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1. 发明授权

US06264709B1 Method for making electrical and electronic devices with vertically integrated and interconnected thin-film type battery 失效
标题翻译：制造具有垂直整合和互连的薄膜型电池的电气和电子设备的方法
公开(公告)号：US06264709B1
公开(公告)日：2001-07-24
申请号：US09296198
申请日：1999-04-21
申请人： Young Soo Yoon , Hyung Jin Jung , Won Kook Choi , Seok Jin Yoon
发明人： Young Soo Yoon , Hyung Jin Jung , Won Kook Choi , Seok Jin Yoon
IPC分类号： H01M618
CPC分类号： H01M10/425 , H01M6/40 , H01M10/0436 , Y10T29/49108 , Y10T29/49115
摘要： An electrical or electronic device and a thin-film type battery are vertically integrated and interconnected for reducing the area occupied thereby, enabling a higher degree of device integration and simplifying their fabrication. An insulating layer is formed on the device, with vertical conductors extending respectively from a pair of terminals of the device through the insulating layer. Electrode conductors are formed on the insulating layer in contact with the respective vertical conductors and serve as the cathode and anode electrodes of a thin-film battery fabricated thereon.
摘要翻译：电气或电子设备和薄膜型电池被垂直整合和互连以减少由此占据的面积，从而能够实现更高程度的器件集成并简化其制造。在器件上形成绝缘层，垂直导体分别从器件的一对端子延伸穿过绝缘层。电极导体形成在与各个垂直导体接触的绝缘层上，并且用作在其上制造的薄膜电池的阴极和阳极电极。

2. 发明授权

US06358378B2 Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor 失效
标题翻译：制造室温紫外检测和发射源的ZnO薄膜的方法及其设备
公开(公告)号：US06358378B2
公开(公告)日：2002-03-19
申请号：US09767822
申请日：2001-01-24
申请人： Won Kook Choi , Hyung Jin Jung , Kyeong Kook Kim , Young Soo Yoon , Jong Han Song
发明人： Won Kook Choi , Hyung Jin Jung , Kyeong Kook Kim , Young Soo Yoon , Jong Han Song
IPC分类号： C23C1434
CPC分类号： C23C14/34 , C23C14/0047 , C23C14/086 , C30B23/02 , C30B29/16
摘要： An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O2) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
摘要翻译：制造仅NBE的高质量ZnO薄膜并且在室温下没有任何深层次发射以代替常规III-V族化合物如GaN的经济方法及其设备。该方法包括以下步骤：将真空室中的氩（Ar）和氧（O 2）引入真空室中，同时在真空室中保持真空度为1-100mTorr，预热衬底，通过RF在衬底上沉积ZnO单晶薄膜同时从安装在基板上的原子源引入碳（C）或氮（N）原子，同时在沉积ZnO的同时保持真空室中的氧分压保持分压，同时缓慢冷却基板薄膜。

3. 发明授权

US07178584B2 Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning 有权
标题翻译：用于制冷和空调的金属表面的等离子体聚合增强
公开(公告)号：US07178584B2
公开(公告)日：2007-02-20
申请号：US10952904
申请日：2004-09-30
申请人： Seok-Keun Koh , Hyung Jin Jung , Won Kook Choi , Byung Ha Kang , Ki Hwan Kim , Sam Chul Ha , Cheol Hwan Kim , Sung-Chang Choi
发明人： Seok-Keun Koh , Hyung Jin Jung , Won Kook Choi , Byung Ha Kang , Ki Hwan Kim , Sam Chul Ha , Cheol Hwan Kim , Sung-Chang Choi
IPC分类号： F28F13/18
CPC分类号： C23C16/503 , B05D1/62 , B05D3/148 , B05D5/083 , C23C16/30 , C23C16/50 , C23C16/515 , C23C16/56 , F25B47/003 , F28F13/18 , F28F2245/02 , F28F2245/04
摘要： According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition, and there is also provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using an RF plasma.
摘要翻译：根据本发明，通过使用DC放电等离子体，提供了一种金属的等离子体聚合表面改性，用于增强其在制冷和空调中的应用，例如构建热交换，其包括以下步骤：（a）将基本上要被表面改性的金属的阳极电极和阴极电极放置在室中，（b）将室内的压力保持在预定的真空度，（c）吹送由不饱和脂族烃组成的反应气体单体气体或含氟单体和预定压力的含硅单体气体和以预定压力进入室的非可聚合气体，以及（d）向电极施加电压以获得DC放电，从而获得由不饱和脂肪烃单体气体和不可聚合气体产生的正离子和负离子和自由基组成的等离子体，然后通过等离子体沉积在阳极电极的表面上形成具有亲水性或疏水性的聚合物，并且还提供金属的等离子体聚合表面改性以增强其用于制冷和空调的适用性，例如构建热交换，通过使用RF等离子体。

4. 发明授权

US06319326B1 Apparatus for surface modification of polymer, metal and ceramic materials using ion beam 失效
标题翻译：使用离子束对聚合物，金属和陶瓷材料进行表面改性的设备
公开(公告)号：US06319326B1
公开(公告)日：2001-11-20
申请号：US09555832
申请日：2000-08-07
申请人： Seok-Keun Koh , Hyung Jin Jung , Won Kook Choi , Jung Cho
发明人： Seok-Keun Koh , Hyung Jin Jung , Won Kook Choi , Jung Cho
IPC分类号： C23C1600
CPC分类号： H01J37/3277 , C23C16/4417 , C23C16/486 , D06B19/00 , H01J37/317 , H01J2237/338
摘要： An apparatus for surface modification of a polymer, metal, and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (220) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated is differentiated from that in a portion in which the ion beam is generated, and both-side irradiating processing and continuous processing is applicable.
摘要翻译：公开了一种使用离子束（IB）对聚合物，金属和陶瓷材料进行表面改性的装置，其能够提供和控制施加到待表面改性的材料上的电压（220），使得离子束（IB）照射到材料的能量时，照射离子束的真空室的一部分中的反应气体的真空度与生成离子束的部分的反应气体的真空度不同，适用于双面照射处理和连续处理。

5. 发明授权

US08030237B2 Dielectric thin film composition showing linear dielectric properties 有权
标题翻译：显示线性介电性能的介电薄膜组合物
公开(公告)号：US08030237B2
公开(公告)日：2011-10-04
申请号：US12537198
申请日：2009-08-06
申请人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
发明人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
IPC分类号： C04B35/468 , C04B35/47
CPC分类号： H01B3/12 , C04B35/4682 , C04B35/47 , C04B2235/3213 , C04B2235/3215 , C04B2235/3293
摘要： The present invention relates to a dielectric thin film composition showing linear dielectric properties, in which tin oxides (SnO2) are introduced into a (Ba,Sr)TiO3 (BSTO) dielectric thin film in a continuous diffusion gradient manner in composition. Since the non-linear dielectric properties of BSTO are converted to linear dielectric properties by the addition of SnO2 according to the present invention, the dielectric thin film composition of the present invention is characterized in that: there is little change in the capacitance according to the applied electric field; it has a high dielectric constant capable of showing a desired capacitance even at a thickness suitable for preventing the occurrence of electron tunneling; and it exhibits paraelectric properties similar to the conventional dielectric substances such as SiO2 while having a very low dielectric loss.
摘要翻译：本发明涉及一种电介质薄膜组合物，其表现出线性介电性质，其中在组成中以连续扩散梯度方式将锡氧化物（SnO 2）引入到（Ba，Sr）TiO 3（BSTO）电介质薄膜中。由于根据本发明通过添加SnO 2将BSTO的非线性介电性能转化为线性介电特性，所以本发明的电介质薄膜组合物的特征在于：根据应用电场; 即使在适合于防止电子隧道发生的厚度的情况下，也具有能够显示所需电容的高介电常数; 并且具有类似于常规电介质物质如SiO 2的同电性能，同时具有非常低的介电损耗。

6. 发明申请

US20100035749A1 Dielectric Thin Film Composition Showing Linear Dielectric Properties 有权
标题翻译：显示线性介电性能的介电薄膜组成
公开(公告)号：US20100035749A1
公开(公告)日：2010-02-11
申请号：US12537198
申请日：2009-08-06
申请人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
发明人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
IPC分类号： C04B35/457
CPC分类号： H01B3/12 , C04B35/4682 , C04B35/47 , C04B2235/3213 , C04B2235/3215 , C04B2235/3293
摘要： The present invention relates to a dielectric thin film composition showing linear dielectric properties, in which tin oxides (SnO2) are introduced into a (Ba,Sr)TiO3 (BSTO) dielectric thin film in a continuous diffusion gradient manner in composition. Since the non-linear dielectric properties of BSTO are converted to linear dielectric properties by the addition of SnO2 according to the present invention, the dielectric thin film composition of the present invention is characterized in that: there is little change in the capacitance according to the applied electric field; it has a high dielectric constant capable of showing a desired capacitance even at a thickness suitable for preventing the occurrence of electron tunneling; and it exhibits paraelectric properties similar to the conventional dielectric substances such as SiO2 while having a very low dielectric loss.
摘要翻译：本发明涉及一种电介质薄膜组合物，其表现出线性介电性质，其中在组成中以连续扩散梯度方式将锡氧化物（SnO 2）引入到（Ba，Sr）TiO 3（BSTO）电介质薄膜中。由于根据本发明通过添加SnO 2将BSTO的非线性介电性能转化为线性介电特性，所以本发明的电介质薄膜组合物的特征在于：根据应用电场; 即使在适合于防止电子隧道发生的厚度的情况下，也具有能够显示所需电容的高介电常数; 并且具有类似于常规电介质物质如SiO 2的同电性能，同时具有非常低的介电损耗。

7. 发明申请

US20120211355A1 TRANSPARENT CONDUCTIVE COMPOSITION, TARGET, TRANSPARENT CONDUCTIVE THIN FILM USING THE TARGET AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：透明导电组合物，目标，使用目标的透明导电薄膜及其制造方法
公开(公告)号：US20120211355A1
公开(公告)日：2012-08-23
申请号：US13084150
申请日：2011-04-11
申请人： Ji Won CHOI , Seok Jin Yoon , Won Kook Choi , Jin Sang Kim , Chong Yun Kang , Ho Won Jang , Keun Jung
发明人： Ji Won CHOI , Seok Jin Yoon , Won Kook Choi , Jin Sang Kim , Chong Yun Kang , Ho Won Jang , Keun Jung
IPC分类号： C23C14/06 , C23C14/34 , H01B1/02
CPC分类号： C23C14/086 , C23C14/08 , C23C14/3414 , H01B1/08
摘要： Disclosed are a transparent conductive composition including a material of the following formula, a target, a transparent conductive thin film using the target, and a method for fabricating the same. The disclosed transparent conductive composition and transparent conductive thin film have superior conductivity (low resistivity) and high light transmittance. Especially, they may be usefully applied for the flexible electronic devices, which may be called the core of the future display industry, because they have low resistivity of not greater than 10−3 Ω·cm and a high light transmittance of at least 90% even when deposition is carried out at room temperature. AlxZn1-xO In the above formula, x is within the range of 0.04≦x≦0.063.
摘要翻译：公开了一种透明导电组合物及其制造方法，该导电组合物包括下式的材料，靶材，使用该靶材的透明导电薄膜。所公开的透明导电组合物和透明导电薄膜具有优异的导电性（低电阻率）和高透光率。特别地，它们可以有用地应用于柔性电子器件，这可能被称为未来显示器行业的核心，因为它们具有不大于10-3＆OHgr·cm的低电阻率和至少90的高透光率即使在室温下进行沉积也是如此。 AlxZn1-xO在上式中，x在0.04＆nlE; x＆nlE; 0.063的范围内。

8. 发明授权

US06300641B1 Process for modifying surfaces of materials, and materials having surfaces modified thereby 有权
标题翻译：用于改变材料表面的方法和具有由其修饰的表面的材料
公开(公告)号：US06300641B1
公开(公告)日：2001-10-09
申请号：US09149442
申请日：1998-09-09
申请人： Seok Keun Koh , Hyung Jin Jung , Won Kook Choi , Kyong Sop Han , Sik Sang Gam
发明人： Seok Keun Koh , Hyung Jin Jung , Won Kook Choi , Kyong Sop Han , Sik Sang Gam
IPC分类号： B05D306
CPC分类号： C04B41/009 , B29C59/16 , B29C2035/0872 , B29C2791/006 , C03C17/23 , C03C23/0055 , C03C23/006 , C03C2217/211 , C03C2217/215 , C03C2217/23 , C03C2218/32 , C04B41/0027 , C04B41/80 , C08J7/12 , C04B41/0072 , C04B41/53 , C04B35/10 , C04B35/48
摘要： A process for modifying the surfaces of a polymer, ceramic, ITO or glass by irradiating energized ion particles onto the surfaces of the polymer, ceramic, ITO or glass, while blowing a reactive gas directly over the surface of the polymer, ceramic, ITO or glass under a vacuum condition, to decrease the wetting angle of the surface. The process can be widely used in the fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the material surface.
摘要翻译：通过在聚合物，陶瓷，ITO或玻璃的表面上照射赋能的离子粒子，同时将反应性气体直接吹到聚合物，陶瓷，ITO或其表面上，来改性聚合物，陶瓷，ITO或玻璃的表面的方法玻璃在真空条件下，以减少表面的润湿角度。该方法可以广泛用于聚合物领域，因为它提供了增加水性染料的铺展性，增加与其它材料的粘合强度以及通过降低材料表面的润湿角抑制光散射的效果。

9. 发明授权

US6162513A Method for modifying metal surface 失效
标题翻译：金属表面改性方法
公开(公告)号：US6162513A
公开(公告)日：2000-12-19
申请号：US806675
申请日：1997-02-26
申请人： Seok Keun Koh , Hyung Jin Jung , Won Kook Choi , Byung Ha Kang
发明人： Seok Keun Koh , Hyung Jin Jung , Won Kook Choi , Byung Ha Kang
IPC分类号： C23C8/36 , C23C8/38 , B05D3/06 , C23C8/02
CPC分类号： C23C8/36 , C23C8/38
摘要： A process for modifying a metal surface by irradiating energized ion particles onto a metal surface while blowing a reactive gas directly on the metal surface under a vacuum condition. The process can achieve the effect of decreasing the wetting angle of the polymer or metal surface and enhancing the strength and the surface energy of the metal.
摘要翻译：一种通过在金属表面上照射带电离子粒子同时在真空条件下直接在金属表面上吹送反应性气体来修饰金属表面的方法。该方法可以实现降低聚合物或金属表面的润湿角度并提高金属的强度和表面能的作用。

10. 发明授权

US5989990A Tinoxide thin film, preparation thereof, and gas detecting sensor using thereof 失效
标题翻译：氧化锡薄膜，其制备方法和使用其的气体检测传感器
公开(公告)号：US5989990A
公开(公告)日：1999-11-23
申请号：US599989
申请日：1996-02-14
申请人： Seok Keun Koh , Hyung Jin Jung , Seok Kyun Song , Won Kook Choi , Dongsoo Choi , Jin Seok Jeon
发明人： Seok Keun Koh , Hyung Jin Jung , Seok Kyun Song , Won Kook Choi , Dongsoo Choi , Jin Seok Jeon
IPC分类号： C23C14/00 , C23C14/08 , C23C14/22 , G01N27/12 , C23C14/32
CPC分类号： C23C14/221 , C23C14/0031 , C23C14/086 , G01N27/12
摘要： The present invention relates to tinoxide thin film, a process for manufacturing thereof comprising the step of depositing tin while providing oxygen or ionized oxygen around a substrate, and relates to a gas detecting sensor prepared by the use of such tinoxide thin film.
摘要翻译：本发明涉及一种氧化锡薄膜及其制造方法，包括在基板周围提供氧或电离氧的同时沉积锡的步骤，以及通过使用这种氧化锡薄膜制备的气体检测传感器。

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