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1. 发明申请

US20100231075A1 LARGE CAPACITY HOLLOW-TYPE FLYWHEEL ENERGY STORAGE DEVICE 有权
标题翻译：大容量中型飞机能源储存装置
公开(公告)号：US20100231075A1
公开(公告)日：2010-09-16
申请号：US12560383
申请日：2009-09-15
申请人： Young Hee HAN , Se Yong Jung , Jeong Phil Lee , Byung Jun Park , Byeong Cheol Park , Nyeon Ho Jeong , Tae Hyun Sung
发明人： Young Hee HAN , Se Yong Jung , Jeong Phil Lee , Byung Jun Park , Byeong Cheol Park , Nyeon Ho Jeong , Tae Hyun Sung
IPC分类号： H02K7/09
CPC分类号： H02K7/025 , H02K7/09 , H02K55/00 , Y02E40/62 , Y02E60/16
摘要： Disclosed is a large capacity hollow-type flywheel energy storage device. The energy storage device includes a hollow shaft, a vacuum chamber receiving the hollow shaft, a flywheel having a predetermined weight and disposed at an inner edge of the vacuum chamber, and a hub connecting the flywheel to the hollow shaft and disposed in the vacuum chamber to be rotatable together with the flywheel. A superconductive bearing and an electromagnet bearing are disposed inside and outside the hollow shaft, respectively, such that magnetic forces thereof can be shielded from each other. Thus, magnetic interference between the superconductive bearing and the electromagnet bearing is shielded by the magnet shield interposed therebetween, thereby preventing rotation loss by stabilizing a structural mechanism during rotation while improving design adaptability.
摘要翻译：公开了一种大容量中空型飞轮储能装置。能量存储装置包括中空轴，容纳中空轴的真空室，具有预定重量并设置在真空室的内边缘处的飞轮，以及将飞轮连接到空心轴并设置在真空室中的轮毂与飞轮一起旋转。超导轴承和电磁体轴承分别设置在中空轴内侧和外侧，使得其磁力能够彼此隔离。因此，超导轴承和电磁铁轴承之间的磁干扰被中间的磁体屏蔽屏蔽，从而通过在旋转期间稳定结构机构来防止旋转损失，同时提高设计适应性。

2. 发明授权

US08134264B2 Large capacity hollow-type flywheel energy storage device 有权
标题翻译：大容量中空型飞轮储能装置
公开(公告)号：US08134264B2
公开(公告)日：2012-03-13
申请号：US12560383
申请日：2009-09-15
申请人： Young Hee Han , Se Yong Jung , Jeong Phil Lee , Byung Jun Park , Byeong Cheol Park , Nyeon Ho Jeong , Tae Hyun Sung
发明人： Young Hee Han , Se Yong Jung , Jeong Phil Lee , Byung Jun Park , Byeong Cheol Park , Nyeon Ho Jeong , Tae Hyun Sung
IPC分类号： H02K7/08
CPC分类号： H02K7/025 , H02K7/09 , H02K55/00 , Y02E40/62 , Y02E60/16
摘要： Disclosed is a large capacity hollow-type flywheel energy storage device. The energy storage device includes a hollow shaft, a vacuum chamber receiving the hollow shaft, a flywheel having a predetermined weight and disposed at an inner edge of the vacuum chamber, and a hub connecting the flywheel to the hollow shaft and disposed in the vacuum chamber to be rotatable together with the flywheel. A superconductive bearing and an electromagnet bearing are disposed inside and outside the hollow shaft, respectively, such that magnetic forces thereof can be shielded from each other. Thus, magnetic interference between the superconductive bearing and the electromagnet bearing is shielded by the magnet shield interposed therebetween, thereby preventing rotation loss by stabilizing a structural mechanism during rotation while improving design adaptability.
摘要翻译：公开了一种大容量中空型飞轮储能装置。能量存储装置包括中空轴，容纳中空轴的真空室，具有预定重量并设置在真空室的内边缘处的飞轮，以及将飞轮连接到空心轴并设置在真空室中的轮毂与飞轮一起旋转。超导轴承和电磁体轴承分别设置在中空轴内侧和外侧，使得其磁力能够彼此隔离。因此，超导轴承和电磁铁轴承之间的磁干扰被中间的磁体屏蔽屏蔽，从而通过在旋转期间稳定结构机构来防止旋转损失，同时提高设计适应性。

3. 发明申请

US20110100156A1 STRESS-REDUCING TYPE ROTOR 审中-公开
标题翻译：减压型转子
公开(公告)号：US20110100156A1
公开(公告)日：2011-05-05
申请号：US12725145
申请日：2010-03-16
申请人： Se Yong Jung , Young Hee Han , Byung Jun Park , Sang Chul Han , Byeong Cheol Park , Jeong Phil Lee
发明人： Se Yong Jung , Young Hee Han , Byung Jun Park , Sang Chul Han , Byeong Cheol Park , Jeong Phil Lee
IPC分类号： F16F15/315
CPC分类号： F16F15/30 , F16F15/315 , Y10T74/2132
摘要： A rotor reducing stress concentration generated by centrifugal force, the rotor having interference fit between a reinforcing ring and the external circumference of a rotor cylinder or rotor cylinder having a hole, wherein the rotor preliminarily rotates at high speed so that the rotor is plastic-deformed in advance, so that less plastic-deformation occurs even when the rotor rotates at high speed compared to the case where plastic deformation is not performed in advance.
摘要翻译：由离心力产生的转子减小应力集中，转子在加强环与具有孔的转子筒或转子缸的外周之间具有过盈配合，其中转子预先高速旋转，使得转子塑性变形即使当转子与预先不进行塑性变形的情况相比高转速时也发生较少的塑性变形。

4. 发明申请

US20090088324A1 Outer rotor superconductor journal bearing 有权
标题翻译：外转子超导体轴颈轴承
公开(公告)号：US20090088324A1
公开(公告)日：2009-04-02
申请号：US11978749
申请日：2007-10-30
申请人： Se Yong Jung , Young Hee Han , Jeong Phil Lee , Tae Hyun Sung , Byung Jun Park
发明人： Se Yong Jung , Young Hee Han , Jeong Phil Lee , Tae Hyun Sung , Byung Jun Park
IPC分类号： H02K7/09
CPC分类号： H02K7/09 , F16C32/0438 , F16C37/005
摘要： An outer rotor superconductor journal bearing that comprising modules and including an outer rotor superconductor journal bearing that cools a superconductor that is mechanically fixed to a module below a critical temperature, attains a strong magnetic fixing force in an axial direction and a radial direction, prevents the superconductor from being damaged due to a different thermal expansion between the superconductor and a cryostat when cooled, and is easier for assembling and repair and maintenance. Preferably, the outer rotor superconductor journal bearing includes a rotor in which a solid of revolution magnet is magnetized in an axis direction in an inner portion of an inner circumference thereof; and a stator comprising a cryostat in the shape of a cylinder in which a superconductor that is tightly adhered to an inner circumference of the rotor is mounted in an outer circumference of the cryostat.
摘要翻译：一种外转子超导体轴颈轴承，其包括模块并且包括将机械地固定到低于临界温度的模块的超导体进行冷却的外转子超导体轴颈轴承，在轴向方向和径向方向上获得强的磁固定力，超导体在冷却时由于超导体和低温恒温器之间的不同热膨胀而被损坏，并且更容易组装和修理和维护。优选地，外转子超导体轴颈轴承包括转子，其中旋转磁体在其内周的内部沿轴向被磁化; 以及定子，其包括气缸形状的低温恒温器，其中紧密附着在转子的内周上的超导体安装在低温恒温器的外周。

5. 发明授权

US07659646B2 Outer rotor superconductor journal bearing 有权
标题翻译：外转子超导体轴颈轴承
公开(公告)号：US07659646B2
公开(公告)日：2010-02-09
申请号：US11978749
申请日：2007-10-30
申请人： Se Yong Jung , Young Hee Han , Jeong Phil Lee , Tae Hyun Sung , Byung Jun Park
发明人： Se Yong Jung , Young Hee Han , Jeong Phil Lee , Tae Hyun Sung , Byung Jun Park
IPC分类号： H02K7/08 , H02K7/09 , H02K9/00
CPC分类号： H02K7/09 , F16C32/0438 , F16C37/005
摘要： An outer rotor superconductor journal bearing that comprising modules and including an outer rotor superconductor journal bearing that cools a superconductor that is mechanically fixed to a module below a critical temperature, attains a strong magnetic fixing force in an axial direction and a radial direction, prevents the superconductor from being damaged due to a different thermal expansion between the superconductor and a cryostat when cooled, and is easier for assembling and repair and maintenance. Preferably, the outer rotor superconductor journal bearing includes a rotor in which a solid of revolution magnet is magnetized in an axis direction in an inner portion of an inner circumference thereof; and a stator comprising a cryostat in the shape of a cylinder in which a superconductor that is tightly adhered to an inner circumference of the rotor is mounted in an outer circumference of the cryostat.
摘要翻译：一种外转子超导体轴颈轴承，其包括模块并且包括将机械地固定到低于临界温度的模块的超导体进行冷却的外转子超导体轴颈轴承，在轴向方向和径向方向上获得强的磁固定力，超导体在冷却时由于超导体和低温恒温器之间的不同热膨胀而被损坏，并且更容易组装和修理和维护。优选地，外转子超导体轴颈轴承包括转子，其中旋转磁体在其内周的内部沿轴向被磁化; 以及定子，其包括气缸形状的低温恒温器，其中紧密附着在转子的内周上的超导体安装在低温恒温器的外周。

6. 发明授权

US08736009B2 Image sensor and method of fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08736009B2
公开(公告)日：2014-05-27
申请号：US13837356
申请日：2013-03-15
申请人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
发明人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
IPC分类号： H01L31/00 , H01L27/146
CPC分类号： H01L31/18 , H01L27/14623 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464
摘要： The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.
摘要翻译：图像传感器包括基板，形成在基板的第一表面上的绝缘结构，并且包括通过穿透基板的接触孔露出的第一金属布线层，形成在接触孔的侧壁上的电连接到第一金属布线层和形成在基板的第二表面上并与第一金属布线层电连接的焊盘。

7. 发明申请

US20100207226A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20100207226A1
公开(公告)日：2010-08-19
申请号：US12705678
申请日：2010-02-15
申请人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
发明人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
IPC分类号： H01L31/14 , H01L31/02 , H01L31/0232
CPC分类号： H01L31/18 , H01L27/14623 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464
摘要： The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.
摘要翻译：图像传感器包括基板，形成在基板的第一表面上的绝缘结构，并且包括通过穿透基板的接触孔露出的第一金属布线层，形成在接触孔的侧壁上的电连接到第一金属布线层和形成在基板的第二表面上并与第一金属布线层电连接的焊盘。

8. 发明授权

US06424046B1 Substrate for manufacturing a semiconductor device with three element alloy 失效
标题翻译：用于制造具有三元素合金的半导体器件的基板
公开(公告)号：US06424046B1
公开(公告)日：2002-07-23
申请号：US09934793
申请日：2001-08-22
申请人： Soon Sung Hong , Ji Yong Lee , Byung Jun Park
发明人： Soon Sung Hong , Ji Yong Lee , Byung Jun Park
IPC分类号： H01L2348
CPC分类号： H05K3/244 , H01L23/142 , H01L23/49582 , H01L23/49866 , H01L24/45 , H01L2224/45144 , H01L2924/00014 , H01L2924/01014 , H01L2924/01028 , H01L2924/10253 , Y10S438/927 , H01L2924/00 , H01L2224/48
摘要： The substrate according to the present invention is comprised of a silver/gold/grain element alloy layer, wherein the alloy forms an outside layer of the product. The grain element is selected from a group consisting of selenium, antimony, bismuth, nickel, cobalt, indium and combination thereof. The present invention has a particular application in forming the outside layer of various items, including a lead frame, a ball grid array, a header, a printed circuit board, a reed switch and a connector.
摘要翻译：根据本发明的基板由银/金/晶粒元素合金层组成，其中合金形成产品的外层。晶粒元素选自硒，锑，铋，镍，钴，铟及其组合。本发明在形成包括引线框架，球栅阵列，集管，印刷电路板，簧片开关和连接器的各种物品的外层中具有特别的应用。

9. 发明授权

US06759704B2 Method for fabricating semiconductor device, and semiconductor device, having storage node contact plugs 有权
标题翻译：制造半导体器件的方法以及具有存储节点接触插头的半导体器件
公开(公告)号：US06759704B2
公开(公告)日：2004-07-06
申请号：US10334783
申请日：2003-01-02
申请人： Byung Jun Park
发明人： Byung Jun Park
IPC分类号： H01L218242
CPC分类号： H01L21/76831 , H01L21/76804 , H01L21/76816 , H01L27/10814 , H01L27/10855
摘要： A method for fabricating a semiconductor device, and a semiconductor device, having storage node contact plugs whereby by a first interlayer dielectric layer (ILD) film having a greater etch rate is formed on a surface of a structure, and then a second ILD film having a smaller etch rate is formed on the first ILD film. After storage node contact holes having narrow width are formed by dry etching the ILD films, the width is increased by wet etching the ILD films. Since the first ILD film has a greater etch rate and is etched faster than the second ILD film, the lower width of each of the storage node contact holes is increased relatively more than the upper width. Insulating layer spacers are then formed on the internal walls of the storage node contact holes, and storage node contact plugs are formed by burying a conductive material therein.
摘要翻译：一种用于制造半导体器件的方法和具有存储节点接触插塞的半导体器件，由此通过在结构的表面上形成具有更大蚀刻速率的第一层间介电层（ILD）膜，然后形成具有在第一ILD膜上形成较小的蚀刻速率。在通过干蚀刻ILD膜形成具有窄宽度的存储节点接触孔之后，通过湿蚀刻ILD膜来增加宽度。由于第一ILD膜具有更大的蚀刻速率并且被蚀刻得比第二ILD膜更快，所以每个存储节点接触孔的较低宽度相对于上部宽度增加。然后在存储节点接触孔的内壁上形成绝缘层间隔物，并且通过在其中埋入导电材料形成存储节点接触插塞。

10. 发明授权

US06670663B2 DRAM cell capacitor and manufacturing method thereof 有权
公开(公告)号：US06670663B2
公开(公告)日：2003-12-30
申请号：US10233535
申请日：2002-09-04
申请人： Yoo-Sang Hwang , Sang-Ho Song , Byung Jun Park , Tae Young Chung
发明人： Yoo-Sang Hwang , Sang-Ho Song , Byung Jun Park , Tae Young Chung
IPC分类号： H01L27108
CPC分类号： H01L27/10852 , H01L21/76895 , H01L27/10897 , H01L28/82 , H01L28/91
摘要： A method for manufacturing a cell capacitor includes a step of forming an upper electrode and a trench for the lower electrode simultaneously in a single mask step. Further steps for manufacturing a cell capacitor includes forming a storage node contact by employing a predefined plate silicon layer and forming a capacitor dielectric using the storage contact node, as a result, it becomes possible to resolve “lift-off” problems, twin-bit failures, and misalignment.

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