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1. 发明申请

US20060275254A1 Pharmaceutical composition comprising an immunoglobulin fc region as a carrier 有权
标题翻译：药物组合物，其包含免疫球蛋白fc区域作为载体
公开(公告)号：US20060275254A1
公开(公告)日：2006-12-07
申请号：US10535231
申请日：2004-11-13
申请人： Young Kim , Dae Song , Sung Jung , Chang Kim , In Choi , Se Kwon , Gwan Lee
发明人： Young Kim , Dae Song , Sung Jung , Chang Kim , In Choi , Se Kwon , Gwan Lee
IPC分类号： A61K39/395 , C07K16/46 , A61K38/19 , A61K38/21
CPC分类号： A61K47/68 , A61K47/6811 , A61K47/6813 , A61K47/6835 , C07K14/505 , C07K14/535 , C07K14/56 , C07K14/61 , C07K16/46 , C07K19/00 , C07K2317/52 , C07K2317/732 , C07K2317/734 , C07K2319/30
摘要： Disclosed is a novel use of an immunoglobulin Fe fragment, and more particularly, a pharmaceutical composition comprising an immunoglobulin Fe fragment as a carrier. The pharmaceutical composition comprising an immunoglobulin Fe fragment as a carrier remarkably extends the serum half-life of a drug while maintaining the in vivo activity of the drug at relatively high levels. Also, when the drug is a polypeptide drug, the pharmaceutical composition has less risk of inducing immune responses compared to a fusion protein of the immunoglobulin Fe fragment and a target protein, and is thus useful for developing long-acting formulations of various polypeptide drugs.
摘要翻译：公开了免疫球蛋白Fe片段的新用途，更具体地，涉及包含免疫球蛋白Fe片段作为载体的药物组合物。包含作为载体的免疫球蛋白Fe片段的药物组合物显着延长了药物的血清半衰期，同时保持药物的体内活性在相对较高的水平。此外，当药物是多肽药物时，与免疫球蛋白Fe片段和靶蛋白质的融合蛋白相比，药物组合物具有较少的诱导免疫应答的风险，因此可用于开发各种多肽药物的长效制剂。

2. 发明申请

US20070041967A1 Igg fc fragment for a drug carrier and method for the preparation thereof 有权
标题翻译：用于药物载体的Igg fc片段及其制备方法
公开(公告)号：US20070041967A1
公开(公告)日：2007-02-22
申请号：US10535341
申请日：2004-11-13
申请人： Sung Jung , Jin Kim , Geun Yang , Se Kwon , Gwan Lee
发明人： Sung Jung , Jin Kim , Geun Yang , Se Kwon , Gwan Lee
IPC分类号： A61K39/395 , C12P21/08 , C07K16/18 , C12N5/06
CPC分类号： A61K47/68 , A61K47/6811 , A61K47/6813 , A61K47/6835 , C07K14/505 , C07K14/535 , C07K14/56 , C07K14/61 , C07K16/46 , C07K19/00 , C07K2317/52 , C07K2317/732 , C07K2317/734 , C07K2319/30
摘要： Disclosed is an IgG Fc fragment useful as a drug carrier. Also, the present invention discloses a recombinant vector expressing the IgG Fc fragment, a transformant transformed with the recombinant vector, and a method of preparing an IgG Fc fragment, comprising culturing the transformant. When conjugated to a certain drug, the IgG Fc fragment improves the in vivo duration of action of the drug and minimizes the in vivo activity reduction of the drug.
摘要翻译：公开了可用作药物载体的IgG Fc片段。此外，本发明公开了表达IgG Fc片段的重组载体，用重组载体转化的转化体，以及制备IgG Fc片段的方法，包括培养转化体。当缀合到某种药物时，IgG Fc片段改善了药物作用的体内持续时间并使药物的体内活性降低最小化。

3. 发明申请

US20060276633A1 Method for the mass production of immunoglobulin constant region 有权
标题翻译：大量生产免疫球蛋白恒定区的方法
公开(公告)号：US20060276633A1
公开(公告)日：2006-12-07
申请号：US10535312
申请日：2004-11-13
申请人： Sung Jung , Jin Kim , Young Park , Ki-Doo Choi , Se Kwon , Gwan Lee
发明人： Sung Jung , Jin Kim , Young Park , Ki-Doo Choi , Se Kwon , Gwan Lee
IPC分类号： C07K16/18 , C07H21/04 , C12P21/06 , A61K39/395 , C12N15/74 , C12N1/21
CPC分类号： A61K47/68 , A61K47/6811 , A61K47/6813 , A61K47/6835 , C07K14/505 , C07K14/535 , C07K14/56 , C07K14/61 , C07K16/46 , C07K19/00 , C07K2317/52 , C07K2317/732 , C07K2317/734 , C07K2319/30
摘要： Disclosed are a recombinant expression vector comprising a nucleotide sequence encoding an E. coli-derived signal sequence and a nucleotide sequence encoding an immunoglobulin constant region, and a transformant transformed with the expression vector. Also, disclosed is a method of mass-producing an immunoglobulin constant region by culturing the transformant and expressing the immunoglobulin constant region in a water-soluble form.
摘要翻译：公开了包含编码大肠杆菌来源的信号序列的核苷酸序列和编码免疫球蛋白恒定区的核苷酸序列的重组表达载体和用表达载体转化的转化体。此外，公开了通过培养转化体并以水溶性形式表达免疫球蛋白恒定区来大规模生产免疫球蛋白恒定区的方法。

4. 发明申请

US20050075507A1 1,2,4-Triazole derivative, method for preparing the same, and pharmaceutical composition containing the same 失效
标题翻译： 1,2,4-三唑衍生物，其制备方法和含有该混合物的药物组合物
公开(公告)号：US20050075507A1
公开(公告)日：2005-04-07
申请号：US10608709
申请日：2003-06-27
申请人： Il Cho , Hyun Park , Ji Noh , Hyung Ryu , Sang Park , Sung Jung , Sung Lee , Jong Kim , Jee Lim , Chun Lyu , Dal Kim , Young Kim , Kyu Yeon , Myeong Chae , In Min , Hae Jin , Kyoung Kang
发明人： Il Cho , Hyun Park , Ji Noh , Hyung Ryu , Sang Park , Sung Jung , Sung Lee , Jong Kim , Jee Lim , Chun Lyu , Dal Kim , Young Kim , Kyu Yeon , Myeong Chae , In Min , Hae Jin , Kyoung Kang
IPC分类号： C07D249/10 , A61P29/00 , C07D249/08 , C07D401/04 , C07D403/04 , C07D405/04
CPC分类号： C07D249/08 , C07C311/39 , C07C323/36 , C07D213/77 , C07D237/20 , C07D401/04 , C07D403/04 , C07D405/04
摘要： A 1,2,4-Triazole derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided.
摘要翻译：提供式1的1,2,4-三唑衍生物或其无毒盐，其制备方法和含有该衍生物或盐作为有效成分的药物组合物。

5. 发明申请

US20070097306A1 Liquid crystal display device and method of manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20070097306A1
公开(公告)日：2007-05-03
申请号：US11472022
申请日：2006-06-20
申请人： Sung Jung , Young Lee , Young Kim , Jong Park
发明人： Sung Jung , Young Lee , Young Kim , Jong Park
IPC分类号： G02F1/1343
CPC分类号： G02F1/1345 , G02F2001/133388 , G02F2201/121
摘要： An LCD and a method of manufacturing the same are provided. The LCD includes first and second substrates defined by a display region and a non-display region, and spaced a predetermined interval apart from each other. The LCD further comprises a liquid crystal layer interposed between the first and second substrates, a conductive part formed on at least one side of the first substrate corresponding to the non-display region. The conductive part has a first dummy pattern formed of metal identical to that of a gate line in the display region. The LCD then comprises a common electrode formed on the second substrate, and a conductive thread pattern that electrically connects the common electrode and the conductive part, and attaches the first and second substrates.
摘要翻译：提供LCD及其制造方法。 LCD包括由显示区域和非显示区域限定的第一和第二基板，并且彼此隔开预定间隔。液晶显示装置还包括介于第一和第二基板之间的液晶层，形成在对应于非显示区域的第一基板的至少一侧上的导电部分。导电部件具有由与显示区域中的栅极线相同的金属形成的第一虚设图案。然后，LCD包括形成在第二基板上的公共电极和电连接公共电极和导电部分并且连接第一和第二基板的导电线图案。

6. 发明申请

US20060074118A1 1, 2, 4 - Triazole derivatives, processes for the preparation thereof, and pharmaceutical compositions containing the same 失效
标题翻译： 1,2,4-三唑衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US20060074118A1
公开(公告)日：2006-04-06
申请号：US10536408
申请日：2003-11-26
申请人： Il Cho , Dong Ko , Yun Chae , In Min , Young Kim , Kyu Yeon , Jong Kim , Sung Jung , Sang Park , Il Kim , Hyung Ryu , Ji Noh , Hyun Park , Jie Park , Young Chung
发明人： Il Cho , Dong Ko , Yun Chae , In Min , Young Kim , Kyu Yeon , Jong Kim , Sung Jung , Sang Park , Il Kim , Hyung Ryu , Ji Noh , Hyun Park , Jie Park , Young Chung
IPC分类号： A61K31/4196 , C07D249/12
CPC分类号： C07D249/12 , C07D249/10
摘要： A 1,2,4-triazole derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided.
摘要翻译：提供式1的1,2,4-三唑衍生物或其无毒盐，其制备方法和含有该衍生物或盐作为有效成分的药物组合物。

7. 发明申请

US20070131996A1 Non-volatile memory device and fabricating method thereof 失效
公开(公告)号：US20070131996A1
公开(公告)日：2007-06-14
申请号：US11701484
申请日：2007-02-02
申请人： Sung Jung , Jum Kim
发明人： Sung Jung , Jum Kim
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/66833 , H01L29/792
摘要： The present invention provides a non-volatile memory device and fabricating method thereof, by which a cell size can be lowered despite high degree of cell integration and by which the device fabrication is facilitated. The present invention includes at least two trench isolation layers arranged in a device isolation area of a semiconductor substrate, each having a first depth, a first conductive type well arranged between the at least two trench isolation layers to have a second depth smaller than the first depth, a second conductive type source region and a second conductive type drain region arranged in a prescribed upper part of the first conductive type well to be separated from each other by a channel region in-between, an ONO layer on the channel region of the semiconductor substrate, the ONO layer comprising a lower oxide layer, a nitride layer, and an upper oxide layer, and a wordline conductor layer on the ONO layer.

8. 发明申请

US20060228581A1 Iridium-based luminescent compounds having phenylpyridine moieties with organosilicon group, and organic electroluminescence devices using the compounds as color-producing materials 有权
标题翻译：具有苯基吡啶部分的具有有机硅基团的铱基发光化合物和使用该化合物作为生色材料的有机电致发光器件
公开(公告)号：US20060228581A1
公开(公告)日：2006-10-12
申请号：US11240633
申请日：2005-10-03
申请人： Jeong Seo , Chun Park , Soon Kwon , Yun Kim , Sung Jung , Jun Ahn , Hyung Kim
发明人： Jeong Seo , Chun Park , Soon Kwon , Yun Kim , Sung Jung , Jun Ahn , Hyung Kim
IPC分类号： H01L51/54 , H05B33/14 , C09K11/06
CPC分类号： C07F15/0033 , C09K11/06 , C09K2211/1029 , C09K2211/185 , H01L51/0085 , H01L51/0094 , H01L51/5012 , H05B33/14 , Y10S428/917
摘要： Disclosed are iridium-based luminescent compounds having phenylpyridine moieties with an organosilicon group, and organic electroluminescence devices using the compounds as color-producing materials. The luminescent compounds have the structure of Formula 1 below: wherein L1, L2, L3, R1, R2 and R3, which may be identical to or different from each other, are each independently selected from the group consisting of aryl, alkoxy, alkyl, and groups of Formulae 2 and 3 below: wherein D1, D2 and D3 are each independently selected from the group consisting of C1˜18 alkyl, C1˜18 alkoxy, substituted or unsubstituted C1˜18 alkyl and allyl, and substituted or unsubstituted C6˜18 fluorinated alkyl and allyl groups; wherein D4, D5 and D6 are each independently selected from the group consisting of C1˜18 alkyl, C1˜18 alkoxy, substituted or unsubstituted C1˜18 alkyl and allyl, and substituted or unsubstituted C6˜18 fluorinated alkyl and allyl groups.
摘要翻译：公开了具有有机硅基团的苯基吡啶部分的铱系发光化合物和使用该化合物作为生色材料的有机电致发光器件。发光化合物具有以下式1的结构：其中L 1，L 2，L 3，R 1，N 2， R 2，R 3和R 3可以彼此相同或不同，各自独立地选自芳基，烷氧基，烷基和基团下式2和3的化合物：其中D 1，D 2和D 3各自独立地选自C 1 -C 6烷基， 1〜18个烷基，C 1〜18个烷氧基，取代或未取代的C 1-18烷基和烯丙基，以及取代或未取代的C 6〜 18 氟烷基和烯丙基; 其中D 4，D 5和D 6各自独立地选自C 1〜18，烷基，C 1〜18烷氧基，取代或未取代的C 1-18烷基和烯丙基，以及取代或未取代的C 6-18烷氧基烷基和烯丙基。

9. 发明申请

US20050142745A1 Trench isolation method in flash memory device 有权
标题翻译：闪存设备中的沟槽隔离方法
公开(公告)号：US20050142745A1
公开(公告)日：2005-06-30
申请号：US11019302
申请日：2004-12-23
申请人： Sung Jung , Jum Kim
发明人： Sung Jung , Jum Kim
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8247 , H01L27/115 , H01L21/336
CPC分类号： H01L27/11521 , H01L21/76224 , H01L27/115
摘要： The present invention provides a trench isolation method in a flash memory device, by which stability and reliability of the device are enhanced in a manner of forming a pad oxide layer thick in the vicinity of an edge of a trench isolation layer. The present invention includes forming a mask layer pattern on a semiconductor substrate to expose a device isolation area but to cover an active area thereof, the mask layer pattern comprising a first insulating layer pattern and a second insulating layer pattern stacked thereon, forming a trench in the semiconductor substrate corresponding to the device isolation area, removing an exposed portion of the first insulating layer pattern enough to expose a portion of the semiconductor substrate in the active area adjacent to the trench, forming a sidewall oxide layer on an inside of the trench and the exposed portion of the semiconductor substrate, filling up the trench with a third insulating layer to cover the sidewall oxide layer, and removing the mask layer pattern.
摘要翻译：本发明提供了一种闪速存储器件中的沟槽隔离方法，通过这种方法，在沟槽隔离层的边缘附近形成厚的衬垫氧化物层，增强了器件的稳定性和可靠性。本发明包括在半导体衬底上形成掩模层图案以暴露器件隔离区域而覆盖其有效区域，掩模层图案包括第一绝缘层图案和叠置在其上的第二绝缘层图案，形成沟槽所述半导体衬底对应于所述器件隔离区域，去除所述第一绝缘层图案的暴露部分以足以暴露所述半导体衬底在与所述沟槽相邻的有源区域中的一部分，在所述沟槽的内部形成侧壁氧化物层，以及半导体衬底的暴露部分，用第三绝缘层填充沟槽以覆盖侧壁氧化物层，以及去除掩模层图案。

10. 发明申请

US20050139916A1 High voltage semiconductor device and fabricating method thereof 审中-公开
标题翻译：高压半导体器件及其制造方法
公开(公告)号：US20050139916A1
公开(公告)日：2005-06-30
申请号：US11020276
申请日：2004-12-27
申请人： Jum Kim , Sung Jung
发明人： Jum Kim , Sung Jung
IPC分类号： H01L29/78 , H01L29/417 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/41775
摘要： A high voltage semiconductor device and fabricating method thereof, enable a high breakdown voltage to be provided from a surface area without forming a dual spacer layer. The semiconductor device includes a semiconductor substrate having source/drain regions separated from each other by a channel region in-between, a gate insulating layer pattern on the channel region, a gate conductor layer pattern on the gate insulating layer, a sidewall insulating layer provided on a sidewall of the gate conductor layer pattern, a salicide suppress layer pattern covering partial, but not entire, surfaces of the source/drain regions, and covering the sidewall insulating layer, and the gate conductor layer pattern, and a metal salicide layer on remaining portions surfaces of the source/drain regions that are not covered with the salicide suppress layer pattern.
摘要翻译：高压半导体器件及其制造方法能够从表面区域提供高的击穿电压而不形成双间隔层。半导体器件包括具有源极/漏极区域的半导体衬底，沟道区域之间的沟道区域彼此分离，沟道区域上的栅极绝缘层图案，栅极绝缘层上的栅极导体层图案，提供的侧壁绝缘层在栅极导体层图案的侧壁上，覆盖源极/漏极区域的部分但不是整个表面并且覆盖侧壁绝缘层和栅极导体层图案以及金属硅化物层的自对准硅化物抑制层图案未被自对准硅化物抑制层图案覆盖的源/漏区的剩余部分表面。

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