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1. 发明申请

US20100173550A1 METHOD OF MANUFACTURING NANOFIBER WEB 审中-公开
标题翻译：制造NANOFIBER WEB的方法
公开(公告)号：US20100173550A1
公开(公告)日：2010-07-08
申请号：US12294832
申请日：2007-03-28
申请人： Young-Hwan Lee , Hwan-Kwon Rho , Jin-Hwan Choi , Sang-Yoon Lee
发明人： Young-Hwan Lee , Hwan-Kwon Rho , Jin-Hwan Choi , Sang-Yoon Lee
IPC分类号： D04H3/08 , B29C47/00
CPC分类号： D01D5/0061 , D04H1/4382 , D04H1/728 , Y10T442/696
摘要： A method of manufacturing a nanofiber web using an electrospinning method is disclosed. The method comprises the steps of: supplying a polymer solution to the surface of a metal roller 10 with a direct current high voltage applied thereto; spinning the polymer solution supplied to the surface of the metal roller 10 toward a collector 40 of a metal plate with a direct current high voltage applied thereto having a different charge from that of the metal roller 10 to volatilize nanofibers, wherein the collector of the metal plate is located on the horizontal surface of the metal roller 10; and coating the volatilized nanofibers 70 on the collector 40. This method can improve the uniformity of the web, make the management of a production process easier, freely change type of web to be produced, make the maintenance and repair of facilities convenient, and simplify the facilities.
摘要翻译：公开了使用静电纺丝方法制造纳米纤维网的方法。该方法包括以下步骤：向施加有直流高压的金属辊10的表面供应聚合物溶液; 将提供给金属辊10的表面的聚合物溶液向具有与金属辊10的电荷不同的电荷的直流高电压的金属板的集电体40旋转以挥发纳米纤维，其中金属的集电体板位于金属辊10的水平表面上; 并且将挥发的纳米纤维70涂覆在收集器40上。这种方法可以提高幅材的均匀性，使得生产过程的管理更容易，自由地改变要生产的网的类型，使设施的维护和修理方便，简化设施。

2. 发明授权

US08586979B2 Oxide semiconductor transistor and method of manufacturing the same 有权
公开(公告)号：US08586979B2
公开(公告)日：2013-11-19
申请号：US12320701
申请日：2009-02-02
申请人： Kyoung-Seok Son , Tae-Sang Kim , Jang-Yeon Kwon , Ji-Sim Jung , Sang-Yoon Lee , Myung-Kwan Ryu , Kyung-Bae Park , Byung-Wook Yoo
发明人： Kyoung-Seok Son , Tae-Sang Kim , Jang-Yeon Kwon , Ji-Sim Jung , Sang-Yoon Lee , Myung-Kwan Ryu , Kyung-Bae Park , Byung-Wook Yoo
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/4908 , H01L29/78648
摘要： An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

3. 发明授权

US08529802B2 Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition 有权
标题翻译：溶液组成和薄膜形成方法以及使用该溶液组合物制造薄膜晶体管的方法
公开(公告)号：US08529802B2
公开(公告)日：2013-09-10
申请号：US12656682
申请日：2010-02-12
申请人： Jong-Baek Seon , Sang-Yoon Lee , Jeong-il Park , Myung-Kwan Ryu , Kyung-Bae Park
发明人： Jong-Baek Seon , Sang-Yoon Lee , Jeong-il Park , Myung-Kwan Ryu , Kyung-Bae Park
IPC分类号： H01B1/02 , H01B1/06 , H01B1/12 , H01L21/44
CPC分类号： H01L21/02565 , H01L21/02554 , H01L21/02628 , H01L29/7869
摘要： Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
摘要翻译：公开了一种用于形成包含含锌化合物，含铟化合物和包含至少一种选自铪（Hf），镁（Mg），钽（Ta），铈（Ce），镧（La），硅（Si），锗（Ge），钒（V），铌（Nb）和钇（Y）。还公开了通过使用溶液组合物形成薄膜的方法，以及制造包括该薄膜的薄膜晶体管的制造方法。

4. 发明申请

US20110227064A1 Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors 有权
标题翻译：薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的半导体器件
公开(公告)号：US20110227064A1
公开(公告)日：2011-09-22
申请号：US13064366
申请日：2011-03-22
申请人： Kyung-Bae Park , Myung-Kwan Ryu , Jong-Baek Seon , Sang-Yoon Lee , Bon-Won Koo
发明人： Kyung-Bae Park , Myung-Kwan Ryu , Jong-Baek Seon , Sang-Yoon Lee , Bon-Won Koo
IPC分类号： H01L29/12 , H01L21/04
CPC分类号： H01L29/7869 , H01L29/4908
摘要： Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.
摘要翻译：薄膜晶体管，包括设置在漏电极和源电极之间的半导体沟道; 以及栅极绝缘层，其设置在所述半导体沟道和栅电极之间，其中所述半导体沟道包括第一金属氧化物，所述栅极绝缘层包括第二金属氧化物，并且所述第二金属氧化物的至少一种金属至少与第一金属氧化物的一种金属，薄膜晶体管的制造方法以及包括薄膜晶体管的半导体器件。

5. 发明申请

US20100210069A1 Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition 有权
标题翻译：溶液组成和薄膜形成方法以及使用该溶液组合物制造薄膜晶体管的方法
公开(公告)号：US20100210069A1
公开(公告)日：2010-08-19
申请号：US12656682
申请日：2010-02-12
申请人： Jong-Baek Seon , Sang-Yoon Lee , Jeong-il Park , Myung-Kwan Ryu , Kyung-Bae Park
发明人： Jong-Baek Seon , Sang-Yoon Lee , Jeong-il Park , Myung-Kwan Ryu , Kyung-Bae Park
IPC分类号： H01L21/36 , H01B1/02 , H01B1/22
CPC分类号： H01L21/02565 , H01L21/02554 , H01L21/02628 , H01L29/7869
摘要： Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
摘要翻译：公开了一种用于形成包含含锌化合物，含铟化合物和包含至少一种选自铪（Hf），镁（Mg），钽（Ta），铈（Ce），镧（La），硅（Si），锗（Ge），钒（V），铌（Nb）和钇（Y）。还公开了通过使用溶液组合物形成薄膜的方法，以及制造包括该薄膜的薄膜晶体管的制造方法。

6. 发明授权

US07737435B2 Organic semiconductor composition comprising oligomer compounds, composition for patterning organic semiconductor layer comprising the same, organic semiconductor thin film using the same and organic electronic device employing the thin film 有权
标题翻译：包含低聚物化合物的有机半导体组合物，包含该有机半导体层的有机半导体层的组合物，使用该有机半导体组合物的有机半导体薄膜和使用该薄膜的有机电子器件
公开(公告)号：US07737435B2
公开(公告)日：2010-06-15
申请号：US11706985
申请日：2007-02-16
申请人： Jung Seok Hahn , Tae-Sang Kim , Bang-Lin Lee , Sang-Yoon Lee , Eun Kyung Lee
发明人： Jung Seok Hahn , Tae-Sang Kim , Bang-Lin Lee , Sang-Yoon Lee , Eun Kyung Lee
IPC分类号： H01L51/30
CPC分类号： C08L65/00 , H01L51/0036 , H01L51/0043 , H01L51/0097 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Example embodiments pertain to an organic semiconductor composition, in which low-molecular-weight oligomer compounds are distributed in the spaces of a polymer compound so that the free spaces of the organic semiconductor polymer compound are filled with the low-molecular-weight oligomer compounds upon the formation of an organic semiconductor thin film, thereby increasing π-π stacking effects, and to an organic semiconductor thin film using the same and an organic electronic device employing the thin film. Using the organic semiconductor composition according to example embodiments, a semiconductor thin film and an organic electronic device having improved electrical properties may be manufactured.
摘要翻译：示例性实施方案涉及有机半导体组合物，其中低分子量低聚物化合物分布在高分子化合物的空间中，使得有机半导体聚合物化合物的自由空间填充有低分子量低聚物化合物有机半导体薄膜的形成，从而增加了＆pgr; 堆叠效应，以及使用该有机半导体薄膜的有机半导体薄膜和使用薄膜的有机电子器件。使用根据示例性实施方案的有机半导体组合物，可以制造具有改善的电性能的半导体薄膜和有机电子器件。

7. 发明申请

US20080070343A1 Methods for forming an organic thin film using solvent effects, organic thin film formed by the method, and organic electronic device comprising organic thin film 审中-公开
标题翻译：使用溶剂作用形成有机薄膜的方法，通过该方法形成的有机薄膜和包含有机薄膜的有机电子器件
公开(公告)号：US20080070343A1
公开(公告)日：2008-03-20
申请号：US11730317
申请日：2007-03-30
申请人： Jung Seok Hahn , Bang-Lin Lee , Tae-Sang Kim , Sang-Yoon Lee , Hyun Sik Moon
发明人： Jung Seok Hahn , Bang-Lin Lee , Tae-Sang Kim , Sang-Yoon Lee , Hyun Sik Moon
IPC分类号： H01L51/00
CPC分类号： H01L51/0007 , H01L51/0026 , H01L51/0558 , Y02E10/549
摘要： Disclosed is a method for forming an organic thin film using a good solvent and a non-solvent to promote crystallization of an organic material. The method may enable the formation of a dense, uniform, highly ordered organic thin film by a wet process in a simple and an economical manner. Therefore, the organic thin film may be used as a gate insulating layer or a semiconductor layer to fabricate an organic electronic device having improved electrical properties, e.g., increased charge carrier mobility. Further disclosed are an organic thin film formed by the method and an organic electronic device including the organic thin film.
摘要翻译：公开了使用良溶剂和非溶剂形成有机薄膜促进有机材料结晶的方法。该方法可以以简单且经济的方式通过湿法形成密集，均匀的高度有序的有机薄膜。因此，有机薄膜可以用作栅极绝缘层或半导体层，以制造具有改善的电性能（例如增加的电荷载流子迁移率）的有机电子器件。还公开了通过该方法形成的有机薄膜和包括有机薄膜的有机电子器件。

8. 发明授权

US6107760A Non-stop variable AC motor 失效
标题翻译：不间断变量交流电机
公开(公告)号：US6107760A
公开(公告)日：2000-08-22
申请号：US45712
申请日：1998-03-23
申请人： Sang-Yoon Lee
发明人： Sang-Yoon Lee
IPC分类号： H02K29/14 , H02K11/00 , H02K11/04 , H02P6/06 , H02P5/00
CPC分类号： H02K11/33 , H02K11/21
摘要： As stated earlier, the technical purpose of the present invention is to solve inconvenience in use and installation of the AC motor with a controller, and to provide the AC motor available for mass production at a low cost by installing an airtight and compact controller within the case of the AC motor and by setting the sensing wheel in one part of the driving shaft making it possible for the rotative speed primary means integrated to the said controller to sense the driving speed.
摘要翻译：如前所述，本发明的技术目的是解决使用和安装具有控制器的交流电动机的不便之处，并且通过将气密和紧凑的控制器安装在内部，以便以低成本提供可用于批量生产的交流电动机 AC电机的情况，并且通过将感测轮设置在驱动轴的一部分中，使得与所述控制器集成的旋转速度主要装置可以感测驱动速度。

9. 发明授权

US09608225B2 Light emitting device and method of fabricating the same 有权
公开(公告)号：US09608225B2
公开(公告)日：2017-03-28
申请号：US12656225
申请日：2010-01-21
申请人： Do-Hwan Kim , Sang-Yoon Lee , Kwanghee Lee , Sung Heum Park , Shinuk Cho , Jae-Kwan Lee , Alan J. Heeger
发明人： Do-Hwan Kim , Sang-Yoon Lee , Kwanghee Lee , Sung Heum Park , Shinuk Cho , Jae-Kwan Lee , Alan J. Heeger
IPC分类号： H01L51/52 , H01L51/56 , H01L51/50 , H01L27/32
CPC分类号： H01L51/5036 , H01L27/3209 , H01L51/50 , H01L51/5048 , H01L51/5203 , H01L51/56
摘要： A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process.

10. 发明授权

US09218050B2 Method and device for transmitting/receiving image data at high speed 有权
标题翻译：用于高速发送/接收图像数据的方法和装置
公开(公告)号：US09218050B2
公开(公告)日：2015-12-22
申请号：US13824713
申请日：2011-09-28
申请人： Min-Gu Kang , Ja-Chul Ku , Sang-Yoon Lee , Ssang-Gun Lim
发明人： Min-Gu Kang , Ja-Chul Ku , Sang-Yoon Lee , Ssang-Gun Lim
IPC分类号： G06F3/00 , G06T1/60 , H04N5/765
CPC分类号： G06F3/005 , G06T1/60 , H04N5/765
摘要： Provided are a method of transmitting and receiving image data with high speed, which includes sequentially transmitting image data output from an image sensor through one or more transmission channels with a speed corresponding to a bandwidth of the transmission channels, and sequentially recording image data received through one or more transmission channels in a frame store with a speed corresponding to a total bandwidth obtained by summing bandwidths of the respective one or more transmission channels, and an apparatus for implementing the method.
摘要翻译：提供了一种以高速发送和接收图像数据的方法，其包括以与传输信道的带宽相对应的速度通过一个或多个传输信道顺序地发送从图像传感器输出的图像数据，并且顺序地记录通过帧存储器中的一个或多个传输信道具有对应于通过对相应的一个或多个传输信道的带宽求和而获得的总带宽的速度，以及用于实现该方法的装置。

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