专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5679496A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5679496A
公开(公告)日：1997-10-21
申请号：US566703
申请日：1995-12-04
申请人： Youichi Ohsawa , Satoshi Watanabe , Katsuyuki Oikawa , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Youichi Ohsawa , Satoshi Watanabe , Katsuyuki Oikawa , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
IPC分类号： C07C381/12 , G03F7/004 , H01L21/027 , G03F7/26
CPC分类号： G03F7/0045 , C07C381/12 , Y10S430/106 , Y10S430/111
摘要： A chemically amplified positive resist composition contains a novel trifluoromethanesulfonic or p-toluenesulfonic acid sulfonium salt having at least one tert-butoxycarbonylmethoxy group as an acid labile group. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.
摘要翻译：化学放大正型抗蚀剂组合物含有具有至少一个叔丁氧基羰基甲氧基作为酸不稳定基团的新型三氟甲磺酸或对甲苯磺酸锍盐。该组合物对高能辐射高度敏感，特别是KrF准分子激光器，并且具有高灵敏度，分辨率和等离子体耐蚀刻性，同时产生的抗蚀剂图案是耐热的。

2. 发明授权

US5629134A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5629134A
公开(公告)日：1997-05-13
申请号：US539759
申请日：1995-10-06
申请人： Katsuyuki Oikawa , Toshinobu Ishihara , Fujio Yagihashi , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Katsuyuki Oikawa , Toshinobu Ishihara , Fujio Yagihashi , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
IPC分类号： G03F7/004 , G03F7/039 , G03C1/492 , G03C1/494 , G03C1/76
CPC分类号： G03F7/0045 , Y10S430/106
摘要： In a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, an acid generator, and an optional dissolution inhibitor, a salt of a pyridine which may have an alkyl, alkoxy, amino or dialkylamino group with an alkylsulfonic acid, arylsulfonic acid or halogen atom is blended. Because of high sensitivity to deep UV and resolution and elimination of the PED problem causing T-top pattern configuration and the skirting phenomenon, the resist composition is improved in dimensional precision and lends itself to fine patterning.
摘要翻译：在包含有机溶剂，碱溶性树脂，酸产生剂和任选的溶解抑制剂的化学放大型正性抗蚀剂组合物中，可以具有烷基磺酸的烷基，烷氧基，氨基或二烷基氨基的吡啶盐，芳基磺酸酸或卤素原子混合。由于对深UV和分辨率的高灵敏度以及消除引起T顶部图案构型和裙边现象的PED问题，抗蚀剂组合物的尺寸精度提高，并且适合精细图案化。

3. 发明授权

US5624787A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5624787A
公开(公告)日：1997-04-29
申请号：US466690
申请日：1995-06-06
申请人： Satoshi Watanabe , Katsuyuki Oikawa , Toshinobu Ishihara , Akinobu Tanaka , Tadahito Matsuda , Yoshio Kawai
发明人： Satoshi Watanabe , Katsuyuki Oikawa , Toshinobu Ishihara , Akinobu Tanaka , Tadahito Matsuda , Yoshio Kawai
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： A chemically amplified, positive resist composition contains a trifluoromethanesulfonic or p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salt and a nitrogenous compound. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.
摘要翻译：化学增幅阳性抗蚀剂组合物含有三氟甲磺酸或对甲苯磺酸双或三（对叔丁氧基苯基）锍盐和含氮化合物。该组合物对高能辐射高度敏感，特别是KrF准分子激光器，并且具有高灵敏度，分辨率和等离子体耐蚀刻性，同时产生的抗蚀剂图案是耐热的。

4. 发明申请

US20100316955A1 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：化学放大正电子成像组合物和图案形成过程
公开(公告)号：US20100316955A1
公开(公告)日：2010-12-16
申请号：US12815787
申请日：2010-06-15
申请人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
发明人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
摘要翻译：使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。

5. 发明授权

US5612170A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US5612170A
公开(公告)日：1997-03-18
申请号：US569659
申请日：1995-12-08
申请人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
IPC分类号： G03F7/004 , G03F7/075 , G03C1/73
CPC分类号： G03F7/0045 , G03F7/0755 , G03F7/0757 , Y10S430/115 , Y10S430/122
摘要： A positive resist composition based on a silicone polymer contains a photo acid generator which will decompose to generate an acid upon exposure to radiation. The silicone polymer includes hydroxybenzyl units wherein some OH groups are replaced by t-butoxycarbonyl, t-butoxycarbonylmethyl, trimethylsilyl or tetrahydropyranyl groups. In a first form, the photo acid generator is a specific onium salt having at least one phenyl group with a t-alkoxy, t-butoxycarbonyloxy or t-butoxycarbonylmethoxy substituent. In a second form, the composition further contains a nitrogenous compound. In a third form, the composition further contains a dissolution inhibitor in the form of a specific silicone compound. The composition is sensitive to high energy radiation and has high sensitivity and resolution.
摘要翻译：基于有机硅聚合物的正型抗蚀剂组合物含有光致酸产生剂，其将在暴露于辐射时分解产生酸。有机硅聚合物包括其中一些OH基被叔丁氧基羰基，叔丁氧基羰基甲基，三甲基甲硅烷基或四氢吡喃基代替的羟基苄基单元。在第一种形式中，光酸产生剂是具有至少一个具有叔烷氧基，叔丁氧基羰基氧基或叔丁氧基羰基甲氧基取代基的苯基的特定鎓盐。在第二种形式中，组合物还含有含氮化合物。在第三种形式中，组合物还含有特定硅氧烷化合物形式的溶解抑制剂。该成分对高能辐射敏感，灵敏度高，分辨率高。

6. 发明授权

US08361693B2 Chemically amplified positive photoresist composition and pattern forming process 有权
标题翻译：化学扩增正光致抗蚀剂组合物和图案形成工艺
公开(公告)号：US08361693B2
公开(公告)日：2013-01-29
申请号：US12815787
申请日：2010-06-15
申请人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
发明人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
摘要翻译：使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。

7. 发明授权

US5457003A Negative working resist material, method for the production of the same and process of forming resist patterns using the same 失效
标题翻译：负性抗蚀剂材料，其制造方法以及使用其形成抗蚀剂图案的工艺
公开(公告)号：US5457003A
公开(公告)日：1995-10-10
申请号：US99398
申请日：1993-07-30
申请人： Akinobu Tanaka , Hiroshi Ban , Jiro Nakamura , Takao Kimura , Yoshio Kawai
发明人： Akinobu Tanaka , Hiroshi Ban , Jiro Nakamura , Takao Kimura , Yoshio Kawai
IPC分类号： G03F7/075
CPC分类号： G03F7/0757 , Y10S430/122 , Y10S430/123
摘要： A resist material comprises a polysiloxane obtained by hydrolysis and condensation with dehydration of one or more alkoxysilanes having an oxirane ring, or of a mixture of the alkoxysilane(s) having an oxirane ring and one or more alkoxysilanes having no oxirane ring, and an acid generator. The resist material may contain one or more of a spectral sensitizer, an organic polymer having a hydroxyl group or an epoxy compound. Resist patterns are formed by coating an organic polymer on a substrate and then the resist material on the film of the organic polymer to form a two layer resist having a bottom layer of the organic polymer and top layer of the resist material, prebaking, imagewise exposing high radiation, postbaking, and developing the resist with alkaline solutions to remove an unexposed portion of the top layer, and dry etching the bottom layer using the relic of the resist material as a mask. the temperature of the post baking is preferably lower than that of the prebaking.
摘要翻译：抗蚀剂材料包括通过水解和缩合得到的聚硅氧烷，所述聚硅氧烷通过脱水一个或多个具有环氧乙烷环的烷氧基硅烷，或具有环氧乙烷环的烷氧基硅烷和一个或多个不具有环氧乙烷环的烷氧基硅烷的混合物和酸发电机。抗蚀剂材料可以含有一种或多种光谱增感剂，具有羟基的有机聚合物或环氧化合物。通过在有机聚合物的膜上涂覆有机聚合物，然后在有机聚合物的膜上涂覆抗蚀剂材料形成具有有机聚合物的底层和抗蚀剂材料的顶层的双层抗蚀剂，预烘烤，成像曝光高辐射，后烘烤，并用碱性溶液显影抗蚀剂以除去顶层的未曝光部分，并使用抗蚀剂材料的遗物作为掩模干蚀刻底层。后烘烤的温度优选低于预烘烤的温度。

8. 发明授权

US5856561A Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions 失效
标题翻译：双酚羧酸叔酯衍生物和化学放大正型抗蚀剂组合物
公开(公告)号：US5856561A
公开(公告)日：1999-01-05
申请号：US710298
申请日：1996-09-17
申请人： Takesi Nagata , Satoshi Watanabe , Katsuya Takemura , Tsunehiro Nishi , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Takesi Nagata , Satoshi Watanabe , Katsuya Takemura , Tsunehiro Nishi , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： G03F7/004 , C07C69/734 , C08F12/00 , C08F12/22 , C08K5/10 , C08K5/107 , C08L25/00 , C08L25/08 , C08L25/18 , G03F7/039 , H01L21/027 , C07C69/76
CPC分类号： C07C69/734
摘要： Novel bisphenol carboxylic acid tertiary ester derivatives having two aromatic ether groups and an ester group which are all replaced by acid labile groups are provided. The derivatives are used as a dissolution inhibitor in a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, and a photo-acid generator. Since the dissolution inhibitor has a highly reactive acetal group as an acid labile group, its coupling-off rapidly takes place after exposure. The dissolution inhibitor itself is less alkali soluble and its acid decomposition product is a phenol derivative having a carboxylic acid group with high alkali solubility, leading to a high dissolution contrast.
摘要翻译：提供了具有两个芳族醚基团和酯基的新的双酚羧酸叔酯衍生物，它们均被酸不稳定基团所取代。该衍生物在包含有机溶剂，碱溶性树脂和光酸发生剂的化学放大型正性抗蚀剂组合物中用作溶解抑制剂。由于溶解抑制剂具有作为酸不稳定基团的高反应性缩醛基团，因此其暴露后快速发生偶联。溶解抑制剂本身的碱溶性较小，其酸分解产物是具有高碱溶性的羧酸基的苯酚衍生物，导致高的溶解对比度。

9. 发明授权

US5824824A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5824824A
公开(公告)日：1998-10-20
申请号：US742323
申请日：1996-11-01
申请人： Yoichi Osawa , Satoshi Watanabe , Kaysuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Yoichi Osawa , Satoshi Watanabe , Kaysuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： C07C381/12 , G03F7/004 , C07C319/00
CPC分类号： G03F7/0045 , C07C381/12 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a C.sub.2 -C.sub.20 alkylsulfonate or arylsulfonate anion whose alkyl or aryl has as a substituent an electron withdrawing group such as fluorine and nitro group. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates a substituted alkyl or arylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了一种新的锍盐，其具有至少一个与分子中的苯基连接的酸不稳定基团，和其烷基或芳基具有诸如氟和硝基的吸电子基团的取代基的C 2 -C 20烷基磺酸盐或芳基磺酸根阴离子。新型锍盐对于增加曝光和未曝光区域之间的溶解度对比是有效的。暴露后，产生弱酸的取代烷基或芳基磺酸，使PEB步骤中副反应和失活的影响最小化。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

10. 发明授权

US5880169A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5880169A
公开(公告)日：1999-03-09
申请号：US742324
申请日：1996-11-01
申请人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： G03F7/004 , G03F7/039 , G03F7/038
CPC分类号： G03F7/0045
摘要： The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a normal, branched or cyclic C.sub.1 -C.sub.20 alkylsulfonate anion. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates an alkylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了一种新的锍盐，其具有至少一个与分子中的苯基连接的酸不稳定基团以及正，支链或环状的C 1 -C 20烷基磺酸根阴离子。新型锍盐对于增加曝光和未曝光区域之间的溶解度对比是有效的。暴露后，产生弱酸的烷基磺酸，使PEB步骤中副反应和失活的影响最小化。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式