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1. 发明授权

US07324567B2 Modulation frequency tunable optical oscillator 失效
标题翻译：调制频率可调光学振荡器
公开(公告)号：US07324567B2
公开(公告)日：2008-01-29
申请号：US11017654
申请日：2004-12-22
申请人： Young Ho Kim , Eun Soo Nam , Kyoung Ik Cho , Bo Woo Kim , Myung Sook Oh
发明人： Young Ho Kim , Eun Soo Nam , Kyoung Ik Cho , Bo Woo Kim , Myung Sook Oh
IPC分类号： H01S3/30
CPC分类号： H01S3/067 , H01S3/0675 , H01S3/07 , H01S3/0809 , H01S3/082 , H01S3/1055
摘要： Provided is a millimeter-wave band frequency optical oscillator that can be used as an oscillation frequency signal source for a millimeter-wave forwarded to wireless subscribers from a base station of a millimeter-wave wireless subscriber communication system for a next generation (e.g., fifth generation) ultra-high speed wireless internet service. A pair of an optical fiber amplifier and an optical fiber grating mirror is connected to each of input/output ports of a loop mirror in parallel, so that a dual mode laser resonator is formed which can make simultaneous oscillation in two laser modes suitable for each wavelength. Accordingly, it is possible to obtain a light source that is modulated to a ultra-high frequency (over 60 GHz) by a beat phenomenon between the two laser modes.
摘要翻译：提供了一种毫米波段频率光学振荡器，其可以用作从用于下一代的毫米波无线用户通信系统的基站转发到无线用户的毫米波的振荡频率信号源（例如，第五一代）超高速无线互联网服务。一对光纤放大器和光纤光栅反射镜并联连接到环形反射镜的每个输入/输出端口，从而形成双模式激光谐振器，其可以在适合于每个激光模式的两种激光模式中同时振荡波长。因此，可以通过两种激光模式之间的拍子现象来获得被调制到超高频（超过60GHz）的光源。

2. 发明申请

US20060108574A1 Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process 失效
公开(公告)号：US20060108574A1
公开(公告)日：2006-05-25
申请号：US11282339
申请日：2005-11-18
申请人： Eun Soo Nam , Yong Won Kim , Seon Eui Hong , Myung Sook Oh , Bo Woo Kim
发明人： Eun Soo Nam , Yong Won Kim , Seon Eui Hong , Myung Sook Oh , Bo Woo Kim
IPC分类号： H01L29/06 , H01L31/0328
CPC分类号： H01L31/18 , B82Y20/00 , G02F1/017
摘要： Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

3. 发明授权

US07638856B2 Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process 有权
标题翻译：光电发射机集成电路及其制造方法采用选择性生长工艺
公开(公告)号：US07638856B2
公开(公告)日：2009-12-29
申请号：US11872137
申请日：2007-10-15
申请人： Eun Soo Nam , Yong Won Kim , Seon Eui Hong , Myung Sook Oh , Bo Woo Kim
发明人： Eun Soo Nam , Yong Won Kim , Seon Eui Hong , Myung Sook Oh , Bo Woo Kim
IPC分类号： H01L29/00
CPC分类号： H01L31/18 , B82Y20/00 , G02F1/017
摘要： Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.
摘要翻译：提供了一种光电（OE）发射器集成电路（IC）及其使用选择性生长工艺制造它的方法。在OE发射机IC中，包括双异质结双极晶体管（DHBT）的驱动电路并放大接收的电信号以驱动电吸收（EA）调制器，并且具有多量子阱（MQW）吸收层的EA调制器是在半绝缘基板上集成为单芯片。 EA调制器的MQW吸收层和DHBT的MQW插入层使用选择性MOCVD生长工艺彼此形成为不同的厚度。

4. 发明授权

US07297976B2 Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process 失效
标题翻译：光电发射机集成电路及其制造方法采用选择性生长工艺
公开(公告)号：US07297976B2
公开(公告)日：2007-11-20
申请号：US11282339
申请日：2005-11-18
申请人： Eun Soo Nam , Yong Won Kim , Seon Eui Hong , Myung Sook Oh , Bo Woo Kim
发明人： Eun Soo Nam , Yong Won Kim , Seon Eui Hong , Myung Sook Oh , Bo Woo Kim
IPC分类号： H01L29/06
CPC分类号： H01L31/18 , B82Y20/00 , G02F1/017
摘要： Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.
摘要翻译：提供了一种光电（OE）发射器集成电路（IC）及其使用选择性生长工艺制造它的方法。在OE发射机IC中，包括双异质结双极晶体管（DHBT）的驱动电路并放大接收的电信号以驱动电吸收（EA）调制器，并且具有多量子阱（MQW）吸收层的EA调制器是在半绝缘基板上集成为单芯片。 EA调制器的MQW吸收层和DHBT的MQW插入层使用选择性MOCVD生长工艺彼此形成为不同的厚度。

5. 发明申请

US20090140291A1 PHOTO-DETECTOR FOR DETECTING IMAGE SIGNAL OF INFRARED LASER RADAR AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20090140291A1
公开(公告)日：2009-06-04
申请号：US11635170
申请日：2006-12-07
申请人： Eun Soo Nam , Seon Eui Hong , Myoung Sook Oh , Yong Won Kim , Ho Young Kim , Bo Woo Kim
发明人： Eun Soo Nam , Seon Eui Hong , Myoung Sook Oh , Yong Won Kim , Ho Young Kim , Bo Woo Kim
IPC分类号： H01L31/0304 , H01L21/329
CPC分类号： H01L27/14694 , H01L27/1463 , H01L27/14632 , H01L27/14649 , H01L27/14687
摘要： A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

6. 发明授权

US07541659B1 Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same 有权
标题翻译：用于检测红外激光雷达图像信号的光电检测器及其制造方法
公开(公告)号：US07541659B1
公开(公告)日：2009-06-02
申请号：US11635170
申请日：2006-12-07
申请人： Eun Soo Nam , Seon Eui Hong , Myoung Sook Oh , Yong Won Kim , Ho Young Kim , Bo Woo Kim
发明人： Eun Soo Nam , Seon Eui Hong , Myoung Sook Oh , Yong Won Kim , Ho Young Kim , Bo Woo Kim
IPC分类号： H01L31/06
CPC分类号： H01L27/14694 , H01L27/1463 , H01L27/14632 , H01L27/14649 , H01L27/14687
摘要： A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolated the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.
摘要翻译：一种光电检测器，其中用于连接电极的金属布线布置在平坦化表面上，从而简化了金属布线布置，并提供了其制造方法。光检测器包括形成在化合物半导体衬底上的多层化合物半导体层。多个p-n结二极管以化合物半导体层的选定区域中的规则顺序排列，并且通过在多层化合物半导体层中注入杂质离子来形成用于单独隔离p-n结二极管的隔离区域。隔离区域和化合物半导体层的表面位于同一水平。隔离区域可以是Fe杂质区域。

7. 发明授权

US07855094B2 Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same 失效
标题翻译：用于检测红外激光雷达图像信号的光电检测器及其制造方法
公开(公告)号：US07855094B2
公开(公告)日：2010-12-21
申请号：US12428575
申请日：2009-04-23
申请人： Eun Soo Nam , Seon Eui Hong , Myoung Sook Oh , Yong Won Kim , Ho Young Kim , Bo Woo Kim
发明人： Eun Soo Nam , Seon Eui Hong , Myoung Sook Oh , Yong Won Kim , Ho Young Kim , Bo Woo Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/14694 , H01L27/1463 , H01L27/14632 , H01L27/14649 , H01L27/14687
摘要： A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.
摘要翻译：一种光电检测器，其中用于连接电极的金属布线布置在平坦化表面上，从而简化了金属布线布置，并提供了其制造方法。光检测器包括形成在化合物半导体衬底上的多层化合物半导体层。在化合物半导体层的选定区域中以规则的顺序布置多个p-n结二极管，并且通过在多层化合物半导体层中注入杂质离子来形成用于单独隔离p-n结二极管的隔离区域。隔离区域和化合物半导体层的表面位于同一水平。隔离区域可以是Fe杂质区域。

8. 发明申请

US20090239328A1 PHOTO-DETECTOR FOR DETECTING IMAGE SIGNAL OF INFRARED LASER RADAR AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：用于检测红外激光雷达的图像信号的光电检测器及其制造方法
公开(公告)号：US20090239328A1
公开(公告)日：2009-09-24
申请号：US12428575
申请日：2009-04-23
申请人： Eun Soo Nam , Seon Eui Hong , Myoung Sook Oh , Yong Won Kim , Ho Young Kim , Bo Woo Kim
发明人： Eun Soo Nam , Seon Eui Hong , Myoung Sook Oh , Yong Won Kim , Ho Young Kim , Bo Woo Kim
IPC分类号： H01L21/77 , H01L21/329 , H01L31/0304
CPC分类号： H01L27/14694 , H01L27/1463 , H01L27/14632 , H01L27/14649 , H01L27/14687
摘要： A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.
摘要翻译：一种光电检测器，其中用于连接电极的金属布线布置在平坦化表面上，从而简化了金属布线布置，并提供了其制造方法。光检测器包括形成在化合物半导体衬底上的多层化合物半导体层。在化合物半导体层的选定区域中以规则的顺序布置多个p-n结二极管，并且通过在多层化合物半导体层中注入杂质离子来形成用于单独隔离p-n结二极管的隔离区域。隔离区域和化合物半导体层的表面位于同一水平。隔离区域可以是Fe杂质区域。

9. 发明授权

US07141464B2 Method of fabricating T-type gate 失效
标题翻译：制造T型门的方法
公开(公告)号：US07141464B2
公开(公告)日：2006-11-28
申请号：US11179983
申请日：2005-07-12
申请人： Jong Moon Park , Kun Sik Park , Seong Wook Yoo , Yong Sun Yoon , Sang Gi Kim , Yoon Kyu Bae , Byung Won Lim , Jin Gun Koo , Bo Woo Kim
发明人： Jong Moon Park , Kun Sik Park , Seong Wook Yoo , Yong Sun Yoon , Sang Gi Kim , Yoon Kyu Bae , Byung Won Lim , Jin Gun Koo , Bo Woo Kim
IPC分类号： H01L21/338
CPC分类号： H01L21/28587
摘要： Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible to readily perform a compound semiconductor device manufacturing process, and to reduce manufacturing cost by means of the increase of manufacturing yield and the simplification of manufacturing processes.
摘要翻译：提供一种制造T型栅极的方法，包括以下步骤：分别在衬底上形成预定厚度的第一光致抗蚀剂层，阻挡层和第二光致抗蚀剂层; 在所述第二光致抗蚀剂层和所述阻挡层上形成T型栅极的主体图案; 暴露第二光致抗蚀剂层的预定部分以形成T型栅极的头部图案，并且进行热处理工艺以在除了T型的头部图案之外的第二光致抗蚀剂层的预定区域处产生交联门; 在所得结构的整个表面上进行曝光处理，然后去除所述暴露部分; 在所得结构的整个表面上形成预定厚度的金属层，然后去除第一光致抗蚀剂层，阻挡层，产生交联的第二光致抗蚀剂层的预定区域和金属层，由此可以容易地进行化合物半导体器件制造工艺，并且通过增加制造成品率和简化制造工艺来降低制造成本。

10. 发明授权

US07994553B2 CMOS-based planar type silicon avalanche photo diode using silicon epitaxial layer and method of manufacturing the same 有权
标题翻译：使用硅外延层的CMOS基平面型硅雪崩光电二极管及其制造方法
公开(公告)号：US07994553B2
公开(公告)日：2011-08-09
申请号：US12195166
申请日：2008-08-20
申请人： Yong Sun Yoon , Kun Sik Park , Jong Moon Park , Bo Woo Kim , Jin Yeong Kang
发明人： Yong Sun Yoon , Kun Sik Park , Jong Moon Park , Bo Woo Kim , Jin Yeong Kang
IPC分类号： H01L31/062
CPC分类号： H01L31/107
摘要： A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a substrate; a well layer of a first conductivity type formed in the substrate; an avalanche embedded junction formed in the well layer of the first conductivity type by low energy ion implantation; the silicon epitaxial layer formed in the avalanche embedded junction; a doping area of a second conductivity type opposite to the first conductive type, formed from a portion of a surface of the well layer of the first conductivity type in the avalanche embedded junction and forming a p-n junction; positive and negative electrodes formed on the doping area of the second conductivity type and the well layer of the first conductivity type separated from the doping area of the second conductivity type, respectively; and an oxide layer formed on an overall surface excluding a window where the positive and negative electrodes are formed.
摘要翻译：使用硅外延层的基于互补金属氧化物半导体（CMOS）的平面型雪崩光电二极管（APD）和制造该APD的方法，所述光电二极管包括：衬底; 在衬底中形成的第一导电类型的阱层; 通过低能离子注入形成在第一导电类型的阱层中的雪崩嵌入结; 形成在雪崩嵌入结的硅外延层; 由所述第一导电类型的阱层的表面的一部分形成在所述雪崩嵌入结中并形成p-n结的与所述第一导电类型相反的第二导电类型的掺杂区域; 分别形成在第二导电类型的掺杂区域上的正极和负极以及从第二导电类型的掺杂区域分离的第一导电类型的阱层; 以及形成在除了形成正极和负极的窗口之外的整个表面上的氧化物层。

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