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    • 3. 发明授权
    • Method for tunnel junction sensor with magnetic cladding
    • 具有磁性包层的隧道结传感器的方法
    • US07444738B2
    • 2008-11-04
    • US11192517
    • 2005-07-29
    • Young Sir ChungRobert W. BairdGregory W. Grynkewich
    • Young Sir ChungRobert W. BairdGregory W. Grynkewich
    • G11B5/127G11B5/33
    • G01R33/06H01L43/12Y10T29/49032Y10T29/49034Y10T29/49036Y10T29/49039Y10T29/49041Y10T29/49043Y10T29/49044
    • Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic shield is provided at least on a face of the MFS away from the MTJ. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic region has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
    • 提供了用于感测物理参数的方法和装置。 该装置包括磁隧道结(MTJ)和磁场源,其磁场与MTJ重叠,并且其与MTJ的接近度响应于对传感器的输入而变化。 至少在远离MTJ的MFS的面上设有磁屏蔽。 MTJ包括由电介质隔开的第一和第二磁极,其被配置为允许它们之间的显着的隧穿传导。 第一磁性区域的自旋轴被固定,第二磁极的自由轴自由。 磁场源比第一磁极更靠近第二磁极。 通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。
    • 4. 发明授权
    • MRAM embedded smart power integrated circuits
    • MRAM嵌入式智能电源集成电路
    • US07324369B2
    • 2008-01-29
    • US11170874
    • 2005-06-30
    • Young Sir ChungRobert W. BairdMark A. DurlamGregory W. GrynkewichEric J. Salter
    • Young Sir ChungRobert W. BairdMark A. DurlamGregory W. GrynkewichEric J. Salter
    • G11C11/00
    • G11C11/1659H01F10/3254
    • An integrated circuit device includes a magnetic random access memory (“MRAM”) architecture and a smart power integrated circuit architecture formed on the same substrate using the same fabrication process technology. The fabrication process technology is a modular process having a front end process and a back end process. In the example embodiment, the smart power architecture includes a power circuit component, a digital logic component, and an analog control component formed by the front end process, and a sensor architecture formed by the back end process. The MRAM architecture includes an MRAM circuit component formed by the front end process and an MRAM cell array formed by the back end process. In one practical embodiment, the sensor architecture includes a sensor component that is formed from the same magnetic tunnel junction core material utilized by the MRAM cell array. The concurrent fabrication of the MRAM architecture and the smart power architecture facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.
    • 集成电路装置包括使用相同的制造工艺技术在同一衬底上形成的磁性随机存取存储器(“MRAM”)架构和智能电力集成电路架构。 制造工艺技术是具有前端工艺和后端工艺的模块化工艺。 在该示例性实施例中,智能功率架构包括由前端处理形成的电源电路部件,数字逻辑部件和模拟控制部件以及由后端处理形成的传感器架构。 MRAM架构包括由前端处理形成的MRAM电路部件和由后端处理形成的MRAM单元阵列。 在一个实际实施例中,传感器架构包括由MRAM单元阵列使用的相同的磁性隧道结芯体材料形成的传感器部件。 MRAM架构和智能电源架构的并行制造有助于在衬底的有源电路块上可用的物理空间的有效和成本有效的使用,导致三维集成。
    • 7. 发明授权
    • Sensor with magnetic tunnel junction and moveable magnetic field source
    • 传感器具有磁性隧道结和可动磁场源
    • US07414396B2
    • 2008-08-19
    • US11192802
    • 2005-07-29
    • Young Sir ChungRobert W. Baird
    • Young Sir ChungRobert W. Baird
    • G01R33/02
    • G01R33/06B82Y25/00G01R33/093G01R33/098
    • Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic shield is provided at least on a face of the MFS away from the MTJ. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic region has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
    • 提供了用于感测物理参数的方法和装置。 该装置包括磁隧道结(MTJ)和磁场源,其磁场与MTJ重叠,并且其与MTJ的接近度响应于对传感器的输入而变化。 至少在远离MTJ的MFS的面上设有磁屏蔽。 MTJ包括由电介质隔开的第一和第二磁极,其被配置为允许它们之间的显着的隧穿传导。 第一磁性区域的自旋轴被固定,第二磁极的自由轴自由。 磁场源比第一磁极更靠近第二磁极。 通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。