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1. 发明授权

US08736009B2 Image sensor and method of fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08736009B2
公开(公告)日：2014-05-27
申请号：US13837356
申请日：2013-03-15
申请人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
发明人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
IPC分类号： H01L31/00 , H01L27/146
CPC分类号： H01L31/18 , H01L27/14623 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464
摘要： The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.
摘要翻译：图像传感器包括基板，形成在基板的第一表面上的绝缘结构，并且包括通过穿透基板的接触孔露出的第一金属布线层，形成在接触孔的侧壁上的电连接到第一金属布线层和形成在基板的第二表面上并与第一金属布线层电连接的焊盘。

2. 发明申请

US20100207226A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20100207226A1
公开(公告)日：2010-08-19
申请号：US12705678
申请日：2010-02-15
申请人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
发明人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
IPC分类号： H01L31/14 , H01L31/02 , H01L31/0232
CPC分类号： H01L31/18 , H01L27/14623 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464
摘要： The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.
摘要翻译：图像传感器包括基板，形成在基板的第一表面上的绝缘结构，并且包括通过穿透基板的接触孔露出的第一金属布线层，形成在接触孔的侧壁上的电连接到第一金属布线层和形成在基板的第二表面上并与第一金属布线层电连接的焊盘。

3. 发明授权

US08426938B2 Image sensor and method of fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08426938B2
公开(公告)日：2013-04-23
申请号：US12705678
申请日：2010-02-15
申请人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
发明人： Byung Jun Park , Yong Woo Lee , Chang Rok Moon
IPC分类号： H01L31/00 , H01L27/146
CPC分类号： H01L31/18 , H01L27/14623 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464
摘要： The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.
摘要翻译：图像传感器包括基板，形成在基板的第一表面上的绝缘结构，并且包括通过穿透基板的接触孔露出的第一金属布线层，形成在接触孔的侧壁上的电连接到第一金属布线层和形成在基板的第二表面上并与第一金属布线层电连接的焊盘。

4. 发明申请

US20090273008A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20090273008A1
公开(公告)日：2009-11-05
申请号：US12504807
申请日：2009-07-17
申请人： Chang Rok Moon
发明人： Chang Rok Moon
IPC分类号： H01L27/148 , H01L31/0216
CPC分类号： H01L21/0214 , G03F7/091 , H01L21/3144 , H01L21/3145 , H01L27/14609 , H01L27/1462 , H01L27/14627 , H01L27/14643 , H01L27/14685 , H01L27/14843
摘要： In a solid state imaging device, and a method of manufacture thereof, the efficiency of the transfer of available photons to the photo-receiving elements is increased beyond that which is currently available. Enhanced anti-reflection layer configurations, and methods of manufacture thereof, are provided that allow for such increased efficiency. They are applicable to contemporary imaging devices, such as charge-coupled devices (CCDs) and CMOS image sensors (CISs). In one embodiment, a photosensitive device is formed in a semiconductor substrate. The photosensitive device includes a photosensitive region. An anti-reflection layer comprising silicon oxynitride is formed on the photosensitive region. The silicon oxynitride layer is heat treated to increase a refractive index of the silicon oxynitride layer, and to thereby decrease reflectivity of incident light at the junction of the photosensitive region.
摘要翻译：在固态成像装置及其制造方法中，将可用光子传递到光接收元件的效率提高到超过当前可用的光子的效率。提供增强的抗反射层结构及其制造方法，其允许这种提高的效率。它们适用于当代成像设备，如电荷耦合器件（CCD）和CMOS图像传感器（CIS）。在一个实施例中，在半导体衬底中形成感光器件。感光装置包括感光区域。在感光区域上形成包含氮氧化硅的抗反射层。氧氮化硅层被热处理以增加氧氮化硅层的折射率，从而降低光敏区域的接合处的入射光的反射率。

5. 发明授权

US08384133B2 Image sensor comprising anti-reflection layer having high refractive index 有权
$Image sensor comprising anti-reflection layer having high refractive index$
标题翻译：图像传感器包括具有高折射率的抗反射层
公开(公告)号：US08384133B2
公开(公告)日：2013-02-26
申请号：US12504807
申请日：2009-07-17
申请人： Chang Rok Moon
发明人： Chang Rok Moon
IPC分类号： H01L29/74
CPC分类号： H01L21/0214 , G03F7/091 , H01L21/3144 , H01L21/3145 , H01L27/14609 , H01L27/1462 , H01L27/14627 , H01L27/14643 , H01L27/14685 , H01L27/14843
摘要： In a solid state imaging device, and a method of manufacture thereof, the efficiency of the transfer of available photons to the photo-receiving elements is increased beyond that which is currently available. Enhanced anti-reflection layer configurations, and methods of manufacture thereof, are provided that allow for such increased efficiency. They are applicable to contemporary imaging devices, such as charge-coupled devices (CCDs) and CMOS image sensors (CISs). In one embodiment, a photosensitive device is formed in a semiconductor substrate. The photosensitive device includes a photosensitive region. An anti-reflection layer comprising silicon oxynitride is formed on the photosensitive region. The silicon oxynitride layer is heat treated to increase a refractive index of the silicon oxynitride layer, and to thereby decrease reflectivity of incident light at the junction of the photosensitive region.
摘要翻译：在固态成像装置及其制造方法中，将可用光子传递到光接收元件的效率提高到超过当前可用的光子的效率。提供增强的抗反射层结构及其制造方法，其允许这种提高的效率。它们适用于当代成像设备，如电荷耦合器件（CCD）和CMOS图像传感器（CIS）。在一个实施例中，在半导体衬底中形成感光器件。感光装置包括感光区域。在感光区域上形成包含氮氧化硅的抗反射层。氧氮化硅层被热处理以增加氧氮化硅层的折射率，从而降低光敏区域的接合处的入射光的反射率。

6. 发明授权

US07572571B2 Image sensor and method for manufacturing the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US07572571B2
公开(公告)日：2009-08-11
申请号：US11043702
申请日：2005-01-26
申请人： Chang Rok Moon
发明人： Chang Rok Moon
IPC分类号： G03F7/00 , H01L31/00
CPC分类号： H01L21/0214 , G03F7/091 , H01L21/3144 , H01L21/3145 , H01L27/14609 , H01L27/1462 , H01L27/14627 , H01L27/14643 , H01L27/14685 , H01L27/14843
摘要： In a solid state imaging device, and a method of manufacture thereof, the efficiency of the transfer of available photons to the photo-receiving elements is increased beyond that which is currently available. Enhanced anti-reflection layer configurations, and methods of manufacture thereof, are provided that allow for such increased efficiency. They are applicable to contemporary imaging devices, such as charge-coupled devices (CCDs) and CMOS image sensors (CISs). In one embodiment, a photosensitive device is formed in a semiconductor substrate. The photosensitive device includes a photosensitive region. An anti-reflection layer comprising silicon oxynitride is formed on the photosensitive region. The silicon oxynitride layer is heat treated to increase a refractive index of the silicon oxynitride layer, and to thereby decrease reflectivity of incident light at the junction of the photosensitive region.
摘要翻译：在固态成像装置及其制造方法中，将可用光子传递到光接收元件的效率增加到超过当前可用的光子的效率。提供增强的抗反射层结构及其制造方法，其允许这种提高的效率。它们适用于当代成像设备，如电荷耦合器件（CCD）和CMOS图像传感器（CIS）。在一个实施例中，在半导体衬底中形成感光器件。感光装置包括感光区域。在感光区域上形成包含氮氧化硅的抗反射层。氧氮化硅层被热处理以增加氧氮化硅层的折射率，从而降低光敏区域的接合处的入射光的反射率。

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