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1. 发明授权

US09305764B2 Plasma light source, inspection apparatus including plasma light source, and method of generating plasma light 有权
标题翻译：等离子体光源，包括等离子体光源的检查装置和产生等离子体光的方法
公开(公告)号：US09305764B2
公开(公告)日：2016-04-05
申请号：US14613988
申请日：2015-02-04
申请人： Young-kyu Park , Wook-rae Kim , Kwang-soo Kim , Tae-joong Kim , Byeong-hwan Jeon
发明人： Young-kyu Park , Wook-rae Kim , Kwang-soo Kim , Tae-joong Kim , Byeong-hwan Jeon
IPC分类号： H01J61/28 , H01J65/04 , G02B27/14
CPC分类号： G02B27/141 , G02B17/0856 , G02B19/0028 , G02B19/0047 , G02B19/0095 , H01J65/04
摘要： A plasma light source includes a chamber having an ionizable medium therein, an ignition source configured to provide first electromagnetic radiation to the chamber, a sustaining source configured to separately provide second electromagnetic radiation to the chamber, a first curved mirror positioned adjacent the chamber, and a second curved mirror positioned opposite the first mirror and arranged to direct the first electromagnetic radiation toward the chamber. The second electromagnetic radiation may be different than the first electromagnetic radiation. Related devices and methods of operation are also discussed.
摘要翻译：等离子体光源包括其中具有可电离介质的腔室，被配置为向腔室提供第一电磁辐射的点火源，被配置为向腔室单独提供第二电磁辐射的维持源，邻近腔室定位的第一弯曲镜，以及第二弯曲镜，其与第一反射镜相对设置，并布置成将第一电磁辐射引向腔室。第二电磁辐射可以不同于第一电磁辐射。还讨论了相关设备和操作方法。

2. 发明申请

US20160005588A1 Plasma Light Source, Inspection Apparatus Including Plasma Light Source, and Method of Generating Plasma Light 有权
标题翻译：等离子体光源，包括等离子体光源的检测装置和等离子体光的产生方法
公开(公告)号：US20160005588A1
公开(公告)日：2016-01-07
申请号：US14613988
申请日：2015-02-04
申请人： Young-kyu Park , Wook-rae Kim , Kwang-soo Kim , Tae-joong Kim , Byeong-hwan Jeon
发明人： Young-kyu Park , Wook-rae Kim , Kwang-soo Kim , Tae-joong Kim , Byeong-hwan Jeon
IPC分类号： H01J65/04 , G02B27/14
CPC分类号： G02B27/141 , G02B17/0856 , G02B19/0028 , G02B19/0047 , G02B19/0095 , H01J65/04
摘要： A plasma light source includes a chamber having an ionizable medium therein, an ignition source configured to provide first electromagnetic radiation to the chamber, a sustaining source configured to separately provide second electromagnetic radiation to the chamber, a first curved mirror positioned adjacent the chamber, and a second curved mirror positioned opposite the first mirror and arranged to direct the first electromagnetic radiation toward the chamber. The second electromagnetic radiation may be different than the first electromagnetic radiation. Related devices and methods of operation are also discussed.
摘要翻译：等离子体光源包括其中具有可电离介质的腔室，被配置为向腔室提供第一电磁辐射的点火源，被配置为向腔室单独提供第二电磁辐射的维持源，邻近腔室定位的第一弯曲镜，以及第二弯曲镜，其与第一反射镜相对设置，并布置成将第一电磁辐射引向腔室。第二电磁辐射可以不同于第一电磁辐射。还讨论了相关设备和操作方法。

3. 发明授权

US09006106B2 Method of removing a metal hardmask 有权
标题翻译：去除金属硬掩模的方法
公开(公告)号：US09006106B2
公开(公告)日：2015-04-14
申请号：US13889550
申请日：2013-05-08
申请人： Chia-Ling Kao , Kwang-soo Kim , Sean S. Kang , Srinivas D. Nemani
发明人： Chia-Ling Kao , Kwang-soo Kim , Sean S. Kang , Srinivas D. Nemani
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/31116 , H01L21/32136 , H01L21/76811 , H01L21/76813 , H01L21/76814 , H01L2221/1063
摘要： Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film includes forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. The method also includes etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching involving using a plasma etch based on SiFx. The etching also involves forming an SiOx passivation layer at least on sidewalls of the low-k dielectric film formed during the etching. The method also includes removing the metal nitride hardmask layer by a dry etch process, where the SiOx passivation layer protects the low-k dielectric film during the removing.
摘要翻译：描述了在超低k电介质膜存在下去除金属硬掩模的方法。在一个示例中，图案化低k电介质膜的方法包括在形成在衬底上方的低k电介质膜上形成的金属氮化物硬掩模层中形成图案。该方法还包括使用金属氮化物硬掩模层作为掩模的蚀刻，该图案至少部分地进入低k电介质膜，该蚀刻涉及使用基于SiFx的等离子体蚀刻。蚀刻还包括至少在蚀刻期间形成的低k电介质膜的侧壁上形成SiO x钝化层。该方法还包括通过干蚀刻工艺去除金属氮化物硬掩模层，其中SiO x钝化层在去除期间保护低k绝缘膜。

4. 发明授权

US07601555B2 Wafer inspection system and method thereof 有权
标题翻译：晶圆检查系统及其方法
公开(公告)号：US07601555B2
公开(公告)日：2009-10-13
申请号：US11132352
申请日：2005-05-19
申请人： Kwang-soo Kim , Koung-su Shin , Seung-min Choi , Yu-han Jeong
发明人： Kwang-soo Kim , Koung-su Shin , Seung-min Choi , Yu-han Jeong
IPC分类号： H01L21/00
CPC分类号： G06T7/0004 , G01R31/2831 , G06T2207/30148
摘要： A wafer inspection system includes an electrical testing part to control a probe to be in contact with a pad of a wafer to perform a predetermined electrical test, a defect detecting part to detect a defect in the wafer passing through the electrical test, a defect sorting part to sort the defect detected in the defect detecting part by an in-line method, and a defective determining part to determine whether the wafer is a defective according to a sorting result of the defect sorting part. The wafer inspection system and a method thereof can determine the kinds of the defect in the wafer during a fabricating procedure, so that it is possible to instantly and correctly determine whether the die on the wafer is a defective.
摘要翻译：晶片检查系统包括电测试部分，用于控制探针与晶片的焊盘接触以执行预定的电测试;缺陷检测部分，用于检测通过电测试的晶片中的缺陷，缺陷分类通过在线方式对在缺陷检测部分中检测到的缺陷进行分类的部分，以及根据缺陷分类部分的分类结果确定晶片是否有缺陷的缺陷确定部分。晶片检查系统及其方法可以在制造过程中确定晶片中的缺陷的种类，使得可以立即且正确地确定晶片上的裸片是否有缺陷。

5. 发明申请

US20090173679A1 BIOLOGICAL REMOVAL METHOD OF PHOSPHORUS AND NITROGEN USING GRANULATED METHAN-OXIDIZING BACTERIA AND APPARATUS THEREFOR 有权
标题翻译：使用生成甲烷氧化细菌的细菌和氮的生物去除方法及其设备
公开(公告)号：US20090173679A1
公开(公告)日：2009-07-09
申请号：US12405029
申请日：2009-03-16
申请人： Kwang-soo Kim , Hee-Ja Lee , I-Tae Kim , Kwang-Ho Ahn , Chai-Sung Gee , Sung-Youn Kim , Ji-Seon Yoo , Eui-Sin Lee , Sung-Pok Paik , Chul-Ki Oh , Kwang-Yoon Lee
发明人： Kwang-soo Kim , Hee-Ja Lee , I-Tae Kim , Kwang-Ho Ahn , Chai-Sung Gee , Sung-Youn Kim , Ji-Seon Yoo , Eui-Sin Lee , Sung-Pok Paik , Chul-Ki Oh , Kwang-Yoon Lee
IPC分类号： C02F3/30 , B01D24/00 , C02F3/10
CPC分类号： C02F3/308 , C02F3/34 , C02F3/348 , Y02E50/343 , Y10S210/903 , Y10S210/906
摘要： A biological removal method of phosphorus and nitrogen includes supplying a mixture gas into a gas holder. Inflow water and return water are supplied into the gas holder to make the mixture gas dissolved in the inflow water and the return water. The return water was provided from a granulation biological reaction tank. The inflow water and the return water including the dissolved mixture gas are transported to the granulation biological reaction tank. A nitrogen-based component is removed from the inflow water and the return water using methan-oxidizing bacteria granulated in the granulation biological reaction tank. Treated water without the nitrogen-based component is transported to an anoxic tank for treatment, and discharged from the anoxic tank.
摘要翻译：磷和氮的生物去除方法包括将混合气体供应到气体保持器中。将进水和回水供给到气体保持器中，使混合气体溶解在流入水和回水中。返回水由造粒生物反应罐提供。包括溶解的混合气体的流入水和回水被运送到造粒生物反应罐。使用在造粒生物反应罐中造粒的甲烷氧化菌，从流入水和回水中除去氮基成分。没有氮基组分的处理水被运输到缺氧罐进行处理，并从缺氧罐排出。

6. 发明授权

US07531409B2 Fabrication method and structure for providing a recessed channel in a nonvolatile memory device 有权
标题翻译：用于在非易失性存储器件中提供凹陷通道的制造方法和结构
公开(公告)号：US07531409B2
公开(公告)日：2009-05-12
申请号：US11583796
申请日：2006-10-20
申请人： Sang-Pil Sim , Kwang-soo Kim , Chan-Kwang Park , Heon-Kyu Lee
发明人： Sang-Pil Sim , Kwang-soo Kim , Chan-Kwang Park , Heon-Kyu Lee
IPC分类号： H01L21/336
CPC分类号： H01L27/11524 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521
摘要： A method of fabricating a nonvolatile memory device includes preparing a semiconductor substrate including a cell array region. The method also includes forming a recessed region in the cell array region by etching the semiconductor substrate. The method includes etching at least a portion of the semiconductor substrate that partially includes the recessed region and forming first and second trenches that differ in depth, intersect the recessed region, and link with each other. The method includes forming a device isolation layer having rugged bottoms and defining an active region by filling an insulating material in the first and second trenches. The method includes forming a gate insulation layer on the semiconductor substrate of the active region including the recessed region and forming a gate structure on the gate insulation layer, to fill the recessed region, the gate structure including a floating gate, an intergate insulating pattern, and a control gate.
摘要翻译：制造非易失性存储器件的方法包括制备包括单元阵列区域的半导体衬底。该方法还包括通过蚀刻半导体衬底在电池阵列区域中形成凹陷区域。该方法包括蚀刻半导体衬底的至少一部分，其部分地包括凹陷区域并形成深度不同，与凹陷区域相交并彼此连接的第一和第二沟槽。该方法包括形成具有粗糙底部的器件隔离层，并且通过在第一和第二沟槽中填充绝缘材料来限定有源区。该方法包括在包括凹陷区域的有源区的半导体衬底上形成栅极绝缘层，并在栅极绝缘层上形成栅极结构，以填充凹陷区域，栅极结构包括浮置栅极，栅极间绝缘图案，和控制门。

7. 发明授权

US09144405B2 User health monitoring system comprising 3D glasses and display apparatus, and display apparatus and control method thereof 有权
标题翻译：包括3D眼镜和显示装置的用户健康监测系统及其显示装置及其控制方法
公开(公告)号：US09144405B2
公开(公告)日：2015-09-29
申请号：US13542314
申请日：2012-07-05
申请人： Kwang-soo Kim , Do-sung Jung
发明人： Kwang-soo Kim , Do-sung Jung
IPC分类号： H04N13/04 , A61B5/00 , A61B5/024 , A61B5/0476 , A61B5/0488 , G02C1/00
CPC分类号： A61B5/743 , A61B5/02416 , A61B5/0476 , A61B5/0488 , A61B5/6803
摘要： A user health monitoring system having 3D glasses and a display apparatus and a display apparatus and a control method thereof, the user health monitoring system including: 3D glasses which obtain biosignal information of a user and transmit; and a display apparatus which receives the biosignal information transmitted by the 3D glasses, obtains a health index of the user by using the biosignal information and controls a display state according to the health index. With this configuration, a user's health condition may be monitored in real-time with a biosignal of the user viewing a 3D image and a 3D display state may be controlled according to the user's health condition to thereby protect a user's health.
摘要翻译：一种具有3D眼镜和显示装置及其显示装置及其控制方法的用户健康监视系统，所述用户健康监视系统包括：获取用户的生物信息信息并传送的3D眼镜; 以及接收由3D眼镜发送的生物信息信息的显示装置，通过使用生物信息信息获取用户的健康指数，并根据健康指标来控制显示状态。利用该配置，可以用用户观看3D图像的生物信号实时地监视用户的健康状况，并且可以根据用户的健康状况来控制3D显示状态，从而保护用户的健康。

8. 发明申请

US20140273496A1 METHOD OF REMOVING A METAL HARDMASK 有权
标题翻译：移除金属硬质合金的方法
公开(公告)号：US20140273496A1
公开(公告)日：2014-09-18
申请号：US13889550
申请日：2013-05-08
申请人： Chia-Ling Kao , Kwang-soo Kim , Sean S. Kang , Srinivas D. Nemani
发明人： Chia-Ling Kao , Kwang-soo Kim , Sean S. Kang , Srinivas D. Nemani
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/31116 , H01L21/32136 , H01L21/76811 , H01L21/76813 , H01L21/76814 , H01L2221/1063
摘要： Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film includes forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. The method also includes etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching involving using a plasma etch based on SiFx. The etching also involves forming an SiOx passivation layer at least on sidewalls of the low-k dielectric film formed during the etching. The method also includes removing the metal nitride hardmask layer by a dry etch process, where the SiOx passivation layer protects the low-k dielectric film during the removing.
摘要翻译：描述了在超低k电介质膜存在下去除金属硬掩模的方法。在一个示例中，图案化低k电介质膜的方法包括在形成在衬底上方的低k电介质膜上形成的金属氮化物硬掩模层中形成图案。该方法还包括使用金属氮化物硬掩模层作为掩模的蚀刻，该图案至少部分地进入低k电介质膜，该蚀刻涉及使用基于SiFx的等离子体蚀刻。蚀刻还包括至少在蚀刻期间形成的低k电介质膜的侧壁上形成SiO x钝化层。该方法还包括通过干蚀刻工艺去除金属氮化物硬掩模层，其中SiO x钝化层在去除期间保护低k绝缘膜。

9. 发明申请

US20090200596A1 FABRICATION METHOD AND STRUCTURE FOR PROVIDING A RECESSED CHANNEL IN A NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：用于在非易失性存储器件中提供被记录的通道的制造方法和结构
公开(公告)号：US20090200596A1
公开(公告)日：2009-08-13
申请号：US12417127
申请日：2009-04-02
申请人： Sang-Pil Sim , Kwang-soo Kim , Chan-Kwang Park , Heon-Kyu Lee
发明人： Sang-Pil Sim , Kwang-soo Kim , Chan-Kwang Park , Heon-Kyu Lee
IPC分类号： H01L29/788
CPC分类号： H01L27/11524 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L29/40114
摘要： A method of fabricating a nonvolatile memory device includes preparing a semiconductor substrate including a cell array region. The method also includes forming a recessed region in the cell array region by etching the semiconductor substrate. The method includes etching at least a portion of the semiconductor substrate that partially includes the recessed region and forming first and second trenches that differ in depth, intersect the recessed region, and link with each other. The method includes forming a device isolation layer having rugged bottoms and defining an active region by filling an insulating material in the first and second trenches. The method includes forming a gate insulation layer on the semiconductor substrate of the active region including the recessed region and forming a gate structure on the gate insulation layer, to fill the recessed region, the gate structure including a floating gate, an intergate insulating pattern, and a control gate.
摘要翻译：制造非易失性存储器件的方法包括制备包括单元阵列区域的半导体衬底。该方法还包括通过蚀刻半导体衬底在电池阵列区域中形成凹陷区域。该方法包括蚀刻半导体衬底的至少一部分，其部分地包括凹陷区域并形成深度不同，与凹陷区域相交并彼此连接的第一和第二沟槽。该方法包括形成具有粗糙底部的器件隔离层，并且通过在第一和第二沟槽中填充绝缘材料来限定有源区。该方法包括在包括凹陷区域的有源区的半导体衬底上形成栅极绝缘层，并在栅极绝缘层上形成栅极结构，以填充凹陷区域，栅极结构包括浮置栅极，栅极间绝缘图案，和控制门。

10. 发明申请

US20070122968A1 Fabrication method and structure for providing a recessed channel in a nonvolatile memory device 有权
标题翻译：用于在非易失性存储器件中提供凹陷通道的制造方法和结构
公开(公告)号：US20070122968A1
公开(公告)日：2007-05-31
申请号：US11583796
申请日：2006-10-20
申请人： Sang-Pil Sim , Kwang-soo Kim , Chan-Kwang Park , Heon-Kyu Lee
发明人： Sang-Pil Sim , Kwang-soo Kim , Chan-Kwang Park , Heon-Kyu Lee
IPC分类号： H01L21/8242 , H01L21/336 , H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L27/11524 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521
摘要： A method of fabricating a nonvolatile memory device includes preparing a semiconductor substrate including a cell array region. The method also includes forming a recessed region in the cell array region by etching the semiconductor substrate. The method includes etching at least a portion of the semiconductor substrate that partially includes the recessed region and forming first and second trenches that differ in depth, intersect the recessed region, and link with each other. The method includes forming a device isolation layer having rugged bottoms and defining an active region by filling an insulating material in the first and second trenches. The method includes forming a gate insulation layer on the semiconductor substrate of the active region including the recessed region and forming a gate structure on the gate insulation layer, to fill the recessed region, the gate structure including a floating gate, an intergate insulating pattern, and a control gate.
摘要翻译：制造非易失性存储器件的方法包括制备包括单元阵列区域的半导体衬底。该方法还包括通过蚀刻半导体衬底在电池阵列区域中形成凹陷区域。该方法包括蚀刻半导体衬底的至少一部分，其部分地包括凹陷区域并形成深度不同，与凹陷区域相交并彼此连接的第一和第二沟槽。该方法包括形成具有粗糙底部的器件隔离层，并且通过在第一和第二沟槽中填充绝缘材料来限定有源区。该方法包括在包括凹陷区域的有源区的半导体衬底上形成栅极绝缘层，并在栅极绝缘层上形成栅极结构，以填充凹陷区域，栅极结构包括浮置栅极，栅极间绝缘图案，和控制门。

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